VISHAY CQX48

CQX48
Vishay Telefunken
GaAs Infrared Emitting Diode in Side View Package
Description
CQX48 is a standard GaAs infrared emitting diode in
a flat sideview plastic package.
A small recessed spherical lens provides an improved
radiant intensity in a low profile case.
The diode is case compatible to the BPW78 phototransistor, allowing the user to assemble his own
optical interrupters.
Features
D Side view case with spherical lens
D Radiation direction perpendicular to mounting
direction
D
D
D
D
94 8743
Angle of half intensity ϕ = ± 25°
Peak wavelength lp = 950 nm
High reliability
Case compatible with BPW78
Applications
Radiation source in near infrared range
Absolute Maximum Ratings
Tamb = 25_C
Parameter
Reverse Voltage
Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Document Number 81000
Rev. 5, 16-Nov-99
Test Conditions
tp
t
x 100 ms
x5s
Symbol
VR
IF
IFSM
PV
Tj
Tamb
Tstg
Tsd
RthJA
Value
6
100
2
170
100
–40...+100
–40...+100
260
450
Unit
V
mA
A
mW
°C
°C
°C
°C
K/W
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CQX48
Vishay Telefunken
Basic Characteristics
Tamb = 25_C
Parameter
Forward Voltage
Breakdown Voltage
Junction Capacitance
Radiant Power
Temp. Coefficient of fe
Angle of Half Intensity
Peak Wavelength
Spectral Bandwidth
Rise time
Test Conditions
IF = 100 mA, tp
20 ms
IR = 100 mA
VR = 0 V, f = 1 MHz, E = 0
IF = 50 mA, tp
20 ms
IF = 50 mA
x
x
Symbol
VF
V(BR)
Cj
Typ
1.3
tr
50
10
–0.8
±25
950
50
400
Unit
V
V
pF
mW
%/K
deg
nm
nm
ns
tf
450
ns
TKfe
ϕ
lp
Dl
x
x
Max
1.7
6
fe
IF = 50 mA
IF = 50 mA
IF = 1 A, tp/T = 0.01,
tp 10 ms
IF = 1 A, tp/T = 0.01,
tp 10 ms
Fall Time
Min
Type Dedicated Characteristics
Tamb = 25_C
Parameter
Radiant Intensity
Test Conditions
IF=50 mA,
tp 20ms
Type
CQX 48 B
x
Symbol
Ie
Min
2
Typ
Max
Unit
mW/sr
Typical Characteristics (Tamb = 25_C unless otherwise specified)
125
IF – Forward Current ( mA )
PV – Power Dissipation ( mW )
250
200
150
RthJA
100
50
100
75
RthJA
50
25
0
0
0
94 8029 e
20
40
60
80
100
Tamb – Ambient Temperature ( °C )
Figure 1. Power Dissipation vs. Ambient Temperature
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0
94 7916 e
20
40
60
80
100
Tamb – Ambient Temperature ( °C )
Figure 2. Forward Current vs. Ambient Temperature
Document Number 81000
Rev. 5, 16-Nov-99
CQX48
Vishay Telefunken
104
Fe – Radiant Power ( mW )
IF – Forward Current ( mA )
100.0
103
102
101
100
1.0
0.1
10–1
0
1
2
4
3
VF – Forward Voltage ( V )
94 7996 e
1
100
1000
Figure 6. Radiant Power vs. Forward Current
1.2
1.6
1.1
1.2
I e rel ; Fe rel
IF = 10 mA
1.0
IF = 20 mA
0.8
0.9
0.4
0.8
0.7
0
20
40
60
80
0
–10 0 10
100
Tamb – Ambient Temperature ( °C )
94 7990 e
50
100
140
Tamb – Ambient Temperature ( °C )
94 7993 e
Figure 4. Relative Forward Voltage vs.
Ambient Temperature
Figure 7. Rel. Radiant Intensity\Power vs.
Ambient Temperature
100.0
1.25
Fe rel – Relative Radiant Power
I e – Radiant Intensity ( mW/sr )
10
IF – Forward Current ( mA )
13718
Figure 3. Forward Current vs. Forward Voltage
V Frel – Relative Forward Voltage
10.0
10.0
1.0
1.0
0.75
0.5
0.25
IF = 100 mA
0.1
1
13717
10
100
1000
10000
IF – Forward Current ( mA )
Figure 5. Radiant Intensity vs. Forward Current
Document Number 81000
Rev. 5, 16-Nov-99
0
900
94 7994 e
950
1000
l – Wavelength ( nm )
Figure 8. Relative Radiant Power vs. Wavelength
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CQX48
Vishay Telefunken
I e rel – Relative Radiant Intensity
0°
10
°
20
°
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
0.6
0.4
0.2
0
0.2
0.4
0.6
94 7915 e
Figure 9. Relative Radiant Intensity vs.
Angular Displacement
Dimensions in mm
96 12194
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Document Number 81000
Rev. 5, 16-Nov-99
CQX48
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 81000
Rev. 5, 16-Nov-99
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