BTS555 E3146 Data Sheet (290 KB, EN)

PROFET® Data Sheet BTS555
Smart Highside High Current Power Switch
Product Summary
Overvoltage protection
Output clamp
Operating voltage
On-state resistance
Load current (ISO)
Short circuit current limitation
Current sense ratio
Reversave
• Reverse battery protection by self turn on of
power MOSFET
Features
• Overload protection
• Current limitation
• Short circuit protection
• Overtemperature protection
• Overvoltage protection (including load dump)
• Clamp of negative voltage at output
• Fast deenergizing of inductive loads 1)
• Low ohmic inverse current operation
• Diagnostic feedback with load current sense
• Open load detection via current sense
• Loss of Vbb protection2)
• Electrostatic discharge (ESD) protection
• Green Product (RoHS compliant)
• AEC qualified
Vbb(AZ)
62
VON(CL)
44
Vbb(on) 5.0 ... 34
RON
IL(ISO)
IL(SCp)
IL : IIS
V
V
V
2.5 mΩ
165
A
520
A
30 000
PG-TO218-5-146
5
1
Straight leads
Application
• Power switch with current sense diagnostic feedback for 12 V and 24 V DC grounded loads
• Most suitable for loads with high inrush current like lamps and motors; all types of resistive and inductive loads
• Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions.
3 & Tab
R
Voltage
source
Voltage
sensor
Overvoltage
Current
Gate
protection
limit
protection
Charge pump
Level shifter
Rectifier
2
IN
Logic
ESD
I IN
Limit for
unclamped
ind. loads
Output
Voltage
detection
+ V bb
bb
OUT
1, 5
IL
Current
Sense
Load
Temperature
sensor
IS

PROFET
I IS
Load GND
4
VIN
V IS
R
IS
Logic GND
1
2)
)
With additional external diode.
Additional external diode required for energized inductive loads (see page 9).
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Data Sheet BTS555
Pin
Symbol
1
OUT
2
IN
3
Vbb
4
IS
5
OUT
Function
Output to the load. The pins 1 and 5 must be shorted with each other
especially in high current applications!3)
Input, activates the power switch in case of short to ground
Positive power supply voltage, the tab is electrically connected to this pin.
In high current applications the tab should be used for the Vbb connection
instead of this pin4).
Diagnostic feedback providing a sense current proportional to the load
current; zero current on failure (see Truth Table on page 7)
Output to the load. The pins 1 and 5 must be shorted with each other
especially in high current applications!3)
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Supply voltage (see page 4 and 5)
Supply voltage for full short circuit protection,
(EAS limitation see diagram on page 10) Tj,start=-40°C…+150°C:
Load current (short circuit current, see page 5)
Load dump protection VLoadDump = UA + Vs, UA = 13.5 V
RI5) = 2 Ω, RL = 0.1 Ω, td = 200 ms,
IN, IS = open or grounded
Operating temperature range
Storage temperature range
Power dissipation (DC), TC ≤ 25 °C
Inductive load switch-off energy dissipation, single pulse
Vbb = 12V, Tj,start = 150°C, TC = 150°C const.,
IL = 20 A, ZL = 15 mH, 0 Ω, see diagram on page 10
Electrostatic discharge capability (ESD)
Symbol
Vbb
Vbb
Values
40
34
Unit
V
V
self-limited
A
80
V
Tj
Tstg
Ptot
-40 ...+150
-55 ...+150
360
°C
EAS
3
J
4.0
kV
+15 , -250
+15 , -250
mA
IL
VLoad dump6)
VESD
W
Human Body Model acc. MIL-STD883D, method 3015.7 and ESD
assn. std. S5.1-1993, C = 100 pF, R = 1.5 kΩ
Current through input pin (DC)
Current through current sense status pin (DC)
IIN
IIS
see internal circuit diagrams on page 8 and 9
3)
4)
5)
6)
Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability
and decrease the current sense accuracy
Otherwise add up to 0.5 mΩ (depending on used length of the pin) to the RON if the pin is used instead of the
tab.
RI = internal resistance of the load dump test pulse generator.
VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839.
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Data Sheet BTS555
Thermal Characteristics
Parameter and Conditions
Thermal resistance
Symbol
chip - case: RthJC7)
junction - ambient (free air): RthJA
min
---
Values
typ
max
-- 0.35
30
--
Unit
K/W
Electrical Characteristics
Parameter and Conditions
Symbol
at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified
Load Switching Capabilities and Characteristics
On-state resistance (Tab to pins 1,5, see measurement
circuit page 7)
IL = 30 A, Tj = 25 °C: RON
VIN = 0, IL = 30 A, Tj = 150 °C:
IL = 120 A, Tj = 150 °C:
Vbb = 6
IL = 20 A, Tj = 150 °C: RON(Static)
Nominal load current9) (Tab to pins 1,5)
IL(ISO)
ISO 10483-1/6.7: VON = 0.5 V, Tc = 85 °C 10)
Maximum load current in resistive range
(Tab to pins 1,5)
VON = 1.8 V, Tc = 25 °C: IL(Max)
see diagram on page 13
VON = 1.8 V, Tc = 150 °C:
11
)
Turn-on time
IIN
to 90% VOUT: ton
Turn-off time
IIN
to 10% VOUT: toff
RL = 1 Ω , Tj =-40...+150°C
dV/dton
Slew rate on 11) (10 to 30% VOUT )
RL = 1 Ω
-dV/dtoff
Slew rate off 11) (70 to 40% VOUT )
RL = 1 Ω
V8),
Values
min
typ
max
Unit
----128
1.9
3.3
-4.6
165
2.5
4.0
4.0
9.0
--
mΩ
520
360
120
50
-----
--600
200
0.3
0.5
0.8
V/µs
0.3
0.7
1
V/µs
A
A
µs
7)
Thermal resistance RthCH case to heatsink (about 0.25 K/W with silicone paste) not included!
Decrease of Vbb below 10 V causes slowly a dynamic increase of RON to a higher value of RON(Static). As
long as VbIN > VbIN(u) max, RON increase is less than 10 % per second for TJ < 85 °C.
9) not subject to production test, specified by design
10) T is about 105°C under these conditions.
J
11) See timing diagram on page 14.
8)
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Data Sheet BTS555
Parameter and Conditions
Symbol
at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified
Inverse Load Current Operation
On-state resistance (Pins 1,5 to pin 3)
VbIN = 12 V, IL = - 30 A
Values
min
typ
max
2.5
4.0
--
mΩ
128
1.9
3.3
165
--
0.6
0.7
V
Vbb(on)
VbIN(u)
5.0
1.5
-3.0
34
4.5
V
V
VbIN(ucp)
VbIN(Z)
3.0
60
62
---
4.5
-66
15
25
6.0
--25
50
V
V
Tj = 25 °C: RON(inv)
see description on page 10
Tj = 150 °C:
IL(inv)
Nominal inverse load current (Pins 1,5 to Tab)
10
VON = -0.5 V, Tc = 85 °C
-VON
Drain-source diode voltage (Vout > Vbb)
IL = - 20 A, IIN = 0, Tj = +150°C
--
Unit
A
Operating Parameters
Operating voltage (VIN = 0) 12)
Undervoltage shutdown 13)
Undervoltage start of charge pump
see diagram page 15
Overvoltage protection14)
Tj =-40°C:
Ibb = 15 mA
Tj = 25...+150°C:
Standby current
Tj =-40...+25°C:
IIN = 0
Tj = 150°C:
Ibb(off)
µA
12)
If the device is turned on before a Vbb-decrease, the operating voltage range is extended down to VbIN(u).
For all voltages 0 ... 34 V the device provides embedded protection functions against overtemperature and
short circuit.
13) V
bIN = Vbb - VIN see diagram on page 7. When VbIN increases from less than VbIN(u) up to VbIN(ucp) = 5 V
(typ.) the charge pump is not active and VOUT ≈Vbb - 3 V.
14) See also VON(CL) in circuit diagram on page 8.
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Data Sheet BTS555
Parameter and Conditions
Symbol
at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified
Protection Functions15)
Short circuit current limit (Tab to pins 1,5)16)
VON = 12 V, time until shutdown max. 300 µs Tc =-40°C: IL(SCp)
Tc =25°C:
Tc =+150°C:
Short circuit shutdown delay after input current
positive slope, VON > VON(SC)
td(SC)
min. value valid only if input "off-signal" time exceeds 30 µs
Output clamp 17)
IL= 40 mA: -VOUT(CL)
(inductive load switch off)
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL) (e.g. overvoltage)
VON(CL)
IL= 40 mA
Short circuit shutdown detection voltage
(pin 3 to pins 1,5)
VON(SC)
Thermal overload trip temperature
Tjt
Thermal hysteresis
∆Tjt
Reverse Battery
Reverse battery voltage 18)
-Vbb
On-state resistance (Pins 1,5 to pin 3)
Tj = 25 °C: RON(rev)
Vbb = -12V, VIN = 0, IL = - 30 A, RIS = 1 kΩ Tj = 150 °C:
Integrated resistor in Vbb line
Tj = 25 °C:
Tj = 150 °C:
Rbb
Values
min
typ
max
Unit
200
200
300
320
400
480
550
620
650
A
80
--
300
µs
14
17
20
V
40
44
47
V
-150
--
6
-10
----
V
°C
K
--
--
16
V
--
2.3
3.9
3.0
4.7
mΩ
90
110
135
Ω
105
125
150
15)
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not
designed for continuous repetitive operation.
16 ) Short circuit is a failure mode. The device is not designed to operate continuously into a short circuit by
permanent resetting the short circuit latch function. The lifetime will be reduced under such conditions.
17) This output clamp can be "switched off" by using an additional diode at the IS-Pin (see page 8). If the diode
is used, VOUT is clamped to Vbb- VON(CL) at inductive load switch off.
18) The reverse load current through the intrinsic drain-source diode has to be limited by the connected load (as
it is done with all polarity symmetric loads). Note that under off-conditions (IIN = IIS = 0) the power transistor
is not activated. This results in raised power dissipation due to the higher voltage drop across the intrinsic
drain-source diode. The temperature protection is not active during reverse current operation! Increasing
reverse battery voltage capability is simply possible as described on page 9.
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Data Sheet BTS555
Parameter and Conditions
Symbol
at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified
Diagnostic Characteristics
Current sense ratio,
IL = 120 A,Tj =-40°C: kILIS
static on-condition,
Tj =25°C:
kILIS = IL : IIS,
Tj =150°C:
VON < 1.5 V19),
IL = 30 A,Tj =-40°C:
VIS <VOUT - 5 v,
Tj =25°C:
VbIN > 4.0 V
Tj =150°C:
(see diagram on page 12)
IL = 16 A,Tj =-40°C:
Tj =25°C:
Tj =150°C:
IL = 12 A,Tj =-40°C:
Tj =25°C:
Tj =150°C:
Values
min
typ
max
Unit
25 000
26 000
24 000
25 000
25 000
23 000
24 000
24 000
23 000
23 000
23 000
23 000
29 000
28 500
26 500
31 200
30 200
27 200
33 500
31 500
27 500
40 500
40 500
29 000
34 000
32 000
29 000
40 000
35 000
31 500
48 000
40 000
32 000
61 000
45 000
34 000
IIS,lim
6.5
--
--
mA
IIN = 0, VIS = 0: IIS(LL)
--
--
0.5
µA
VIN = 0, VIS = 0, IL ≤ 0: IIS(LH)
--
2
--
-60
62
--66
500
---
µs
V
--
0.8
1.5
mA
--
--
40
µA
IIS=0 by IIN =0 (e.g. during deenergizing of inductive loads):
Sense current saturation
Current sense leakage current
Current sense settling
time20)
Overvoltage protection
Ibb = 15 mA
ts(IS)
Tj =-40°C: VbIS(Z)
Tj = 25...+150°C:
Input
Input and operating current (see diagram page 13) IIN(on)
IN grounded (VIN = 0)
Input current for turn-off21)
IIN(off)
19)
If VON is higher, the sense current is no longer proportional to the load current due to sense current
saturation, see IIS,lim .
20) not subject to production test, specified by design
21) We recommend the resistance between IN and GND to be less than 0.5 kΩ for turn-on and more than
500kΩ for turn-off. Consider that when the device is switched off (IIN = 0) the voltage between IN and GND
reaches almost Vbb.
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Data Sheet BTS555
Truth Table
Remark
Input
current
Output
Current
Sense
level
level
L
H
L
H
IIS
0
nominal
H
H
IIS, lim
H
H
0
L
H
L
H
L
H
L
H
L
L
L
L
L
H
H
Z23)
H
L
0
0
0
0
0
<nominal 22)
0
0
0
L
H
H
H
0
0
Normal
operation
Very high
load current
Currentlimitation
Short circuit to
GND
Overtemperature
Short circuit to
Vbb
Open load
Negative output
voltage clamp
Inverse load
current
=IL / kilis, up to IIS=IIS,lim
up to VON=VON(Fold back)
IIS no longer proportional to IL
VON > VON(Fold back)
if VON>VON(SC), shutdown will occure
L = "Low" Level
H = "High" Level
Overtemperature reset via input: IIN=low and Tj < Tjt (see diagram on page 15)
Short circuit to GND: Shutdown remains latched until next reset via input (see diagram on page 14)
Terms
RON measurement layout (straight leads)
I bb
3
VbIN
≤ 5.5 mm
VON
Vbb
IL
V
2
bb
IN
RIN
V
IN
I IN
OUT
PROFET
1,5
IS
VbIS
4
DS
VIS
Vbb force contacts
I IS
V OUT
Out Force Sense
contacts
contacts
(both out
pins parallel)
R IS
Two or more devices can easily be connected in
parallel to increase load current capability.
22)
23)
Low ohmic short to Vbb may reduce the output current IL and can thus be detected via the sense current IIS.
Power Transistor "OFF", potential defined by external impedance.
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Data Sheet BTS555
Input circuit (ESD protection)
Short circuit detection
Fault Condition: VON > VON(SC) (6 V typ.) and t> td(SC)
(80 ...300 µs).
V bb
+ Vbb
R bb
ZD
V
Z,IN
V bIN
VON
IN
I
IN
OUT
Short circuit
detection
Logic
unit
V IN
Inductive and overvoltage output clamp
When the device is switched off (IIN = 0) the voltage
between IN and GND reaches almost Vbb. Use a
mechanical switch, a bipolar or MOS transistor with
appropriate breakdown voltage as driver.
VZ,IN = 66 V (typ).
+ Vbb
VZ1
VON
Current sense status output
Vbb
VZG
OUT
PROFET
R bb
V
ZD
DS
Z,IS
IS
VOUT
IS
IIS
R
VIS
IS
VZ,IS = 66 V (typ.), RIS = 1 kΩ nominal (or 1 kΩ /n, if n
devices are connected in parallel). IS = IL/kilis can be
only driven by the internal circuit as long as Vout - VIS >
5V. If you want to measure load currents up to IL(M),
RIS should be less than V bb − 5V .
I L ( M ) / K ilis
Note: For large values of RIS the voltage VIS can reach
almost Vbb. See also overvoltage protection.
If you don't use the current sense output in your
application, you can leave it open.
VON is clamped to VON(Cl) = 42 V typ. At inductive load
switch-off without DS, VOUT is clamped to VOUT(CL) =
-17 V typ. via VZG. With DS, VOUT is clamped to Vbb VON(CL) via VZ1. Using DS gives faster deenergizing of
the inductive load, but higher peak power dissipation in
the PROFET. In case of a floating ground with a
potential higher than 19V referring to the OUT –
potential the device will switch on, if diode DS is not
used.
Overvoltage protection of logic part
+ Vbb
V
R IN
Z,IN
IN
V
R bb
Z,IS
Logic
PROFET
IS
R IS
V OUT
RV
V Z,VIS
Signal GND
Rbb = 120 Ω typ., VZ,IN = VZ,IS = 66 V typ., RIS = 1 kΩ
nominal. Note that when overvoltage exceeds 71 V typ.
a voltage above 5V can occur between IS and GND, if
RV, VZ,VIS are not used.
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Data Sheet BTS555
Version b:
Reverse battery protection
- Vbb
R bb
V
IN
IN
OUT
R IN
Power
Transistor
Logic
D
R IS
PROFET
OUT
IS
IS
DS
Vbb
bb
V Zb
RL
RV
Signal GND
Note that there is no reverse battery protection when
using a diode without additional Z-diode VZL, VZb.
Power GND
Version c: Sometimes a neccessary voltage clamp is
RV ≥ 1 kΩ, RIS = 1 kΩ nominal. Add RIN for reverse
given by non inductive loads RL connected to the same
battery protection in applications with Vbb above
switch
and eliminates the need of clamping circuit:
1
1
1
+
+
=
16 V18); recommended value:
RIN RIS RV
0.1A
1
0.1A
if DS is not used (or
=
if DS is
|Vbb| - 12V
RIN |Vbb| - 12V
V
Vbb
bb
used).
RL
To minimize power dissipation at reverse battery
OUT
IN
PROFET
operation, the summarized current into the IN and IS
pin should be about 120mA. The current can be
provided by using a small signal diode D in parallel to
IS
the input switch, by using a MOSFET input switch or by
proper adjusting the current through RIS and RV.
Vbb disconnect with energized inductive
load
Provide a current path with load current capability by
using a diode, a Z-diode, or a varistor. (VZL < 72 V or
VZb < 30 V if RIN=0). For higher clamp voltages
currents at IN and IS have to be limited to 250 mA.
Version a:
V
bb
V
IN
bb
PROFET
OUT
IS
V ZL
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Data Sheet BTS555
Inverse load current operation
Maximum allowable load inductance for
a single switch off
L = f (IL ); Tj,start = 150°C, Vbb = 12 V, RL = 0 Ω
Vbb
V bb
1000000
- IL
IN
+
PROFET
OUT
100000
V OUT +
IS
-
IIS
V IN
V IS
-
R IS
10000
1000
The device is specified for inverse load current
operation (VOUT > Vbb > 0V). The current sense feature
is not available during this kind of operation (IIS = 0).
With IIN = 0 (e.g. input open) only the intrinsic drain
source diode is conducting resulting in considerably
increased power dissipation. If the device is switched
on (VIN = 0), this power dissipation is decreased to the
much lower value RON(INV) * I2 (specifications see page
4).
Note: Temperature protection during inverse load
current operation is not possible!
100
10
1
1
10
100
1000
L [µH]
IL [A]
Inductive load switch-off energy
dissipation
E bb
Externally adjustable current limit
E AS
V
ELoad
bb
i L(t)
V bb
IN
PROFET
OUT
IS
I
IN
ZL
RIS
L
{
RL
EL
ER
If the device is conducting, the sense current can be
used to reduce the short circuit current and allow
higher lead inductance (see diagram above). The
device will be turned off, if the threshold voltage of T2
is reached by IS*RIS . After a delay time defined by
RV*CV T1 will be reset. The device is turned on again,
the short circuit current is defined by IL(SC) and the
device is shut down after td(SC) with latch function.
Vbb
Energy stored in load inductance:
V bb
2
EL = 1/2·L·I L
IN
While demagnetizing load inductance, the energy
dissipated in PROFET is
Rload
IN
Signal
with an approximate solution for RL > 0 Ω:
Infineon Technologies AG
ln (1+ |V
IL·RL
OUT(CL)|
OUT
IS
RV
EAS= Ebb + EL - ER= ∫ VON(CL)·iL(t) dt,
IL· L
EAS=
(V + |VOUT(CL)|)
2·RL bb
PROFET
T1
Signal
GND
)
10
CV
T2
R IS
Power
GND
2010-June-01
Data Sheet BTS555
Options Overview
Type
BTS
Overtemperature protection with hysteresis
Tj >150 °C, latch function24)
Tj >150 °C, with auto-restart on cooling
Short circuit to GND protection
555
X
X
with overtemperature shutdown
switches off when VON>6 V typ.
(when first turned on after approx. 180 µs)
X
Overvoltage shutdown
-
Output negative voltage transient limit
to Vbb - VON(CL)
to VOUT = -15 V typ
X
X25)
24)
Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT ≠
0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 5). No latch
between turn on and td(SC).
25) Can be "switched off" by using a diode D (see page 8) or leaving open the current sense output.
S
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Data Sheet BTS555
Characteristics
Current sense versus load current:
IIS = f(IL)
IIS [mA]
Current sense ratio:
KILIS = f(IL), TJ = 25 °C
kilis
65000
7
60000
6
55000
5
max
50000
4
45000
40000
3
min
max
35000
2
typ
30000
1
25000
min
0
20000
0
50
100
150
0
50
100
150
IL [A]
IL [A]
Current sense ratio:
KILIS = f(IL), TJ = -40 °C
kilis
Current sense ratio:
KILIS = f(IL), TJ = 150 °C
kilis
65000
65000
60000
60000
55000
55000
50000
50000
45000
45000
40000
40000
max
35000
35000
typ
max
30000
30000
25000
typ
25000
min
min
20000
20000
0
50
100
150
0
IL [A]
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50
100
150
IL [A]
2010-June-01
Data Sheet BTS555
Typ. current limitation characteristic
IL = f (VON, Tj)
Typ. input current
IIN = f (VbIN), VbIN = Vbb - VIN
IIN [mA]
IL [A]
1000
1.6
900
1.4
800
1.2
700
VON >VON(SC) only for t < t d(SC)
600
(otherwise immediate shutdown)
1.0
0.8
500
Tj = -40°C
400
25°C
0.6
150°C
0.4
85°C
300
200
0.2
100
0
0
0 VON(FB)
10
15
20
VON [V]
0
20
40
60
80
VbIN [V]
In case of VON > VON(SC) (typ. 6 V) the device will be
switched off by internal short circuit detection.
Typ. on-state resistance
RON = f (Vbb, Tj); IL = 30 A; VIN = 0
RON [mOhm]
6
static
5
dynamic
4
Tj = 150°C
85°C
3
25°C
2
-40°C
1
0
0
5
10
15
40
20
Vbb [V]
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2010-June-01
Data Sheet BTS555
Timing diagrams
Figure 1: Switching a resistive load,
change of load current in on-condition:
Figure 2b: Switching an inductive load:
IIN
IIN
VOUT
90%
dV/dtoff
VOUT
t on
dV/dton
t off
10%
IL
tslc(IS)
Load 1
IIS
t slc(IS)
IL
Load 2
IIS
tson(IS)
t
t
t soff(IS)
The sense signal is not valid during a settling time
after turn-on/off and after change of load current.
Figure 3: Short circuit:
shut down by short circuit detection, reset by IIN = 0.
Figure 2a: Switching motors and lamps:
IIN
IIN
IL
IL(SCp)
VOUT
td(SC)
IIL
IIS
VOUT>>0
VOUT=0
IIS
t
t
Shut down remains latched until next reset via input.
Sense current saturation can occur at very high
inrush currents (see IIS,lim on page 6).
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Data Sheet BTS555
Figure 4: Overtemperature,
Reset if (IIN=low) and (Tj<Tjt)
I IN
IS
V
OUT
T
J
t
Figure 5: Undervoltage restart of charge pump,
overvoltage clamp
VOUT
VIN = 0
VON(CL)
dynamic, short
Undervoltage
not below
VbIN(u)
6
4
IIN = 0
2
V ON(CL)
0
0
VbIN(u)
VbIN(ucp)
Infineon Technologies AG
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2010-June-01
Data Sheet BTS555
Package Dimensions
All dimensions in mm
PG-TO218-5-146
BTS555 E3146
Green Product
15 ±0.2
To meet the world-wide customer requirements for
environmentally friendly products and to be compliant
with government regulations the device is available as
a green product. Green products are RoHS-Compliant
(i.e Pb-free finish on leads).
14.8
10.8 ±0.2
4.9
2 +0.1
-0.02
B
0.06
A
14 ±0.5
1.7
1)
Revision History
12.5 ±0.3
20.3 ±0.2
4
4 +0.15
C
Version
Changes
2010-June-01
RoHS-compliant version of BTS555
Page 1, page 16: RoHS compliance
statement and Green product
feature added, package variant with
staggered leads removed
Page 2: pin marking removed.
Page 11: Options overview reduced.
Package drawings updated
Revision history added
Legal disclaimer updated
0...0.1
1.1
2.54
0.5 +0.15
0.5 +0.2
0.25
M
A B C
2.5
2008-June-24
4 x 2.54 = 10.16
1) Punch direction, burr max. 0.04
General tolerances ± 0.1
P-TO218-5-146-PO V01
Edition 2010-06-01
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG.
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the
failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life
support devices or systems are intended to be implanted in the human body or to support and/or maintain and
sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other
persons may be endangered.
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