BTS612N1 E3128A Data Sheet (418 KB, EN)

PROFET® BTS612N1
Smart Two Channel High-Side Power Switch
Product Summary
Overvoltage protection
Operating voltage
Features
Vbb(AZ)
Vbb(on)
channels:
 Overload protection
 Current limitation
 Short circuit protection
 Thermal shutdown
 Overvoltage protection (including load dump)
 Fast demagnetization of inductive loads
 Reverse battery protection1)
 Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
 Open drain diagnostic output
 Open load detection in OFF-state
 CMOS compatible input
 Loss of ground and loss of Vbb protection
 Electrostatic discharge (ESD) protection
 Green Product (RoHS compliant)
 AEC Qualified
On-state resistance RON
Load current (ISO) IL(ISO)
Current limitation
IL(SCr)
43
5.0 ... 34
V
V
both
each parallel
200
100 m
2.3
4.4
A
4
4
A
PG-TO263-7-2
Application
 C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
 All types of resistive, inductive and capacitve loads
 Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic

feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.
Voltage
source
+ V bb
Current
lim it 1
Overvoltage
protection
Gate 1
protection
4
V Logic
3
6
Level shifter
sensor
Rectifier 1
Lim it for
unclam ped
ind. loads 1
OUT1
1
Tem perature
sensor 1
IN1
IN2
ESD
5
Voltage
Logic
Open load
Short to Vbb
detection 1
Charge
pum p 1
Charge
pum p 2
ST
Current
lim it 2
Level shifter
Rectifier 2
Gate 2
protection
Lim it for
unclam ped
ind. loads 2
OUT2
Tem perature
7
Load
sensor 2

PROFET
Open load
Short to Vbb
detection 2
GND
2
Signal GND
Load GND
)
1
With external current limit (e.g. resistor RGND=150 ) in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Data Sheet
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BTS612N1
Pin
Symbol
Function
1
OUT1 (Load, L)
Output 1, protected high-side power output of channel 1
2
GND
Logic ground
3
IN1
Input 1, activates channel 1 in case of logical high signal
4
Vbb
5
ST
Positive power supply voltage,
the tab is shorted to this pin
Diagnostic feedback: open drain, low on failure
6
IN2
Input 2, activates channel 2 in case of logical high signal
7
OUT2 (Load, L)
Output 2, protected high-side power output of channel 2
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Supply voltage (overvoltage protection see page 4)
Supply voltage for short circuit protection
Tj Start=-40 ...+150°C
Load
dump protection2) VLoadDump = UA + Vs, UA = 13.5 V
3)
RI = 2 , RL= 5.3 , td= 200 ms, IN= low or high
Load current (Short circuit current, see page 5)
Operating temperature range
Storage temperature range
Power dissipation (DC), TC  25 °C
Inductive load switch-off energy dissipation, single pulse
Vbb = 12V, Tj,start = 150°C, TC = 150°C const.
one channel, IL = 2.3 A, ZL = 89 mH, 0 :
both channels parallel, IL = 4.4 A, ZL = 47 mH, 0 :
Symbol
Vbb
Vbb
Values
43
34
Unit
V
V
60
V
IL
Tj
Tstg
Ptot
self-limited
-40 ...+150
-55 ...+150
36
A
°C
EAS
290
580
mJ
1.0
2.0
kV
-10 ... +16
2.0
5.0
V
mA
VLoad dump4)
W
see diagrams on page 9
Electrostatic discharge capability (ESD)
(Human Body Model)
IN: VESD
all other pins:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
VIN
IIN
IST
see internal circuit diagrams page 7
)
2
3)
4)
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a
150  resistor in the GND connection and a 15 k resistor in series with the status pin. A resistor for the
protection of the input is integrated.
RI = internal resistance of the load dump test pulse generator
VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
Data Sheet
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BTS612N1
Thermal Characteristics
Parameter and Conditions
Thermal resistance
Symbol
chip - case, both channels: RthJC
each channel:
junction - ambient (free air): RthJA
SMD version, device on PCB5):
min
----
Values
typ
max
-3.5
-7.0
-75
37
Unit
K/W
Electrical Characteristics
Parameter and Conditions, each channel
Symbol
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Values
min
typ
max
Unit
Load Switching Capabilities and Characteristics
On-state resistance (pin 4 to 1 or 7)
IL = 1.8 A
Tj=25 °C: RON
--
160
200
400
1.8
3.5
320
2.3
4.4
--
--
--10
ton
toff
80
80
200
200
400
400
s
dV /dton
0.1
--
1
V/s
-dV/dtoff
0.1
--
1
V/s
each channel
Tj=150 °C:
Nominal load current, ISO Norm (pin 4 to 1 or 7)
VON = 0.5 V, TC = 85 °C
each channel: IL(ISO)
both channels parallel:
Output current (pin 1 or 7) while GND disconnected
or GND pulled up, Vbb=30 V, VIN= 0, see diagram
page 8
Turn-on time
IN
to 90% VOUT:
Turn-off time
IN
to 10% VOUT:
RL = 12 , Tj =-40...+150°C
Slew rate on
10 to 30% VOUT, RL = 12 , Tj =-40...+150°C
Slew rate off
70 to 40% VOUT, RL = 12 , Tj =-40...+150°C
)
5
IL(GNDhigh)
m
A
mA
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb
connection. PCB is vertical without blown air.
Data Sheet
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BTS612N1
Parameter and Conditions, each channel
Symbol
Values
min
typ
max
Vbb(on)
Vbb(under)
Vbb(u rst)
5.0
3.5
--
----
Vbb(ucp)
--
Vbb(under)
Vbb(over)
Vbb(o rst)
Vbb(over)
Vbb(AZ)
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Operating Parameters
Operating voltage6)
Undervoltage shutdown
Undervoltage restart
Tj =-40...+150°C:
Tj =-40...+150°C:
Tj =-40...+25°C:
Tj =+150°C:
Undervoltage restart of charge pump
see diagram page 12
Undervoltage hysteresis
Vbb(under) = Vbb(u rst) - Vbb(under)
Overvoltage shutdown
Tj =-40...+150°C:
Overvoltage restart
Tj =-40...+150°C:
Overvoltage hysteresis
Tj =-40...+150°C:
7)
Overvoltage protection
Tj =-40...+150°C:
Ibb=40 mA
Standby current (pin 4),
VIN=0
Tj=-40...+150°C:
8)
Operating current (Pin 2) , VIN=5 V
both channels on, Tj =-40...+150°C,
Operating current (Pin 2)8)
one channel on, Tj =-40...+150°C:,
6)
7)
)
8
Unit
V
V
V
5.6
34
5.0
5.0
7.0
7.0
--
0.2
--
V
34
33
-42
--0.5
47
43
----
V
V
V
V
V
A
Ibb(off)
IGND
---
90
0.6
150
1.2
mA
IGND
--
0.4
0.7
mA
At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT Vbb - 2 V
See also VON(CL) in table of protection functions and circuit diagram page 8.
Add IST, if IST > 0, add IIN, if VIN>5.5 V
Data Sheet
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BTS612N1
Parameter and Conditions, each channel
Symbol
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Protection Functions9)
Initial peak short circuit current limit (pin 4 to 1
or 7)
Tj =-40°C:
Tj =25°C:
Tj =+150°C:
Repetitive short circuit shutdown current limit
Tj = Tjt (see timing diagrams, page 12)
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL)
IL= 40 mA:
Thermal overload trip temperature
Thermal hysteresis
Reverse battery (pin 4 to 2) 10)
Values
min
typ
max
Unit
IL(SCp)
5.5
4.5
2.5
9.5
7.5
4.5
13
11
7
A
--
4
--
A
41
150
---
47
-10
--
53
--32
V
°C
K
V
Reverse battery voltage drop (Vout > Vbb)
IL = -1.9 A, each channel
Tj=150 °C: -VON(rev)
--
610
--
mV
Diagnostic Characteristics
Open load detection current
--
30
--
A
2
3
4
V
VON(CL)
Tjt
Tjt
-Vbb
IL(off)
(included in standby current Ibb(off))
Open load detection voltage
IL(SCr)
Tj=-40..150°C: VOUT(OL)
)
9
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
10)
Requires 150  resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 8).
Data Sheet
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BTS612N1
Parameter and Conditions, each channel
Symbol
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Values
min
typ
max
Input and Status Feedback11)
Input resistance
RI
2.5
Tj=-40..150°C, see circuit page 7
Input turn-on threshold voltage
Tj V
=-40..+150°C:
1.7
IN(T+)
Input turn-off threshold voltage
Tj =-40..+150°C:
VIN(T-)
1.5
Input threshold hysteresis
 VIN(T)
-Off state input current (pin 3 or 6), VIN = 0.4 V,
IIN(off)
1
Tj =-40..+150°C
Unit
3.5
6
k
--0.5
--
3.5
--50
V
V
V
A
20
50
90
A
On state input current (pin 3 or 6), VIN = 3.5 V,
Tj =-40..+150°C
IIN(on)
Delay time for status with open load
td(ST OL3)
--
220
--
s
Status output (open drain)
Zener limit voltage Tj =-40...+150°C, IST = +1.6 mA: VST(high)
ST low voltage
Tj =-40...+25°C, IST = +1.6 mA: VST(low)
Tj = +150°C, IST = +1.6 mA:
5.4
---
6.1
---
-0.4
0.6
V
after Input neg. slope (see diagram page 12)
11)
If a ground resistor RGND is used, add the voltage drop across this resistor.
Data Sheet
6
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BTS612N1
Truth Table
Normal operation
Open load
Channel 1
Channel 2
Short circuit to Vbb
Channel 1
Channel 2
Overtemperature
both channel
Channel 1
Channel 2
Undervoltage/ Overvoltage
L = "Low" Level
H = "High" Level
IN1
IN2
OUT1
OUT2
ST
BTS611L1
ST
BTS612N1
L
L
H
H
L
L
H
L
H
X
L
L
H
L
H
L
H
L
H
X
L
L
H
L
H
X
L
L
H
H
Z
Z
H
L
H
X
H
H
H
L
H
L
H
L
H
X
Z
Z
H
L
H
X
H
H
H
H
L
H
H
L
H
H
L
H
H
L
H
X
L
X
H
L
H
X
X
X
L
L
H
L
H
X
X
X
L
H
X
L
H
X
L
L
L
L
L
X
X
L
H
H
H
L
L
L
X
X
L
L
L
H
H
H
H
12
H(L ))
H
L
H(L12))
H
L
13
L )
H
14
H(L ))
L13)
H
H(L14))
H
L
L
H
L
H
L
H
X = don't care
Z = high impedance, potential depends on external circuit
Status signal after the time delay shown in the diagrams (see fig 5. page 12)
Terms
V
L
H
H
H
L
L
H
L
H
L
H
Input circuit (ESD protection)
bb
4
I IN1
3
Ibb
IN1
Vbb
IN2
PROFET
V
ON1
VON2
OUT1
I IN2
6
I ST
OUT2
ST
V
V
IN1 IN2 V
5
ST
GND
GND
I
I L1
I L2
ESD-ZD I
7
I
I
V
OUT1
2
R
1
R
IN
I
GND
GND
VOUT2
ESD zener diodes are not to be used as voltage clamp
at DC conditions. Operation in this mode may result in
a drift of the zener voltage (increase of up to 1 V).
) With additional external pull up resistor
An external short of output to Vbb, in the off state, causes an internal current from output to ground. If RGND
is used, an offset voltage at the GND and ST pins will occur and the VST low signal may be errorious.
14)
Low resistance to Vbb may be detected in the ON-state by the no-load-detection
12
13)
Data Sheet
7
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BTS612N1
Status output
Open-load detection
+5V
OFF-state diagnostic condition: VOUT > 3 V typ.; IN low
R ST(ON)
ST
ESDZD
GND
OFF
ESD-Zener diode: 6.1 V typ., max 5 mA;
RST(ON) < 380  at 1.6 mA, ESD zener diodes are not
to be used as voltage clamp at DC conditions.
Operation in this mode may result in a drift of the zener
voltage (increase of up to 1 V).
I
L(OL)
Open load
detection
Logic
unit
V
OUT
Signal GND
Inductive and overvoltage output clamp
GND disconnect
+ V bb
V
Z
V
VON
4
bb
3
IN1
Ibb
Vbb
OUT1
OUT
GND
6
IN2
PROFET
ST
GND
OUT2
P R OFE T
5
1
7
2
V
VON clamped to 47 V typ.
V V
IN1 IN2 ST
V
GND
Any kind of load. In case of Input=high is VOUT  VIN - VIN(T+) .
Overvolt. and reverse batt. protection
Due to VGND >0, no VST = low signal available.
+ V bb
IN1
V
RI
GND disconnect with GND pull up
Z2
4
IN2
3
Logic
R ST
V
ST
V
OUT1
6
IN2
5
GND
Vbb
IN1
V
Z1
IN1
IN2
PROFET
ST
GND
OUT2
1
7
2
R GND
Signal GND
V
VZ1 = 6.1 V typ., VZ2 = 47 V typ., RI= 3.5 k typ
RGND= 150 
Data Sheet
V
bb
ST
V
GND
Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND >0, no VST = low signal available.
8
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BTS612N1
with an approximate solution for RL  0 :
Vbb disconnect with energized inductive
load
EAS=
4
3
IN1
OUT1
6
IN2
PROFET
ST
GND
OUT2
5
Maximum allowable load inductance for
a single switch off (both channels parallel)
Vbb
high
1
L = f (IL ); Tj,start = 150°C,TC = 150°C const.,
Vbb = 12 V, RL = 0 
L [mH]
1000
7
2
V
IL· L
IL·RL
·(V + |VOUT(CL)|)· ln (1+
)
2·RL bb
|VOUT(CL)|
bb
Normal load current can be handled by the PROFET
itself.
100
Vbb disconnect with charged external
inductive load
4
3
IN1
Vbb
OUT1
high
6
IN2
ST
10
PROFET
OUT2
5
1
D
7
GND
2
V
bb
1
If other external inductive loads L are connected to the PROFET,
additional elements like D are necessary.
2
3
4
5
6
7
8
IL [A]
Inductive Load switch-off energy
dissipation
E bb
E AS
IN
PROFET
=
ELoad
Vbb
OUT
ST
EL
GND
ZL
{
L
RL
ER
Energy stored in load inductance:
2
EL = 1/2·L·I L
While demagnetizing load inductance, the energy
dissipated in PROFET is
EAS= Ebb + EL - ER=  VON(CL)·iL(t) dt,
Data Sheet
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BTS612N1
Typ. transient thermal impedance chip case
ZthJC = f(tp), one Channel active
ZthJC [K/W]
10
1
D=
0.5
0.2
0.1
0.05
0.02
0.01
0
0.1
0.01
1E-5
1E-4
1E-3
1E-2
1E-1
1E0
1E1
tp [s]
Transient thermal impedance chip case
ZthJC = f(tp), both Channel active
ZthJC [K/W]
10
1
D=
0.5
0.2
0.1
0.05
0.02
0.01
0
0.1
0.01
1E-5
1E-4
1E-3
1E-2
1E-1
1E0
1E1
tp [s]
Data Sheet
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BTS612N1
Timing diagrams
Both channels are symmetric and consequently the diagrams
are valid for each channel as well as for permuted channels
Figure 1a: Vbb turn on:
Figure 2b: Switching an inductive load
IN1
IN2
IN
V bb
ST
V
OUT1
V
OUT
V
OUT2
I
L
ST open drain
t
t
Figure 2a: Switching a lamp:
IN
ST
V
I
OUT
L
t
Data Sheet
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BTS612N1
Figure 3a: Short circuit
shut down by overtempertature, reset by cooling
IN
Figure 5a: Open load: detection in OFF-state, turn
on/off to open load
IN1
other channel: normal operation
IN2
channel 2: normal operation
IL
V OUT1
I L(SCp)
I L(SCr)
I L1
channel 1: open load
t
ST
d(ST OL3)
t d(ST OL3)
ST
t
t
Heating up may require several milliseconds, depending on
external conditions
td(ST,OL3) depends on external circuitry because of high
impedance
*) IL = 30 A typ
Figure 4a: Overtemperature:
Reset if Tj <Tjt
Figure 6a: Undervoltage:
IN
IN
V
bb
ST
V
bb(under)
Vbb(u cp)
V
bb(u rst)
V
OUT
V OUT
T
J
ST open drain
t
Data Sheet
t
12
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BTS612N1
Figure 6b: Undervoltage restart of charge pump
on-state
off-state
V
V
V
bb(u rst)
bb(over)
off-state
VON(CL)
V on
bb(o rst)
V
bb(u cp)
V
bb(under)
V bb
charge pump starts at Vbb(ucp) =5.6 V typ.
Figure 7a: Overvoltage:
IN
V bb
V ON(CL)
Vbb(over)
V bb(o rst)
V
OUT
ST
t
Data Sheet
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BTS612N1
Package and Ordering Code
Published by
Infineon Technologies AG,
D-81726 München
© Infineon Technologies AG 2013
All Rights Reserved.
All dimensions in mm
PG-TO263-7-2
BTS612N1 E3128A
Ordering code
SP001104824
Attention please!
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components and shall not be considered as a guarantee of
characteristics.
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descriptions and charts stated herein.
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Due to technical requirements components may contain
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Infineon Technologies Components may only be used in lifesupport devices or systems with the express written
approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the
failure of that life-support device or system, or to affect the
safety or effectiveness of that device or system. Life support
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human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to
assume that the health of the user or other persons may be
endangered.
Data Sheet
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2013-10-11
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