BTS6142D Data Sheet (1.1 MB, EN)

Data Sheet, V1.1, February 2007
BTS 6142D
Smart High-Side Power Switch
PROFET
One Channel, 12 mΩ
Automotive Power
N e v e r
s t o p
t h i n k i n g .
Smart High-Side Power Switch
BTS 6142D
Table of Contents
Page
Product Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
1.1 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
1.2 Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
2 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
2.1 Pin Assignment BTS 6142D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
2.2 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
3.1 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4 Block Description and Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . .10
4.1 Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
4.1.1 Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.1.2 Output On-State Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.1.3 Output Inductive Clamp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.1.4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
4.2 Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
4.2.1 Over-Load Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4.2.2 Short circuit impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
4.2.3 Reverse Polarity Protection - ReversaveTM . . . . . . . . . . . . . . . . . . . . . . 18
4.2.4 Over-Voltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
4.2.5 Loss of Ground Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
4.2.6 Loss of Vbb Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
4.2.7 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
4.3 Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23
4.3.1 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
5 Package Outlines BTS 6142D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .27
6 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28
Data Sheet
2
V1.1, 2007-02-28
Smart High-Side Power Switch
PROFET
BTS 6142D
Product Summary
PG-TO252-5-11
The BTS 6142D is a one channel high-side power
switch in PG-TO252-5-11 package providing
embedded protective functions including
ReverSave™.
The power transistor is built by a N-channel vertical
power MOSFET with charge pump. The design is
based on Smart SIPMOS chip on chip technology.
Operating voltage
Vbb(on)
5.5 .. 24 V
Over-voltage protection
VON(CL)
RDS(ON)
39 V
7A
Current limitation
IL(nom)
IL(ISO)
IL6(SC)
Stand-by current for whole device with load
Ibb(OFF)
6 µA
On-State resistance
Nominal load current
Load current (ISO)
12 mΩ
27 A
50 A
Basic Features
•
•
•
•
•
•
•
Very low standby current
Current controlled input pin
Improved electromagnetic compatibility (EMC)
Fast demagnetization of inductive loads
Stable behavior at under-voltage
Green Product (RoHS compliant)
AEC qualified
Type
Package
BTS 6142D
PG-TO252-5-11
Data Sheet
3
V1.1, 2007-02-28
Smart High-Side Power Switch
BTS 6142D
Protective Functions
•
•
•
•
•
•
•
•
•
•
ReverSave™, channel switches on in case of reverse polarity
Reverse battery protection without external components
Short circuit protection with latch
Over-load protection
Multi-step current limitation
Thermal shutdown with restart
Over-voltage protection (including load dump)
Loss of ground protection
Loss of Vbb protection (with external diode for charged inductive loads)
Electrostatic discharge protection (ESD)
Diagnostic Functions
• Proportional load current sense (with defined fault signal in case of overload
operation, over temperature shutdown and/or short circuit shutdown)
• Open load detection in ON-state by load current sense
Applications
• µC compatible high-side power switch with diagnostic feedback for 12 V grounded
loads
• All types of resistive, inductive and capacitive loads
• Most suitable for loads with high inrush currents, so as lamps
• Replaces electromechanical relays, fuses and discrete circuits
Data Sheet
4
V1.1, 2007-02-28
Smart High-Side Power Switch
BTS 6142D
Overview
1
Overview
The BTS 6142D is a one channel high-side power switch (12 mΩ) in PG-TO252-5-11
power package providing embedded protective functions including ReverSaveTM.
ReverSaveTM is a protection feature that causes the power transistors to switch on in
case of reverse polarity. As a result, the power dissipation is reduced.
The BTS 6142D has a current controlled input and offers a diagnostic feedback with load
current sense. The design is based on Smart SIPMOS chip on chip technology.
1.1
Block Diagram
logic IC
Rbb
base chip
Vbb
voltage sensor
IIN
VIS
VIN
IS
ESD
IN
driver
logic
I IS
gate control
&
charge pump
T
clamp for
inductive load
current
limitation
load current
sense
forward voltage drop detection
RIS
OUT
IL
LOAD
over
temperature
Overview .emf
Figure 1
Data Sheet
Block Diagram
5
V1.1, 2007-02-28
Smart High-Side Power Switch
BTS 6142D
Overview
1.2
Terms
Following figure shows all terms used in this data sheet.
Vbb VbIN
V bIS
Ibb
IIN
IN
VIN
VON
VBB
BTS 6142D
RIN
IIS
V IS
IS
OUT
IL
VOUT
RIS
Terms.emf
Figure 2
Data Sheet
Terms
6
V1.1, 2007-02-28
Smart High-Side Power Switch
BTS 6142D
Pin Configuration
2
Pin Configuration
2.1
Pin Assignment BTS 6142D
TAB
IN
Vbb
IS
OUT
3
4
5
OUT
2
1
Vbb
TO252-5 .emf
Figure 3
Pin Configuration PG-TO252-5-11
2.2
Pin Definitions and Functions
Pin
Symbol
I/O
Function
1
OUT
O
Output; output to the load; pin 1 and 5 must be
externally shorted.1)
2
IN
I
Input; activates the power switch if shorted to
ground.
3, Tab
Vbb
-
Supply Voltage; positive power supply voltage; tab
and pin 3 are internally shorted.
4
IS
O
Sense Output; Diagnostic feedback; provides at
normal operation a sense current proportional to the
load current; in case of overload, over temperature
and/or short circuit a defined current is provided (see
Table 1 "Truth Table" on Page 23).
5
OUT
O
Output; output to the load; pin 1 and 5 must be
externally shorted.1)
1)
Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability,
the clamping capability and decrease the current sense accuracy.
Data Sheet
7
V1.1, 2007-02-28
Smart High-Side Power Switch
BTS 6142D
Electrical Characteristics
3
Electrical Characteristics
3.1
Maximum Ratings
Stresses above the ones listed here may cause permanent damage to the device.
Exposure to maximum rating conditions for extended periods may affect device reliability.
Tj = 25 °C (unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
min.
Unit Test
Conditions
max.
Supply Voltage
3.1.1
Supply voltage
3.1.2
3.1.3
Vbb
-16
38
V
-
Supply voltage for full short
Vbb(SC)
circuit protection (single pulse)
(Tj = -40°C .. 150°C) 1)
0
24
V
−
Supply Voltage for Load Dump Vbb(LD)
protection 2)
-
45
V
RI = 2 Ω
RL = 1.5 Ω
-16
63
V
-
-140
15
mA
-
Logic Pins
3.1.4
Voltage at input pin
3.1.5
Current through input pin
3.1.6
Voltage at current sense pin
3.1.7
Current through sense pin
3.1.8
Input voltage slew rate
3)
Vb,IN
IIN
Vb,IS
IIS
dVbIN/dt
-16
56
V
-
-140
15
mA
-
-20
20
V/µs -
Power Stages
3.1.9
Load current 4)
3.1.10 Maximum energy dissipation
per channel (single pulse)
3.1.11 Total power dissipation (DC)
for whole device
IL
EAS
-
ILx(SC) A
-
0.25
J
Ptot
-
50
W
Tj
Tstg
-40
150
°C
-
-55
150
°C
-
-
IL(0) = 20 A
Tj(0) = 150°C
TC = 85 °C
Tj ≤ 150 °C
Temperatures
3.1.12 Junction temperature
3.1.13 Storage temperature
Data Sheet
8
V1.1, 2007-02-28
Smart High-Side Power Switch
BTS 6142D
Electrical Characteristics
Tj = 25 °C (unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
min.
max.
-3
3
Unit Test
Conditions
ESD Susceptibility
3.1.14 ESD susceptibility HBM
VESD
kV
according to
EIA/JESD
22-A 114B
1)
Short circuit is defined as a combination of remaining resistances and inductances. See Figure 13.
2)
Load Dump is specified in ISO 7637, RI is the internal resistance of the Load Dump pulse generator
3)
Slew rate limitation can be achieved by means of using a series resistor for the small signal driver or in series
in the input path. A series resistor RIN in the input path is also required for reverse operation at Vbb≤-16V. See
also Figure 14.
4)
Current limitation is a protection feature. Operation in current limitation is considered as “outside” normal
operating range. Protection features are not designed for continuous repetitive operation.
Data Sheet
9
V1.1, 2007-02-28
Smart High-Side Power Switch
BTS 6142D
Power Stages
4
Block Description and Electrical Characteristics
4.1
Power Stages
The power stage is built by a N-channel vertical power MOSFET (DMOS) with charge
pump.
4.1.1
Input Circuit
Figure 4 shows the input circuit of the BTS 6142D. The current source to Vbb ensures
that the device switches off in case of open input pin. The zener diode protects the input
circuit against ESD pulses.
VbIN
Rbb
IIN
IN
Vbb
VZ,IN
I
VIN
Input.emf
Figure 4
Input Circuit
A high signal at the required external small signal transistor pulls the input pin to ground.
A logic supply current IIN is flowing and the power DMOS switches on with a dedicated
slope, which is optimized in terms of EMC emission.
IIN
VOUT
tON
tOFF
t
90%
50%
dV/dtON
dV/dtOFF
25%
10%
t
Figure 5
Data Sheet
SwitchOn.emf
Switching a Load (resistive)
10
V1.1, 2007-02-28
Smart High-Side Power Switch
BTS 6142D
Power Stages
4.1.2
Output On-State Resistance
The on-state resistance RDS(ON) depends on the supply voltage as well as the junction
temperature Tj. Figure 6 shows these dependencies for the typical on-state resistance.
The on-state resistance in reverse polarity mode is described in Section 4.2.3.
5 21
Vbb = 12 V
5 21
W\S
PΩ
PΩ
Tj = 25°C
W\S
ƒ&
7M
Figure 6
9
9 EE
Typical On-State Resistance
At small load currents the resistance is artificially increased to improve current sense
accuracy. Therefore the forward voltage drop VON at small load currents is no more
proportional to the load current IL , but is controlled by an internal “two level controller”
to remain clamped to a defined value VON(NL). Figure 7 shows the dependency for a
typical device.
Data Sheet
11
V1.1, 2007-02-28
Smart High-Side Power Switch
BTS 6142D
Power Stages
Vbb = 12 V
Tj = 25°C
W\S
9 21
9
9 21a, /
9 21≥9 211/
$
,/
Figure 7
4.1.3
Typical Output Voltage Drop Limitation
Output Inductive Clamp
When switching off inductive loads, the output voltage VOUT drops below ground
potential due to the involved inductance ( -diL/dt = -vL/L ; -VOUT ≅ -VL ).
V bb
VON
VBB
IL
OUT V OUT
L,
RL
OutputClamp .emf
Figure 8
Output Clamp
To prevent destruction of the device, there is a voltage clamp mechanism implemented
that keeps the voltage drop across the device at a certain level (VON(CL)). See Figure 8
and Figure 9 for details. The maximum allowed load inductance is limited.
Data Sheet
12
V1.1, 2007-02-28
Smart High-Side Power Switch
BTS 6142D
Power Stages
V OUT
ON
OFF
Vbb
t
VON(CL)
V OUT(CL)
IL
t
Figure 9
InductiveLoad.emf
Switching an Inductance
Maximum Load Inductance
While de energizing inductive loads, energy has to be dissipated in the BTS 6142D. This
energy can be calculated via the following equation:
V bb – V ON ( CL )


RL ⋅ IL
L
E = V ON ( CL ) ⋅ ---------------------------------------- + I L ⋅ -----⋅ ln  1 + -------------------------------------RL
R
V
–
V

L
ON(CL)
bb
In the event of de-energizing very low ohmic inductances (RL≈0) the following, simplified
equation can be used:
V ON(CL)
2
1
E = --- LI L ⋅ -------------------------------------2
V ON(CL) – V bb
The energy, which is converted into heat, is limited by the thermal design of the
component. For given starting currents the maximum allowed inductance is therefore
limited. See Figure 10 for the maximum allowed inductance at Vbb=12V.
Data Sheet
13
V1.1, 2007-02-28
Smart High-Side Power Switch
BTS 6142D
Power Stages
Vbb = 12 V
Tj(o) ≤ 150°C
/
P+
$ ,/
Figure 10
Data Sheet
Maximum load inductance for single pulse, Tj,Start = 150°C
14
V1.1, 2007-02-28
Smart High-Side Power Switch
BTS 6142D
Power Stages
4.1.4
Electrical Characteristics
Vbb = 12 V, Tj = 25 °C (unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
Unit
Test Conditions
38
V
min.
typ.
max.
5.5
-
General
4.1.1
Operating voltage
Vbb
4.1.2
Undervoltage
shutdown 1)
VbIN(u)
-
2.5
3.5
V
VIN = 0 V
Tj = -40..150 °C
-
4.1.3
Undervoltage restart
of charge pump
Vbb(ucp)
-
4
5.5
V
-
4.1.4
Operating current
-
1.4
2.2
mA
4.1.5
Stand-by current
Tj = -40 °C, Tj = 25 °C
Tj ≤ 120 °C 1)
Tj = 150 °C
IIN
Ibb(OFF)
Tj = -40..150 °C
IIN = 0 A
-
3
3
9
6
6
16
µA
Input characteristics
4.1.6
Input current for
turn-on
IIN(on)
-
1.4
2.2
mA
4.1.7
Input current for
turn-off
IIN(off)
-
-
30
µA
VbIN≥Vbb(ucp)-VIN,
Tj = -40 … 150 °C
Tj = -40 … 150 °C
mΩ
VIN=0V, IL=7.5A,
-
10
17
12
22
12
22
17
29
-
30
65
4.1.10 Nominal load current IL(nom)
(Tab to pin1 & 5) 2) 3)
7
8.5
IL(ISO)
27
33
Output characteristics
4.1.8
4.1.9
On-state resistance
RDS(ON)
Tj=25°C
Tj=150°C
Vbb=5.5V, Tj=25°C
Vbb=5.5V, Tj=150°C
Output voltage drop
VON(NL)
limitation at small load
currents
ISO load current
(Tab to pin 1 & 5) 3)
Data Sheet
15
(Tab to pin 1 and
5)
mV
Tj = -40..150 °C
-
A
-
A
Ta = 85 °C
VON ≤ 0.5 V,
Tj ≤ 150 °C
Tc = 85 °C
VON ≤ 0.5 V,
Tj ≤ 150 °C
V1.1, 2007-02-28
Smart High-Side Power Switch
BTS 6142D
Power Stages
Vbb = 12 V, Tj = 25 °C (unless otherwise specified)
Pos.
Parameter
Symbol
VON(CL)
4.1.11 Output clamp
4.1.12 Inverse current output -VON(inv)
voltage drop 1) 4)
(Tab to pin 1 and 5)
Tj = 25 °C
Tj = 150 °C
Limit Values
min.
typ.
max.
39
42
-
Unit
Test Conditions
V
IL = 40 mA
IL = -7.5 A,
RIS = 1 kΩ
mV
-
800
600
-
Timings
4.1.13 Turn-on time to
90% Vbb
tON
-
250
600
µs
4.1.14 Turn-off time to
10% Vbb
tOFF
-
250
600
µs
-
1
-
ms
4.1.15 Turn-on delay after
td(inv)
inverse operation 1)
VIN(inv) = VIN(fwd) = 0 V
RL = 2.2 Ω,
Tj = -40 … 150 °C
RL = 2.2 Ω,
Tj = -40 … 150 °C
Vbb > VOUT
RL = 2.2 Ω,
Tj = -40 … 150 °C
RL = 2.2 Ω,
Tj = -40 … 150 °C
4.1.16 Slew rate On
25% to 50% Vbb
dV/ dtON
-
0.3
0.7
V/µs
4.1.17 Slew rate Off
50% to 25% Vbb
-dV/
dtOFF
-
0.3
0.7
V/µs
Rthjc
Rthja
-
-
1.3
K/W
-
K/W
-
-
80
45
55
Thermal Resistance
4.1.18 Junction to case 1)
1)
4.1.19 Junction to ambient
free air
device on PCB 2)
1)
Not subject to production test, specified by design
2)
Device mounted on PCB (50 mm x 50 mm x 1.5mm epoxy, FR4) with 6 cm2 copper heatsinking area (one
layer, 70 µm thick) for Vbb connection. PCB is vertical without blown air.
3)
Not subject to production test, parameters are calculated from RDS(ON) and Rth
4)
Permanent Inverse operation results eventually in a current flow via the intrinsic diode of the power DMOS. In
this case the device switches on with a time delay td(inv) after the transition from inverse to forward mode. A
sense current IIS(fault) can be provided by the pin IS until standard forward operation is reached.
Note: Characteristics show the deviation of parameter at the given supply voltage and
junction temperature. Typical values show the typical parameters expected from
manufacturing.
Data Sheet
16
V1.1, 2007-02-28
Smart High-Side Power Switch
BTS 6142D
Protection Functions
4.2
Protection Functions
The device provides embedded protective functions. Integrated protection functions are
designed to prevent IC destruction under fault conditions described in the data sheet.
Fault conditions are considered as “outside” normal operating range. Protection
functions are neither designed for continuous nor repetitive operation.
4.2.1
Over-Load Protection
The load current IL is limited by the device itself in case of over-load or short circuit to
ground. There are multiple steps of current limitation ILx(SC) which are selected
automatically depending on the voltage drop VON across the power DMOS. Please note
that the voltage at the OUT pin is Vbb - VON. Figure 11 shows the dependency for a
typical device.
, /6&
Tj = 25°C
$
W\S
9 216&
Figure 11
9
9 21
Typical Current Limitation
Depending on the severity of the short condition as well as on the battery voltage the
resulting voltage drop across the device varies.
Whenever the resulting voltage drop VON exceeds the short circuit detection threshold
VON(SC), the device will switch off immediately and latch until being reset via the input.
The VON(SC) detection functionality is activated, when VbIN>10V typ. and the blanking
time td(SC1) expired after switch on.
In the event that either the short circuit detection via VON(SC) is not activated or that the
on chip temperature sensor senses over-temperature before the blanking time td(SC1)
expired, the device switches off resulting from over-temperature detection. After cooling
down with thermal hysteresis, the devices switches on again. Please refer to Figure 12
for details.
Data Sheet
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V1.1, 2007-02-28
Smart High-Side Power Switch
BTS 6142D
Protection Functions
VON(SC) detection
Over temperature detection
I IN
IIN
t
VON
VONx > VON(SC)
t
ILx(SC)
IL
t
IL
t
ϑj
tm
td(SC1)
thermal hysteresis
t
t
Over_Temp .emf
V_ON_detect.emf
Figure 12
4.2.2
Overload Behavior
Short circuit impedance
The capability to handle single short circuit events depends on the battery voltage as well
as on the primary and secondary short impedance. Figure 13 outlines allowable
combinations for a single short circuit event of maximum, secondary inductance for given
secondary resistance.
/ 6&
5uH
10mΩ
Vbb
IN OUT
PROFET
9 EE 9
X+
RSC
IS
LO AD
Vbb
SHORT
CIRCUIT
9 EE 9
9 EE 9
LSC
short_circuit.emf
PΩ
5 6&
Figure 13
4.2.3
Short circuit
Reverse Polarity Protection - ReversaveTM
The device can not block a current flow in reverse battery condition. In order to minimize
power dissipation, the device offers ReversaveTM functionality. In reverse polarity
condition the channel will be switched on provided a sufficient gate to source voltage is
generated VGS≈VRbb. Please refer to Figure 14 for details.
Data Sheet
18
V1.1, 2007-02-28
Smart High-Side Power Switch
BTS 6142D
Protection Functions
-Vbb
-IIN
IS
D RIS
-IL
-IIS
signal ground
Figure 14
Vbb
LOAD
IN
RIN
Rbb
Logic
IRbb
power ground
Reverse.emf
Reverse battery protection
Additional power is dissipated by the integrated Rbb resistor. Use following formula for
estimation of overall power dissipation Pdiss(rev) in reverse polarity mode.
2
2
P diss(rev) ≈ R ON(rev) ⋅ I L + R bb ⋅ IRbb
For reverse battery voltages up to Vbb <16V the pin IN or the pin IS should be low ohmic
connected to signal ground. This can be achieved e.g. by using a small signal diode D
in parallel to the input switch or by using a small signal MOSFET driver. For reverse
battery voltages higher then Vbb >16V an additional resistor RIN is recommended. For
reverse battery voltages higher then Vbb >16 the overall current through Rbb should be
about 80mA.
1 - + -------1 - = ----------------------------0,08A
-------V bb – 12V
RIN R IS
Note: No protection mechanism is active during reverse polarity. The IC logic is not
functional.
Data Sheet
19
V1.1, 2007-02-28
Smart High-Side Power Switch
BTS 6142D
Protection Functions
4.2.4
Over-Voltage Protection
Beside the output clamp for the power stage as described in Section 4.1.3 there is a
clamp mechanism implemented for all logic pins. See Figure 15 for details.
Logic
IN
IS
Figure 15
4.2.5
Vbb
VZ,IS
VZ,IN
Rbb
OUT
OverVoltage .emf
Over-Voltage Protection
Loss of Ground Protection
In case of complete loss of the device ground connections the BTS 6142D securely
changes to or remains in off state.
4.2.6
Loss of Vbb Protection
In case of complete loss of Vbb the BTS 6142D remains in off state.
In case of loss of Vbb connection with charged inductive loads a current path with load
current capability has to be provided, to demagnetize the charged inductances. It is
recommended to use a diode, a Z-diode, or a varistor (VZL+VD < 39 V or VZb+VD < 16 V
if RIN = 0). For higher clamp voltages currents through IN and IS have to be limited to
120 mA. Please refer to Figure 16 for details.
Vbb
IS
R bb
VD
Logic
IN
Vbb
Vbb
VZb
IN IS
Vbb
Logic
Rbb
VD
R IN
RIS
inductive
LOAD
RIN
VZL
Vbb_disconnect_A.emf
Figure 16
Data Sheet
R IS
inductive
LOAD
Vbb_disconnect_B.emf
Loss of Vbb
20
V1.1, 2007-02-28
Smart High-Side Power Switch
BTS 6142D
Protection Functions
4.2.7
Electrical Characteristics
Vbb = 12 V, Tj = +25 °C (unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
min.
typ.
max.
Load current limitation1) 2) IL6(SC)
Tj = -40 °C
Tj = +25 °C
Tj = +150 °C
50
110
100
75
160
-
Load current limitation 2) IL12(SC)
Tj = -40 °C
Tj = +25 °C
Tj = +150 °C
45
90
80
70
120
-
Load current limitation1) 2) IL18(SC)
Tj = -40 °C
Tj = +25 °C
Tj = +150 °C
30
60
60
50
90
-
Load current limitation 2) IL24(SC)
Tj = -40 °C
Tj = +25 °C
Tj = +150 °C
-
40
40
35
-
Load current limitation1) 2) IL30(SC)
Tj = -40 °C
Tj = +25 °C
Tj = +150 °C
-
25
25
25
4.5
Unit
Test Conditions
A
VON = 6 V,
Over-Load Protection
4.2.1
4.2.2
4.2.3
4.2.4
4.2.5
A
3.5
4.2.7
Short circuit shutdown td(SC1)
delay after input
current pos. slope3)
200
650
4.2.8
Thermal shut down
temperature
150
165
4.2.9
Thermal hysteresis 1) ∆Tj
Data Sheet
VON = 24 V,
tm = 170 µs,
(Tab to pin 1 and
5)
A
2.5
VON = 18 V,
(Tab to pin 1 and
5)
A
Short circuit shutdown VON(SC)
detection voltage 1)
VON = 12 V,
tm = 170 µs,
(Tab to pin 1 and
5)
A
4.2.6
Tj(SC)
(Tab to pin 1 and
5)
VON = 30 V,
(Tab to pin 1 and
5)
V
1200 µs
VbIN > 10 V typ.
VON > VON(SC),
Tj = -40 … 150 °C
-
°C
-
-
K
-
1)
-
21
10
V1.1, 2007-02-28
Smart High-Side Power Switch
BTS 6142D
Protection Functions
Vbb = 12 V, Tj = +25 °C (unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
min.
typ.
Unit
Test Conditions
mΩ
VIN = 0,
IL = -7.5A,
RIS = 1 kΩ,
max.
Reverse Battery
4.2.10 On-State resistance
RON(rev)
in case of reverse
polarity
Vbb=-8V, Tj=25°C 1)
Vbb=-8V, Tj=150°C 1)
Vbb=-12V, Tj=25°C
Vbb=-12V, Tj=150°C
4.2.11 Integrated resistor in
Vbb line
Rbb
-
12
20
12
18
16
27
15
24
-
100
150
(pin 1 and 5 to
TAB)
Ω
-
V
Ibb = 15 mA,
Tj = -40 … 150 °C
Over-Voltage
4.2.12 Over-voltage
protection
Input pin
Sense pin
VZ
VZ,IN
VZ,IS
63
67
-
V
56
61
-
V
1)
Not subject to production test, specified by design
2)
Short circuit current limit for max. duration of td(SC1), prior to shutdown, see also Figure 12.
3)
min. value valid only if input “off-signal” time exceeds 30 µs
Data Sheet
22
V1.1, 2007-02-28
Smart High-Side Power Switch
BTS 6142D
Diagnosis
4.3
Diagnosis
For diagnosis purpose, the BTS 6142D provides an IntelliSense signal at the pin IS.
The pin IS provides during normal operation a sense current, which is proportional to the
load current as long as Vb,IS>5V. The ratio of the output current is defined as kILIS=IL/IIS.
During switch-on no current is provided, until the forward voltage drops below VON<1V
typ. The output sense current is limited to IIS,lim.
The pin IS provides in case of any fault conditions a defined fault current IIS(fault). Fault
conditions are over-current (VON>1V typ.), current limit or over-temperature switch off.
The pin IS provides no current during open load in ON, de-energisation of inductive loads
and inverse current mode.
Vb,IS
Vbb R bb
IIS
VZ,IS
I IS(fault)
IS
VIS
R IS
Sense.emf
Figure 17
Block Diagram: Diagnosis
Table 1
Truth Table
Parameter
Input Current
Level
Output Level
Current Sense IIS
Normal
operation
L1)
H1)
L
H
≈ 0 (IIS(LL))
nominal
Overload
L
H
L
H
≈ 0 (IIS(LL))
Short circuit to GND L
H
L
L
Overtemperature
L
H
L
L
Short circuit to Vbb
L
H
H
H
Open load
Data Sheet
L
H
1)
Z
H
23
IIS,fault
≈ 0 (IIS(LL))
IIS,fault
≈ 0 (IIS(LL))
IIS,fault
≈ 0 (IIS(LL))
< nominal2)
≈ 0 (IIS(LL))
≈ 0 (IIS(LH))
V1.1, 2007-02-28
Smart High-Side Power Switch
BTS 6142D
Diagnosis
1)
H = “High” Level, L = “Low” Level, Z = high impedance, potential depends on external circuit
2)
Low ohmic short to Vbb may reduce the output current IL and therefore also the sense current IIS.
The accuracy of the provided current sense ratio (kILIS = IL / IIS) depends on the load
current. Please refer to Figure 18 for details. A typical resistor RIS of 1 kΩ is
recommended.
N ,/,6
PD[
W\S
PLQ
, /PLQ
Figure 18
Current sense ratio
$
,/
kILIS1)
Details about timings between the diagnosis signal IIS, the forward voltage drop VON and
the load current IL in ON-state can be found in Figure 19.
Note: During operation at low load current and at activated forward voltage drop
limitation the “two level control” of VON(NL) can cause a sense current ripple
synchronous to the “two level control” of VON(NL) . The ripple frequency increases
at reduced load currents.
1)
The curves show the behavior based on characterization data. The marked points are guaranteed in this Data
Sheet in Section 4.3.1 (Position 4.3.1).
Data Sheet
24
V1.1, 2007-02-28
Smart High-Side Power Switch
BTS 6142D
Diagnosis
IIN
normal operation
VON
VON<1V typ.
IL
I L1
IIS
I IS1
0.9*I IS1
t son(IS)
Figure 19
Data Sheet
I IN
VON>1V typ.
IL2
IIS2
IIS(lim) I IS(fault)
t
VON
t
IL
t
short
VON>VON(SC)
over-temperature
t
I Lx(SC)
IIS
IIS(fault)
t
VON<1V typ.
IL
I IS(fault)
t
IIS(LL)
tslc(IS)
t
tdelay(fault)
t
SwitchOn.emf
Timing of Diagnosis Signal in ON-state
25
V1.1, 2007-02-28
Smart High-Side Power Switch
BTS 6142D
Diagnosis
4.3.1
Electrical Characteristics
Vbb = 12 V, Tj = 25 °C (unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
min.
typ.
max.
-
10
-
8
7.5
6.5
3
10
10
10
10
12
13
16
30
Unit
Test Conditions
k
VIN = 0 V,
IIS < IIS,lim
Tj = -40..150 °C
-
-
Load Current Sense
4.3.1
Current sense ratio,
static on-condition
kILIS
IL=30A
IL=7.5A
IL=2.5A
IL=0.5A
IIN = 0 (e.g. during de
energizing of
inductive loads) 1)
disabled
4.3.2
Sense saturation
current 1)
IIS(lim)
2.5
6
10
mA
4.3.3
Sense current under
fault conditions
IIS(fault)
2.5
6
10
mA
4.3.4
Current sense
leakage current
IIS(LL)
–
0.1
0.5
µA
VON < 1 V, typ.
Tj = -40 … 150 °C
VON > 1 V, typ.
Tj = -40 … 150 °C
IIN = 0
4.3.5
Current sense offset
current
IIS(LH)
–
0.1
1
µA
VIN = 0, IL ≤ 0
4.3.6
Minimum load current IL(MIN)
for sense functionality
0.5
–
–
A
4.3.7
Current sense settling tson(IS)
time to 90% IIS_stat.1)
–
350
700
µs
4.3.8
Current sense settling tslc(IS)
time to 90% IIS_stat.1)
–
50
100
µs
4.3.9
Fault-Sense signal
tdelay(fault)
delay after input
current positive slope
200
650
1200 µs
VIN = 0,
Tj = -40 … 150 °C
IL = 0
20 A
Tj = -40 … 150 °C
IL = 10
20 A
Tj = -40 … 150 °C
VON > 1 V, typ.
Tj = -40 … 150 °C
1)
Not subject to production test, specified by design
Data Sheet
26
V1.1, 2007-02-28
Smart High-Side Power Switch
BTS 6142D
Package Outlines BTS 6142D
5
Package Outlines BTS 6142D
PG-TO252-5-11
(Plastic Dual Small Outline Package)
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products
and to be compliant with government regulations the device is available as a green
product. Green products are RoHS-Compliant (i.e Pb-free finish on leads and suitable
for Pb-free soldering according to IPC/JEDEC J-STD-020).
You can find all of our packages, sorts of packing and others in our
Infineon Internet Page “Products”: http://www.infineon.com/products.
Dimensions in mm
SMD = Surface Mounted Device
Data Sheet
27
V1.1, 2007-02-28
Smart High-Side Power Switch
BTS 6142D
Revision History
6
Revision History
Version
Date
Changes
V1.1
07-02-28
RoHS compliant version of BTS 6142D
changed IFX logo
page 3: Ordering code removed
page 3: “AEC qualified” and “RoHS” logos added
page 3, page 27: “AEC Stress Test Qualification” and “Green
Product (RoHS compliant)” added to feature list
page 3, page 27: Change to RoHS compliant package PGTO252-5-11
Legal disclaimer updated
V1.0
Data Sheet
05-10-25
initial version of Final Data Sheet
28
V1.1, 2007-02-28
Smart High-Side Power Switch
BTS 6142D
Edition 2007-02-28
Published by
Infineon Technologies AG,
81726 Munich, Germany
© Infineon Technologies AG 3/1/07.
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
Data Sheet
29
V1.1, 2007-02-28
http://www.infineon.com
Published by Infineon Technologies AG
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