BTS712N1 Data Sheet (1.3 MB, EN)

Smart High-Side Power Switch
Smart High-Side Power Switch
PROFET BTS712N1
Data Sheet
Rev 1.3, 2010-03-16
Automotive Power
Smart High-Side Power Switch
BTS712N1
Smart Four Channel Highside Power Switch
Features
• Overload protection
• Current limitation
• Short-circuit protection
• Thermal shutdown
• Overvoltage protection
(including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown
with auto-restart and hysteresis
• Open drain diagnostic output
• Open load detection in OFF-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection
Product Summary
Overvoltage Protection
Operating voltage
active channels:
On-state resistance RON
Nominal load current ,/120
Current limitation
,/6&U
Vbb(AZ)
43
V
Vbb(on)
5.0 ... 34
V
two parallel four parallel
one
200
100
50
mΩ
1.9
2.8
4.4
A
4
4
4
A
PG-DSO20
P-DSO-20
Application
• µC compatible power switch with diagnostic feedback
for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitive loads
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic

feedback, monolithically integrated in Smart SIPMOS technology.
Providing embedded protective functions.
Pin Definitions and Functions
Pin
1,10,
11,12,
15,16,
19,20
3
5
7
9
18
17
14
13
4
8
2
6
1)
Pin configuration (top view)
Symbol Function
Vbb
Positive power supply voltage. Design the
wiring for the simultaneous max. short circuit
currents from channel 1 to 4 and also for low
thermal resistance
IN1
Input 1 .. 4, activates channel 1 .. 4 in case of
IN2
logic high signal
IN3
IN4
OUT1
Output 1 .. 4, protected high-side power output
OUT2
of channel 1 .. 4. Design the wiring for the
OUT3
max. short circuit current
OUT4
ST1/2
Diagnostic feedback 1/2 of channel 1 and
channel 2, open drain, low on failure
ST3/4
Diagnostic feedback 3/4 of channel 3 and
channel 4, open drain, low on failure
GND1/2 Ground 1/2 of chip 1 (channel 1 and channel 2)
GND3/4 Ground 3/4 of chip 2 (channel 3 and channel 4)
Vbb
GND1/2
IN1
ST1/2
IN2
GND3/4
IN3
ST3/4
IN4
Vbb
1
2
3
4
5
6
7
8
9
10
•
20
19
18
17
16
15
14
13
12
11
Vbb
Vbb
OUT1
OUT2
Vbb
Vbb
OUT3
OUT4
Vbb
Vbb
With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Data Sheet
2
Rev 1.3, 2010-03-16
Smart High-Side Power Switch
BTS712N1
Block diagram
Four Channels; Open Load detection in off state;
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Data Sheet
3
Rev 1.3, 2010-03-16
Smart High-Side Power Switch
BTS712N1
Maximum Ratings at Tj = 25°C unless otherwise specified
Parameter
Symbol
Supply voltage (overvoltage protection see page 4)
Supply voltage for full short circuit protection
Tj,start = -40 ...+150°C
Load current (Short-circuit current, see page 5)
Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V
RI3) = 2 Ω, td = 200 ms; IN = low or high,
each channel loaded with RL = 7.1 Ω,
Operating temperature range
Storage temperature range
Power dissipation (DC)5
Ta = 25°C:
Ta = 85°C:
(all channels active)
Inductive load switch-off energy dissipation, single pulse
Vbb = 12V, Tj,start = 150°C5),
IL = 1.9 A, ZL = 66 mH, 0 Ω
one channel:
IL = 2.8 A, ZL = 66 mH, 0 Ω
two parallel channels:
IL = 4.4 A, ZL = 66 mH, 0 Ω
four parallel channels:
Vbb
Vbb
Values
Unit
43
34
V
V
IL
VLoad
self-limited
60
A
V
Tj
Tstg
Ptot
-40 ...+150
-55 ...+150
3.6
1.9
°C
EAS
150
320
800
mJ
VESD
1.0
kV
-10 ... +16
±2.0
±5.0
V
mA
16
44
35
K/W
4)
dump
W
see diagrams on page 9
Electrostatic discharge capability (ESD)
(Human Body Model)
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
VIN
IIN
IST
see internal circuit diagram page 8
Thermal resistance
junction - soldering point5),6)
junction - ambient5)
2)
3)
4)
5)
each channel:
one channel active:
all channels active:
Rthjs
Rthja
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a
150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for input
protection is integrated.
RI = internal resistance of the load dump test pulse generator
VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air. See page 14
Data Sheet
4
Rev 1.3, 2010-03-16
Smart High-Side Power Switch
BTS712N1
Electrical Characteristics
Parameter and Conditions, each of the four channels
Symbol
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Load Switching Capabilities and Characteristics
On-state resistance (Vbb to OUT)
each channel,
Tj = 25°C: RON
IL = 1.8 A
Tj = 150°C:
two parallel channels, Tj = 25°C:
four parallel channels, Tj = 25°C:
Nominal load current
one channel active:
two parallel channels active:
four parallel channels active:
5)
Device on PCB , Ta = 85°C, Tj ≤ 150°C
Output current while GND disconnected or pulled
up; Vbb = 30 V, VIN = 0, see diagram page 9
Turn-on time
to 90% VOUT:
Turn-off time
to 10% VOUT:
RL = 12 Ω, Tj =-40...+150°C
Slew rate on
10 to 30% VOUT, RL = 12 Ω,
Tj =-40...+150°C:
Slew rate off
70 to 40% VOUT, RL = 12 Ω,
Tj =-40...+150°C:
Operating Parameters
Operating voltage7)
Undervoltage shutdown
Undervoltage restart
Tj =-40...+150°C:
Tj =-40...+150°C:
Tj =-40...+25°C:
Tj =+150°C:
Undervoltage restart of charge pump
see diagram page 14
Tj =-40...+150°C:
Undervoltage hysteresis
∆Vbb(under) = Vbb(u rst) - Vbb(under)
Overvoltage shutdown
Tj =-40...+150°C:
Overvoltage restart
Tj =-40...+150°C:
Overvoltage hysteresis
Tj =-40...+150°C:
Overvoltage protection8)
Tj =-40...+150°C:
I bb = 40 mA
7)
8)
Values
min
typ
max
--
Unit
mΩ
165
320
200
400
1.7
2.6
4.1
83
42
1.9
2.8
4.4
100
50
--
A
--
--
10
mA
ton
toff
80
80
200
200
400
400
µs
dV/dton
0.1
--
1
V/µs
-dV/dtoff
0.1
--
1
V/µs
Vbb(on)
Vbb(under)
Vbb(u rst)
5.0
3.5
--
----
V
V
V
Vbb(ucp)
--
5.6
34
5.0
5.0
7.0
7.0
∆Vbb(under)
--
0.2
--
V
Vbb(over)
Vbb(o rst)
∆Vbb(over)
Vbb(AZ)
34
33
-42
--0.5
47
43
----
V
V
V
V
IL(NOM)
IL(GNDhigh)
V
At supply voltage increase up to Vbb = 5.6 V typ without charge pump, VOUT ≈Vbb - 2 V
see also VON(CL) in circuit diagram on page 8.
Data Sheet
5
Rev 1.3, 2010-03-16
Smart High-Side Power Switch
BTS712N1
Parameter and Conditions, each of the four channels
Symbol
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Standby current, all channels off
Tj =25°C: Ibb(off)
VIN = 0
Tj =150°C:
9)
Operating current , VIN = 5V, Tj =-40...+150°C
IGND = IGND1/2 + IGND3/4,
one channel on: IGND
four channels on:
Values
min
typ
max
Unit
---
180
160
300
300
µA
---
0.35
1.2
0.8
2.8
mA
Protection Functions10)
Initial peak short circuit current limit, (see timing
diagrams, page 12)
each channel, Tj =-40°C: IL(SCp)
5.5
9.5
13
4.5
7.5
11
Tj =25°C:
2.5
4.5
7
Tj =+150°C:
two parallel channels
twice the current of one channel
four parallel channels
four times the current of one channel
Repetitive short circuit current limit,
Tj = Tjt
each channel IL(SCr)
-4
--4
-two parallel channels
-4
-four parallel channels
A
A
(see timing diagrams, page 12)
Initial short circuit shutdown time
Tj,start =-40°C: toff(SC)
Tj,start = 25°C:
---
48
29
---
ms
--
47
--
V
150
--
-10
---
°C
K
---
-610
32
--
V
mV
-2
30
3
-4
µA
V
(see page 10 and timing diagrams on page 12)
VON(CL)
Output clamp (inductive load switch off)11)
at VON(CL) = Vbb - VOUT
Thermal overload trip temperature
Thermal hysteresis
Tjt
∆Tjt
Reverse Battery
Reverse battery voltage 12)
Drain-source diode voltage (Vout > Vbb)
IL = - 1.9 A, Tj = +150°C
Diagnostic Characteristics
Open load detection current
Open load detection voltage
-Vbb
-VON
IL(off)
Tj =-40..+150°C: VOUT(OL)
9)
Add IST, if IST > 0
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
11) If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest
VON(CL)
12) Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 3 and circuit page 8).
10)
Data Sheet
6
Rev 1.3, 2010-03-16
Smart High-Side Power Switch
BTS712N1
Parameter and Conditions, each of the four channels
Symbol
Values
min
typ
max
RI
2.5
3.5
6
kΩ
VIN(T+)
1.7
--
3.5
V
VIN(T-)
1.5
--
--
V
∆ VIN(T)
VIN = 0.4 V: IIN(off)
-1
0.5
--
-50
V
µA
VIN = 5 V: IIN(on)
20
50
90
µA
td(ST OL3)
--
220
--
µs
Status output (open drain)
Zener limit voltage Tj =-40...+150°C, IST = +1.6 mA: VST(high)
Tj =-40...+25°C, IST = +1.6 mA: VST(low)
ST low voltage
Tj = +150°C, IST = +1.6 mA:
5.4
---
6.1
---
-0.4
0.6
V
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Input and Status Feedback13)
Input resistance
(see circuit page 8)
Tj =-40..+150°C:
Input turn-on threshold voltage
Tj =-40..+150°C:
Input turn-off threshold voltage
Tj =-40..+150°C:
Input threshold hysteresis
Off state input current
Tj =-40..+150°C:
On state input current
Tj =-40..+150°C:
Delay time for status with open load
Unit
(see timing diagrams, page 12)
13)
If ground resistors RGND are used, add the voltage drop across these resistors.
Data Sheet
7
Rev 1.3, 2010-03-16
Smart High-Side Power Switch
BTS712N1
Truth Table
Channel 1 and 2
Channel 3 and 4
(equivalent to channel 1 and 2)
Chip 1
Chip 2
Normal operation
Open load
Channel 1 (3)
Channel 2 (4)
Short circuit to Vbb
Channel 1 (3)
Channel 2 (4)
Overtemperature
both channel
Channel 1 (3)
Channel 2 (4)
Undervoltage/ Overvoltage
L = "Low" Level
H = "High" Level
IN1
IN3
IN2
IN4
OUT1
OUT3
OUT2
OUT4
L
L
H
H
L
L
H
L
H
L
H
L
H
X
L
L
H
H
Z
Z
H
L
H
L
H
L
H
X
L
H
X
L
L
H
L
L
H
L
H
X
L
H
X
H
H
H
Z
Z
H
L
H
X
L
H
X
L
X
H
L
H
X
X
X
L
L
H
L
H
X
X
X
L
H
X
L
H
X
L
L
L
L
L
X
X
L
H
H
H
L
L
L
X
X
L
L
L
ST1/2
ST3/4
ST1/2
ST3/4
BTS 711L1
BTS 712N1
H
H
H
H
H
H
H
H
L
H
H
H(L14))
H
L
H(L14))
H
L
L
H
H
L15)
H
H
L15)
H
H(L16))
L15)
H
H(L16))
H
L
L
H
L
H
L
H
L15)
H
H
H
L
L
H
L
H
L
H
X = don't care
Z = high impedance, potential depends on external circuit
Status signal valid after the time delay shown in the timing diagrams
Parallel switching of channel 1 and 2 (also channel 3 and 4) is easily possible by connecting the inputs and
outputs in parallel (see truth table). If switching channel 1 to 4 in parallel, the status outputs ST1/2 and ST3/4
have to be configured as a 'Wired OR' function with a single pull-up resistor.
Terms
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Leadframe (Vbb) is connected to pin 1,10,11,12,15,16,19,20
External RGND optional; two resistors RGND1/2 ,RGND3/4 = 150 Ω or a single resistor RGND = 75 Ω for
reverse battery protection up to the max. operating voltage.
14)
With additional external pull up resistor
An external short of output to Vbb in the off state causes an internal current from output to ground. If RGND is
used, an offset voltage at the GND and ST pins will occur and the VST low signal may be errorious.
16) Low resistance to V may be detected by no-load-detection
bb
15)
Data Sheet
8
Rev 1.3, 2010-03-16
Smart High-Side Power Switch
BTS712N1
Overvoltage protection of logic part
Input circuit (ESD protection), IN1...4
GND1/2 or GND3/4
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ESD zener diodes are not to be used as voltage clamp at
DC conditions. Operation in this mode may result in a drift of
the zener voltage (increase of up to 1 V).
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Status output, ST1/2 or ST3/4
VZ1 = 6.1 V typ., VZ2 = 47 V typ., RI = 3.5 kΩ typ.,
RGND = 150 Ω
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ESD-Zener diode: 6.1 V typ., max 5.0 mA; RST(ON) < 380 Ω
at 1.6 mA, ESD zener diodes are not to be used as voltage
clamp at DC conditions. Operation in this mode may result in
a drift of the zener voltage (increase of up to 1 V).
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VOUT > 3 V typ.; IN low
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Data Sheet
9
Rev 1.3, 2010-03-16
Smart High-Side Power Switch
BTS712N1
Inductive load switch-off energy
dissipation
GND disconnect
(channel 1/2 or 3/4)
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Any kind of load. In case of IN = high is VOUT ≈ VIN - VIN(T+).
Due to VGND > 0, no VST = low signal available.
Energy stored in load inductance:
GND disconnect with GND pull up
While demagnetizing load inductance, the energy
dissipated in PROFET is
(channel 1/2 or 3/4)
2
EL = 1/2·L·I L
EAS= Ebb + EL - ER= VON(CL)·iL(t) dt,
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Maximum allowable load inductance for
a single switch off (one channel)5)
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Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND > 0, no VST = low signal available.
/ I,/Tj,start = 150°C, Vbb = 12 V, RL = 0 Ω
L [mH]
Vbb disconnect with energized inductive
load
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For an inductive load current up to the limit defined by EAS
(max. ratings see page 3 and diagram on page 9) each
switch is protected against loss of Vbb.
Consider at your PCB layout that in the case of Vbb disconnection with energized inductive load the whole load
current flows through the GND connection.
Data Sheet
IL [A]
10
Rev 1.3, 2010-03-16
Smart High-Side Power Switch
BTS712N1
Typ. ground pin operating current
Typ. on-state resistance
VIN = high (one channel on)
; IL = 1.8 A, IN = high
IGND [mA]
RON [mOhm]
Vbb [V]
Vbb [V]
Typ. standby current
Typ. initial short circuit shutdown time
; Vbb =12 V
; Vbb = 9...34 V, IN1...4 = low
Ibb(off) [µA]
t off(S C ) [ms ec ]
60
50
40
30
20
10
0
40
Tj [°C]
Ibb(off) includes four times the current IL(off) of the open
load detection current sources.
Data Sheet
11
-25
0
25
50
75
100
125
150
T j, s tart [°C]
Rev 1.3, 2010-03-16
Smart High-Side Power Switch
BTS712N1
Timing diagrams
Timing diagrams are shown for chip 1 (channel 1/2). For chip 2 (channel 3/4) the diagrams
are valid too. The channels 1 and 2, respectively 3 and 4, are symmetric and consequently
the diagrams are valid for each channel as well as for permuted channels
Figure 1a: Vbb turn on:
Figure 2b: Switching an inductive load,
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Figure 3a: Turn on into short circuit:
shut down by overtemperature, restart by cooling
Figure 2a: Switching a lamp:
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The initial peak current should be limited by the lamp and not by
the initial short circuit current IL(SCp) = 7.5 A typ. of the device.
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Heating up of the chip may require several milliseconds, depending
on external conditions (toff(SC) vs. Tj,start see page 11)
12
Rev 1.3, 2010-03-16
Smart High-Side Power Switch
BTS712N1
Figure 5a: Open load: detection in OFF-state, turn
on/off to open load
Figure 3b: Turn on into short circuit:
shut down by overtemperature, restart by cooling
(two parallel switched channels 1 and 2)
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td(ST,OL3) depends on external circuitry because of high
impedance
*) IL = 30 µA typ
Figure 4a: Overtemperature:
Reset if Tj <Tjt
Figure 6a: Undervoltage:
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Data Sheet
13
Rev 1.3, 2010-03-16
Smart High-Side Power Switch
BTS712N1
Figure 6b: Undervoltage restart of charge pump
RIIVWDWH
RQVWDWH
9
9
EEXUVW
9
9
9
EERYHU
RIIVWDWH
921&/
9 RQ
EERUVW
EEXFS
EEXQGHU
9 EE
IN = high, normal load conditions.
Charge pump starts at Vbb(ucp) = 5.6 V typ.
Figure 7a: Overvoltage:
,1
9bb
V ON(CL)
Vbb(over)
V bb(o rst)
9
287
67
W
Data Sheet
14
Rev 1.3, 2010-03-16
Smart High-Side Power Switch
BTS712N1
1.27
0.35
8˚ ma
x
7.6 -0.2 1)
+0.09
0.35 x 45˚
0.23
2.65 max
2.45 -0.2
0.2 -0.1
Package Outlines
0.4 +0.8
+0.15 2)
0.2 24x
20
0.1
10.3 ±0.3
11
GPS05094
1 12.8 1) 10
-0.2
Index Marking
1) Does not include plastic or metal protrusions of 0.15 max per side
2) Does not include dambar protrusion of 0.05 max per side
Figure 1
PG-DSO-20 (Plastic Dual Small Outline Package) (RoHS-compliant)
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pbfree finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
Please specify the package needed (e.g. green package) when placing an order
You can find all of our packages, sorts of packing and others in our
Infineon Internet Page “Products”: http://www.infineon.com/products.
Data Sheet
15
Dimensions in mm
Rev 1.3, 2010-03-16
Smart High-Side Power Switch
BTS712N1
Revision History
Version
Date
Changes
Rev 1.3
2010-03-16
page 6: changed reference to the timing diagram
Rev 1.2
2009-07-13
page 1: added new coverpage
page 6: Initial short circuit shutdown time changed:
toff(SC) -40 °C to 48 ms
toff(SC) 25 °C to 29 ms
page 11: changed graphic
V1.1
2007-08-30
Creation of the green datasheet.
First page :
Adding the green logo and the AEC qualified
Adding the bullet AEC qualified and the RoHS compliant features
Package page
Modification of the package to be green.
Data Sheet
16
Rev 1.3, 2010-03-16
Edition 2010-03-16
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 3/16/10.
All Rights Reserved.
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