BTT6200-4EMA Data Sheet (2.1 MB)

PR OFET™ + 24V
BTT6200-4EMA
Smart High-Side Power Switch
Quad Channel, 200mΩ
Data Sheet
PROFET™+ 24V
Rev. 1.0, 2014-08-20
Automotive Power
BTT6200-4EMA
Table of Contents
Table of Contents
1
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
3.1
3.2
3.3
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pin Assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Voltage and Current Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
4.1
4.2
4.3
4.3.1
4.3.2
General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
PCB set up . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
5
5.1
5.2
5.3
5.3.1
5.3.2
5.4
5.5
Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output ON-state Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Turn ON/OFF Characteristics with Resistive Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Inductive Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output Clamping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Load Inductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Inverse Current Capability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
15
15
15
16
16
16
17
19
6
6.1
6.2
6.3
6.4
6.5
6.5.1
6.5.2
6.6
Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Loss of Ground Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Undervoltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Overvoltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Polarity Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Overload Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Current Limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Temperature Limitation in the Power DMOS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics for the Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
21
21
21
22
23
23
23
23
25
7
7.1
7.2
7.3
7.3.1
7.3.2
7.3.3
7.3.3.1
7.3.3.2
7.3.3.3
7.3.4
7.3.5
7.3.6
7.4
Diagnostic Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IS Pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SENSE Signal in Different Operating Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SENSE Signal in the Nominal Current Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SENSE Signal Variation as a Function of Temperature and Load Current . . . . . . . . . . . . . . . . . . .
SENSE Signal Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SENSE Signal in Open Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Open Load in ON Diagnostic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Open Load in OFF Diagnostic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Open Load Diagnostic Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SENSE Signal in Short Circuit to VS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SENSE Signal in Case of Overload . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SENSE Signal in Case of Inverse Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics Diagnostic Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
26
26
27
27
28
29
30
30
30
31
31
32
32
33
8
8.1
8.2
Input Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Input Circuitry . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
DEN / DSEL0,1 Pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Data Sheet
PROFET™+ 24V
2
7
7
7
8
Rev. 1.0, 2014-08-20
BTT6200-4EMA
Table of Contents
8.3
8.4
Input Pin Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
9
9.1
9.2
9.3
9.4
9.5
Characterization Results . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Diagnostic Mechanism . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
10.1
Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Further Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Data Sheet
PROFET™+ 24V
3
38
38
39
41
42
43
Rev. 1.0, 2014-08-20
Smart High-Side Power Switch
1
BTT6200-4EMA
Overview
Application
•
•
•
•
Suitable for resistive, inductive and capacitive loads
Replaces electromechanical relays, fuses and discrete circuits
Most suitable for loads with high inrush current, such as lamps
Suitable for 24V Trucks and Transportation System
Basic Features
•
•
•
•
•
•
•
•
•
PG-SSOP-24-14 EP
Quad channel device
Very low stand-by current
3.3 V and 5 V compatible logic inputs
Electrostatic discharge protection (ESD)
Optimized electromagnetic compatibility
Logic ground independent from load ground
Very low power DMOS leakage current in OFF state
Green product (RoHS compliant)
AEC qualified
Description
The BTT6200-4EMA is a 200 mΩ quad channel Smart High-Side Power Switch, embedded in a PG-SSOP-24-14
EP , Exposed Pad package, providing protective functions and diagnosis. The power transistor is built by an
N-channel vertical power MOSFET with charge pump. The device is integrated in Smart6 HV technology. It is
specially designed to drive lamps up to R10W 24V or R5W 12V, as well as LEDs in the harsh automotive
environment.
Table 1
Product Summary
Parameter
Symbol
Value
Operating voltage range
VS(OP)
VS(LD)
RDS(ON)
IL(NOM)1
IL(NOM)2
kILIS
5 V ... 36 V
Maximum supply voltage
Maximum ON state resistance at TJ = 150 °C per channel
Nominal load current (one channel active)
Nominal load current (all channels active)
Typical current sense ratio
65 V
400 mΩ
1.5 A
1A
300
Type
Package
Marking
BTT6200-4EMA
PG-SSOP-24-14 EP
BTT6200-4EMA
Data Sheet
PROFET™+ 24V
4
Rev. 1.0, 2014-08-20
BTT6200-4EMA
Overview
Table 1
Product Summary (cont’d)
Parameter
Symbol
Value
Minimum current limitation
IL5(SC)
IS(OFF)
9A
Maximum standby current with load at TJ = 25 °C
500 nA
Diagnostic Functions
•
•
•
•
•
•
Proportional load current sense multiplexed for the 4 channels
Open load detection in ON and OFF
Short circuit to battery and ground indication
Overtemperature switch off detection
Stable diagnostic signal during short circuit
Enhanced kILIS dependency with temperature and load current
Protection Functions
•
•
•
•
•
•
Stable behavior during undervoltage
Reverse polarity protection with external components
Secure load turn-off during logic ground disconnection with external components
Overtemperature protection with latch
Overvoltage protection with external components
Enhanced short circuit operation
Data Sheet
PROFET™+ 24V
5
Rev. 1.0, 2014-08-20
BTT6200-4EMA
Block Diagram
2
Block Diagram
Channel 0
VS
voltage sensor
internal
power
supply
IN0
DEN
over
temperature
driver
logic
gate control
&
charge pump
ESD
protection
T
clamp for
inductive load
over current
switch limit
load current sense and
open load detection
IS
OUT 0
forward voltage drop detection
VS
Channel 1
T
IN1
Control and protection circuit equivalent to channel 0
DSEL0
DSEL1
OUT 1
Channel 2
T
Control and protection circuit equivalent to channel 0
IN2
OUT 2
Channel 3
T
Control and protection circuit equivalent to channel 0
IN3
OUT 3
GND
Figure 1
Block diagram DxS.vsd
Block Diagram for the BTT6200-4EMA
Data Sheet
PROFET™+ 24V
6
Rev. 1.0, 2014-08-20
BTT6200-4EMA
Pin Configuration
3
Pin Configuration
3.1
Pin Assignment
NC
IN0
NC
GND
IN1
DEN
IS
DSEL0
IN2
IN3
DSEL1
NC
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
OUT0
NC
NC
NC
OUT1
NC
NC
OUT2
NC
NC
NC
OUT3
PG-SSOP-24-Pinout.vsd
Figure 2
Pin Configuration
3.2
Pin Definitions and Functions
Pin
Symbol
Function
NC
1, 3, 12, 14, 15,
16, 18, 19 , 21, 22,
23
Not Connected; No internal connection to the chip
2
IN0
INput channel 0; Input signal for channel 0 activation
4
GND
GrouND; Ground connection
5
IN1
INput channel 1; Input signal for channel 1 activation
6
DEN
Diagnostic ENable; Digital signal to enable/disable the diagnosis of the device
7
IS
Sense; Sense current of the selected channel
8
DSEL0
Diagnostic SELection; Digital signal to select the channel to be diagnosed
9
IN2
INput channel 2; Input signal for channel 2 activation
10
IN3
INput channel 3; Input signal for channel 3 activation
11
DSEL1
Diagnostic SELection; Digital signal to select the channel to be diagnosed
13
OUT3
OUTput 3; Protected high side power output channel 3
Data Sheet
PROFET™+ 24V
7
Rev. 1.0, 2014-08-20
BTT6200-4EMA
Pin Configuration
Pin
Symbol
Function
17
OUT2
OUTput 2; Protected high side power output channel 2
20
OUT1
OUTput 1; Protected high side power output channel 1
24
OUT0
OUTput 0; Protected high side power output channel 0
Cooling Tab
VS
Voltage Supply; Battery voltage
3.3
Voltage and Current Definition
Figure 3 shows all terms used in this data sheet, with associated convention for positive values.
VDS0
IS
VS
VDS1
VDS2
VDS3
VOUT2
VOUT3
VS
IIN0
VIN0
IN0
IOUT0
OUT0
IIN1
IN1
VIN1
IIN2
IOUT1
IN2
VIN2
IIN3
VIN3
OUT1
IN3
IDEN
V DEN
DEN
DSEL0
IDSEL1
VDSEL 0
IOUT2
OUT2
IDSEL0
IIS
VDSEL 1
VIS
DSEL1
IOUT3
OUT3
IS
GND
IGND
VOUT0
VOUT 1
voltage and current convention.vsd
Figure 3
Voltage and Current Definition
Data Sheet
PROFET™+ 24V
8
Rev. 1.0, 2014-08-20
BTT6200-4EMA
General Product Characteristics
4
General Product Characteristics
4.1
Absolute Maximum Ratings
Table 2
Absolute Maximum Ratings 1)
TJ = -40°C to 150°C; (unless otherwise specified)
Parameter
Symbol
Values
Unit
Note /
Test Condition
Number
Min.
Typ.
Max.
-0.3
–
48
V
–
P_4.1.1
0
–
28
V
t < 2 min
TA = 25 °C
RL ≥ 47 Ω
ZGND = Diode
P_4.1.2
Supply Voltages
Supply voltage
Reverse polarity voltage
VS
-VS(REV)
+27 Ω
Supply voltage for short
circuit protection
VBAT(SC)
0
–
36
V
RSupply = 10 mΩ
LSupply = 5 µH
RECU= 20 mΩ
RCable= 16 mΩ/m
LCable= 1 µH/m,
l = 0 or 5 m
P_4.1.3
See Chapter 6
and Figure 28
–
–
65
V
2)
RI = 2 Ω
RL = 47 Ω
P_4.1.12
nRSC1
–
–
100
k
cycles
3)
P_4.1.4
VIN
-0.3
–
–
6
7
V
–
P_4.1.13
-2
–
2
mA
-0.3
–
–
6
7
V
-2
–
2
mA
-0.3
–
–
6
7
V
IDSEL
-2
–
2
mA
–
P_4.1.18
VIS
IIS
-0.3
–
VS
V
–
P_4.1.19
-25
–
50
mA
–
P_4.1.20
| IL |
–
–
IL(LIM)
A
–
P_4.1.21
Supply voltage for Load dump VS(LD)
protection
Short Circuit Capability
Permanent short circuit
IN pin toggles
_
Input Pins
Voltage at INPUT pins
Current through INPUT pins
Voltage at DEN pin
Current through DEN pin
Voltage at DSEL pin
Current through DSEL pin
IIN
VDEN
IDEN
VDSEL
t < 2 min
–
P_4.1.14
–
P_4.1.15
t < 2 min
–
P_4.1.16
–
P_4.1.17
t < 2 min
Sense Pin
Voltage at IS pin
Current through IS pin
Power Stage
Load current
Data Sheet
PROFET™+ 24V
9
Rev. 1.0, 2014-08-20
BTT6200-4EMA
General Product Characteristics
Table 2
Absolute Maximum Ratings (cont’d)1)
TJ = -40°C to 150°C; (unless otherwise specified)
Parameter
Symbol
Values
Unit
Note /
Test Condition
Number
P_4.1.22
P_4.1.23
Min.
Typ.
Max.
–
–
1.8
W
Maximum energy dissipation EAS
Single pulse (one channel)
–
–
20
mJ
TA = 85 °C
TJ < 150 °C
IL(0) = 1 A
TJ(0) = 150 °C
VS = 28 V
Voltage at power transistor
VDS
–
–
65
V
–
P_4.1.26
I GND
-20
-150
–
20
20
mA
–
P_4.1.27
TJ
TSTG
-40
–
150
°C
–
P_4.1.28
-55
–
150
°C
–
P_4.1.30
VESD
VESD
-2
–
2
kV
4)
HBM
P_4.1.31
-4
–
4
kV
4)
HBM
P_4.1.32
VESD
VESD
-500
–
500
V
5)
CDM
P_4.1.33
V
5)
CDM
P_4.1.34
Power dissipation (DC)
PTOT
Currents
Current through ground pin
t < 2 min
Temperatures
Junction temperature
Storage temperature
ESD Susceptibility
ESD susceptibility (all pins)
ESD susceptibility OUT Pin
vs. GND and VS connected
ESD susceptibility
ESD susceptibility pin
(corner pins)
-750
–
750
1) Not subject to production test. Specified by design.
2) VS(LD) is setup without the DUT connected to the generator per ISO 7637-1.
3) Threshold limit for short circuit failures: 100 ppm. Please refer to the legal disclaimer for short-circuit capability at the end
of this document.
4) ESD susceptibility HBM according to ANSI/ESDA/JEDEC JS-001.
5) “CDM” ESDA STM5.3.1 or ANSI/ESD 5.5.3.1
Notes
1. Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
2. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not
designed for continuous repetitive operation.
Data Sheet
PROFET™+ 24V
10
Rev. 1.0, 2014-08-20
BTT6200-4EMA
General Product Characteristics
4.2
Functional Range
Table 3
Functional Range TJ = -40°C to 150°C; (unless otherwise specified)
Parameter
Symbol
Nominal operating voltage
VNOM
VS(OP)
Extended operating voltage
Minimum functional supply
voltage
VS(OP)_MIN
Values
Min.
Typ.
Max.
8
28
36
5
3.8
–
48
4.3
5
Unit
Note /
Test Condition
Number
V
–
P_4.2.1
V
2)
VIN = 4.5 V
P_4.2.2
V
RL = 47 Ω
VDS < 0.5 V
1)
VIN = 4.5 V
RL = 47 Ω
From IOUT = 0 A
P_4.2.3
to
VDS < 0.5 V; see
Figure 15
Undervoltage shutdown
VS(UV)
3
3.5
4.1
V
1)
VIN = 4.5 V
VDEN = 0 V
RL = 47 Ω
From VDS < 1 V;
to IOUT = 0 A
P_4.2.4
See Chapter 9.1
and Figure 15
Undervoltage shutdown
hysteresis
VS(UV)_HYS
–
850
–
mV
2)
Operating current
One channel active
IGND_1
–
2
4
mA
P_4.2.5
VIN = 5.5 V
VDEN = 5.5 V
Device in RDS(ON)
VS = 36 V
–
P_4.2.13
See Chapter 9.1
Operating current
All channels active
IGND_4
–
6
9
mA
VIN = 5.5 V
P_4.2.6
VDEN = 5.5 V
Device in RDS(ON)
VS = 36 V
See Chapter 9.1
Standby current for whole
device with load (ambiente)
Data Sheet
PROFET™+ 24V
IS(OFF)
–
0.1
11
0.5
µA
1)
VS = 36 V
VOUT = 0 V
VIN floating
VDEN floating
TJ ≤ 85 °C
P_4.2.7
Rev. 1.0, 2014-08-20
BTT6200-4EMA
General Product Characteristics
Table 3
Functional Range (cont’d)TJ = -40°C to 150°C; (unless otherwise specified)
Parameter
Symbol
Values
Unit
Note /
Test Condition
Number
VS = 36 V
VOUT = 0 V
VIN floating
VDEN floating
TJ = 150 °C
2)
VS = 36 V
VOUT = 0 V
VIN floating
VDEN = 5.5 V
P_4.2.10
Min.
Typ.
Max.
Maximum standby current for IS(OFF)_150
whole device with load
–
–
20
µA
Standby current for whole
device with load, diagnostic
active
–
0.6
–
mA
IS(OFF_DEN)
P_4.2.8
1) Test at TJ = -40°C only
2) Not subject to production test. Specified by design.
Note: Within the functional range the IC operates as described in the circuit description. The electrical
characteristics are specified within the conditions given in the related electrical characteristics table.
4.3
Thermal Resistance
Table 4
Thermal Resistance
Parameter
Symbol
Junction to soldering point
RthJS
RthJA
Junction to ambient
All channels active
Values
Min.
Typ.
Max.
–
5
–
–
30
–
Unit
Note /
Test Condition
Number
K/W
1)
P_4.3.1
K/W
1)2)
P_4.3.2
1) Not subject to production test. Specified by design.
2) Specified Rthja value is according to JEDEC JESD51-2,-5,-7 at natural convection on FR4 2s2p board; The product (chip +
package) was simulated on a 76.4 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70µm Cu, 2 x 35 µm Cu). Where
applicable, a thermal via array under the exposed pad contacts the first inner copper layer. Please refer to Figure 4.
4.3.1
PCB set up
70µm
1.5mm
35µm
0.3mm
Figure 4
PCB 2s2p.vsd
2s2p PCB Cross Section
Data Sheet
PROFET™+ 24V
12
Rev. 1.0, 2014-08-20
BTT6200-4EMA
General Product Characteristics
PCB bottom view
PCB top view
1
1
2
2
1
1
2
2
2
2
1
COOLING
TAB
1
2
VS
2
2
2
1
1
2
2
1
1
2
2
PCB_600_SSOP24.vsd
Figure 5
PC Board Top and Bottom View for Thermal Simulation with 600 mm² Cooling Area
4.3.2
Thermal Impedance
100
Zth‐ja [K/W]
10
1
1s0p‐footprint
1s0p‐300mm²
1s0p‐600mm²
2s2p
0.1
0.0001
Figure 6
0.001
0.01
0.1
Time [s]
1
10
100
1000
Typical Thermal Impedance. 2s2p PCB set up according Figure 4
Data Sheet
PROFET™+ 24V
13
Rev. 1.0, 2014-08-20
BTT6200-4EMA
General Product Characteristics
80
75
70
Rthja [K/W]
65
60
55
50
45
1s0p
40
35
30
0
footprint
Figure 7
100
200
300
400
500
600
700
2
Area [mm ]
Typical Thermal Resistance. PCB set-up 1s0p
Data Sheet
PROFET™+ 24V
14
Rev. 1.0, 2014-08-20
BTT6200-4EMA
Power Stage
5
Power Stage
The power stages are built using an N-channel vertical power MOSFET (DMOS) with charge pump.
5.1
Output ON-state Resistance
The ON-state resistance RDS(ON) depends on the supply voltage as well as the junction temperature TJ. Figure 8
shows the dependencies in terms of temperature and supply voltage for the typical ON-state resistance. The
behavior in reverse polarity is described in Chapter 6.4.
400
320
350
300
280
260
RDS(ON) [mΩ ]
RDS(ON) [mΩ ]
300
250
240
220
200
200
180
160
150
140
100
-40
Figure 8
120
-20
0
20
40
60
80
100
Junction Temperature TJ [°C]
120
140
160
0
5
10
15
20
Supply Voltage VS [V]
25
30
35
Typical ON-state Resistance
A high signal at the input pin (see Chapter 8) causes the power DMOS to switch ON with a dedicated slope, which
is optimized in terms of EMC emission.
5.2
Turn ON/OFF Characteristics with Resistive Load
Figure 9 shows the typical timing when switching a resistive load.
IN
VIN_H
VIN_L
t
VOUT
dV/dt ON
dV/dt
t ON
90% VS
tOFF_delay
70% VS
30% VS
10% VS
OFF
tON_delay
tOFF
t
Switching times.vsd
Figure 9
Switching a Resistive Load Timing
Data Sheet
PROFET™+ 24V
15
Rev. 1.0, 2014-08-20
BTT6200-4EMA
Power Stage
5.3
Inductive Load
5.3.1
Output Clamping
When switching OFF inductive loads with high side switches, the voltage VOUT drops below ground potential,
because the inductance intends to continue driving the current. To prevent the destruction of the device by
avalanche due to high voltages, there is a voltage clamp mechanism ZDS(AZ) implemented that limits negative
output voltage to a certain level (VS - VDS(AZ)). Please refer to Figure 10 and Figure 11 for details. Nevertheless,
the maximum allowed load inductance is limited.
VS
ZDS(AZ)
VDS
INx
LOGIC
IL
VBAT
GND
VIN
OUTx
L, RL
VOUT
ZGND
Output clamp.vsd
Figure 10
Output Clamp
IN
t
V OUT
VS
t
V S-VDS(AZ)
IL
t
Switching an inductance.vsd
Figure 11
Switching an Inductive Load Timing
5.3.2
Maximum Load Inductance
During demagnetization of inductive loads, energy has to be dissipated in the BTT6200-4EMA. This energy can
be calculated with following equation:
V S – V DS ( AZ )
RL × IL ⎞
L
E = V DS ( AZ ) × ------ × -------------------------------× ln ⎛ 1 – -------------------------------+I
⎝
RL
V S – V DS ( AZ )⎠ L
RL
Data Sheet
PROFET™+ 24V
16
(1)
Rev. 1.0, 2014-08-20
BTT6200-4EMA
Power Stage
Following equation simplifies under the assumption of RL = 0 Ω.
VS
2
1
⎞
E = --- × L × I × ⎛⎝ 1 – -------------------------------2
V S – V DS ( AZ )⎠
(2)
The energy, which is converted into heat, is limited by the thermal design of the component. See Figure 12 for the
maximum allowed energy dissipation as a function of the load current.
EAS (mJ)
100
10
1
0
0.5
1
1.5
2
2.5
3
IL(A)
Figure 12
Maximum Energy Dissipation Single Pulse, TJ_START = 150 °C; VS = 28V
5.4
Inverse Current Capability
In case of inverse current, meaning a voltage VINV at the OUTput higher than the supply voltage VS, a current IINV
will flow from output to VS pin via the body diode of the power transistor (please refer to Figure 13). The output
stage follows the state of the IN pin, except if the IN pin goes from OFF to ON during inverse. In that particular
case, the output stage is kept OFF until the inverse current disappears. Nevertheless, the current IINV should not
be higher than IL(INV). If the channel is OFF, the diagnostic will detect an open load at OFF. If the affected channel
is ON, the diagnostic will detect open load at ON (the overtemperature signal is inhibited). At the appearance of
VINV, a parasitic diagnostic can be observed. After, the diagnosis is valid and reflects the output state. At VINV
vanishing, the diagnosis is valid and reflects the output state. During inverse current, no protection functions are
available.
Data Sheet
PROFET™+ 24V
17
Rev. 1.0, 2014-08-20
BTT6200-4EMA
Power Stage
VBAT
VS
Gate driver
IL(INV)
OL
comp.
Device
logic
INV
Comp.
VINV
OUT
GND
IS
ZGND
inverse current.vsd
Figure 13
Inverse Current Circuitry
Data Sheet
PROFET™+ 24V
18
Rev. 1.0, 2014-08-20
BTT6200-4EMA
Power Stage
5.5
Electrical Characteristics Power Stage
Table 5
Electrical Characteristics: Power Stage
VS = 8 V to 36 V, TJ = -40°C to 150°C (unless otherwise specified).
Typical values are given at VS = 28 V, TJ = 25 °C
Parameter
ON-state resistance per
channel
Symbol
RDS(ON)_150
Values
Min.
Typ.
Max.
300
360
400
Unit
Note /
Test Condition
Number
mΩ
IL = IL4 = 1 A
VIN = 4.5 V
TJ = 150 °C
P_5.5.1
TJ = 25 °C
P_5.5.21
TA = 85 °C
P_5.5.2
See Figure 8
ON-state resistance per
channel
RDS(ON)_25
–
200
–
mΩ
1)
Nominal load current
One channel active
IL(NOM)1
–
1.5
–
A
1)
Nominal load current
All channels active
IL(NOM)2
–
1
–
A
Output voltage drop limitation VDS(NL)
at small load currents
–
10
22
mV
IL = IL0 = 25 mA
See Chapter 9.3
P_5.5.4
Drain to source clamping
voltage
VDS(AZ) = [VS - VOUT]
VDS(AZ)
65
70
75
V
IDS = 5 mA
See Figure 11
See Chapter 9.1
P_5.5.5
Output leakage current per
channel TJ ≤ 85 °C
IL(OFF)
–
0.1
0.5
µA
2)
P_5.5.6
Output leakage current per
channel TJ = 150 °C
IL(OFF)_150
–
1
5
µA
Inverse current capability
IL(INV)
–
1
–
A
TJ < 150 °C
P_5.5.3
VIN floating
VOUT = 0 V
TJ ≤ 85 °C
VIN floating
VOUT = 0 V
TJ = 150 °C
1)
VS < VOUTX
P_5.5.8
P_5.5.9
See Figure 13
Slew rate
30% to 70% VS
dV/dtON
0.3
0.8
1.3
V/µs
RL = 47 Ω
VS = 28 V
P_5.5.11
Slew rate
70% to 30% VS
-dV/dtOFF
0.3
0.8
1.3
V/µs
See Figure 9
See Chapter 9.1
P_5.5.12
Slew rate matching
dV/dtON - dV/dtOFF
∆dV/dt
-0.15
0
0.15
V/µs
P_5.5.13
20
70
150
µs
P_5.5.14
20
70
150
µs
P_5.5.15
-50
0
50
µs
P_5.5.16
–
35
70
µs
P_5.5.17
–
35
70
µs
P_5.5.18
Turn-ON time to VOUT = 90% tON
VS
Turn-OFF time to VOUT = 10% tOFF
VS
Turn-ON / OFF matching
∆tSW
tOFF - tON
Turn-ON time to VOUT = 10% tON_delay
VS
Turn-OFF time to VOUT = 90% tOFF_delay
VS
Data Sheet
PROFET™+ 24V
19
Rev. 1.0, 2014-08-20
BTT6200-4EMA
Power Stage
Table 5
Electrical Characteristics: Power Stage (cont’d)
VS = 8 V to 36 V, TJ = -40°C to 150°C (unless otherwise specified).
Typical values are given at VS = 28 V, TJ = 25 °C
Parameter
Switch ON energy
Symbol
EON
Values
Min.
Typ.
Max.
–
190
–
Unit
Note /
Test Condition
Number
µJ
1)
P_5.5.19
RL = 47 Ω
VOUT = 90% VS
VS = 36 V
See Chapter 9.1
Switch OFF energy
EOFF
–
210
–
µJ
1)
RL = 47 Ω
VOUT = 10% VS
VS = 36 V
P_5.5.20
See Chapter 9.1
1) Not subject to production test, specified by design.
2) Test at TJ = -40°C only
Data Sheet
PROFET™+ 24V
20
Rev. 1.0, 2014-08-20
BTT6200-4EMA
Protection Functions
6
Protection Functions
The device provides integrated protection functions. These functions are designed to prevent the destruction of
the IC from fault conditions described in the data sheet. Fault conditions are considered as “outside” normal
operating range. Protection functions are designed for neither continuous nor repetitive operation.
6.1
Loss of Ground Protection
In case of loss of the module ground and the load remains connected to ground, the device protects itself by
automatically turning OFF (when it was previously ON) or remains OFF, regardless of the voltage applied on IN
pins.
In case of loss of device ground, it’s recommended to use input resistors between the microcontroller and the
BTT6200-4EMA to ensure switching OFF of channels.
In case of loss of module or device ground, a current (IOUT(GND)) can flow out of the DMOS. Figure 14 sketches
the situation.
ZGND is recommended to be a resistor in series to a diode .
ZIS(AZ)
VS
ZD(AZ)
IS
RSENSE
VBAT
ZDS(AZ)
DSEL0
R DSEL
DSEL1
R DSEL
DEN
R DEN
LOGIC
INx
R IN
IOUT(GND)
OUTx
ZDESD
GND
RIS
IS
ZGND
Loss of ground protection
.vsd
Figure 14
Loss of Ground Protection with External Components
6.2
Undervoltage Protection
Between VS(UV) and VS(OP), the undervoltage mechanism is triggered. VS(OP) represents the minimum voltage
where the switching ON and OFF can takes place. VS(UV) represents the minimum voltage the switch can hold ON.
If the supply voltage is below the undervoltage mechanism VS(UV), the device is OFF (turns OFF). As soon as the
supply voltage is above the undervoltage mechanism VS(OP), then the device can be switched ON. When the switch
is ON, protection functions are operational. Nevertheless, the diagnosis is not guaranteed until VS is in the VNOM
range. Figure 15 sketches the undervoltage mechanism.
Data Sheet
PROFET™+ 24V
21
Rev. 1.0, 2014-08-20
BTT6200-4EMA
Protection Functions
VOUT
undervoltage behavior
.vsd
VS(UV)
Figure 15
Undervoltage Behavior
6.3
Overvoltage Protection
VS(OP)
VS
There is an integrated clamp mechanism for overvoltage protection (ZD(AZ)). To guarantee this mechanism
operates properly in the application, the current in the Zener diode has to be limited by a ground resistor. Figure 16
shows a typical application to withstand overvoltage issues. In case of supply voltage higher than VS(AZ), the power
transistor switches ON and in addition the voltage across the logic section is clamped. As a result, the internal
ground potential rises to VS - VS(AZ). Due to the ESD Zener diodes, the potential at pin INx, DSELx, and DEN rises
almost to that potential, depending on the impedance of the connected circuitry. In the case the device was ON,
prior to overvoltage, the BTT6200-4EMA remains ON. In the case the BTT6200-4EMA was OFF, prior to
overvoltage, the power transistor can be activated. In the case the supply voltage is in above VBAT(SC) and below
VDS(AZ), the output transistor is still operational and follows the input. If at least one channel is in the ON state,
parameters are no longer guaranteed and lifetime is reduced compared to the nominal supply voltage range. This
especially impacts the short circuit robustness, as well as the maximum energy EAS capability. ZGND is
recommended to be a resistor in series to a diode.
ISOV
ZIS(AZ)
VS
ZD(AZ)
IS
RSENSE
VBAT
ZDS(AZ)
DSEL0
R DSEL
DSEL1
R DSEL
DEN
R DEN
LOGIC
INx
R IN
OUTx
ZDESD
GND
R IS
ZGND
Overvoltage protection.vsd
Figure 16
Overvoltage Protection with External Components
Data Sheet
PROFET™+ 24V
22
Rev. 1.0, 2014-08-20
BTT6200-4EMA
Protection Functions
6.4
Reverse Polarity Protection
In case of reverse polarity, the intrinsic body diodes of the power DMOS causes power dissipation. The current in
this intrinsic body diode is limited by the load itself. Additionally, the current into the ground path and the logic pins
has to be limited to the maximum current described in Chapter 4.1 with an external resistor. Figure 17 shows a
typical application. RGND resistor is used to limit the current in the Zener protection of the device. Resistors RDSEL,
RDEN, and RIN are used to limit the current in the logic of the device and in the ESD protection stage. RSENSE is used
to limit the current in the sense transistor which behaves as a diode. The recommended value for RDEN = RDSEL =
RIN = RSENSE = 10 kΩ. It is recommended to use a resistor in series to a diode in the ground path.
During reverse polarity, no protection functions are available.
Micro controller
protection diodes
Z IS(AZ)
VS
ZD(AZ)
IS
RSENSE
ZDS(AZ)
VDS(REV)
DSEL0
RDSEL0
DSEL1
RDSEL1
DEN
R DEN
LOGIC
INx
R IN
-V S(REV)
IN0
OUTx
ZDESD
GND
IS
R GND
R IS
D
Reverse Polarity.vsd
Figure 17
Reverse Polarity Protection with External Components
6.5
Overload Protection
In case of overload, such as high inrush of cold lamp filament, or short circuit to ground, the BTT6200-4EMA offers
several protection mechanisms.
6.5.1
Current Limitation
At first step, the instantaneous power in the switch is maintained at a safe value by limiting the current to the
maximum current allowed in the switch IL(SC). During this time, the DMOS temperature is increasing, which affects
the current flowing in the DMOS.
6.5.2
Temperature Limitation in the Power DMOS
Each channel incorporates both an absolute (TJ(SC)) and a dynamic (TJ(SW)) temperature sensor. Activation of
either sensor will cause an overheated channel to switch OFF to prevent destruction. Any protective switch OFF
latches the output until the temperature has reached an acceptable value. Figure 18 gives a sketch of the
situation.
No retry strategy is implemented such that when the DMOS temperature has cooled down enough, the switch is
switched ON again. Only the IN pin signal toggling can re-activate the power stage (latch behavior).
Data Sheet
PROFET™+ 24V
23
Rev. 1.0, 2014-08-20
BTT6200-4EMA
Protection Functions
IN
t
IL
LOAD CURRENT LIMITATION PHASE
IL(x)SC
LOAD CURRENT BELOW
LIMITATION PHASE
IL(NOM)
t
TDMOS
TJ(SC)
Temperature
protection phase
ΔTJ(SW)
TA
tsIS(FAULT)
t
tsIS(OC_blank)
IIS
IIS(FAULT)
IL(NOM) / kILIS
0A
VDEN
t
tsIS(OFF)
0V
t
Hard start.vsd
Figure 18
Overload Protection
Note: For better understanding, the time scale is not linear. The real timing of this drawing is application dependant
and cannot be described.
Data Sheet
PROFET™+ 24V
24
Rev. 1.0, 2014-08-20
BTT6200-4EMA
Protection Functions
6.6
Electrical Characteristics for the Protection Functions
Table 6
Electrical Characteristics: Protection
VS = 8 V to 36 V, TJ = -40°C to 150°C (unless otherwise specified).
Typical values are given at VS = 28 V, TJ = 25 °C
Parameter
Symbol
Values
Unit
Note /
Test Condition
Number
Min.
Typ.
Max.
–
0.1
–
mA
1)2)
VS = 28 V
See Figure 14
P_6.6.1
VDS(REV)
200
650
700
mV
3)
IL = - 1 A
See Figure 17
P_6.6.2
VS(AZ)
65
70
75
V
ISOV = 5 mA
P_6.6.3
Loss of Ground
Output leakage current while IOUT(GND)
GND disconnected
Reverse Polarity
Drain source diode voltage
during reverse polarity
Overvoltage
Overvoltage protection
See Figure 16
Overload Condition
Load current limitation
IL5(SC)
9
11
14
A
4)
VDS = 5 V
See Figure 18 and
Chapter 9.3
P_6.6.4
Dynamic temperature
increase while switching
ΔTJ(SW)
–
80
–
K
5)
See Figure 18
P_6.6.8
Thermal shutdown
temperature
TJ(SC)
150
1705)
2005)
°C
3)
See Figure 18
P_6.6.10
30
–
K
2)
Thermal shutdown hysteresis ΔTJ(SC)
–
1) All pins are disconnected except VS and OUT.
2)
3)
4)
5)
P_6.6.11
Not Subject to production test, specified by design
Test at TJ = +150°C only
Test at TJ = -40°C only
Functional test only
Data Sheet
PROFET™+ 24V
25
Rev. 1.0, 2014-08-20
BTT6200-4EMA
Diagnostic Functions
7
Diagnostic Functions
For diagnosis purpose, the BTT6200-4EMA provides a combination of digital and analog signals at pin IS. These
signals are called SENSE. In case the diagnostic is disabled via DEN, pin IS becomes high impedance. In case
DEN is activated, the sense current of the channel X is enabled/disabled via associated pins DSEL0 and DSEL1.
Table 7 gives the truth table.
Table 7
Diagnostic Truth Table
DEN
DSEL1
DSEL0
IS
0
don’t care
don’t care
Z
Z
Z
Z
1
0
0
IIS0
0
0
0
1
0
1
0
IIS1
0
0
1
1
0
0
0
IIS2
0
1
1
1
0
0
0
IIS3
7.1
IS Pin
The BTT6200-4EMA provides a sense signal called IIS at pin IS. As long as no “hard” failure mode occurs (short
circuit to GND / current limitation / overtemperature / excessive dynamic temperature increase or open load at
OFF) a proportional signal to the load current (ratio kILIS = IL / IIS) is provided. The complete IS pin and diagnostic
mechanism is described on Figure 19. The accuracy of the sense current depends on temperature and load
current. The sense pin multiplexes the currents IIS(0), IIS(1), IIS(2) and IIS(3) via the pins DSEL0 and DSEL1. Thanks
to this multiplexing, the matching between kILISCHANNEL0, kILISCHANNEL1, kILISCHANNEL2 and kILISCHANNEL3 is optimized.
Due to the ESD protection, in connection to VS, it is not recommended to share the IS pin with other devices if
these devices are using another battery feed. The consequence is that the unsupplied device would be fed via the
IS pin of the supplied device.
VS
I IS0 =
I L0 / k ILIS
IIS(FAULT)
IIS1 =
IL1 / kILIS
I IS2 =
I L2 / kILIS
IIS 3 =
IL3 / kILIS
ZIS(AZ)
0
0
IS
0
FAULT
1
1
1
0
DEN
1
FAULT
DSEL1
DSEL0
Figure 19
Sense schematic.vsd
Diagnostic Block Diagram
Data Sheet
PROFET™+ 24V
26
Rev. 1.0, 2014-08-20
BTT6200-4EMA
Diagnostic Functions
7.2
SENSE Signal in Different Operating Modes
Table 8 gives a quick reference for the state of the IS pin during device operation.
Table 8
Sense Signal, Function of Operation Mode
Operation Mode
Input level Channel X
DEN1)
Normal operation
OFF
H
Output Level Diagnostic Output
Z
Z
Short circuit to GND
~ GND
Z
Overtemperature
Z
Z
Short circuit to VS
IIS(FAULT)
Current limitation
VS
< VOL(OFF)
> VOL(OFF)2)
~ VINV
~ VS
< VS
Short circuit to GND
~ GND
Overtemperature TJ(SW)
event
Z
IIS(FAULT)
IIS(FAULT)
IIS = IL / kILIS
IIS(FAULT)
IIS(FAULT)
IIS(FAULT)
Short circuit to VS
VS
~ VS3)
~ VINV
~ VS5)
IIS < IL / kILIS
IIS < IIS(OL)
IIS < IIS(OL)4)
IIS(OL) < IIS < IL / kILIS
Don’t care
Z
Open Load
Inverse current
Normal operation
ON
Open Load
Inverse current
Underload
Don’t care
1)
2)
3)
4)
5)
Don’t care
L
Z
The table doesn’t indicate but it is assumed that the appropriate channel is selected via the DSEL pins.
Stable with additional pull-up resistor.
The output current has to be smaller than IL(OL).
After maximum tINV.
The output current has to be higher than IL(OL).
7.3
SENSE Signal in the Nominal Current Range
Figure 20 shows the current sense as a function of the load current in the power DMOS. Usually, a pull-down
resistor RIS is connected to the current sense IS pin. This resistor has to be higher than 560 Ω to limit the power
losses in the sense circuitry. A typical value is 1.2 kΩ. The blue curve represents the ideal sense current, assuming
an ideal kILIS factor value. The red curves shows the accuracy the device provides across full temperature range
at a defined current.
Data Sheet
PROFET™+ 24V
27
Rev. 1.0, 2014-08-20
BTT6200-4EMA
Diagnostic Functions
6
5
IIS [mA]
4
3
2
1
min/max Sense Current
typical Sense Current
0
0
0.5
1
IL [A]
1.5
BTT6200-4EMA
Figure 20
Current Sense for Nominal Load
7.3.1
SENSE Signal Variation as a Function of Temperature and Load Current
In some applications a better accuracy is required at smaller currents. To achieve this accuracy requirement, a
calibration on the application is possible. To avoid multiple calibration points at different load and temperature
conditions, the BTT6200-4EMA allows limited derating of the kILIS value, at a given point (IL3; TJ = +25 °C). This
derating is described by the parameter ∆kILIS. Figure 21 shows the behavior of the sense current, assuming one
calibration point at nominal load at +25 °C.
The blue line indicates the ideal kILIS ratio.
The green lines indicate the derating on the parameter across temperature and voltage, assuming one calibration
point at nominal temperature and nominal battery voltage.
The red lines indicate the kILIS accuracy without calibration.
Data Sheet
PROFET™+ 24V
28
Rev. 1.0, 2014-08-20
BTT6200-4EMA
Diagnostic Functions
500
calibrated k ILIS
min/max k ILIS
typical k ILIS
450
400
k ILIS
350
300
250
200
150
0
0.5
1
1.5
IL [A]
BTT6200-4EMA
Figure 21
Improved Current Sense Accuracy with One Calibration Point at 0.2A
7.3.2
SENSE Signal Timing
Figure 22 shows the timing during settling and disabling of the SENSE.
VINx
t
ILx
tONx
tOFFx
tONx
90% of
IL static
t
VDEN
IIS
tsIS(LC)
tsIS(ON)
90% of
IIS static
tsIS(OFF)
t
tsIS(chC)
tsIS(ON_DEN)
t
VDSEL
t
VINy
t
ILy
tONy
t
current sense settling disabling time .vsd
Figure 22
Current Sense Settling / Disabling Timing
Data Sheet
PROFET™+ 24V
29
Rev. 1.0, 2014-08-20
BTT6200-4EMA
Diagnostic Functions
7.3.3
SENSE Signal in Open Load
7.3.3.1
Open Load in ON Diagnostic
If the channel is ON, a leakage current can still flow through an open load, for example due to humidity. The
parameter IL(OL) gives the threshold of recognition for this leakage current. If the current IL flowing out the power
DMOS is below this value, the device recognizes a failure, if the DEN (and DSEL) is selected. In that case, the
SENSE current is below IIS(OL). Otherwise, the minimum SENSE current is given above parameter IIS(OL).
Figure 23 shows the SENSE current behavior in this area. The red curve shows a typical product curve. The blue
curve shows the ideal current sense.
I IS
IIS(OL)
IL
IL(OL)
Sense for OL .vsd
Figure 23
Current Sense Ratio for Low Currents
7.3.3.2
Open Load in OFF Diagnostic
For open load diagnosis in OFF-state, an external output pull-up resistor (ROL) is recommended. For the
calculation of pull-up resistor value, the leakage currents and the open load threshold voltage VOL(OFF) have to be
taken into account. Figure 24 gives a sketch of the situation. Ileakage defines the leakage current in the complete
system, including IL(OFF) (see Chapter 5.5) and external leakages, e.g, due to humidity, corrosion, etc... in the
application.
To reduce the stand-by current of the system, an open load resistor switch SOL is recommended. If the channel x
is OFF, the output is no longer pulled down by the load and VOUT voltage rises to nearly VS. This is recognized by
the device as an open load. The voltage threshold is given by VOL(OFF). In that case, the SENSE signal is switched
to the IIS(FAULT).
An additional RPD resistor can be used to pull VOUT to 0V. Otherwise, the OUT pin is floating. This resistor can be
used as well for short circuit to battery detection, see Chapter 7.3.4.
Data Sheet
PROFET™+ 24V
30
Rev. 1.0, 2014-08-20
BTT6200-4EMA
Diagnostic Functions
Vbat
SOL
VS
R OL
IIS(FAULT)
OL
comp.
OUT
IS
ILOFF
Ileakage
GND
Rleakage
VOL(OFF)
R PD
RIS
ZGND
Open Load in OFF.vsd
Figure 24
Open Load Detection in OFF Electrical Equivalent Circuit
7.3.3.3
Open Load Diagnostic Timing
Figure 25 shows the timing during either Open Load in ON or OFF condition when the DEN pin is HIGH. Please
note that a delay tsIS(FAULT_OL_OFF) has to be respected after the falling edge of the input, when applying an open
load in OFF diagnosis request, otherwise the diagnosis can be wrong.
Load is present
Open load
VIN
VOUT
t
VS-V OL(OFF)
RDS(ON) x IL
shutdown with load
t
IOUT
IIS
tsIS(FAULT_OL_ON_OFF)
t
tsIS(LC)
Error Settling Disabling Time.vsd
Figure 25
Sense Signal in Open Load Timing
7.3.4
SENSE Signal in Short Circuit to VS
t
In case of a short circuit between the OUTput-pin and the VS pin, all or portion (depending on the short circuit
impedance) of the load current will flow through the short circuit. As a result, a lower current compared to the
normal operation will flow through the DMOS of the BTT6200-4EMA, which can be recognized at the current sense
signal. The open load at OFF detection circuitry can also be used to distinguish a short circuit to VS. In that case,
an external resistor to ground RSC_VS is required. Figure 26 gives a sketch of the situation.
Data Sheet
PROFET™+ 24V
31
Rev. 1.0, 2014-08-20
BTT6200-4EMA
Diagnostic Functions
Vbat
VS
IIS(FAULT)
VBAT
OL
comp.
IS
OUT
V OL(OFF)
GND
RIS
IS
ZGND
RSC_VS
Short circuit to Vs.vsd
Figure 26
Short Circuit to Battery Detection in OFF Electrical Equivalent Circuit
7.3.5
SENSE Signal in Case of Overload
An overload condition is defined by a current flowing out of the DMOS reaching the current limitation and / or the
absolute dynamic temperature swing TJ(SW) is reached, and / or the junction temperature reaches the thermal
shutdown temperature TJ(SC). Please refer to Chapter 6.5 for details.
In that case, the SENSE signal given is by IIS(FAULT) when the diagnostic is selected.
The device has a thermal latch behavior, such that when the overtemperature or the exceed dynamic temperature
condition has disappeared, the DMOS is reactivated only when the IN is toggled LOW to HIGH. If the DEN pin is
activated, and DSEL pin is selected to the correct channel, the SENSE follows the output stage. If no reset of the
latch occurs, the device remains in the latching phase and IIS(FAULT) at the IS pin, eventhough the DMOS is OFF.
7.3.6
SENSE Signal in Case of Inverse Current
In the case of inverse current, the sense signal of the affected channel will indicate open load in OFF state and
indicate open load in ON state. The unaffected channels indicate normal behavior as long as the IINV current is not
exceeding the maximum value specified in Chapter 5.4.
Data Sheet
PROFET™+ 24V
32
Rev. 1.0, 2014-08-20
BTT6200-4EMA
Diagnostic Functions
7.4
Electrical Characteristics Diagnostic Function
Table 9
Electrical Characteristics: Diagnostics
VS = 8 V to 36 V, TJ = -40°C to 150°C (unless otherwise specified).
Typical values are given at VS = 28 V, TJ = 25 °C
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit Note /
Test Condition
–
6
V
Number
Load Condition Threshold for Diagnostic
Open load detection
threshold in OFF state
VS - VOL(OFF) 4
1)
VIN = 0 V
VDEN = 4.5 V
P_7.5.1
See Figure 25
Open load detection
threshold in ON state
IL(OL)
5
–
15
mA
VIN = VDEN = 4.5 V
IIS(OL) = 33 μA
P_7.5.2
See Figure 23
See Chapter 9.4
Sense Pin
IS pin leakage current when
sense is disabled
IIS_(DIS)
Sense signal saturation
voltage
VS - VIS
–
1
0.02
–
1
3.5
µA
V
(RANGE)
1)
VIN = 4.5 V
P_7.5.4
VDEN = 0 V
IL = IL4 = 1 A
VIN = 0 V
VOUT = VS > 10 V
VDEN = 4.5 V
IIS = 6 mA
P_7.5.6
See Chapter 9.4
Sense signal maximum
current in fault condition
IIS(FAULT)
6
15
35
mA
VIS = VIN = VDSEL = 0 V P_7.5.7
VOUT = VS > 10 V
VDEN = 4.5 V
See Figure 19
See Chapter 9.4
Sense pin maximum voltage
VIS(AZ)
65
70
75
V
VS to IS
IIS = 5 mA
P_7.5.3
See Figure 19
Current Sense Ratio Signal in the Nominal Area, Stable Load Current Condition
VIN = 4.5 V
VDEN = 4.5 V
P_7.5.8
See Figure 20
P_7.5.9
Current sense ratio
IL0 = 10 mA
kILIS0
-50%
330
+50%
Current sense ratio
IL1 = 0.05 A
kILIS1
-40%
300
+40%
Current sense ratio
kILIS2
-15%
300
+15%
P_7.5.10
kILIS3
-11%
300
+11%
P_7.5.11
-9%
300
+9%
P_7.5.12
-8
0
+8
TJ = -40 °C; 150 °C
IL2 = 0.2 A
Current sense ratio
IL3 = 0.5 A
Current sense ratio
kILIS4
IL4 = 1 A
kILIS derating with current and ∆kILIS
temperature
%
2)
kILIS3 versus kILIS2
See Figure 21
P_7.5.17
Diagnostic Timing in Normal Condition
Data Sheet
PROFET™+ 24V
33
Rev. 1.0, 2014-08-20
BTT6200-4EMA
Diagnostic Functions
Table 9
Electrical Characteristics: Diagnostics (cont’d)
VS = 8 V to 36 V, TJ = -40°C to 150°C (unless otherwise specified).
Typical values are given at VS = 28 V, TJ = 25 °C
Parameter
Symbol
Min.
Typ.
Max.
Unit Note /
Test Condition
Current sense settling time to tsIS(ON)
kILIS function stable after
positive input slope on both
INput and DEN
–
–
150
µs
2)
VDEN = VIN= 0 to
4.5 V
VS = 28 V
RIS = 1.2 kΩ
CSENSE < 100 pF
IL = IL3 = 0.5 A
See Figure 22
P_7.5.18
Current sense settling time
with load current stable and
transition of the DEN
–
–
10
µs
1)
P_7.5.19
µs
1)
tsIS(ON_DEN)
Values
VIN = 4.5 V
VDEN = 0 to 4.5 V
RIS = 1.2 kΩ
CSENSE < 100 pF
IL = IL3 = 0.5 A
Number
See Figure 22
Current sense settling time to tsIS(LC)
–
–
15
IIS stable after positive input
slope on current load
VIN = 4.5 V
VDEN = 4.5 V
RIS = 1.2 kΩ
CSENSE < 100 pF
IL = IL2 = 0.2 A to IL =
IL3 = 0.5 A
P_7.5.20
See Figure 22
Diagnostic Timing in Open Load Condition
Current sense settling time to tsIS(FAULT_OL_ –
IIS stable for open load
OFF)
detection in OFF state
–
50
µs
Current sense settling time to tsIS(FAULT_OL_ –
150
–
µs
IIS stable for open load
ON_OFF)
detection in ON-OFF
transition
1)
VIN = 0V
VDEN = 0 to 4.5 V
RIS = 1.2 kΩ
CSENSE < 100 pF
VOUT = VS = 28 V
2)
VIN = 4.5 to 0V
VDEN = 4.5 V
RIS = 1.2 kΩ
CSENSE < 100 pF
VOUT = VS = 28 V
P_7.5.22
P_7.5.23
See Figure 25
Diagnostic Timing in Overload Condition
1) 3) 4)
Current sense settling time to tsIS(FAULT)
IIS stable for overload
detection
–
–
150
µs
VIN= VDEN = 0 to P_7.5.24
4.5 V
RIS = 1.2 kΩ
CSENSE < 100 pF
VDS = 5 V
See Figure 18
Current sense over current
blanking time
–
350
–
µs
2)
tsIS(OC_blank)
VIN = VDEN = 4.5 V
RIS = 1.2 kΩ
CSENSE < 100 pF
VDS = 5 V to 0 V
P_7.5.32
See Figure 18
Data Sheet
PROFET™+ 24V
34
Rev. 1.0, 2014-08-20
BTT6200-4EMA
Diagnostic Functions
Table 9
Electrical Characteristics: Diagnostics (cont’d)
VS = 8 V to 36 V, TJ = -40°C to 150°C (unless otherwise specified).
Typical values are given at VS = 28 V, TJ = 25 °C
Parameter
Diagnostic disable time
DEN transition to
IIS < 50% IL /kILIS
Symbol
tsIS(OFF)
Values
Min.
Typ.
Max.
Unit Note /
Test Condition
–
–
20
µs
1)
VIN = 4.5 V
VDEN = 4.5 V to 0 V
RIS = 1.2 kΩ
CSENSE < 100 pF
IL = IL3 = 0.5 A
Number
P_7.5.25
See Figure 22
Current sense settling time
from one channel to another
tsIS(ChC)
–
–
20
µs
VIN0 = VIN1 = 4.5 V
VDEN = 4.5 V
VDSEL = 0 to 4.5 V
RIS = 1.2 kΩ
CSENSE < 100 pF
IL(OUT0) = IL3 = 0.5 A
IL(OUT1) = IL2 = 0.2 A
P_7.5.26
See Figure 22
1)
2)
3)
4)
DSEL pin select channel 0 only.
Not subject to production test, specified by design
Test at TJ = -40°C only
Functional Test only
Data Sheet
PROFET™+ 24V
35
Rev. 1.0, 2014-08-20
BTT6200-4EMA
Input Pins
8
Input Pins
8.1
Input Circuitry
The input circuitry is compatible with 3.3 and 5 V microcontrollers. The concept of the input pin is to react to voltage
thresholds. An implemented Schmitt trigger avoids any undefined state if the voltage on the input pin is slowly
increasing or decreasing. The output is either OFF or ON but cannot be in a linear or undefined state. The input
circuitry is compatible with PWM applications. Figure 27 shows the electrical equivalent input circuitry. In case the
pin is not needed, it must be left opened, or must be connected to device ground (and not module ground) via an
10kΩ input resistor.
IN
GND
Figure 27
Input Pin Circuitry
8.2
DEN / DSEL0,1 Pin
Input circuitry .vsd
The DEN / DSEL0,1 pins enable and disable the diagnostic functionality of the device. The pins have the same
structure as the INput pins, please refer to Figure 27.
8.3
Input Pin Voltage
The IN, DSEL and DEN use a comparator with hysteresis. The switching ON / OFF takes place in a defined region,
set by the thresholds VIN(L) Max. and VIN(H) Min. The exact value where the ON and OFF take place are unknown
and depends on the process, as well as the temperature. To avoid cross talk and parasitic turn ON and OFF, a
hysteresis is implemented. This ensures a certain immunity to noise.
Data Sheet
PROFET™+ 24V
36
Rev. 1.0, 2014-08-20
BTT6200-4EMA
Input Pins
8.4
Electrical Characteristics
Table 10
Electrical Characteristics: Input Pins
VS = 8 V to 36 V, TJ = -40°C to 150°C (unless otherwise specified).
Typical values are given at VS = 28 V, TJ = 25 °C
Parameter
Symbol
Values
Min.
Typ.
Unit
Max.
Note /
Test Condition
Number
INput Pins Characteristics
Low level input voltage range VIN(L)
-0.3
–
0.8
V
See Chapter 9.5
P_8.4.1
High level input voltage range VIN(H)
2
–
6
V
See Chapter 9.5
P_8.4.2
P_8.4.3
Input voltage hysteresis
VIN(HYS)
–
250
–
mV
1)
Low level input current
IIN(L)
IIN(H)
1
10
25
µA
2
10
25
µA
VIN = 0.8 V
VIN = 5.5 V
See Chapter 9.5
High level input current
P_8.4.4
P_8.4.5
See Chapter 9.5
DEN Pin
Low level input voltage range VDEN(L)
-0.3
–
0.8
V
–
P_8.4.6
High level input voltage range VDEN(H)
2
–
6
V
–
P_8.4.7
P_8.4.8
P_8.4.9
Input voltage hysteresis
Low level input current
High level input current
VDEN(HYS)
IDEN(L)
IDEN(H)
–
250
–
mV
1)
1
10
25
µA
2
10
25
µA
VDEN = 0.8V
VDEN = 5.5 V
P_8.4.10
DSEL Pins
Low level input voltage range VDSEL(L)
-0.3
–
0.8
V
–
P_8.4.11
High level input voltage range VDSEL(H)
2
–
6
V
–
P_8.4.12
Input voltage hysteresis
–
250
–
mV
1)
P_8.4.13
1
10
25
µA
P_8.4.14
2
10
25
µA
VDSEL = 0.8V
VDSEL = 5.5 V
Low level input current
High level input current
VDSEL(HYS)
IDSEL(L)
IDSEL(H)
P_8.4.15
1) Not subject to production test, specified by design
Data Sheet
PROFET™+ 24V
37
Rev. 1.0, 2014-08-20
BTT6200-4EMA
Characterization Results
9
Characterization Results
The characterization have been performed on 3 lots, with 3 devices each. Characterization have been performed
at 8 V, 28 V and 36 V over temperature range.
9.1
General Product Characteristics
P_4.2.4
5.000
4.000
4.900
3.900
4.800
3.800
4.700
3.700
4.600
3.600
[V]
[V]
P_4.2.3
4.500
4.400
3.500
3.400
4.300
3.300
8V
4.200
8V
3.200
28V
28V
36V
36V
4.100
3.100
4.000
3.000
‐50
‐25
0
25
50
75
100
125
150
‐50
‐25
0
25
Temperature [°C]
50
75
100
125
150
Temperature [°C]
Minimum Functional Supply Voltage
VS(OP)_MIN = f(TJ)
Undervoltage Threshold VS(UV) = f(TJ)
P_4.2.6
P_4.2.7, P_4.2.10
7.000
4.000
3.500
6.000
3.000
5.000
2.500
[µA]
[mA]
4.000
2.000
3.000
1.500
2.000
1.000
8V
1.000
8V
0.500
28V
28V
36V
36V
0.000
0.000
‐50
‐25
0
25
50
75
100
125
150
‐50
Temperature [°C]
‐25
0
25
50
75
100
125
150
Temperature [°C]
Current Consumption for Whole Device with Load. Standby Current for Whole Device with Load.
All Channels Active IGND_2 = f(TJ;VS)
IS(OFF) = f(TJ;VS)
Data Sheet
PROFET™+ 24V
38
Rev. 1.0, 2014-08-20
BTT6200-4EMA
Characterization Results
9.2
Power Stage
P_5.5.5
12.000
75.000
11.500
74.000
11.000
73.000
10.500
72.000
10.000
71.000
[V]
[mV]
P_5.5.4
9.500
70.000
9.000
69.000
8.500
68.000
8.000
67.000
8V
28V
7.500
8V
28V
66.000
36V
36V
7.000
65.000
‐50
‐25
0
25
50
75
100
125
150
‐50
‐25
0
25
50
75
100
125
150
Temperature [°C]
Temperature [°C]
Output Voltage Drop Limitation at Low Load Current Drain to Source Clamp Voltage VDS(AZ) = f(TJ)
VDS(NL) = f(TJ) and VDS(NL) = f(VS)
1.000
1.000
0.900
0.900
0.800
0.800
0.700
0.700
0.600
0.600
[V/µs]
P_5.5.12
[V/µs]
P_5.5.11
0.500
0.500
0.400
0.400
0.300
0.300
0.200
0.200
8V
28V
0.100
8V
28V
0.100
36V
36V
0.000
0.000
‐50
‐25
0
25
50
75
100
125
150
‐50
Temperature [°C]
Slew Rate at Turn ON
dV/dtON = f(TJ;VS), RL = 47 Ω
Data Sheet
PROFET™+ 24V
‐25
0
25
50
75
100
125
150
Temperature [°C]
Slew Rate at Turn OFF
- dV/dtOFF = f(TJ;VS), RL = 47 Ω
39
Rev. 1.0, 2014-08-20
BTT6200-4EMA
Characterization Results
P_5.5.14
P_5.5.15
80.000
90.000
70.000
80.000
70.000
60.000
60.000
50.000
[µs]
[ms]
50.000
40.000
40.000
30.000
30.000
20.000
20.000
8V
10.000
8V
28V
28V
10.000
36V
36V
0.000
0.000
‐50
‐25
0
25
50
75
100
125
150
‐50
‐25
0
25
Temperature [°C]
50
75
100
125
150
Temperature [°C]
Turn ON TON = f(TJ;VS), RL = 47 Ω
Turn OFF TOFF = f(TJ;VS), RL = 47 Ω
P_5.5.19
P_5.5.20
2.50E‐04
3.00E‐04
2.50E‐04
2.00E‐04
2.00E‐04
[µJ]
[µJ]
1.50E‐04
1.50E‐04
1.00E‐04
1.00E‐04
5.00E‐05
5.00E‐05
8V
8V
28V
28V
36V
36V
0.00E+00
0.00E+00
‐50
‐25
0
25
50
75
100
125
150
‐50
Temperature [°C]
Switch ON Energy EON = f(TJ;VS), RL = 47 Ω
Data Sheet
PROFET™+ 24V
‐25
0
25
50
75
100
125
150
Temperature [°C]
Switch OFF Energy EOFF = f(TJ;VS), RL = 47 Ω
40
Rev. 1.0, 2014-08-20
BTT6200-4EMA
Characterization Results
9.3
Protection Functions
P_6.6.4
12.000
10.000
[A]
8.000
6.000
4.000
2.000
8V
28V
36V
0.000
‐50
‐25
0
25
50
75
100
125
150
Temperature [°C]
Overload Condition in the Low Voltage Area
IL5(SC) = f(TJ;VS);
Data Sheet
PROFET™+ 24V
41
Rev. 1.0, 2014-08-20
BTT6200-4EMA
Characterization Results
9.4
Diagnostic Mechanism
P_7.5.2
1.400
11.000
1.200
10.500
10.000
0.800
9.500
[mA]
[µA]
1.000
0.600
9.000
8.500
0.400
8.000
8V
0.200
8V
28V
7.500
36V
28V
36V
0.000
‐50
‐25
0
25
50
75
100
125
7.000
150
‐50
Temperature [°C]
‐25
0
25
50
75
100
125
150
Temperature [°C]
Open Load Detection ON State Threshold
IL(OL) = f(TJ;VS)
P_7.5.3
P_7.5.7
75.000
20.000
74.000
18.000
73.000
16.000
72.000
14.000
71.000
12.000
[mA]
[V]
Current Sense at no Load
IIS = f(TJ;VS), IL = 0
70.000
10.000
69.000
8.000
68.000
6.000
67.000
4.000
8V
28V
66.000
8V
28V
2.000
36V
36V
65.000
0.000
‐50
‐25
0
25
50
75
100
125
150
‐50
Temperature [°C]
Sense Signal Maximum Voltage
VIS(AZ) = f(TJ;VS)
Data Sheet
PROFET™+ 24V
‐25
0
25
50
75
100
125
150
Temperature [°C]
Sense Signal Maximum Current in Fault Condition
IIS(FAULT) = f(TJ;VS)
42
Rev. 1.0, 2014-08-20
BTT6200-4EMA
Characterization Results
9.5
Input Pins
P_8.4.1
P_8.4.2
1.340
1.530
1.320
1.520
1.300
1.510
1.280
1.260
1.500
[V]
[V]
1.240
1.490
1.220
1.480
1.200
1.180
1.470
1.160
8V
8V
1.460
28V
1.140
28V
36V
36V
1.120
1.450
‐50
‐25
0
25
50
75
100
125
150
‐50
‐25
0
25
Temperature [°C]
50
75
100
125
150
Temperature [°C]
Input Voltage Threshold
Input Voltage Threshold
VVIN(L)= f(TJ;VS)
VVIN(H)= f(TJ;VS)
P_8.4.3
P_8.4.5
350.000
16.000
14.000
300.000
12.000
250.000
10.000
[µA]
[mV]
200.000
8.000
150.000
6.000
100.000
4.000
8V
8V
50.000
2.000
28V
28V
36V
36V
0.000
0.000
‐50
‐25
0
25
50
75
100
125
150
‐50
Temperature [°C]
Input Voltage Hysteresis
VIN(HYS) = f(TJ;VS)
Data Sheet
PROFET™+ 24V
‐25
0
25
50
75
100
125
150
Temperature [°C]
Input Current High Level
IIN(H) = f(TJ;VS)
43
Rev. 1.0, 2014-08-20
BTT6200-4EMA
Application Information
10
Application Information
Note: The following information is given as a hint for the implementation of the device only and shall not be
regarded as a description or warranty of a certain functionality, condition or quality of the device.
VBAT
Voltage Regulator
OUT
VS
GND
T1
Z
CVS
R OL
VS
VDD
I/O
I/O
OUT0
DSEL0
R DSEL
Relay
86
30
85
87
OUT1
DSEL1
R DSEL
C OUT
R PD
I/O
DEN
R DEN
COUT
RPD
Micro I/O
controller
I/O
R IN
IN0
R IN
IN1
+
OUT2
R IN
IN2
I/O
R IN
IN3
OUT3
IS
R SENSE
CSENSE
GND
COUT
R5W
LED
R IS
GND
OUT4
RPD
A/D
E.C.U.
R LED
I/O
C OUT
R PD
OUT3
R GND
D
Application example.emf
Figure 28
Application Diagram with BTT6200-4EMA
Note: This is a very simplified example of an application circuit. The function must be verified in the real application.
Table 11
Bill of Material
Reference
Value
Purpose
RIN
10 kΩ
Protection of the microcontroller during overvoltage, reverse polarity
Guarantee BTT6200-4EMA channels OFF during loss of ground
RDSEL
RDEN
RPD
10 kΩ
Protection of the microcontroller during overvoltage, reverse polarity
10 kΩ
Protection of the microcontroller during overvoltage, reverse polarity
47 kΩ
Polarization of the output for short circuit to VS detection
Improve BTT6200-4EMA immunity to electomagnetic noise
ROL
RIS
1.5 kΩ
Polarization of the output during open load in OFF detection
1.2 kΩ
Sense resistor
Data Sheet
PROFET™+ 24V
44
Rev. 1.0, 2014-08-20
BTT6200-4EMA
Application Information
Table 11
Bill of Material (cont’d)
Reference
Value
Purpose
RSENSE
10 kΩ
Overvoltage, reverse polarity, loss of ground. Value to be tuned with micro
controller specification.
CSENSE
COUT
RLED
RGND
100 pF
Sense signal filtering.
10nF
Protection of the device during ESD and BCI
680 Ω
Overvoltage protection of the LED. Value to be tuned with LED specification.
27 Ω
Protection of the BTT6200-4EMA during overvoltage
D
BAS21
Protection of the BTT6200-4EMA during reverse polarity
Z
58 V Zener
diode
Protection of the device during overvoltage
CVS
T1
100 nF
Filtering of voltage spikes at the battery line
10.1
Further Application Information
•
•
•
Dual NPN/PNP Switch the battery voltage for open load in OFF diagnostic
Please contact us to get the pin FMEA
Existing App. Notes
For further information you may visit http://www.infineon.com/profet
Data Sheet
PROFET™+ 24V
45
Rev. 1.0, 2014-08-20
BTT6200-4EMA
Package Outlines
11
Package Outlines
Figure 29
PG-SSOP-24-14 EP (Plastic Dual Small Outline Package) (RoHS-Compliant)
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e
Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
Data Sheet
PROFET™+ 24V
46
Rev. 1.0, 2014-08-20
BTT6200-4EMA
Revision History
12
Revision History
Revision
Date
Changes
1.0
2014-08-20
Creation of the document
Data Sheet
PROFET™+ 24V
47
Rev. 1.0, 2014-08-20
Edition 2014-08-20
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Legal Disclaimer for short-circuit capability
Infineon disclaims any warranties and liabilities, whether expressed nor implied, for any short-circuit failures below
the threshold limit.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
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