External ESD Protection of LIN transceiver old 134 DownloadLink 4004

Application Note TH808x
External ESD protection
Application Hints for external ESD protection of
TH808x
1. Scope
This application note supplements the ESD part of the TH8080 and TH8082 datasheet.
The used ESD test method describes the ESD severity level for handling and packaging of
the IC itself. The result of this test method can correlate with the behaviour on module
level, but in general the test conditions, pulse forms and rise times and the energy of the
applied pulses are much different.
By using external ESD protection the TH808x will be more robust against electrostatic
discharges. Fig.1 shows the improvement of the ESD protection level of TH808x by using
different external discrete elements.
15 KV
14 KV
13 KV
12 KV
11 KV
10 KV
9 KV
8 KV
applicable
7 KV
6 KV
5 KV
applicable
4 KV
3 KV
2 KV
1 KV
applicable
0 KV
without ESD protection
ESD protection with
varistor
ESD protection with Peak
Power Zener Transient
Voltage Suppressors
diode
Figure 1 - ESD protection level for TH808x by using different protection elements
Author: MMT
390110808001
Page 1 of 6
Nov 2005
Rev 002
Application Note TH808x
External ESD protection
2. Description of the ESD test according to DIN 61000-4-2
The used ESD method is described in DIN61000-4-2. This method is also part of the LIN
EMC conformance test defined by the LIN Consortium.
The following test equipment was used for the test:
ESD simulator
Discharge module
Oscilloscope
Function generator
EM Test ESD 30C
P 30C (150pF/ 330Ω, 150pF/2000Ω or 330pF/2000Ω)
Tektronix TDS 544A
HAMEG HM8130
Fig.2 and Fig.3 shows the block diagram of the ESD test set-up and the used PCB.
Figure 2 - Block diagram of the ESD test setup
Figure 3 - ESD test board TH808x
Author: MMT
390110808001
Page 2 of 6
Nov 2005
Rev 002
Application Note TH808x
External ESD protection
3. Test of different external discrete protection elements
3.1 ESD protection with varistor and series resistor
Varistor:
Bus capacitor:
Serial resistor:
TDK AVR-M1608C270MBABB with 15pF internal capacity
180 pF
10 Ohm
Figure 4 - Schematic of the ESD protection with varistor
With the above circuitry the damage limit is 9...15kV.
The guarantied ESD protection level with this circuitry is 8kV.
ESD- Measurement: LIN- Bus, I/V characteristics
Transceiver:
TH8082 KDC 0352
Pin:
LIN to GND
Bus capacitor:
180pF / 10 Ohm plus Varistor
Pin Current [mA]
1,2
1,0
0,8
0,6
0,4
0,2
0,0
-0,2
-0,4
-0,6
-0,8
-1,0
-1,2
-40
-30
-20
-10
0
10
20
30
Before test
# 3 @ +6kV
# 3 @ -6kV
# 3 @ +7kV
# 3 @ -7kV
# 3 @ +8kV
# 3 @ -8kV
# 3 @ +10kV
# 3 @ -10kV
# 3 @ +12kV
40
50
60
Pin Voltage [V]
Figure 5 - Result of ESD test with varistor
Author: MMT
390110808001
Page 3 of 6
Nov 2005
Rev 002
Application Note TH808x
External ESD protection
3.2 ESD protection with bach-to-back zener diode and series resistor
Back-to-back zener diode:
MMB27VCLT1 (ON-Semiconductor)
with 30pF internal capacity
10 Ohm
180 pF
Series resistor:
Bus capacitor:
Figure 6 - Circuitry of the ESD protection with back-to-back zener diode
With the above circuitry the damage limit is >15kV.
The guarantied ESD protection level with this circuitry is 15kV.
ESD- Measurement: LIN- Bus, I/V characteristics
Transceiver:
TH8082 KDC 0352
Pin:
LIN to GND
Bus capacitor:
Pin Current [mA]
1,2
1,0
0,8
0,6
0,4
0,2
0,0
-0,2
-0,4
-0,6
-0,8
-1,0
-1,2
-40
-30
180pF / 10 Ohm plus Peak Power Zener Transient Voltage Suppressors diode
-20
-10
0
10
20
30
Before test
# 3 @ +6kV
# 3 @ -6kV
# 3 @ +8kV
# 3 @ -8kV
# 3 @ +12kV
# 3 @ -12kV
# 3 @ +15kV
# 3 @ -15kV
40
50
60
Pin Voltage [V]
Figure 7 - Result of ESD test with back-to-back zener diode
Author: MMT
390110808001
Page 4 of 6
Nov 2005
Rev 002
Application Note TH808x
External ESD protection
4. Summary of ESD Test
To archive different ESD protection levels of the TH808x it can be used different external
circuitries.
For protection level up to 8kV it is recommended to use a varistor TDK AVRM1608C270MBABB together with 180pF Bus capacitor and 10Ω series resistor
between both.
For higher ESD protection levels up to 15kV the varistor must be replaced by a back-toback zener diode ON-Semiconductor MMB27VCLT1 or a similar device.
Some Vehicle manufacturer doesn’t allow the using of a 10 Ohm resistor. In this case it is
also possible to replace it by a SMD ferrite, for instance a 1000Ω@100MHz type.
ESD value
Result without
additional protection
Result with varistor
Result with back-to-back
zener diode
+2KV
+3kV
+4KV
+6kV
+8kV
+9kV
+12kV
+15kV
Pass
Pass
Fail
Pass
Pass
Pass
Pass
Pass
Pass
Fail
Pass
Pass
Pass
Pass
Pass
Pass
Pass
Pass
-2KV
-3kV
-4KV
-6kV
-8kV
-9kV
-12kV
-15kV
Pass
Pass
Fail
Pass
Pass
Pass
Pass
Pass
Pass
Fail
Pass
Pass
Pass
Pass
Pass
Pass
Pass
Pass
Table 1 - Summary of ESD test
In order to confirm the results and to check the influence of the external protection circuitry
on the EMC behaviour (DPI and emission) it was done verification by IBEE, please see
EMC Test report Nr. 01-05-05 & 02-05-05.
External protection devices can decrease the EMC performance due to additional
resonances, clamping and demodulation effects! Both devices show an excellent EMC
behaviour with the recommended circuitry.
Author: MMT
390110808001
Page 5 of 6
Nov 2005
Rev 002
Application Note TH808x
External ESD protection
Disclaimer
Devices sold by Melexis are covered by the warranty and patent indemnification provisions
appearing in its Term of Sale. Melexis makes no warranty, express, statutory, implied, or by
description regarding the information set forth herein or regarding the freedom of the described
devices from patent infringement. Melexis reserves the right to change specifications and prices at
any time and without notice. Therefore, prior to designing this product into a system, it is necessary
to check with Melexis for current information. This product is intended for use in normal commercial
applications. Applications requiring extended temperature range, unusual environmental
requirements, or high reliability applications, such as military, medical life-support or life-sustaining
equipment are specifically not recommended without additional processing by Melexis for each
application.
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Author: MMT
390110808001
Page 6 of 6
Nov 2005
Rev 002