ds32068

DXTP03200BP5
ADVANCE INFORMATION
200V PNP HIGH VOLTAGE TRANSISTOR
PowerDI5
Features
Mechanical Data

BVCEO = -200V

Case: PowerDI®5

IC = -2A High Continuous Collector Current


ICM = -5A Peak Collector Current
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0

PD up to 3.2W

Moisture Sensitivity: Level 1 per J-STD-020

43% smaller than SOT223; 60% smaller than TO252 (DPAK)


Maximum height just 1.1mm
Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208



Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability

Weight: 0.093 grams (Approximate)
Application



DC – DC Conversion
Telecoms
Power Management
C
C
B
E
Top View
Bottom View
B
E
Device Schematic
Pin-Out Diagram
Reel size (inches)
13
Tape width (mm)
16
Ordering Information (Note 4)
Product
DXTP03200BP5-13
Notes:
Compliance
AEC-Q101
Marking
DTP3200B
Quantity per reel
5,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
DTP3200B
YYWWK
DTP3200B = Product Type Marking Code
= Manufacturers’ Code Marking
K = Factory Designator
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 09 for 2009)
WW = Week Code (01 to 53)
PowerDI is a registered trademark of Diodes Incorporated
DXTP03200BP5
Document number: DS32068 Rev. 3 - 2
1 of 7
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December 2015
© Diodes Incorporated
DXTP03200BP5
ADVANCE INFORMATION
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Base Current
Peak Pulse Current
Symbol
VCBO
VCEO
VEBO
IC
IB
ICM
Value
-220
-200
-7
-2
-1
-5
Unit
V
V
V
A
A
A
Value
3.2
39
1.7
75
0.74
169
5.6
-55 to +150
Unit
W
°C/W
W
°C/W
W
°C/W
°C/W
°C
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient Air (Note 5)
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient Air (Note 6)
Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient Air (Note 7)
Thermal Resistance, Junction to Lead (Note 8)
Operating and Storage Temperature Range
Symbol
PD
RJA
PD
RJA
PD
RJA
RJL
TJ, TSTG
ESD Ratings (Note 9)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
5. Device mounted on FR-4 PCB, single sided 2 oz. copper, collector pad dimensions 50mm x 50mm.
6. Device mounted on FR-4 PCB, single sided 1 oz. copper, collector pad dimensions 25mm x 25mm.
7. Device mounted on FR-4 PCB, single sided 1 oz. copper, minimum recommended pad layout.
8 Thermal resistance from junction to solder-point (on the exposed collector pad).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
DXTP03200BP5
Document number: DS32068 Rev. 3 - 2
2 of 7
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December 2015
© Diodes Incorporated
DXTP03200BP5
3.5
Max Power Dissipation (W)
-IC Collector Current (A)
10
1
VCE(sat)
100m
Limited
DC
1s
100ms
10ms
1ms
10m
100µs
Single Pulse. T amb=25°C
1oz 25mm x 25mm FR4
1m
100m
1
10
100
-VCE Collector-Emitter Voltage (V)
3.0
2.5
2oz 50mm x 50mm
2.0
1oz 25mm x 25mm
1.5
1oz min copper
1.0
0.5
0.0
0
25
50
75
100
125
150
175
Temperature (°C)
Safe Operating Area
Derating Curve
70
1oz 25mm x 25mm FR4
60
50
D=0.5
40
30
20
D=0.2
Single Pulse
10
0
100µ
D=0.05
D=0.1
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Max Power Dissipation (W)
Thermal Resistance (°C/W)
80
Single Pulse. T amb=25°C
100
1
100µ
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Power Dissipation
T (amb)=25°C
T (amb)=25°C
Power Rating (W)
160
140
1 oz. weight Copper
120
100
80
60
20
10
1m
4
180
40
1oz 25mm x 25mm FR4
10
Transient Thermal Impedance
Thermal Resistance (°C/W)
ADVANCE INFORMATION
Thermal Characteristics and Derating Information
2 oz. weight Copper
100
1000
10000
3
2 oz. weight Copper
2
1
1 oz. weight Copper
0
10
100
Copper Area (sq mm)
Thermal Resistance vs. Cu Area
DXTP03200BP5
Document number: DS32068 Rev. 3 - 2
1000
10000
Copper Area (sq mm)
Power Rating vs. Cu Area
3 of 7
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December 2015
© Diodes Incorporated
DXTP03200BP5
ADVANCE INFORMATION
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 10)
Emitter-Base Breakdown Voltage
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
Min
-220
-200
-7
Collector Cutoff Current
ICBO

Emitter Cutoff Current
IEBO







Collector-Emitter Saturation Voltage (Note 10)
VCE(sat)
Base-Emitter Saturation Voltage (Note 10)
Base-Emitter Turn-On Voltage (Note 10)
VBE(sat)
VBE(on)
Typ
-245
-225
-8.4
<1

<1
Max



-50
-0.5
-10
Unit
V
V
V
nA
µA
nA
-37
-130
-135
-180
-50
-155
-160
-275
mV
-955
-860
-1,100
-1,000
mV
mV
hFE
100
100
20

195
170
50
5

300



Transition Frequency
fT

105

MHz
Output Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
Cobo
td
tr
ts
tf





31
21
18
680
75





pF
ns
ns
ns
ns
DC Current Gain (Note 10)
Note:
Test Condition
IC = -100µA
IC = -10mA
IE = -100µA
VCB = -200V
VCB = -200V, TA = +100°C
VEB = -6V
IC = -0.1A, IB = -10mA
IC = -0.5A, IB = -25mA
IC = -1A, IB = -100mA
IC = -2A, IB = -400mA
IC = -2A, IB = -400mA
VCE = -5V, IC = -2A
VCE = -5V, IC = -10mA
VCE = -5V, IC = -1A
VCE = -5V, IC = -2A
VCE = -5V, IC = -5A
VCE = -10V, IC = -100mA,
f = 50MHz
VCB = -10V, f = 1MHz
VCC = -50V, IC = -1A,
IB1 = -IB2 = -100mA
10. Pulse Test: Pulse width 300µs. Duty cycle 2.0%.
DXTP03200BP5
Document number: DS32068 Rev. 3 - 2
4 of 7
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December 2015
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DXTP03200BP5
1
0.4
Tamb=25°C
IC/IB=10
100m
0.3
- VCE(sat) (V)
- VCE(sat) (V)
IC/IB=20
IC/IB=10
0.2
150°C
100°C
0.1
IC/IB=5
10m
1m
10m
100m
1
100m
VCE(sat) v IC
VCE=5V
1.0
-55°C
IC/IB=5
150°C
25°C
300
250
100°C
- VBE(sat) (V)
Typical Gain (hFE)
1
- IC Collector Current (A)
VCE(sat) v IC
350
25°C
-55°C
0.0
10m
- IC Collector Current (A)
200
150
25°C
100
50
0.8
0.6
150°C
0.4
100°C
-55°C
0
1m
10m
100m
0.2
1m
1
10m
100m
1
- IC Collector Current (A)
- IC Collector Current (A)
hFE v IC
VBE(sat) v IC
700
VCE=5V
-55°C
0.8
0.6
150°C
0.4
100°C
0.2
1m
10m
100m
1
500
400
300
Cibo
200
100
0
10m
100m
1
10
100
Capacitance v Voltage
VBE(on) v IC
Document number: DS32068 Rev. 3 - 2
Cobo
- Voltage(V)
- IC Collector Current (A)
DXTP03200BP5
f = 1MHz
600
25°C
Capacitance (pF)
1.0
- VBE(on) (V)
ADVANCE INFORMATION
Typical Characteristics
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DXTP03200BP5
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
E1
A1
ADVANCE INFORMATION
E1/2
e
®
1°
POWERDI 5
Dim
Min
Max
Typ
A
1.05 1.15
1.10
A1
0.00 0.05
-A2
0.33 0.43 0.381
b1
0.80 0.99
0.89
b2
1.70 1.88
1.78
D
3.90 4.05 3.966
D2
--3.054
E
6.40 6.60 6.504
e
--1.84
E1
5.30 5.45
5.37
E2
--3.549
L
0.75 0.95
0.85
L1
0.50 0.65
0.57
W
1.10 1.41 1.255
All Dimensions in mm
10
°±
b2 D
2X b1
E/2
A
5°
E
±1
°
A2
°±
10
1°
5°
±
1°
E2
L1
L1
W
D2
L
L
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X1
Dimensions
C
G
X
X1
Y
Y1
Y1
G
Value (in mm)
1.840
0.852
1.390
3.360
1.400
4.860
Y
X
C
Note:
For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between
device Terminals and PCB tracking.
DXTP03200BP5
Document number: DS32068 Rev. 3 - 2
6 of 7
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December 2015
© Diodes Incorporated
DXTP03200BP5
IMPORTANT NOTICE
ADVANCE INFORMATION
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
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DXTP03200BP5
Document number: DS32068 Rev. 3 - 2
7 of 7
www.diodes.com
December 2015
© Diodes Incorporated
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