ds32038

DST3904DJ
NEW PRODUCT
40V DUAL NPN SURFACE MOUNT TRANSISTOR
Features
Mechanical Data
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•
•
•
•
•
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VCEO = 40V
IC = 200mA
Epitaxial Planar Die Construction
Ideally Suited for Automated Assembly Processes
Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)
“Green” Device (Note 2)
Ultra Small Package
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•
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Case: SOT-963
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.0027 grams (approximate)
SOT-963
Top View
Device Schematic
Ordering Information
Device
DST3904DJ-7
Notes:
Packaging
SOT-963
Shipping
10,000/Tape & Reel
1. No purposefully added lead. Halogen and Antimony Free.
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
Marking Information
T8
DST3904DJ
Document number: DS32038 Rev. 2 - 2
T8 = Product Type Marking Code
1 of 6
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April 2010
© Diodes Incorporated
DST3904DJ
@TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 3)
Symbol
VCBO
VCEO
VEBO
IC
Value
60
40
6.0
200
Unit
V
V
V
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient (Note 3)
Operating and Storage Temperature Range
Notes:
Symbol
PD
RθJA
TJ, TSTG
Value
300
417
-55 to +150
Unit
mW
°C/W
°C
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
r(t), TRANSIENT THERMAL RESISTANCE
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
RθJA(t) = r(t) * RθJA
RθJA = 370°C/W
D = 0.9
D = 0.05
P(pk)
D = 0.02
0.01
t1
t2
T J - T A = P * RθJA(t)
Duty Cycle, D = t 1/t2
D = 0.01
D = 0.005
D = Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (s)
Fig. 1 Transient Thermal Response
10
100
1,000
0.4
1,000
Single Pulse
PD, POWER DISSIPATION (W)
P(pk), PEAK TRANSIENT POWER (W)
NEW PRODUCT
Maximum Ratings
RθJA(t) = r(t) * RθJA
RθJA = 370°C/W
100
TJ - TA = P * RθJA(t)
Duty Cycle, D = t 1/t2
10
1
0.3
Note 3
0.2
0.1
0
0.1
0.00001
0.001
0.1
10
1,000
t1, PULSE DURATION TIME (s)
Fig. 2 Single Pulse Maximum Power Dissipation
DST3904DJ
Document number: DS32038 Rev. 2 - 2
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0
20
40
60
80 100 120 140 160
TA, AMBIENT TEMPERATURE (°C)
Fig. 3 Power Dissipation vs. Ambient Temperature
April 2010
© Diodes Incorporated
DST3904DJ
@TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 4)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 4)
Symbol
Min
Max
Unit
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICEX
IBL
60
40
6.0
⎯
⎯
⎯
⎯
⎯
50
50
V
V
V
nA
nA
hFE
40
70
100
60
30
⎯
⎯
300
⎯
⎯
Collector-Emitter Saturation Voltage
VCE(SAT)
⎯
0.20
0.30
V
Base-Emitter Saturation Voltage
VBE(SAT)
0.65
⎯
0.85
0.95
V
Cobo
Cibo
hie
hre
hfe
hoe
⎯
⎯
1.0
0.5
100
1.0
4.0
8.5
10
8.0
400
40
pF
pF
kΩ
-4
x 10
⎯
μS
Current Gain-Bandwidth Product
fT
300
⎯
MHz
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
td
tr
ts
tf
⎯
⎯
⎯
⎯
35
35
200
50
ns
ns
ns
ns
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
⎯
Test Condition
IC = 10μA, IE = 0
IC = 1.0mA, IB = 0
IE = 10μA, IC = 0
VCE = 30V, VEB(OFF) = 3.0V
VCE = 30V, VEB(OFF) = 3.0V
IC = 100µA, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 50mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
VCB = 5.0V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
VCE = 20V, IC = 10mA,
f = 100MHz
VCC = 3.0V, IC = 10mA,
VBE(off) = - 0.5V, IB1 = 1.0mA
VCC = 3.0V, IC = 10mA,
IB1 = IB2 = 1.0mA
4. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤2%
Notes:
0.14
400
IB = 2mA
0.12
IB = 1.6mA
IB = 1.8mA
VCE = 5V
T A = 150°C
IB = 1.4mA
IB = 1.2mA
0.10
hFE, DC CURRENT GAIN
IC, COLLECTOR CURRENT (A)
NEW PRODUCT
Electrical Characteristics
IB = 1mA
0.08
IB = 0.8mA
IB = 0.6mA
0.06
IB = 0.4mA
0.04
300
T A = 125°C
TA = 85°C
200
100
T A = 25°C
TA = -55°C
IB = 0.2mA
0.02
0
0
1
2
3
4
5
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
DST3904DJ
Document number: DS32038 Rev. 2 - 2
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0
0.1
1
10
100
1,000
IC, COLLECTOR CURRENT (mA)
Fig. 5 Typical DC Current Gain vs. Collector Current
April 2010
© Diodes Incorporated
DST3904DJ
1
1
IC/IB = 20
VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
0.1
TA = 150°C
TA = 125°C
TA = 85°C
T A = 25°C
TA = -55°C
TA = 125°C
0.1
T A = 85°C
T A = -55°C
0.01
0.1
1.1
1.2
1.0
VCE = 5V
0.9
TA = -55°C
0.8
0.7
TA = 25°C
0.6
TA = 150°C
0.5
TA = 125°C
0.4
0.3
0.1
TA = 85°C
1
10
100
1,000
IC, COLLECTOR CURRENT (mA)
Fig. 8 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
TA = 25°C
1
10
100
1,000
IC, COLLECTOR CURRENT (mA)
Fig. 7 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)
VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V)
T A = 150°C
0.01
0.1
1
10
100
1,000
IC, COLLECTOR CURRENT (mA)
Fig. 6 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
Gain = 10
1.0
0.8
0.6
TA = -55°C
TA = 25°C
TA = 150°C
0.4
0.2
0.1
TA = 125°C
T A = 85°C
1
10
100
1,000
IC, COLLECTOR CURRENT (mA)
Fig. 9 Typical Base-Emitter Saturation Voltage
vs. Collector Current
10
TA = 25°C Single,
Non-Repetitive Pulse
IC, COLLECTOR CURRENT (A)
NEW PRODUCT
IC/IB = 10
1
PW = 1ms
DC
0.1
PW = 100µs
PW = 100ms
PW = 10ms
0.01
0.001
0.1
1
10
100
VCE, COLLECTOR EMITTER CURRENT (V)
Fig. 10 Safe Operation Area (NPN)
DST3904DJ
Document number: DS32038 Rev. 2 - 2
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April 2010
© Diodes Incorporated
DST3904DJ
Package Outline Dimensions
D
e1
NEW PRODUCT
L
E
E1
e
b (6 places)
c
A
SOT-963
Dim Min
Max Typ
A
0.40
0.50 0.45
A1
0
0.05
C
0.120 0.180 0.150
D
0.95
1.05 1.00
E
0.95
1.05 1.00
E1
0.75
0.85 0.80
L
0.05
0.15 0.10
b
0.10
0.20 0.15
e
0.35 Typ
e1
0.70 Typ
All Dimensions in mm
A1
Suggest Pad Layout
C
C
Dimensions Value (in mm)
C
0.350
X
0.200
Y
0.200
Y1
1.100
Y1
Y (6X)
X (6X)
DST3904DJ
Document number: DS32038 Rev. 2 - 2
5 of 6
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April 2010
© Diodes Incorporated
DST3904DJ
NEW PRODUCT
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause
the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2010, Diodes Incorporated
www.diodes.com
DST3904DJ
Document number: DS32038 Rev. 2 - 2
6 of 6
www.diodes.com
April 2010
© Diodes Incorporated
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