ds32044

DST3946DPJ
40V COMPLEMENTARY NPN/PNP SMALL SIGNAL TRANSISTOR IN SOT963
Features
Mechanical Data

BVCEO > 40V

Case: SOT963

IC = 200mA Collector Current

Case Material: Molded Plastic “Green” Molding Compound;

SOT963 Ultra Small Package of 1mm2 Footprint

Epitaxial Planar Die Construction

Moisture Sensitivity: Level 1 per J-STD-020

Ideally Suited for Automated Assembly Processes

Terminals: Finish  Matte Tin Plated Leads;

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)


Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
UL Flammability Classification Rating 94V-0
Solderable per MIL-STD-202, Method 208 e3

Weight: 0.0027 grams (Approximate)
SOT963
6
5
Q2
Q1
1
4
2
3
Top View
Device Schematic
and Pin-Out
Top View
Ordering Information (Note 4)
Product
DST3946DPJ-7
DST3946DPJ-7B
Notes:
Marking
T7
T7
Reel Size (inches)
7
7
Tape Width (mm)
8
8
Quantity per Reel
10,000
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/ quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
T7
DST3946DPJ
Document number: DS32044 Rev. 3 - 2
T7 = Product Type Marking Code
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DST3946DPJ
Absolute Maximum Ratings - NPN (Q1) (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VCBO
VCEO
VEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Value
60
40
6.0
200
Unit
V
V
V
mA
Absolute Maximum Ratings - PNP (Q2) (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Symbol
VCBO
VCEO
VEBO
IC
Value
-40
-40
-5.0
-200
Unit
V
V
V
mA
Symbol
PD
RJA
TJ, TSTG
Value
300
417
-55 to +150
Unit
mW
°C/W
°C
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Note:
5. Device mounted on FR-4 PCB with minimum recommended pad layout.
ESD Rating (Note 6)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Note:
Symbol
ESD HBM
ESD MM
Value
4,000
200
Unit
V
V
JEDEC Class
3A
B
6. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
DST3946DPJ
Document number: DS32044 Rev. 3 - 2
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DST3946DPJ
Thermal Characteristics and Derating Information
r(t), TRANSIENT THERMAL RESISTANCE
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
RJA(t) = r(t) * RJA
°C
RJA = 370°C/W
D = 0.9
D = 0.05
P(pk)
D = 0.02
0.01
t1
t2
TJ - TA = P * R JA(t)
Duty Cycle, D = t 1/t2
D = 0.01
D = 0.005
D = Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (s)
Fig. 1 Transient Thermal Response
100
1,000
0.4
1,000
Single Pulse
PD, POWER DISSIPATION (W)
P(pk), PEAK TRANSIENT POWER (W)
10
RJA(t) = r(t) * RJA
°C
RJA = 370°C/W
100
TJ - TA = P * RJA(t)
Duty Cycle, D = t 1/t2
10
1
0.1
0.00001
0.001
0.1
10
1,000
t1, PULSE DURATION TIME (s)
Fig. 2 Single Pulse Maximum Power Dissipation
DST3946DPJ
Document number: DS32044 Rev. 3 - 2
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0.3
0.2
0.1
0
0
20
40
60
80 100 120 140 160
TA, AMBIENT TEMPERATURE (C)
Fig. 3 Power Dissipation vs. Ambient Temperature
March 2016
© Diodes Incorporated
DST3946DPJ
Electrical Characteristics - NPN (Q1) (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 7)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 7)
Symbol
Min
Max
Unit
BVCBO
BVCEO
BVEBO
ICEX
IBL
60
40
6.0





50
50
V
V
V
nA
nA
hFE
40
70
100
60
30


300


Collector-Emitter Saturation Voltage
VCE(SAT)

0.20
0.30
V
Base-Emitter Saturation Voltage
VBE(SAT)
0.65

0.85
0.95
V
COBO
CIBO
hIE


1.0
4.0
8.5
10
pF
pF
kΩ
Voltage Feedback Ratio
hRE
0.5
8.0
x 10-4
Small Signal Current Gain
Output Admittance
hFE
hOE
100
1.0
400
40

µs
Current Gain-Bandwidth Product
fT
300

MHz
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
tD
tR
tS
tF




35
35
200
50
ns
ns
ns
ns
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Note:

Test Condition
IC = 10µA, IE = 0
IC = 1.0mA, IB = 0
IE = 10µA, IC = 0
VCE = 30V, VEB(OFF) = 3.0V
VCE = 30V, VEB(OFF) = 3.0V
IC = 100µA, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 50mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
VCB = 5.0V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
VCE = 20V, IC = 10mA,
f = 100MHz
VCC = 3.0V, IC = 10mA,
VBE(OFF) = - 0.5V, IB1 = 1.0mA
VCC = 3.0V, IC = 10mA,
IB1 = -IB2 = 1.0mA
7. Short duration pulse test used to minimize self-heating effect.
0.14
400
IB = 2mA
IB = 1.6mA
IB = 1.8mA
VCE = 5V
°C
TA = 150°C
IB = 1.4mA
IB = 1.2mA
0.10
hFE, DC CURRENT GAIN
IC, COLLECTOR CURRENT (A)
0.12
IB = 1mA
0.08
IB = 0.8mA
IB = 0.6mA
0.06
IB = 0.4mA
0.04
300
°C
T A = 125°C
°C
TA = 85°C
200
100
°C
TA = 25°C
°C
TA = -55°C
IB = 0.2mA
0.02
0
0
1
2
3
4
5
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
DST3946DPJ
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0
0.1
1
10
100
1,000
IC, COLLECTOR CURRENT (mA)
Fig. 5 Typical DC Current Gain vs. Collector Current
March 2016
© Diodes Incorporated
DST3946DPJ
1
1
IC/IB = 20
VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
IC/IB = 10
°C
T A = 150°C
0.1
°C
TA = 125°C
°C
TA = 85°C
°C
T A = 25°C
°C
TA = -55°C
0.1
°C
TA = 85°C
°C
TA = -55°C
0.01
0.1
0.01
0.1
1.1
1.2
VCE = 5V
0.9
°C
TA = -55°C
0.8
0.7
°C
TA = 25°C
0.6
TA = 150°C
°C
0.5
°C
TA = 125°C
0.4
0.3
0.1
°C
TA = 85°C
1
10
100
1,000
IC, COLLECTOR CURRENT (mA)
Fig. 8 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)
1.0
°C
TA = 25°C
1
10
100
1,000
IC, COLLECTOR CURRENT (mA)
Fig. 7 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1
10
100
1,000
IC, COLLECTOR CURRENT (mA)
Fig. 6 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V)
°C
TA = 150°C
°C
TA = 125°C
Gain = 10
1.0
0.8
0.6
°C
TA = -55°C
°C
TA = 25°C
°C
TA = 150°C
0.4
0.2
0.1
°C
TA = 125°C
°C
T A = 85°C
1
10
100
1,000
IC, COLLECTOR CURRENT (mA)
Fig. 9 Typical Base-Emitter Saturation Voltage
vs. Collector Current
10
IC, COLLECTOR CURRENT (A)
°C Single,
TA = 25°C
Non-Repetitive Pulse
1
PW = 1ms
DC
0.1
s
PW = 100µs
PW = 100ms
PW = 10ms
0.01
0.001
0.1
1
10
100
VCE, COLLECTOR EMITTER CURRENT (V)
Fig. 10 Safe Operation Area (NPN)
DST3946DPJ
Document number: DS32044 Rev. 3 - 2
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DST3946DPJ
Electrical Characteristics - PNP (Q2) (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 8)
Emitter-Base Breakdown Voltage
Symbol
Min
Max
Unit
BVCBO
BVCEO
BVEBO
ICEX
ICBO
IBL
-40
-40
-5.0






-50
-50
-50
V
V
V
nA
nA
nA
hFE
60
80
100
60
30


300


Collector-Emitter Saturation Voltage
VCE(SAT)

-0.25
-0.40
V
Base-Emitter Saturation Voltage
VBE(SAT)
-0.65

-0.85
-0.95
V
COBO
CIBO
hIE
hRE
hFE
hOE


2.0
0.1
100
3.0
4.5
10
12
10
400
60
pF
pF
kΩ
x 10-4

s
Current Gain-Bandwidth Product
fT
300

MHz
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
tD
tR
tS
tF




35
35
225
75
ns
ns
ns
ns
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 8)
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Note:

Test Condition
IC = -10µA, IE = 0
IC = -1.0mA, IB = 0
IE = -10µA, IC = 0
VCE = -30V, VEB(OFF) = -3.0V
VCE = -30V, IE = 0
VCE = -30V, VEB(OFF) = -3.0V
IC = -100µA, VCE = -1.0V
IC = -1.0mA, VCE = -1.0V
IC = -10mA, VCE = -1.0V
IC = -50mA, VCE = -1.0V
IC = -100mA, VCE = -1.0V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
VCB = -5.0V, f = 1.0MHz, IE = 0
VEB = -0.5V, f = 1.0MHz, IC = 0
VCE = -10V, IC = -1.0mA,
f = 1.0kHz
VCE = -20V, IC = -10mA,
f = 100MHz
VCC = -3.0V, IC = -10mA,
VBE(OFF) = 0.5V, IB1 = -1.0mA
VCC = -3.0V, IC = -10mA,
IB1 = -IB2 = -1.0mA
8. Short duration pulse test used to minimize self-heating effect.
0.20
400
IB = -2mA
0.16
IB = -1.8mA
VCE = 5V
350
°C
TA = 150°C
IB = -1.4mA
hFE, DC CURRENT GAIN
-IC, COLLECTOR CURRENT (A)
IB = -1.6mA
IB = -1.2mA
0.12
IB = -1mA
IB = -0.8mA
0.08
IB = -0.6mA
IB = -0.4mA
300
°C
TA = 125°C
250
°C
TA = 85°C
200
TA = 25°C
°C
150
100
°C
TA = -55°C
0.04
IB = -0.2mA
0
0
50
1
2
3
4
5
-VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 11 Typical Collector Current
vs. Collector-Emitter Voltage
DST3946DPJ
Document number: DS32044 Rev. 3 - 2
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0
0.1
1
10
100
1,000
-IC, COLLECTOR CURRENT (mA)
Fig. 12 Typical DC Current Gain vs. Collector Current
March 2016
© Diodes Incorporated
DST3946DPJ
1
1
IC/IB = 20
-V CE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
-VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
IC/IB = 10
°C
TA = 150°C
0.1
°C
TA = 125°C
°C
TA = 85°C
TA = 25°C
°C
°C
TA = -55°C
0.01
1.0
0.8
°C
TA = -55°C
°C
TA = 25°C
0.6
°C
TA = 150°C
°C
TA = 125°C
0.4
TA = 85°C
°C
0.2
0.1
1
10
100
1,000
-IC, COLLECTOR CURRENT (mA)
Fig. 15 Typical Base-Emitter Saturation Voltage
vs. Collector Current
-IC, COLLECTOR CURRENT (A)
10
°C
TA = 85°C
°C
TA = 25°C
°C
TA = -55°C
1
10
100
1,000
-IC, COLLECTOR CURRENT (mA)
Fig. 14 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
-VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)
-VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V)
10
100
1,000
-IC, COLLECTOR CURRENT (mA)
Fig. 13 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
Gain = 10
°C
TA = 125°C
0.01
0.1
1
1.2
°C
TA = 150°C
0.1
1.2
Gain = 10
1.0
0.8
°C
TA = -55°C
°C
T A = 25°C
0.6
°C
TA = 150°C
°C
TA = 125°C
0.4
°C
TA = 85°C
0.2
0.1
1
10
100
1,000
-IC, COLLECTOR CURRENT (mA)
Fig. 16 Typical Base-Emitter Saturation Voltage
vs. Collector Current
°C Single,
TA = 25°C
Non-Repetitive Pulse
1
PW = 1ms
DC
0.1
PW = 100µs
s
PW = 100ms
PW = 10ms
0.01
0.001
0.1
1
10
100
-VCE, COLLECTOR EMITTER CURRENT (V)
Fig. 17 Safe Operation Area (PNP)
DST3946DPJ
Document number: DS32044 Rev. 3 - 2
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DST3946DPJ
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT963
D
L1
e1
E1
E
c
e
b
A1
SOT963
Dim Min
Max Typ
A
0.40
0.50 0.45
A1
0.00
0.05
-b
0.10
0.20 0.15
c
0.120 0.180 0.150
D
0.95
1.05 1.00
E
0.95
1.05 1.00
E1
0.75
0.85 0.80
e
--0.35
e1
--0.70
L1
0.05
0.15 0.10
All Dimensions in mm
A
Seating plane
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT963
C
Dimensions
C
X
Y
Y1
Y1
Value
(in mm)
0.350
0.200
0.200
1.100
Y
X
DST3946DPJ
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DST3946DPJ
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
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