NTJD4158C D

NTJD4158C, NVJD4158C
Small Signal MOSFET
30 V/−20 V, +0.25/−0.88 A,
Complementary, SC−88
Features
•
•
•
•
•
Leading 20 V Trench for Low RDS(on) Performance
ESD Protected Gate
SC−88 Package for Small Footprint (2 x 2 mm)
NV Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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RDS(on) Typ
V(BR)DSS
ID Max
1.0 W @ 4.5 V
N−Ch
30 V
0.25 A
1.5 W @ 2.5 V
215 mW @ −4.5 V
P−Ch
−20 V
−0.88 A
345 mW @ −2.5 V
Applications
•
•
•
•
DC−DC Conversion
Load/Power Management
Load Switch
Cell Phones, MP3s, Digital Cameras, PDAs
SC−88 (SOT−363)
(6−Leads)
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
N−Ch
Symbol
Value
Unit
VDSS
30
V
P−Ch
Gate−to−Source Voltage
N−Ch
−20
VGS
Steady
State
P−Channel
Continuous Drain
Current (Note 1)
Steady
State
Power Dissipation
(Note 1)
Steady
State
Pulsed Drain Current
N−Ch
P−Ch
TA = 25°C
TA = 25°C
−0.88
TA = 85°C
−0.63
tp = 10 ms
N−Ch
Parameter
G1
2
5
G2
D2
3
4
S2
A
MARKING DIAGRAM &
PIN ASSIGNMENT
D1 G2 S2
6
1
0.27
W
IDM
0.5
A
SC−88 (SOT−363)
CASE 419B
STYLE 26
XXX MG
G
1
S1 G1 D2
−3.0
TJ, Tstg
−55 to
150
°C
IS
0.25
A
XXX
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
−0.48
TL
°C
260
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
THERMAL RESISTANCE RATINGS
Junction−to−Ambient – Steady State (Note 1)
D1
(Top View)
PD
P−Ch
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
6
V
0.25
0.18
Operating Junction and Storage Temperature
Source Current (Body Diode)
ID
TA = 85°C
TA = 25°C
1
±12
P−Ch
N−Channel
Continuous Drain
Current (Note 1)
±20
S1
Symbol
Max
Unit
RqJA
460
°C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
© Semiconductor Components Industries, LLC, 2015
Febuary, 2015 − Rev. 5
1
Publication Order Number:
NTJD4158C/D
NTJD4158C, NVJD4158C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
N/P
Drain−to−Source
Breakdown Voltage
V(BR)DSS
Drain−to−Source Breakdown
Voltage Temperature Coefficient
V(BR)DSS/
TJ
N
P
N
P
N
P
N
P
N
P
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS (Note 3)
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
IGSS
VGS = 0 V
ID = 250 mA
ID = −250 mA
V
30
−20
mV/
°C
33
−9.0
VGS = 0 V, VDS = 30 V
TJ = 25°C
VGS = 0 V, VDS = −16 V
VGS = 0 V, VDS = 30 V
TJ = 125°C
VGS = 0 V, VDS = −16 V
VDS = 0 V, VGS = 10 V
VDS = 0 V, VGS = −4.5 V
1.0
1.0
mA
1.0
1.0
mA
1.5
V
0.5
0.5
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGS(TH)
Negative Gate Threshold
Temperature Coefficient
VGS(TH)/
TJ
Drain−to−Source On Resistance
RDS(on)
Forward Transconductance
gFS
N
P
N
P
N
P
N
P
N
P
VGS = VDS
ID = 100 mA
ID = −250 mA
VGS = 4.5 V, ID = 10 mA
VGS = −4.5 V, ID = −0.88 A
VGS = 2.5 V, ID = 10 mA
VGS = −2.5 V, ID = −0.71 A
VDS = 3.0 V, ID = 10 mA
VDS = −10 V, ID = −0.88 A
0.8
−0.45
1.2
3.2
−2.7
1.0
0.215
1.5
0.345
0.08
3.0
mV/
°C
1.5
0.260
2.5
0.500
W
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
N
P
N
P
N
P
N
P
N
P
N
P
N
P
VDS = 5.0 V
VDS = −20 V
VDS = 5.0 V
f = 1 MHz, VGS = 0 V
VDS = −20 V
VDS = 5.0 V
VDS = −20 V
VGS = 5.0 V, VDS = 24 V, ID = 0.1 A
VGS = −4.5 V, VDS = −10 V, ID = −0.88 A
VGS = 5.0 V, VDS = 24 V, ID = 0.1 A
VGS = −4.5 V, VDS = −10 V, ID = −0.88 A
VGS = 5.0 V, VDS = 24 V, ID = 0.1 A
VGS = −4.5 V, VDS = −10 V, ID = −0.88 A
VGS = 5.0 V, VDS = 24 V, ID = 0.1 A
VGS = −4.5 V, VDS = −10 V, ID = −0.88 A
20
155
19
25
7.25
18
0.9
2.2
0.2
0.2
0.3
0.5
0.2
0.65
33
225
32
40
12
30
1.5
3.5
pF
nC
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
tf
td(ON)
tr
td(OFF)
tf
N
VGS = 4.5 V, VDD = 5.0 V,
ID = 250 mA, RG = 50 W
P
VGS = −4.5 V, VDD = −10 V,
ID = −0.5 A, RG = 20 W
ns
15
66
56
78
5.8
6.5
13.5
3.5
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
tRR
N
P
N
P
N
P
VGS = 0 V, TJ = 25°C
VGS = 0 V, TJ = 125°C
VGS = 0 V, dIS/dt = 8.0 A/ms
VGS = 0 V, dIS/dt = 100 A/ms
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
IS = 10 mA
IS = −0.48 A
IS = 10 mA
IS = −0.48 A
IS = 10 mA
IS = −0.48 mA
0.65
−0.8
0.45
−0.66
12.4
10.6
0.7
−1.2
V
ns
NTJD4158C, NVJD4158C
TYPICAL N−CHANNEL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
VGS = 10 V to 2.8 V
VGS = 2.6 V
0.16
0.2
TJ = 25°C
VDS = 5 V
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
0.2
0.18
2.2 V
2.4 V
0.14
0.12
0.1
2V
0.08
0.06
0.04
1.8 V
0.15
0.1
0.05
0.02
TJ = −55°C
0
0.25
0.5
0.75
1
1.25
1.5
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1
1.25
1.5
1.75
2.25
2
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
0
1.3
VGS = 4.5 V
1.2
TJ = 125°C
1.1
1.0
0.9
TJ = 25°C
0.8
0.7
0.6
TJ = −55°C
0.5
0.4
0.005
0.055
0.105
0.155
ID, DRAIN CURRENT (AMPS)
0.205
TJ = 25°C
2.0
VGS = 2.5 V
1.5
1.0
VGS = 4 V
0.5
0
0.005
0.055
0.105
0.155
ID, DRAIN CURRENT (AMPS)
0.205
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2
1.75
2.5
2.5
Figure 3. On−Resistance vs. Drain Current and
Temperature
1000
ID = 0.01 A
VGS = 4.5 V
VGS = 0 V
1.5
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
25°C
TJ = 125°C
1.25
1
0.75
0.5
TJ = 150°C
100
TJ = 125°C
0.25
0
−50
10
−25
0
25
50
75
100
125
150
0
TJ, JUNCTION TEMPERATURE (°C)
5
10
15
20
25
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
30
NTJD4158C, NVJD4158C
C, CAPACITANCE (pF)
50
VDS = 0 V
40
Ciss
30
Crss
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
TYPICAL N−CHANNEL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
TJ = 25°C
VGS = 0 V
20
Ciss
Coss
10
Crss
0
10
5
VGS
0
VDS
5
10
15
20
25
5
QG
4
3
QGS
2
1
ID = 0.1 A
TJ = 25°C
0
0
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.4
0.8
0.2
0.6
QG, TOTAL GATE CHARGE (nC)
1
Figure 8. Gate−to−Source Voltage vs. Total
Gate Charge
Figure 7. Capacitance Variation
1000
0.1
100
IS, SOURCE CURRENT (AMPS)
VDD = 5.0 V
ID = 0.25 A
VGS = 4.5 V
t, TIME (ns)
QGD
tf
tr
td(off)
td(on)
10
1
10
VGS = 0 V
TJ = 25°C
0.08
0.06
0.04
0.02
0
0.5
100
0.55
0.6
0.65
0.7
0.75
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
RG, GATE RESISTANCE (OHMS)
Figure 10. Diode Forward Voltage vs. Current
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
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4
NTJD4158C, NVJD4158C
TYPICAL P−CHANNEL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
1
1
TJ = 25°C
−2 V
−ID, DRAIN CURRENT (AMPS)
−ID, DRAIN CURRENT (AMPS)
VGS = −4.5, −3.5 & −2.5 V
−1.75 V
0.75
0.5
−1.5 V
0.25
−1.25 V
−1 V
0
0.4
0
0.8
0.8
0.7
0.6
0.5
0.4
125°C
0.3
0.2
25°C
0.1
TJ = −55°C
0
1.6
1.2
VDS ≥ −20 V
0.9
2
0
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
Figure 1. On−Region Characteristics
0.3
VGS = −4.5 V
TJ = 125°C
0.25
0.2
TJ = 25°C
0.15
TJ = −55°C
0.1
0
0.25
0.5
1
0.75
−ID, DRAIN CURRENT (AMPS)
0.5
TJ = 25°C
0.4
VGS = −2.5 V
0.3
VGS = −4.5 V
0.2
0.1
0
0.4
0.7
0.8
0.9
1
10000
VGS = 0 V
ID = −0.88 A
VGS = −4.5 V
−IDSS, LEAKAGE CURRENT (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
0.6
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.0
1.6
1.4
TJ = 150°C
1000
1.2
1.0
0.8
0.6
0.4
0.2
0
−50
0.5
−ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Drain Current and
Temperature
1.8
0.5
1
1.5
2
2.5
3
3.5
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
TJ = 125°C
100
10
−25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
5
15
10
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
0
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5
20
NTJD4158C, NVJD4158C
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
TYPICAL P−CHANNEL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
350
VDS = 0 V
Ciss
VGS = 0 V
TJ = 25°C
C, CAPACITANCE (pF)
300
250
Crss
200
150
100
50
Coss
0
10
5
VGS
0
VDS
5
15
10
20
5
QT
4
3
Q1
1
ID = −0.88 A
TJ = 25°C
0
0
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.4
0.8
1.2
1.6
Qg, TOTAL GATE CHARGE (nC)
2
Figure 8. Gate−to−Source Voltage vs. Total
Gate Charge
Figure 7. Capacitance Variation
100
0.5
−IS, SOURCE CURRENT (AMPS)
t, TIME (ns)
Q2
2
td(off)
tr
10
td(on)
VDD = −10 V
ID = −0.8 A
VGS = −4.5 V
tf
1
VGS = 0 V
TJ = 25°C
0.4
0.3
0.2
0.1
0
1
10
100
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
ORDERING INFORMATION
Device
Marking
NTJD4158CT1G
TCD
NTJD4158CT2G
TCD
NVJD4158CT1G*
VCD
Package
Shipping†
SC−88
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
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6
NTJD4158C, NVJD4158C
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE Y
2X
aaa H D
D
H
A
D
6
5
GAGE
PLANE
4
L
L2
E1
E
1
2
DETAIL A
3
aaa C
2X
bbb H D
2X 3 TIPS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOOT.
e
B
6X
ddd
TOP VIEW
DIM
A
A1
A2
b
C
D
E
E1
e
L
L2
aaa
bbb
ccc
ddd
b
C A-B D
M
A2
DETAIL A
A
6X
ccc C
A1
C
SIDE VIEW
SEATING
PLANE
c
MILLIMETERS
MIN
NOM MAX
−−−
−−−
1.10
0.00
−−−
0.10
0.70
0.90
1.00
0.15
0.20
0.25
0.08
0.15
0.22
1.80
2.00
2.20
2.00
2.10
2.20
1.15
1.25
1.35
0.65 BSC
0.26
0.36
0.46
0.15 BSC
0.15
0.30
0.10
0.10
STYLE 26:
PIN 1. SOURCE 1
2. GATE 1
3. DRAIN 2
4. SOURCE 2
5. GATE 2
6. DRAIN 1
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
6X
6X
0.30
INCHES
NOM MAX
−−− 0.043
−−− 0.004
0.035 0.039
0.008 0.010
0.006 0.009
0.078 0.086
0.082 0.086
0.049 0.053
0.026 BSC
0.010 0.014 0.018
0.006 BSC
0.006
0.012
0.004
0.004
MIN
−−−
0.000
0.027
0.006
0.003
0.070
0.078
0.045
0.66
2.50
0.65
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
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or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
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For additional information, please contact your local
Sales Representative
NTJD4158C/D