VISHAY BAW56-V

BAW56-V
Vishay Semiconductors
Small Signal Switching Diode, Dual
Features
• Silicon Epitaxial Planar Diode
• Fast switching dual diode with common
e3
anode
• This diode is also available in other configurations including: a single with type designation BAL99, a dual anode to cathode with type
designation BAV99, and a dual common cathode
with type designation BAV70.
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
2
3
1
1
3
2
17033
Mechanical Data
Case: SOT23 Plastic case
Weight: approx. 8.8 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
BAW56-V
Ordering code
Marking
Remarks
BAW56-V-GS18 or BAW56-V-GS08
JD
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Repetitive peak reverse voltage
= Working peak reverse voltage
= DC Blocking voltage
Forward continuous current
Non repetitive peak forward
current
Value
Unit
70
V
IF
250
mA
tp = 1 μs
IFSM
2.0
A
tp = 1 ms
IFSM
1.0
A
tp = 1 s
IFSM
0.5
A
Ptot
3501)
mW
Power dissipation
1)
Symbol
VR = VRRM
Device on fiberglass substrate, see layout
Document Number 85549
Rev. 1.7, 09-Mar-06
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1
BAW56-V
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
RthJA
430
K/W
Tj
150
°C
Tstg
- 65 to + 150
°C
Thermal resistance junction to
ambiant air
Junction temperature
Storage temperature range
1)
Device on fiberglass substrate, see layout
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Forward voltage
Reverse current
Max
Unit
IF = 1 mA
Test condition
Symbol
VF
Min
Typ.
715
mV
IF = 10 mA
VF
855
mV
IF = 50 mA
VF
1000
mV
IF = 150 mA
VF
1250
mV
VR = 70 V
IR
2.5
µA
VR = 70 V, Tj = 150 °C
IR
100
µA
VR = 25 V, Tj = 150 °C
IR
30
µA
Diode capacitance
VF = VR = 0, f = 1 MHz
Ctot
2
pF
Reverse recovery time
IF = 10 mA to IR = 1 mA,
VR = 6 V, RL = 100 Ω
trr
6
ns
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
IF - Forward Current (mA)
1000
100
T j = 100 °C
10
25 °C
1
0.1
0.01
14356
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V F - Forward Voltage (V)
Figure 1. Forward Current vs. Forward Voltage
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Figure 2. Peak forward current IFM = f (tp)
Document Number 85549
Rev. 1.7, 09-Mar-06
BAW56-V
Vishay Semiconductors
Package Dimensions in mm (Inches)
17418
Document Number 85549
Rev. 1.7, 09-Mar-06
www.vishay.com
3
BAW56-V
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 85549
Rev. 1.7, 09-Mar-06
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
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document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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