MMBZ5V6ALT1 D

MMBZxxxALT1G Series,
SZMMBZxxxALT1G Series
24 and 40 Watt Peak Power
Zener Transient Voltage
Suppressors
www.onsemi.com
SOT−23 Dual Common Anode Zeners
for ESD Protection
These dual monolithic silicon Zener diodes are designed for
applications requiring transient overvoltage protection capability. They
are intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment and other applications. Their dual junction common
anode design protects two separate lines using only one package. These
devices are ideal for situations where board space is at a premium.
CATHODE 1
Features
CATHODE 2
SOT−23
CASE 318
STYLE 12
3 ANODE
• SOT−23 Package Allows Either Two Separate Unidirectional
Configurations or a Single Bidirectional Configuration
• Working Peak Reverse Voltage Range − 3 V to 26 V
• Standard Zener Breakdown Voltage Range − 5.6 V to 47 V
• Peak Power − 24 or 40 W @ 1.0 ms (Unidirectional),
MARKING DIAGRAM
per Figure 6 Waveform
XXXMG
G
• ESD Rating:
•
•
•
•
•
•
− Class 3B (> 16 kV) per the Human Body Model
− Class C (> 400 V) per the Machine Model
ESD Rating of IEC61000−4−2 Level 4, ±30 kV Contact Discharge
Maximum Clamping Voltage @ Peak Pulse Current
Low Leakage < 5.0 mA
Flammability Rating UL 94 V−0
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
1
XXX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
DEVICE MARKING INFORMATION
Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
See specific marking information in the device marking
column of the table on page 3 of this data sheet.
260°C for 10 Seconds
Package designed for optimal automated board assembly
Small package size for high density applications
Available in 8 mm Tape and Reel
Use the Device Number to order the 7 inch/3,000 unit reel.
Replace the “T1” with “T3” in the Device Number to order the
13 inch/10,000 unit reel.
© Semiconductor Components Industries, LLC, 2015
October, 2015 − Rev. 18
1
Publication Order Number:
MMBZ5V6ALT1/D
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series
MAXIMUM RATINGS
Rating
Peak Power Dissipation @ 1.0 ms (Note 1)
@ TL ≤ 25°C
MMBZ5V6ALT1G thru MMBZ9V1ALT1G
MMBZ12VALT1G thru MMBZ47VALT1G
Symbol
Value
Unit
Ppk
24
40
W
225
1.8
mW°
mW/°C
556
°C/W
300
2.4
°mW
mW/°C
Total Power Dissipation on FR−5 Board (Note 2)
@ TA = 25°C
Derate above 25°C
°PD°
Thermal Resistance Junction−to−Ambient
RqJA
Total Power Dissipation on Alumina Substrate (Note 3)
@ TA = 25°C
Derate above 25°C
°PD°
Thermal Resistance Junction−to−Ambient
RqJA
417
°C/W
Junction and Storage Temperature Range
TJ, Tstg
− 55 to +150
°C
TL
260
°C
Lead Solder Temperature − Maximum (10 Second Duration)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Non−repetitive current pulse per Figure 6 and derate above TA = 25°C per Figure 7.
2. FR−5 = 1.0 x 0.75 x 0.62 in.
3. Alumina = 0.4 x 0.3 x 0.024 in, 99.5% alumina.
*Other voltages may be available upon request.
ORDERING INFORMATION
Package
Shipping†
MMBZ5V6ALT1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
SZMMBZ5V6ALT1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
MMBZ5V6ALT3G
SOT−23
(Pb−Free)
10,000 / Tape & Reel
MMBZ6VxALT1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
SZMMBZ6VxALT1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
MMBZ6VxALT3G
SOT−23
(Pb−Free)
10,000 / Tape & Reel
MMBZ9V1ALT1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
MMBZ9V1ALT13G
SOT−23
(Pb−Free)
10,000 / Tape & Reel
MMBZxxVALT1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
SZMMBZxxVALT1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
MMBZxxVALT3G
SOT−23
(Pb−Free)
10,000 / Tape & Reel
SZMMBZxxVALT3G
SOT−23
(Pb−Free)
10,000 / Tape & Reel
SZMMBZxxVTALT1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Parameter
Symbol
IF
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
IR
I
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
VBR
VC VBR VRWM
Breakdown Voltage @ IT
IT
Test Current
QVBR
V
IR VF
IT
Maximum Temperature Coefficient of VBR
IF
Forward Current
VF
Forward Voltage @ IF
ZZT
Maximum Zener Impedance @ IZT
IZK
Reverse Current
ZZK
Maximum Zener Impedance @ IZK
IPP
Uni−Directional TVS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(VF = 0.9 V Max @ IF = 10 mA) (5% Tolerance)
24 WATTS
Breakdown Voltage
IR @
VRWM
VBR (Note 4) (V)
@ IT
Max Zener
Impedance (Note 5)
VC @ IPP
(Note 6)
ZZT
@ IZT
VC
ZZK @ IZK
Device*
Device
Marking
VRWM
Volts
mA
Min
Nom
Max
mA
W
W
mA
MMBZ5V6ALT1G/T3G
5A6
3.0
5.0
5.32
5.6
5.88
20
11
1600
0.25
MMBZ6V2ALT1G
6A2
3.0
0.5
5.89
6.2
6.51
1.0
−
−
−
MMBZ6V8ALT1G
6A8
4.5
0.5
6.46
6.8
7.14
1.0
−
−
−
MMBZ9V1ALT1G
9A1
6.0
0.3
8.65
9.1
9.56
1.0
−
−
−
(VF = 0.9 V Max @ IF = 10 mA) (5% Tolerance)
QVBR
V
A
mV/5C
8.0
3.0
1.26
8.7
2.76
2.80
9.6
2.5
3.4
14
1.7
7.5
40 WATTS
IR @
VRWM
Breakdown Voltage
VC @ IPP (Note 6)
IPP
QVBR
V
A
mV/5C
17
2.35
7.5
21
1.9
12.3
23
1.7
13.8
1.0
25
1.6
15.3
21.00
1.0
28
1.4
17.2
28.35
1.0
40
1.0
24.3
33
34.65
1.0
46
0.87
30.4
47
49.35
1.0
54
0.74
43.1
VBR (Note 4) (V)
@ IT
Device
Marking
VRWM
Volts
nA
Min
Nom
Max
mA
MMBZ12VALT1G
12A
8.5
200
11.40
12
12.60
1.0
MMBZ15VALT1G
15A
12
50
14.25
15
15.75
1.0
MMBZ16VALT1G
16A
13
50
15.20
16
16.80
1.0
MMBZ18VALT1G
18A
14.5
50
17.10
18
18.90
MMBZ20VALT1G
20A
17
50
19.00
20
MMBZ27VALT1G/T3G
27A
22
50
25.65
27
MMBZ33VALT1G
33A
26
50
31.35
MMBZ47VALT1G
47A
38
50
44.65
Device*
IPP
(VF = 0.9 V Max @ IF = 10 mA) (2% Tolerance)
VC
40 WATTS
Breakdown Voltage
VC @ IPP (Note 6)
Device
Marking
VRWM
IR @
VRWM
@ IT
VC
IPP
QVBR
Volts
nA
Min
Nom
Max
mA
V
A
mV/5C
MMBZ16VTALT1G
16T
13
50
15.68
16
16.32
1.0
23
1.7
13.8
MMBZ47VTALT1G
47T
38
50
46.06
47
47.94
1.0
54
0.74
43.1
Device*
VBR (Note 4) (V)
4. VBR measured at pulse test current IT at an ambient temperature of 25°C.
5. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(AC)
= 0.1 IZ(DC), with the AC frequency = 1.0 kHz.
6. Surge current waveform per Figure 6 and derate per Figure 7
* Include SZ-prefix devices where applicable.
www.onsemi.com
3
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series
TYPICAL CHARACTERISTICS
1000
15
100
12
IR (nA)
BREAKDOWN VOLTAGE (VOLTS)
(VBR @ IT)
18
9
10
1
6
0.1
3
0
−40
0
+ 50
+ 100
TEMPERATURE (°C)
0.01
−40
+ 150
Figure 1. Typical Breakdown Voltage
versus Temperature
+ 85
+ 25
TEMPERATURE (°C)
+ 125
Figure 2. Typical Leakage Current
versus Temperature
(Upper curve for each voltage is bidirectional mode,
lower curve is unidirectional mode)
60
320
C, CAPACITANCE (pF)
50
240
200
5.6 V
160
120
15 V
80
40
27 V
30
20
10
40
0
33 V
0
0
1
2
3
0
1
BIAS (V)
2
3
BIAS (V)
Figure 3. Typical Capacitance versus Bias Voltage
Figure 4. Typical Capacitance versus Bias Voltage
(Upper curve for each voltage is unidirectional mode,
lower curve is bidirectional mode)
(Upper curve for each voltage is unidirectional mode,
lower curve is bidirectional mode)
300
PD, POWER DISSIPATION (mW)
C, CAPACITANCE (pF)
280
250
ALUMINA SUBSTRATE
200
150
100
FR−5 BOARD
50
0
0
25
50
75
100
125
TEMPERATURE (°C)
150
175
Figure 5. Steady State Power Derating Curve
www.onsemi.com
4
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO
50% OF IPP.
tr ≤ 10 ms
VALUE (%)
100
PEAK VALUE − IPP
IPP
HALF VALUE −
2
50
tP
0
0
1
2
3
t, TIME (ms)
4
PEAK PULSE DERATING IN % OF PEAK
POWER OR CURRENT @ TA = 25°C
TYPICAL CHARACTERISTICS
100
90
80
70
60
50
40
30
20
10
0
0
25
Figure 6. Pulse Waveform
100
Ppk, PEAK SURGE POWER (W)
Ppk, PEAK SURGE POWER (W)
RECTANGULAR
WAVEFORM, TA = 25°C
BIDIRECTIONAL
1
200
Figure 7. Pulse Derating Curve
100
10
50
75
100
125
150 175
TA, AMBIENT TEMPERATURE (°C)
UNIDIRECTIONAL
RECTANGULAR
WAVEFORM, TA = 25°C
BIDIRECTIONAL
10
UNIDIRECTIONAL
1
0.1
1
10
100
1000
0.1
1
10
100
PW, PULSE WIDTH (ms)
PW, PULSE WIDTH (ms)
Figure 8. Maximum Non−repetitive Surge
Power, Ppk versus PW
Figure 9. Maximum Non−repetitive Surge
Power, Ppk(NOM) versus PW
Power is defined as VZ(NOM) x IZ(pk) where
VZ(NOM) is the nominal Zener voltage measured at
the low test current used for voltage classification.
Power is defined as VRSM x IZ(pk) where VRSM is
the clamping voltage at IZ(pk).
www.onsemi.com
5
1000
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series
TYPICAL COMMON ANODE APPLICATIONS
A dual junction common anode design in a SOT−23
package protects two separate lines using only one package.
This adds flexibility and creativity to PCB design especially
when board space is at a premium. Two simplified examples
of TVS applications are illustrated below.
Computer Interface Protection
A
KEYBOARD
TERMINAL
PRINTER
ETC.
B
C
I/O
D
FUNCTIONAL
DECODER
GND
MMBZ5V6ALT1G
THRU
MMBZ47VALT1G
Microprocessor Protection
VDD
VGG
ADDRESS BUS
RAM
ROM
DATA BUS
CPU
I/O
CLOCK
MMBZ5V6ALT1G
THRU
MMBZ47VALT1G
CONTROL BUS
GND
MMBZ5V6ALT1G
THRU
MMBZ47VALT1G
www.onsemi.com
6
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
b
0.25
e
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°
STYLE 12:
PIN 1. CATHODE
2. CATHODE
3. ANODE
L1
VIEW C
SOLDERING FOOTPRINT
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable
copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
7
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
MMBZ5V6ALT1/D