English/Chinese (simplified)

技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF200R12KS4
62mmC-Series模块采用第二高速IGBT和碳化硅二极管针对高频应用
62mmC-SeriesmodulewiththefastIGBT2forhigh-frequencyswitching
VCES = 1200V
IC nom = 200A / ICRM = 400A
典型应用
• 高频开关应用
• 医疗应用
• 电机传动
• 谐振逆变器应用
• 伺服驱动器
• UPS系统
TypicalApplications
• HighFrequencySwitchingApplication
• MedicalApplications
• MotorDrives
• ResonantInverterAppliccations
• ServoDrives
• UPSSystems
电气特性
• 高短路能力,自限制短路电流
• 低开关损耗
• 无与伦比的坚固性
• VCEsat带正温度系数
ElectricalFeatures
• High Short Circuit Capability, Self Limiting Short
CircuitCurrent
• LowSwitchingLosses
• UnbeatableRobustness
• VCEsatwithpositiveTemperatureCoefficient
机械特性
• 封装的CTI>400
• 高爬电距离和电气间隙
• 绝缘的基板
• 铜基板
• 标封装
MechanicalFeatures
• PackagewithCTI>400
• HighCreepageandClearanceDistances
• IsolatedBasePlate
• CopperBasePlate
• StandardHousing
ModuleLabelCode
BarcodeCode128
DMX-Code
preparedby:MB
dateofpublication:2013-10-02
approvedby:WR
revision:3.4
ContentoftheCode
Digit
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
1-5
6-11
12-19
20-21
22-23
ULapproved(E83335)
1
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF200R12KS4
IGBT,逆变器/IGBT,Inverter
最大额定值/MaximumRatedValues
集电极-发射极电压
Collector-emittervoltage
Tvj = 25°C
VCES
1200
V
连续集电极直流电流
ContinuousDCcollectorcurrent
TC = 65°C, Tvj max = 150°C
TC = 25°C, Tvj max = 150°C
IC nom
IC
200
275
集电极重复峰值电流
Repetitivepeakcollectorcurrent
tP = 1 ms
ICRM
400
A
总功率损耗
Totalpowerdissipation
TC = 25°C, Tvj max = 150
Ptot
1400
W
栅极-发射极峰值电压
Gate-emitterpeakvoltage
VGES
+/-20
V
特征值/CharacteristicValues
min.
集电极-发射极饱和电压
Collector-emittersaturationvoltage
IC = 200 A, VGE = 15 V
IC = 200 A, VGE = 15 V
栅极阈值电压
Gatethresholdvoltage
IC = 8,00 mA, VCE = VGE, Tvj = 25°C
栅极电荷
Gatecharge
Tvj = 25°C
Tvj = 125°C
VCE sat
A
A
typ.
max.
3,20
3,85
3,70
V
V
VGEth
4,5
5,5
6,5
V
VGE = -15 V ... +15 V
QG
2,10
µC
内部栅极电阻
Internalgateresistor
Tvj = 25°C
RGint
2,5
Ω
输入电容
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cies
13,0
nF
反向传输电容
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cres
0,85
nF
集电极-发射极截止电流
Collector-emittercut-offcurrent
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
ICES
5,0
mA
栅极-发射极漏电流
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
IGES
400
nA
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload
IC = 200 A, VCE = 600 V
VGE = ±15 V
RGon = 4,7 Ω
Tvj = 25°C
Tvj = 125°C
td on
0,10
0,11
µs
µs
上升时间(电感负载)
Risetime,inductiveload
IC = 200 A, VCE = 600 V
VGE = ±15 V
RGon = 4,7 Ω
Tvj = 25°C
Tvj = 125°C
tr
0,06
0,07
µs
µs
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload
IC = 200 A, VCE = 600 V
VGE = ±15 V
RGoff = 4,7 Ω
Tvj = 25°C
Tvj = 125°C
td off
0,53
0,55
µs
µs
下降时间(电感负载)
Falltime,inductiveload
IC = 200 A, VCE = 600 V
VGE = ±15 V
RGoff = 4,7 Ω
Tvj = 25°C
Tvj = 125°C
tf
0,03
0,04
µs
µs
开通损耗能量(每脉冲)
Turn-onenergylossperpulse
IC = 200 A, VCE = 600 V, LS = 60 nH
VGE = ±15 V, di/dt = 3500 A/µs
RGon = 4,7 Ω
Tvj = 25°C
Tvj = 125°C
Eon
19,0
mJ
mJ
关断损耗能量(每脉冲)
Turn-offenergylossperpulse
IC = 200 A, VCE = 600 V, LS = 60 nH
VGE = ±15 V, du/dt = 7000 V/µs
RGoff = 4,7 Ω
Tvj = 25°C
Tvj = 125°C
Eoff
12,0
mJ
mJ
短路数据
SCdata
VGE ≤ 15 V, VCC = 900 V
VCEmax = VCES -LsCE ·di/dt
ISC
结-外壳热阻
Thermalresistance,junctiontocase
每个IGBT/perIGBT
RthJC
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个IGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,03
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
preparedby:MB
dateofpublication:2013-10-02
approvedby:WR
revision:3.4
2
tP ≤ 10 µs, Tvj = 125°C
1300
A
0,09 K/W
K/W
125
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF200R12KS4
二极管,逆变器/Diode,Inverter
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 25°C
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
tP = 1 ms
I2t-值
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VRRM 1200
V
IF
200
A
IFRM
400
A
I²t
8500
A²s
特征值/CharacteristicValues
min.
typ.
max.
2,00
1,70
2,40
正向电压
Forwardvoltage
IF = 200 A, VGE = 0 V
IF = 200 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
VF
反向恢复峰值电流
Peakreverserecoverycurrent
IF = 200 A, - diF/dt = 3500 A/µs (Tvj=125°C) Tvj = 25°C
VR = 600 V
Tvj = 125°C
VGE = -15 V
IRM
140
210
A
A
恢复电荷
Recoveredcharge
IF = 200 A, - diF/dt = 3500 A/µs (Tvj=125°C) Tvj = 25°C
VR = 600 V
Tvj = 125°C
VGE = -15 V
Qr
11,5
32,0
µC
µC
反向恢复损耗(每脉冲)
Reverserecoveryenergy
IF = 200 A, - diF/dt = 3500 A/µs (Tvj=125°C) Tvj = 25°C
VR = 600 V
Tvj = 125°C
VGE = -15 V
Erec
4,20
11,0
mJ
mJ
结-外壳热阻
Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,06
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
preparedby:MB
dateofpublication:2013-10-02
approvedby:WR
revision:3.4
3
V
V
0,18 K/W
K/W
125
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF200R12KS4
模块/Module
绝缘测试电压
Isolationtestvoltage
RMS, f = 50 Hz, t = 1 min.
模块基板材料
Materialofmodulebaseplate
内部绝缘
Internalisolation
基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140)
爬电距离
Creepagedistance
VISOL 2,5
kV
Cu
Al2O3
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
29,0
23,0
mm
电气间隙
Clearance
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
23,0
11,0
mm
相对电痕指数
Comperativetrackingindex
CTI
> 400
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个模块/permodule
λPaste=1W/(m·K)/λgrease=1W/(m·K)
杂散电感,模块
Strayinductancemodule
模块引线电阻,端子-芯片
Moduleleadresistance,terminals-chip
TC=25°C,每个开关/perswitch
储存温度
Storagetemperature
模块安装的安装扭距
Mountingtorqueformodulmounting
min.
typ.
RthCH
0,01
LsCE
20
nH
RCC'+EE'
0,70
mΩ
Tstg
-40
125
°C
螺丝M6根据相应的应用手册进行安装
ScrewM6-Mountingaccordingtovalidapplicationnote
M
3,00
-
6,00
Nm
端子联接扭距
Terminalconnectiontorque
螺丝M6根据相应的应用手册进行安装
ScrewM6-Mountingaccordingtovalidapplicationnote
M
2,5
-
5,0
Nm
重量
Weight
G
340
g
preparedby:MB
dateofpublication:2013-10-02
approvedby:WR
revision:3.4
4
max.
K/W
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF200R12KS4
输出特性IGBT,逆变器(典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
VGE=15V
输出特性IGBT,逆变器(典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
Tvj=125°C
400
400
Tvj = 25°C
Tvj = 125°C
350
300
300
250
250
IC [A]
IC [A]
350
200
200
150
150
100
100
50
50
0
VGE =8V
VGE = 9V
VGE = 10V
VGE = 12V
VGE = 15V
VGE = 20V
0
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0
VCE [V]
传输特性IGBT,逆变器(典型)
transfercharacteristicIGBT,Inverter(typical)
IC=f(VGE)
VCE=20V
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0
VCE [V]
开关损耗IGBT,逆变器(典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(IC),Eoff=f(IC)
VGE=±15V,RGon=4.7Ω,RGoff=4.7Ω,VCE=600V
400
60
Tvj = 25°C
Tvj = 125°C
350
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
50
300
40
E [mJ]
IC [A]
250
200
30
150
20
100
10
50
0
5
6
7
8
9
VGE [V]
10
11
0
12
preparedby:MB
dateofpublication:2013-10-02
approvedby:WR
revision:3.4
5
0
50
100
150
200
IC [A]
250
300
350
400
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF200R12KS4
开关损耗IGBT,逆变器(典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=200A,VCE=600V
瞬态热阻抗IGBT,逆变器
transientthermalimpedanceIGBT,Inverter
ZthJC=f(t)
100
1
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
90
ZthJC : IGBT
80
70
0,1
ZthJC [K/W]
E [mJ]
60
50
40
0,01
30
20
i:
1
2
3
4
ri[K/W]: 0,0054 0,0297 0,0288 0,0261
τi[s]:
0,01
0,02
0,05
0,1
10
0
0
5
10
15
RG [Ω]
20
25
0,001
0,001
30
反偏安全工作区IGBT,逆变器(RBSOA)
reversebiassafeoperatingareaIGBT,Inverter(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=4.7Ω,Tvj=125°C
0,01
0,1
t [s]
1
10
正向偏压特性二极管,逆变器(典型)
forwardcharacteristicofDiode,Inverter(typical)
IF=f(VF)
450
400
IC, Modul
IC, Chip
400
Tvj = 25°C
Tvj = 125°C
350
350
300
300
250
IF [A]
IC [A]
250
200
200
150
150
100
100
50
50
0
0
200
400
600
800
VCE [V]
1000
1200
0
1400
preparedby:MB
dateofpublication:2013-10-02
approvedby:WR
revision:3.4
6
0,0
0,5
1,0
1,5
VF [V]
2,0
2,5
3,0
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF200R12KS4
开关损耗二极管,逆变器(典型)
switchinglossesDiode,Inverter(typical)
Erec=f(IF)
RGon=4.7Ω,VCE=600V
开关损耗二极管,逆变器(典型)
switchinglossesDiode,Inverter(typical)
Erec=f(RG)
IF=200A,VCE=600V
20
15
Erec, Tvj = 125°C
Erec, Tvj = 125°C
18
16
12
14
9
E [mJ]
E [mJ]
12
10
8
6
6
4
3
2
0
0
50
100
150
200
IF [A]
250
300
350
0
400
瞬态热阻抗二极管,逆变器
transientthermalimpedanceDiode,Inverter
ZthJC=f(t)
1
ZthJC : Diode
ZthJC [K/W]
0,1
0,01
i:
1
2
3
4
ri[K/W]: 0,0108 0,0594 0,0576 0,0522
τi[s]:
0,01
0,02
0,05
0,1
0,001
0,001
0,01
0,1
t [s]
1
10
preparedby:MB
dateofpublication:2013-10-02
approvedby:WR
revision:3.4
7
0
5
10
15
RG [Ω]
20
25
30
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF200R12KS4
接线图/circuit_diagram_headline
封装尺寸/packageoutlines
In fin e o n
preparedby:MB
dateofpublication:2013-10-02
approvedby:WR
revision:3.4
8
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF200R12KS4
使用条件和条款
使用条件和条款
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Terms&Conditionsofusage
Thedatacontainedinthisproductdatasheetisexclusivelyintendedfortechnicallytrainedstaff.Youandyourtechnicaldepartmentswill
havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch
application.
Thisproductdatasheetisdescribingthecharacteristicsofthisproductforwhichawarrantyisgranted.Anysuchwarrantyisgranted
exclusivelypursuantthetermsandconditionsofthesupplyagreement.Therewillbenoguaranteeofanykindfortheproductandits
characteristics.Theinformationinthevalidapplication-andassemblynotesofthemodulemustbeconsidered.
Shouldyourequireproductinformationinexcessofthedatagiveninthisproductdatasheetorwhichconcernsthespecificapplicationof
ourproduct,pleasecontactthesalesoffice,whichisresponsibleforyou(seewww.infineon.com).Forthosethatarespecifically
interestedwemayprovideapplicationnotes.
Duetotechnicalrequirementsourproductmaycontaindangeroussubstances.Forinformationonthetypesinquestionpleasecontactthe
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ShouldyouintendtousetheProductinaviationapplications,inhealthorliveendangeringorlifesupportapplications,pleasenotify.Please
note,thatforanysuchapplicationsweurgentlyrecommend
-toperformjointRiskandQualityAssessments;
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Ifandtotheextentnecessary,pleaseforwardequivalentnoticestoyourcustomers.
Changesofthisproductdatasheetarereserved.
preparedby:MB
dateofpublication:2013-10-02
approvedby:WR
revision:3.4
9
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