Chinese (simplified)/English

技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FF800R17KP4_B2
IHM-A模块采用第四代沟槽栅/场终止IGBT4和第三代发射极控制二极管
IHM-AmodulewithTrench/FieldstopIGBT4andEmitterControlled3diode
VCES = 1700V
IC nom = 800A / ICRM = 1600A
典型应用
• 大功率变流器
• 中压变流器
• 电机传动
• 牵引变流器
• 风力发电机
TypicalApplications
• Highpowerconverters
• Mediumvoltageconverters
• Motordrives
• Tractiondrives
• Windturbines
电气特性
• 提高工作结温Tvjop
• 低VCEsat
• Tvjop=150°C
• 增大的二极管针对反馈运行模式
ElectricalFeatures
• ExtendedoperatingtemperatureTvjop
• LowVCEsat
• Tvjop=150°C
• Enlargeddiodeforregenerativeoperation
机械特性
• 4kV交流1分钟绝缘
• 碳化硅铝(AlSiC)基板提供更高的温度循环能力
MechanicalFeatures
• 4kVAC1mininsulation
• AlSiC base plate for increased thermal cycling
capability
• Highpowerandthermalcyclingcapability
• Highpowerdensity
• Standardhousing
• 高功率循环和温度循环能力
• 高功率密度
• 标准封装
ModuleLabelCode
BarcodeCode128
DMX-Code
preparedby:WB
dateofpublication:2016-03-09
approvedby:IB
revision:V3.1
1
ContentoftheCode
Digit
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
1-5
6-11
12-19
20-21
22-23
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FF800R17KP4_B2
IGBT,逆变器/IGBT,Inverter
最大额定值/MaximumRatedValues
集电极-发射极电压
Collector-emittervoltage
Tvj = 25°C
VCES
1700
V
连续集电极直流电流
ContinuousDCcollectorcurrent
TC = 80°C, Tvj max = 150°C
TC = 25°C, Tvj max = 150°C
IC nom
IC
800
1200
集电极重复峰值电流
Repetitivepeakcollectorcurrent
tP = 1 ms
ICRM
1600
A
总功率损耗
Totalpowerdissipation
TC = 25°C, Tvj max = 150°C
Ptot
4,85
kW
VGES
+/-20
V
栅极-发射极峰值电压
Gate-emitterpeakvoltage
特征值/CharacteristicValues
集电极-发射极饱和电压
Collector-emittersaturationvoltage
min.
IC = 800 A, VGE = 15 V
IC = 800 A, VGE = 15 V
IC = 800 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
VCE sat
A
A
typ.
max.
1,80
2,10
2,20
2,20
2,60
2,70
V
V
V
5,80
6,40
V
栅极阈值电压
Gatethresholdvoltage
IC = 32,0 mA, VCE = VGE, Tvj = 25°C
栅极电荷
Gatecharge
VGE = -15 V ... +15 V
QG
8,30
µC
内部栅极电阻
Internalgateresistor
Tvj = 25°C
RGint
1,9
Ω
输入电容
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cies
65,0
nF
反向传输电容
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cres
2,10
nF
集电极-发射极截止电流
Collector-emittercut-offcurrent
VCE = 1700 V, VGE = 0 V, Tvj = 25°C
ICES
5,0
mA
栅极-发射极漏电流
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
IGES
400
nA
VGEth
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload
IC = 800 A, VCE = 900 V
VGE = ±15 V
RGon = 0,8 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
上升时间(电感负载)
Risetime,inductiveload
IC = 800 A, VCE = 900 V
VGE = ±15 V
RGon = 0,8 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload
IC = 800 A, VCE = 900 V
VGE = ±15 V
RGoff = 1,8 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
下降时间(电感负载)
Falltime,inductiveload
IC = 800 A, VCE = 900 V
VGE = ±15 V
RGoff = 1,8 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
开通损耗能量(每脉冲)
Turn-onenergylossperpulse
IC = 800 A, VCE = 900 V, LS = 50 nH
VGE = ±15 V
RGon = 0,8 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
关断损耗能量(每脉冲)
Turn-offenergylossperpulse
5,20
0,59
0,63
0,64
µs
µs
µs
0,14
0,16
0,16
µs
µs
µs
1,00
1,15
1,15
µs
µs
µs
0,32
0,50
0,55
µs
µs
µs
Eon
145
215
245
mJ
mJ
mJ
IC = 800 A, VCE = 900 V, LS = 50 nH
Tvj = 25°C
VGE = ±15 V, du/dt = 3300 V/µs (Tvj = 150°C) Tvj = 125°C
RGoff = 1,8 Ω
Tvj = 150°C
Eoff
255
330
365
mJ
mJ
mJ
短路数据
SCdata
VGE ≤ 15 V, VCC = 1000 V
VCEmax = VCES -LsCE ·di/dt
ISC
3400
A
结-外壳热阻
Thermalresistance,junctiontocase
每个IGBT/perIGBT
RthJC
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个IGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
在开关状态下温度
Temperatureunderswitchingconditions
tP ≤ 10 µs, Tvj = 150°C
td on
tr
td off
tf
Tvj op
preparedby:WB
dateofpublication:2016-03-09
approvedby:IB
revision:V3.1
2
25,7 K/kW
22,8
-40
K/kW
150
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FF800R17KP4_B2
二极管,逆变器/Diode,Inverter
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 25°C
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
tP = 1 ms
I2t-值
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C
最大损耗功率
Maximumpowerdissipation
Tvj = 125°C
最小开通时间
Minimumturn-ontime
VRRM 1700
V
IF
800
A
IFRM
1600
A
I²t
240
210
PRQM 1200
kW
ton min 10,0
µs
特征值/CharacteristicValues
min.
kA²s
kA²s
typ.
max.
VF
1,55
1,60
1,65
2,00
2,05
2,10
IF = 800 A, - diF/dt = 5600 A/µs (Tvj=150°C) Tvj = 25°C
VR = 900 V
Tvj = 125°C
VGE = -15 V
Tvj = 150°C
IRM
1000
1150
1200
A
A
A
恢复电荷
Recoveredcharge
IF = 800 A, - diF/dt = 5600 A/µs (Tvj=150°C) Tvj = 25°C
VR = 900 V
Tvj = 125°C
VGE = -15 V
Tvj = 150°C
Qr
240
410
450
µC
µC
µC
反向恢复损耗(每脉冲)
Reverserecoveryenergy
IF = 800 A, - diF/dt = 5600 A/µs (Tvj=150°C) Tvj = 25°C
VR = 900 V
Tvj = 125°C
VGE = -15 V
Tvj = 150°C
Erec
160
280
325
mJ
mJ
mJ
结-外壳热阻
Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
正向电压
Forwardvoltage
IF = 800 A, VGE = 0 V
IF = 800 A, VGE = 0 V
IF = 800 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
反向恢复峰值电流
Peakreverserecoverycurrent
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
preparedby:WB
dateofpublication:2016-03-09
approvedby:IB
revision:V3.1
3
V
V
V
36,8 K/kW
30,0
-40
K/kW
150
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FF800R17KP4_B2
模块/Module
绝缘测试电压
Isolationtestvoltage
RMS, f = 50 Hz, t = 1 min.
VISOL 模块基板材料
Materialofmodulebaseplate
kV
4,0
AlSiC
内部绝缘
Internalisolation
基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140)
AlN
爬电距离
Creepagedistance
端子至散热器/terminaltoheatsink
端子至端子/terminaltoterminal
15,0
15,0
mm
电气间隙
Clearance
端子至散热器/terminaltoheatsink
端子至端子/terminaltoterminal
10,0
10,0
mm
> 250
相对电痕指数
Comperativetrackingindex
CTI
min.
杂散电感,模块
Strayinductancemodule
模块引线电阻,端子-芯片
Moduleleadresistance,terminals-chip
TC=25°C,每个开关/perswitch
储存温度
Storagetemperature
20
nH
RCC'+EE'
0,33
mΩ
Tstg
-40
125
°C
4,25
5,75
Nm
螺丝M6根据相应的应用手册进行安装
ScrewM6-Mountingaccordingtovalidapplicationnote
M
端子联接扭距
Terminalconnectiontorque
螺丝M4根据相应的应用手册进行安装
ScrewM4-Mountingaccordingtovalidapplicationnote
螺丝M8根据相应的应用手册进行安装
ScrewM8-Mountingaccordingtovalidapplicationnote
M
G
preparedby:WB
dateofpublication:2016-03-09
approvedby:IB
revision:V3.1
4
max.
LsCE
模块安装的安装扭距
Mountingtorqueformodulmounting
重量
Weight
typ.
1,8
-
2,1
Nm
8,0
-
10
Nm
1050
g
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FF800R17KP4_B2
输出特性IGBT,逆变器(典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
VGE=15V
输出特性IGBT,逆变器(典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
Tvj=150°C
1600
1600
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
1400
1400
1000
1000
IC [A]
1200
IC [A]
1200
800
800
600
600
400
400
200
200
0
0,0
0,5
VGE = 20 V
VGE = 15 V
VGE = 12 V
VGE = 10 V
VGE = 9 V
VGE = 8 V
1,0
1,5
2,0
VCE [V]
2,5
3,0
0
3,5
传输特性IGBT,逆变器(典型)
transfercharacteristicIGBT,Inverter(typical)
IC=f(VGE)
VCE=20V
0,0
0,5
1,0
1,5
2,0
2,5 3,0
VCE [V]
3,5
4,0
4,5
5,0
开关损耗IGBT,逆变器(典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(IC),Eoff=f(IC)
VGE=±15V,RGon=0.8Ω,RGoff=1.8Ω,VCE=900V
1600
800
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
1400
Eon, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 125°C
Eoff, Tvj = 150°C
750
700
650
1200
600
550
500
E [mJ]
IC [A]
1000
800
600
450
400
350
300
250
400
200
150
200
100
50
0
5
6
7
8
9
VGE [V]
10
11
12
0
13
preparedby:WB
dateofpublication:2016-03-09
approvedby:IB
revision:V3.1
5
0
200
400
600
800 1000 1200 1400 1600
IC [A]
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FF800R17KP4_B2
开关损耗IGBT,逆变器(典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=800A,VCE=900V
瞬态热阻抗IGBT,逆变器
transientthermalimpedanceIGBT,Inverter
ZthJC=f(t)
1100
100
Eon, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 125°C
Eoff, Tvj = 150°C
1000
ZthJC : IGBT
900
800
10
ZthJC [K/kW]
E [mJ]
700
600
500
1
400
300
i:
1
2
3
4
ri[K/kW]: 4,219 15,08 4,624 1,783
τi[s]:
0,002 0,045 0,539 6,941
200
100
0,1
0,001
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
RG [Ω]
反偏安全工作区IGBT,逆变器(RBSOA)
reversebiassafeoperatingareaIGBT,Inverter(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=1.8Ω,Tvj=150°C
0,1
t [s]
1
10
栅极电荷特性IGBT,逆变器(典型)
gatechargecharacteristicIGBT,Inverter(typical)
VGE=f(QG)
IC=800A,Tvj=25°C
2000
15
IC, Modul
IC, Chip
1800
VCC = 900 V
13
11
1600
9
7
1400
5
3
IC [A]
VGE [V]
1200
1000
800
1
-1
-3
-5
600
-7
400
-9
-11
200
0
0,01
-13
0
200
400
600
-15
800 1000 1200 1400 1600 1800
VCE [V]
preparedby:WB
dateofpublication:2016-03-09
approvedby:IB
revision:V3.1
6
0
1
2
3
4
5
QG [µC]
6
7
8
9
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FF800R17KP4_B2
正向偏压特性二极管,逆变器(典型)
forwardcharacteristicofDiode,Inverter(typical)
IF=f(VF)
开关损耗二极管,逆变器(典型)
switchinglossesDiode,Inverter(typical)
Erec=f(IF)
RGon=0.8Ω,VCE=900V
1600
450
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
1400
Erec, Tvj = 125°C
Erec, Tvj = 150°C
400
1000
300
E [mJ]
350
IF [A]
1200
800
250
600
200
400
150
200
100
0
50
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4
VF [V]
开关损耗二极管,逆变器(典型)
switchinglossesDiode,Inverter(typical)
Erec=f(RG)
IF=800A,VCE=900V
0
200
400
600
800 1000 1200 1400 1600
IF [A]
瞬态热阻抗二极管,逆变器
transientthermalimpedanceDiode,Inverter
ZthJC=f(t)
350
100
Erec, Tvj = 125°C
Erec, Tvj = 150°C
ZthJC : Diode
300
E [mJ]
ZthJC [K/kW]
250
200
10
150
i:
1
2
3
4
ri[K/kW]: 6,699 22,012 6,296 1,796
τi[s]:
0,002 0,05
0,427 7,014
100
0
1
2
3
4
RG [Ω]
5
6
7
1
0,001
8
preparedby:WB
dateofpublication:2016-03-09
approvedby:IB
revision:V3.1
7
0,01
0,1
t [s]
1
10
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FF800R17KP4_B2
安全工作区二极管,逆变器(SOA)
safeoperationareaDiode,Inverter(SOA)
IR=f(VR)
Tvj=150°C
1800
IR, Modul
1600
1400
1200
IR [A]
1000
800
600
400
200
0
0
200
400
600
800 1000 1200 1400 1600 1800
VR [V]
preparedby:WB
dateofpublication:2016-03-09
approvedby:IB
revision:V3.1
8
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FF800R17KP4_B2
接线图/Circuitdiagram
封装尺寸/Packageoutlines
preparedby:WB
dateofpublication:2016-03-09
approvedby:IB
revision:V3.1
9
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FF800R17KP4_B2
Publishedby
InfineonTechnologiesAG
81726München,Germany
©InfineonTechnologiesAG2015.
AllRightsReserved.
使用条件和条款
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preparedby:WB
dateofpublication:2016-03-09
approvedby:IB
revision:V3.1
10
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