English/Chinese (simplified)

技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF1200R17KE3_B2
初步数据
PreliminaryData
IGBT,逆变器/IGBT,Inverter
最大额定值/MaximumRatedValues
集电极-发射极电压
Collector-emittervoltage
Tvj = 25°C
VCES
1700
V
连续集电极直流电流
ContinuousDCcollectorcurrent
TC = 80°C, Tvj max = 150°C
TC = 25°C, Tvj max = 150°C
IC nom
IC
1200
1700
集电极重复峰值电流
Repetitivepeakcollectorcurrent
tP = 1 ms
ICRM
2400
A
总功率损耗
Totalpowerdissipation
TC = 25°C, Tvj max = 150°C
Ptot
6,60
kW
栅极-发射极峰值电压
Gate-emitterpeakvoltage
VGES
+/-20
V
特征值/CharacteristicValues
min.
集电极-发射极饱和电压
Collector-emittersaturationvoltage
IC = 1200 A, VGE = 15 V
IC = 1200 A, VGE = 15 V
栅极阈值电压
Gatethresholdvoltage
IC = 48,0 mA, VCE = VGE, Tvj = 25°C
栅极电荷
Gatecharge
Tvj = 25°C
Tvj = 125°C
VCE sat
A
A
typ.
max.
2,00
2,40
2,45
V
V
VGEth
5,2
5,8
6,4
V
VGE = -15 V ... +15 V
QG
14,0
µC
内部栅极电阻
Internalgateresistor
Tvj = 25°C
RGint
1,6
Ω
输入电容
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cies
110
nF
反向传输电容
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cres
3,50
nF
集电极-发射极截止电流
Collector-emittercut-offcurrent
VCE = 1700 V, VGE = 0 V, Tvj = 25°C
ICES
5,0
mA
栅极-发射极漏电流
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
IGES
400
nA
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload
IC = 1200 A, VCE = 900 V
VGE = ±15 V
RGon = 1,2 Ω
Tvj = 25°C
Tvj = 125°C
td on
0,74
0,80
µs
µs
上升时间(电感负载)
Risetime,inductiveload
IC = 1200 A, VCE = 900 V
VGE = ±15 V
RGon = 1,2 Ω
Tvj = 25°C
Tvj = 125°C
tr
0,20
0,25
µs
µs
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload
IC = 1200 A, VCE = 900 V
VGE = ±15 V
RGoff = 1,5 Ω
Tvj = 25°C
Tvj = 125°C
td off
1,45
1,80
µs
µs
下降时间(电感负载)
Falltime,inductiveload
IC = 1200 A, VCE = 900 V
VGE = ±15 V
RGoff = 1,5 Ω
Tvj = 25°C
Tvj = 125°C
tf
0,18
0,30
µs
µs
开通损耗能量(每脉冲)
Turn-onenergylossperpulse
IC = 1200 A, VCE = 900 V, LS = 50 nH
VGE = ±15 V
RGon = 1,2 Ω
Tvj = 25°C
Tvj = 125°C
Eon
240
350
mJ
mJ
关断损耗能量(每脉冲)
Turn-offenergylossperpulse
IC = 1200 A, VCE = 900 V, LS = 50 nH
VGE = ±15 V
RGoff = 1,5 Ω
Tvj = 25°C
Tvj = 125°C
Eoff
305
445
mJ
mJ
短路数据
SCdata
VGE ≤ 15 V, VCC = 1000 V
VCEmax = VCES -LsCE ·di/dt
ISC
结-外壳热阻
Thermalresistance,junctiontocase
每个IGBT/perIGBT
RthJC
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个IGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
23,0
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
preparedby:WB
dateofpublication:2013-11-25
approvedby:PL
revision:2.1
1
tP ≤ 10 µs, Tvj = 125°C
4800
A
19,0 K/kW
K/kW
125
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF1200R17KE3_B2
初步数据
PreliminaryData
二极管,逆变器/Diode,Inverter
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 25°C
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
tP = 1 ms
I2t-值
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VRRM 1700
V
IF
1200
A
IFRM
2400
A
I²t
240
kA²s
特征值/CharacteristicValues
min.
typ.
max.
1,80
1,90
2,20
正向电压
Forwardvoltage
IF = 1200 A, VGE = 0 V
IF = 1200 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
VF
反向恢复峰值电流
Peakreverserecoverycurrent
IF = 1200 A, - diF/dt = 7000 A/µs (Tvj=125°C) Tvj = 25°C
VR = 900 V
Tvj = 125°C
VGE = -15 V
IRM
1150
1250
A
A
恢复电荷
Recoveredcharge
IF = 1200 A, - diF/dt = 7000 A/µs (Tvj=125°C) Tvj = 25°C
VR = 900 V
Tvj = 125°C
VGE = -15 V
Qr
305
510
µC
µC
反向恢复损耗(每脉冲)
Reverserecoveryenergy
IF = 1200 A, - diF/dt = 7000 A/µs (Tvj=125°C) Tvj = 25°C
VR = 900 V
Tvj = 125°C
VGE = -15 V
Erec
190
340
mJ
mJ
结-外壳热阻
Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
52,0
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
preparedby:WB
dateofpublication:2013-11-25
approvedby:PL
revision:2.1
2
V
V
42,0 K/kW
K/kW
125
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF1200R17KE3_B2
初步数据
PreliminaryData
模块/Module
绝缘测试电压
Isolationtestvoltage
RMS, f = 50 Hz, t = 1 min.
模块基板材料
Materialofmodulebaseplate
AlSiC
内部绝缘
Internalisolation
基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140)
AlN
爬电距离
Creepagedistance
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
15,0
15,0
mm
电气间隙
Clearance
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
10,0
10,0
mm
相对电痕指数
Comperativetrackingindex
CTI
> 250
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个模块/permodule
λPaste=1W/(m·K)/λgrease=1W/(m·K)
杂散电感,模块
Strayinductancemodule
模块引线电阻,端子-芯片
Moduleleadresistance,terminals-chip
TC=25°C,每个开关/perswitch
储存温度
Storagetemperature
模块安装的安装扭距
Mountingtorqueformodulmounting
端子联接扭距
Terminalconnectiontorque
VISOL kV
4,0
min.
typ.
RthCH
8,00
LsCE
20
nH
RCC'+EE'
0,37
mΩ
Tstg
-40
125
°C
螺丝M6根据相应的应用手册进行安装
ScrewM6-Mountingaccordingtovalidapplicationnote
M
4,25
-
5,75
Nm
螺丝M4根据相应的应用手册进行安装
ScrewM4-Mountingaccordingtovalidapplicationnote
螺丝M8根据相应的应用手册进行安装
ScrewM8-Mountingaccordingtovalidapplicationnote
1,8
-
2,1
Nm
M
8,0
-
10
Nm
重量
Weight
G
1050
g
preparedby:WB
dateofpublication:2013-11-25
approvedby:PL
revision:2.1
3
max.
K/kW
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF1200R17KE3_B2
初步数据
PreliminaryData
输出特性IGBT,逆变器(典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
VGE=15V
输出特性IGBT,逆变器(典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
Tvj=125°C
2400
2400
Tvj = 25°C
Tvj = 125°C
2200
1800
1800
1600
1600
1400
1400
IC [A]
2000
IC [A]
2000
1200
1200
1000
1000
800
800
600
600
400
400
200
200
0
VGE = 20V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9V
VGE = 8V
2200
0,0
0,5
1,0
1,5
2,0
VCE [V]
2,5
3,0
3,5
0
4,0
传输特性IGBT,逆变器(典型)
transfercharacteristicIGBT,Inverter(typical)
IC=f(VGE)
VCE=20V
0,0
0,5
1,0
1,5
2,0
2,5 3,0
VCE [V]
3,5
4,0
4,5
5,0
开关损耗IGBT,逆变器(典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(IC),Eoff=f(IC)
VGE=±15V,RGon=1.2Ω,RGoff=1.5Ω,VCE=900V
2400
1000
Tvj = 25°C
Tvj = 125°C
2200
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
900
2000
800
1800
700
1600
600
IC [A]
E [mJ]
1400
1200
1000
500
400
800
300
600
200
400
100
200
0
5
6
7
8
9
VGE [V]
10
11
12
0
13
preparedby:WB
dateofpublication:2013-11-25
approvedby:PL
revision:2.1
4
0
400
800
1200
IC [A]
1600
2000
2400
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF1200R17KE3_B2
初步数据
PreliminaryData
开关损耗IGBT,逆变器(典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=1200A,VCE=900V
瞬态热阻抗IGBT,逆变器
transientthermalimpedanceIGBT,Inverter
ZthJC=f(t)
2000
100
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
1800
ZthJC : IGBT
1600
1400
10
E [mJ]
ZthJC [K/kW]
1200
1000
800
1
600
400
i:
1
2
3
4
ri[K/kW]: 3,8 3,8 7,6 3,8
τi[s]:
0,01 0,04 0,09 0,2
200
0
0
1
2
3
4
5
6
7
RG [Ω]
8
9
0,1
0,001
10 11 12
反偏安全工作区IGBT,逆变器(RBSOA)
reversebiassafeoperatingareaIGBT,Inverter(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=1.5Ω,Tvj=125°C
0,1
t [s]
1
10
正向偏压特性二极管,逆变器(典型)
forwardcharacteristicofDiode,Inverter(typical)
IF=f(VF)
2600
2400
IC, Modul
IC, Chip
2400
Tvj = 25°C
Tvj = 125°C
2200
2200
2000
2000
1800
1800
1600
1600
1400
IF [A]
IC [A]
1400
1200
1200
1000
1000
800
800
600
600
400
400
200
200
0
0,01
0
200
400
600
0
800 1000 1200 1400 1600 1800
VCE [V]
preparedby:WB
dateofpublication:2013-11-25
approvedby:PL
revision:2.1
5
0,0
0,5
1,0
1,5
VF [V]
2,0
2,5
3,0
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF1200R17KE3_B2
初步数据
PreliminaryData
开关损耗二极管,逆变器(典型)
switchinglossesDiode,Inverter(typical)
Erec=f(IF)
RGon=1.2Ω,VCE=900V
开关损耗二极管,逆变器(典型)
switchinglossesDiode,Inverter(typical)
Erec=f(RG)
IF=1200A,VCE=900V
500
400
Erec, Tvj = 125°C
Erec, Tvj = 125°C
375
450
350
400
325
350
300
275
E [mJ]
E [mJ]
300
250
250
225
200
200
150
175
100
150
50
0
125
0
400
800
1200
IF [A]
1600
2000
100
2400
瞬态热阻抗二极管,逆变器
transientthermalimpedanceDiode,Inverter
ZthJC=f(t)
100
ZthJC [K/kW]
ZthJC : Diode
10
i:
1
2
3
4
ri[K/kW]: 8,4 8,4 16,8 8,4
τi[s]:
0,01 0,04 0,09 0,2
1
0,001
0,01
0,1
t [s]
1
10
preparedby:WB
dateofpublication:2013-11-25
approvedby:PL
revision:2.1
6
0
1
2
3
4
5
6
7
RG [Ω]
8
9
10 11 12
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF1200R17KE3_B2
初步数据
PreliminaryData
接线图/circuit_diagram_headline
封装尺寸/packageoutlines
preparedby:WB
dateofpublication:2013-11-25
approvedby:PL
revision:2.1
7
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF1200R17KE3_B2
初步数据
PreliminaryData
使用条件和条款
使用条件和条款
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Terms&Conditionsofusage
Thedatacontainedinthisproductdatasheetisexclusivelyintendedfortechnicallytrainedstaff.Youandyourtechnicaldepartmentswill
havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch
application.
Thisproductdatasheetisdescribingthecharacteristicsofthisproductforwhichawarrantyisgranted.Anysuchwarrantyisgranted
exclusivelypursuantthetermsandconditionsofthesupplyagreement.Therewillbenoguaranteeofanykindfortheproductandits
characteristics.Theinformationinthevalidapplication-andassemblynotesofthemodulemustbeconsidered.
Shouldyourequireproductinformationinexcessofthedatagiveninthisproductdatasheetorwhichconcernsthespecificapplicationof
ourproduct,pleasecontactthesalesoffice,whichisresponsibleforyou(seewww.infineon.com).Forthosethatarespecifically
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ShouldyouintendtousetheProductinaviationapplications,inhealthorliveendangeringorlifesupportapplications,pleasenotify.Please
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preparedby:WB
dateofpublication:2013-11-25
approvedby:PL
revision:2.1
8
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