技术信息/TechnicalInformation IGBT-模块 IGBT-modules FF1200R17KE3_B2 初步数据 PreliminaryData IGBT,逆变器/IGBT,Inverter 最大额定值/MaximumRatedValues 集电极－发射极电压 Collector-emittervoltage Tvj = 25°C VCES 1700 V 连续集电极直流电流 ContinuousDCcollectorcurrent TC = 80°C, Tvj max = 150°C TC = 25°C, Tvj max = 150°C IC nom IC 1200 1700 集电极重复峰值电流 Repetitivepeakcollectorcurrent tP = 1 ms ICRM 2400 A 总功率损耗 Totalpowerdissipation TC = 25°C, Tvj max = 150°C Ptot 6,60 kW 栅极－发射极峰值电压 Gate-emitterpeakvoltage VGES +/-20 V 特征值/CharacteristicValues min. 集电极－发射极饱和电压 Collector-emittersaturationvoltage IC = 1200 A, VGE = 15 V IC = 1200 A, VGE = 15 V 栅极阈值电压 Gatethresholdvoltage IC = 48,0 mA, VCE = VGE, Tvj = 25°C 栅极电荷 Gatecharge Tvj = 25°C Tvj = 125°C VCE sat A A typ. max. 2,00 2,40 2,45 V V VGEth 5,2 5,8 6,4 V VGE = -15 V ... +15 V QG 14,0 µC 内部栅极电阻 Internalgateresistor Tvj = 25°C RGint 1,6 Ω 输入电容 Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 110 nF 反向传输电容 Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 3,50 nF 集电极-发射极截止电流 Collector-emittercut-offcurrent VCE = 1700 V, VGE = 0 V, Tvj = 25°C ICES 5,0 mA 栅极-发射极漏电流 Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 400 nA 开通延迟时间(电感负载) Turn-ondelaytime,inductiveload IC = 1200 A, VCE = 900 V VGE = ±15 V RGon = 1,2 Ω Tvj = 25°C Tvj = 125°C td on 0,74 0,80 µs µs 上升时间(电感负载) Risetime,inductiveload IC = 1200 A, VCE = 900 V VGE = ±15 V RGon = 1,2 Ω Tvj = 25°C Tvj = 125°C tr 0,20 0,25 µs µs 关断延迟时间(电感负载) Turn-offdelaytime,inductiveload IC = 1200 A, VCE = 900 V VGE = ±15 V RGoff = 1,5 Ω Tvj = 25°C Tvj = 125°C td off 1,45 1,80 µs µs 下降时间(电感负载) Falltime,inductiveload IC = 1200 A, VCE = 900 V VGE = ±15 V RGoff = 1,5 Ω Tvj = 25°C Tvj = 125°C tf 0,18 0,30 µs µs 开通损耗能量(每脉冲) Turn-onenergylossperpulse IC = 1200 A, VCE = 900 V, LS = 50 nH VGE = ±15 V RGon = 1,2 Ω Tvj = 25°C Tvj = 125°C Eon 240 350 mJ mJ 关断损耗能量(每脉冲） Turn-offenergylossperpulse IC = 1200 A, VCE = 900 V, LS = 50 nH VGE = ±15 V RGoff = 1,5 Ω Tvj = 25°C Tvj = 125°C Eoff 305 445 mJ mJ 短路数据 SCdata VGE ≤ 15 V, VCC = 1000 V VCEmax = VCES -LsCE ·di/dt ISC 结－外壳热阻 Thermalresistance,junctiontocase 每个IGBT/perIGBT RthJC 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个IGBT/perIGBT λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 23,0 在开关状态下温度 Temperatureunderswitchingconditions Tvj op -40 preparedby:WB dateofpublication:2013-11-25 approvedby:PL revision:2.1 1 tP ≤ 10 µs, Tvj = 125°C 4800 A 19,0 K/kW K/kW 125 °C 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FF1200R17KE3_B2 初步数据 PreliminaryData 二极管,逆变器/Diode,Inverter 最大额定值/MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage Tvj = 25°C 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent tP = 1 ms I2t-值 I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C VRRM 1700 V IF 1200 A IFRM 2400 A I²t 240 kA²s 特征值/CharacteristicValues min. typ. max. 1,80 1,90 2,20 正向电压 Forwardvoltage IF = 1200 A, VGE = 0 V IF = 1200 A, VGE = 0 V Tvj = 25°C Tvj = 125°C VF 反向恢复峰值电流 Peakreverserecoverycurrent IF = 1200 A, - diF/dt = 7000 A/µs (Tvj=125°C) Tvj = 25°C VR = 900 V Tvj = 125°C VGE = -15 V IRM 1150 1250 A A 恢复电荷 Recoveredcharge IF = 1200 A, - diF/dt = 7000 A/µs (Tvj=125°C) Tvj = 25°C VR = 900 V Tvj = 125°C VGE = -15 V Qr 305 510 µC µC 反向恢复损耗（每脉冲） Reverserecoveryenergy IF = 1200 A, - diF/dt = 7000 A/µs (Tvj=125°C) Tvj = 25°C VR = 900 V Tvj = 125°C VGE = -15 V Erec 190 340 mJ mJ 结－外壳热阻 Thermalresistance,junctiontocase 每个二极管/perdiode RthJC 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个二极管/perdiode λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 52,0 在开关状态下温度 Temperatureunderswitchingconditions Tvj op -40 preparedby:WB dateofpublication:2013-11-25 approvedby:PL revision:2.1 2 V V 42,0 K/kW K/kW 125 °C 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FF1200R17KE3_B2 初步数据 PreliminaryData 模块/Module 绝缘测试电压 Isolationtestvoltage RMS, f = 50 Hz, t = 1 min. 模块基板材料 Materialofmodulebaseplate AlSiC 内部绝缘 Internalisolation 基本绝缘(class1,IEC61140) basicinsulation(class1,IEC61140) AlN 爬电距离 Creepagedistance 端子-散热片/terminaltoheatsink 端子-端子/terminaltoterminal 15,0 15,0 mm 电气间隙 Clearance 端子-散热片/terminaltoheatsink 端子-端子/terminaltoterminal 10,0 10,0 mm 相对电痕指数 Comperativetrackingindex CTI > 250 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个模块/permodule λPaste=1W/(m·K)/λgrease=1W/(m·K) 杂散电感,模块 Strayinductancemodule 模块引线电阻,端子-芯片 Moduleleadresistance,terminals-chip TC=25°C,每个开关/perswitch 储存温度 Storagetemperature 模块安装的安装扭距 Mountingtorqueformodulmounting 端子联接扭距 Terminalconnectiontorque VISOL kV 4,0 min. typ. RthCH 8,00 LsCE 20 nH RCC'+EE' 0,37 mΩ Tstg -40 125 °C 螺丝M6根据相应的应用手册进行安装 ScrewM6-Mountingaccordingtovalidapplicationnote M 4,25 - 5,75 Nm 螺丝M4根据相应的应用手册进行安装 ScrewM4-Mountingaccordingtovalidapplicationnote 螺丝M8根据相应的应用手册进行安装 ScrewM8-Mountingaccordingtovalidapplicationnote 1,8 - 2,1 Nm M 8,0 - 10 Nm 重量 Weight G 1050 g preparedby:WB dateofpublication:2013-11-25 approvedby:PL revision:2.1 3 max. K/kW 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FF1200R17KE3_B2 初步数据 PreliminaryData 输出特性IGBT,逆变器（典型) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) VGE=15V 输出特性IGBT,逆变器（典型) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) Tvj=125°C 2400 2400 Tvj = 25°C Tvj = 125°C 2200 1800 1800 1600 1600 1400 1400 IC [A] 2000 IC [A] 2000 1200 1200 1000 1000 800 800 600 600 400 400 200 200 0 VGE = 20V VGE = 15V VGE = 12V VGE = 10V VGE = 9V VGE = 8V 2200 0,0 0,5 1,0 1,5 2,0 VCE [V] 2,5 3,0 3,5 0 4,0 传输特性IGBT,逆变器(典型) transfercharacteristicIGBT,Inverter(typical) IC=f(VGE) VCE=20V 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VCE [V] 3,5 4,0 4,5 5,0 开关损耗IGBT,逆变器（典型) switchinglossesIGBT,Inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=±15V,RGon=1.2Ω,RGoff=1.5Ω,VCE=900V 2400 1000 Tvj = 25°C Tvj = 125°C 2200 Eon, Tvj = 125°C Eoff, Tvj = 125°C 900 2000 800 1800 700 1600 600 IC [A] E [mJ] 1400 1200 1000 500 400 800 300 600 200 400 100 200 0 5 6 7 8 9 VGE [V] 10 11 12 0 13 preparedby:WB dateofpublication:2013-11-25 approvedby:PL revision:2.1 4 0 400 800 1200 IC [A] 1600 2000 2400 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FF1200R17KE3_B2 初步数据 PreliminaryData 开关损耗IGBT,逆变器（典型) switchinglossesIGBT,Inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=±15V,IC=1200A,VCE=900V 瞬态热阻抗IGBT,逆变器 transientthermalimpedanceIGBT,Inverter ZthJC=f(t) 2000 100 Eon, Tvj = 125°C Eoff, Tvj = 125°C 1800 ZthJC : IGBT 1600 1400 10 E [mJ] ZthJC [K/kW] 1200 1000 800 1 600 400 i: 1 2 3 4 ri[K/kW]: 3,8 3,8 7,6 3,8 τi[s]: 0,01 0,04 0,09 0,2 200 0 0 1 2 3 4 5 6 7 RG [Ω] 8 9 0,1 0,001 10 11 12 反偏安全工作区IGBT,逆变器（RBSOA） reversebiassafeoperatingareaIGBT,Inverter(RBSOA) IC=f(VCE) VGE=±15V,RGoff=1.5Ω,Tvj=125°C 0,1 t [s] 1 10 正向偏压特性二极管,逆变器（典型) forwardcharacteristicofDiode,Inverter(typical) IF=f(VF) 2600 2400 IC, Modul IC, Chip 2400 Tvj = 25°C Tvj = 125°C 2200 2200 2000 2000 1800 1800 1600 1600 1400 IF [A] IC [A] 1400 1200 1200 1000 1000 800 800 600 600 400 400 200 200 0 0,01 0 200 400 600 0 800 1000 1200 1400 1600 1800 VCE [V] preparedby:WB dateofpublication:2013-11-25 approvedby:PL revision:2.1 5 0,0 0,5 1,0 1,5 VF [V] 2,0 2,5 3,0 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FF1200R17KE3_B2 初步数据 PreliminaryData 开关损耗二极管,逆变器（典型) switchinglossesDiode,Inverter(typical) Erec=f(IF) RGon=1.2Ω,VCE=900V 开关损耗二极管,逆变器（典型) switchinglossesDiode,Inverter(typical) Erec=f(RG) IF=1200A,VCE=900V 500 400 Erec, Tvj = 125°C Erec, Tvj = 125°C 375 450 350 400 325 350 300 275 E [mJ] E [mJ] 300 250 250 225 200 200 150 175 100 150 50 0 125 0 400 800 1200 IF [A] 1600 2000 100 2400 瞬态热阻抗二极管,逆变器 transientthermalimpedanceDiode,Inverter ZthJC=f(t) 100 ZthJC [K/kW] ZthJC : Diode 10 i: 1 2 3 4 ri[K/kW]: 8,4 8,4 16,8 8,4 τi[s]: 0,01 0,04 0,09 0,2 1 0,001 0,01 0,1 t [s] 1 10 preparedby:WB dateofpublication:2013-11-25 approvedby:PL revision:2.1 6 0 1 2 3 4 5 6 7 RG [Ω] 8 9 10 11 12 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FF1200R17KE3_B2 初步数据 PreliminaryData 接线图/circuit_diagram_headline 封装尺寸/packageoutlines preparedby:WB dateofpublication:2013-11-25 approvedby:PL revision:2.1 7 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FF1200R17KE3_B2 初步数据 PreliminaryData 使用条件和条款 使用条件和条款 产品规格书中的数据是专门为技术人员提供的，您和您的技术部门应该针对您的应用来评估产品及产品的所有参数是否适合 产品规格书中所描述的产品特性是被保证的，任何这种保证严格依照供货协议中所涉及的条件和条款。除此之外，产品和产品的特性没有任何的保证 请注意安装及应用指南中的信息。 如果您有超出规格书所提供的产品信息的要求或者对我们的产品针对的特殊应用有疑虑的话，请联系我们负责你的销售部门（详情查询 www.infineon.com）。对那些特别感兴趣的问题我们将提供相应的应用手册 由于技术需要，我们的产品可能含有危险物质。如果需要查询类似问题请联系我们负责你的销售部门 如果您想将我们的产品用于航天，健康，危及生命或者生命维持等应用，请申明。 请注意，对这类应用我们强烈建议 -执行联合的风险和质量评估 -得到质量协议的结论 -建立联合的测试和出厂产品检查，我们可以根据测试的实际情况供货 如果有必要，请根据实际需要将类似的说明给你的客户 保留产品规格书的修改权 Terms&Conditionsofusage Thedatacontainedinthisproductdatasheetisexclusivelyintendedfortechnicallytrainedstaff.Youandyourtechnicaldepartmentswill havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch application. Thisproductdatasheetisdescribingthecharacteristicsofthisproductforwhichawarrantyisgranted.Anysuchwarrantyisgranted exclusivelypursuantthetermsandconditionsofthesupplyagreement.Therewillbenoguaranteeofanykindfortheproductandits characteristics.Theinformationinthevalidapplication-andassemblynotesofthemodulemustbeconsidered. Shouldyourequireproductinformationinexcessofthedatagiveninthisproductdatasheetorwhichconcernsthespecificapplicationof ourproduct,pleasecontactthesalesoffice,whichisresponsibleforyou(seewww.infineon.com).Forthosethatarespecifically interestedwemayprovideapplicationnotes. Duetotechnicalrequirementsourproductmaycontaindangeroussubstances.Forinformationonthetypesinquestionpleasecontactthe salesoffice,whichisresponsibleforyou. ShouldyouintendtousetheProductinaviationapplications,inhealthorliveendangeringorlifesupportapplications,pleasenotify.Please note,thatforanysuchapplicationsweurgentlyrecommend -toperformjointRiskandQualityAssessments; -theconclusionofQualityAgreements; -toestablishjointmeasuresofanongoingproductsurvey,andthatwemaymakedeliverydependedon therealizationofanysuchmeasures. Ifandtotheextentnecessary,pleaseforwardequivalentnoticestoyourcustomers. Changesofthisproductdatasheetarereserved. preparedby:WB dateofpublication:2013-11-25 approvedby:PL revision:2.1 8