Chinese (simplified)/English

技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FF1200R17KP4_B2
IHM-A模块采用第四代沟槽栅/场终止IGBT4和第三代发射极控制二极管
IHM-AmodulewithTrench/FieldstopIGBT4andEmitterControlled3diode
VCES = 1700V
IC nom = 1200A / ICRM = 2400A
典型应用
• 大功率变流器
• 中压变流器
• 电机传动
• 牵引变流器
• 风力发电机
TypicalApplications
• Highpowerconverters
• Mediumvoltageconverters
• Motordrives
• Tractiondrives
• Windturbines
电气特性
• 提高工作结温Tvjop
• 低VCEsat
• Tvjop=150°C
• 增大的二极管针对反馈运行模式
ElectricalFeatures
• ExtendedoperatingtemperatureTvjop
• LowVCEsat
• Tvjop=150°C
• Enlargeddiodeforregenerativeoperation
机械特性
• 4kV交流1分钟绝缘
• 碳化硅铝(AlSiC)基板提供更高的温度循环能力
MechanicalFeatures
• 4kVAC1mininsulation
• AlSiC base plate for increased thermal cycling
capability
• Highpowerandthermalcyclingcapability
• Highpowerdensity
• Standardhousing
• 高功率循环和温度循环能力
• 高功率密度
• 标准封装
ModuleLabelCode
BarcodeCode128
DMX-Code
preparedby:WB
dateofpublication:2016-03-09
approvedby:IB
revision:V3.1
1
ContentoftheCode
Digit
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
1-5
6-11
12-19
20-21
22-23
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FF1200R17KP4_B2
IGBT,逆变器/IGBT,Inverter
最大额定值/MaximumRatedValues
集电极-发射极电压
Collector-emittervoltage
Tvj = 25°C
VCES
1700
V
连续集电极直流电流
ContinuousDCcollectorcurrent
TC = 80°C, Tvj max = 150°C
TC = 25°C, Tvj max = 150°C
IC nom
IC
1200
1700
集电极重复峰值电流
Repetitivepeakcollectorcurrent
tP = 1 ms
ICRM
2400
A
总功率损耗
Totalpowerdissipation
TC = 25°C, Tvj max = 150°C
Ptot
6,25
kW
VGES
+/-20
V
栅极-发射极峰值电压
Gate-emitterpeakvoltage
特征值/CharacteristicValues
集电极-发射极饱和电压
Collector-emittersaturationvoltage
min.
IC = 1200 A, VGE = 15 V
IC = 1200 A, VGE = 15 V
IC = 1200 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
VCE sat
A
A
typ.
max.
1,80
2,10
2,20
2,20
2,60
2,70
V
V
V
5,80
6,40
V
栅极阈值电压
Gatethresholdvoltage
IC = 48,0 mA, VCE = VGE, Tvj = 25°C
栅极电荷
Gatecharge
VGE = -15 V ... +15 V
QG
12,5
µC
内部栅极电阻
Internalgateresistor
Tvj = 25°C
RGint
1,6
Ω
输入电容
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cies
98,0
nF
反向传输电容
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cres
3,15
nF
集电极-发射极截止电流
Collector-emittercut-offcurrent
VCE = 1700 V, VGE = 0 V, Tvj = 25°C
ICES
5,0
mA
栅极-发射极漏电流
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
IGES
400
nA
VGEth
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload
IC = 1200 A, VCE = 900 V
VGE = ±15 V
RGon = 0,68 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
上升时间(电感负载)
Risetime,inductiveload
IC = 1200 A, VCE = 900 V
VGE = ±15 V
RGon = 0,68 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload
IC = 1200 A, VCE = 900 V
VGE = ±15 V
RGoff = 0,8 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
下降时间(电感负载)
Falltime,inductiveload
IC = 1200 A, VCE = 900 V
VGE = ±15 V
RGoff = 0,8 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
开通损耗能量(每脉冲)
Turn-onenergylossperpulse
IC = 1200 A, VCE = 900 V, LS = 50 nH
VGE = ±15 V
RGon = 0,68 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
关断损耗能量(每脉冲)
Turn-offenergylossperpulse
IC = 1200 A, VCE = 900 V, LS = 50 nH
VGE = ±15 V
RGoff = 0,8 Ω
短路数据
SCdata
VGE ≤ 15 V, VCC = 1000 V
VCEmax = VCES -LsCE ·di/dt
结-外壳热阻
Thermalresistance,junctiontocase
每个IGBT/perIGBT
RthJC
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个IGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
在开关状态下温度
Temperatureunderswitchingconditions
0,80
0,85
0,86
µs
µs
µs
0,19
0,20
0,20
µs
µs
µs
1,40
1,75
1,85
µs
µs
µs
0,28
0,48
0,53
µs
µs
µs
Eon
245
370
415
mJ
mJ
mJ
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Eoff
410
510
535
mJ
mJ
mJ
tP ≤ 10 µs, Tvj = 150°C
ISC
4800
A
td on
tr
td off
tf
Tvj op
preparedby:WB
dateofpublication:2016-03-09
approvedby:IB
revision:V3.1
2
5,20
20,0 K/kW
22,0
-40
K/kW
150
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FF1200R17KP4_B2
二极管,逆变器/Diode,Inverter
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 25°C
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
tP = 1 ms
I2t-值
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C
最大损耗功率
Maximumpowerdissipation
Tvj = 125°C
最小开通时间
Minimumturn-ontime
VRRM 1700
V
IF
1200
A
IFRM
2400
A
I²t
240
210
PRQM 1400
kW
ton min 10,0
µs
特征值/CharacteristicValues
min.
kA²s
kA²s
typ.
max.
VF
1,60
1,60
1,60
2,00
2,00
2,00
IF = 1200 A, - diF/dt = 6000 A/µs (Tvj=150°C) Tvj = 25°C
VR = 900 V
Tvj = 125°C
VGE = -15 V
Tvj = 150°C
IRM
1100
1300
1350
A
A
A
恢复电荷
Recoveredcharge
IF = 1200 A, - diF/dt = 6000 A/µs (Tvj=150°C) Tvj = 25°C
VR = 900 V
Tvj = 125°C
VGE = -15 V
Tvj = 150°C
Qr
290
500
585
µC
µC
µC
反向恢复损耗(每脉冲)
Reverserecoveryenergy
IF = 1200 A, - diF/dt = 6000 A/µs (Tvj=150°C) Tvj = 25°C
VR = 900 V
Tvj = 125°C
VGE = -15 V
Tvj = 150°C
Erec
190
330
390
mJ
mJ
mJ
结-外壳热阻
Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
正向电压
Forwardvoltage
IF = 1200 A, VGE = 0 V
IF = 1200 A, VGE = 0 V
IF = 1200 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
反向恢复峰值电流
Peakreverserecoverycurrent
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
preparedby:WB
dateofpublication:2016-03-09
approvedby:IB
revision:V3.1
3
V
V
V
32,0 K/kW
29,0
-40
K/kW
150
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FF1200R17KP4_B2
模块/Module
绝缘测试电压
Isolationtestvoltage
RMS, f = 50 Hz, t = 1 min.
VISOL 模块基板材料
Materialofmodulebaseplate
kV
4,0
AlSiC
内部绝缘
Internalisolation
基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140)
AlN
爬电距离
Creepagedistance
端子至散热器/terminaltoheatsink
端子至端子/terminaltoterminal
15,0
15,0
mm
电气间隙
Clearance
端子至散热器/terminaltoheatsink
端子至端子/terminaltoterminal
10,0
10,0
mm
> 250
相对电痕指数
Comperativetrackingindex
CTI
min.
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个模块/permodule
λPaste=1W/(m·K)/λgrease=1W/(m·K)
杂散电感,模块
Strayinductancemodule
模块引线电阻,端子-芯片
Moduleleadresistance,terminals-chip
TC=25°C,每个开关/perswitch
储存温度
Storagetemperature
8,00
K/kW
LsCE
20
nH
RCC'+EE'
0,33
mΩ
Tstg
-40
125
°C
4,25
5,75
Nm
螺丝M6根据相应的应用手册进行安装
ScrewM6-Mountingaccordingtovalidapplicationnote
M
端子联接扭距
Terminalconnectiontorque
螺丝M4根据相应的应用手册进行安装
ScrewM4-Mountingaccordingtovalidapplicationnote
螺丝M8根据相应的应用手册进行安装
ScrewM8-Mountingaccordingtovalidapplicationnote
M
G
preparedby:WB
dateofpublication:2016-03-09
approvedby:IB
revision:V3.1
4
max.
RthCH
模块安装的安装扭距
Mountingtorqueformodulmounting
重量
Weight
typ.
1,8
-
2,1
Nm
8,0
-
10
Nm
1050
g
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FF1200R17KP4_B2
输出特性IGBT,逆变器(典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
VGE=15V
输出特性IGBT,逆变器(典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
Tvj=150°C
2400
2400
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
2200
1800
1800
1600
1600
1400
1400
IC [A]
2000
IC [A]
2000
1200
1200
1000
1000
800
800
600
600
400
400
200
200
0
0,0
0,5
1,0
1,5
2,0
VCE [V]
2,5
3,0
0
3,5
传输特性IGBT,逆变器(典型)
transfercharacteristicIGBT,Inverter(typical)
IC=f(VGE)
VCE=20V
0,0
0,5
1,0
1,5
2,0
2,5 3,0
VCE [V]
3,5
4,0
4,5
5,0
开关损耗IGBT,逆变器(典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(IC),Eoff=f(IC)
VGE=±15V,RGon=0.68Ω,RGoff=0.8Ω,VCE=900V
2400
1200
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
2200
1800
900
1600
800
1400
700
IC [A]
E [mJ]
1000
1200
600
1000
500
800
400
600
300
400
200
200
100
5
6
7
Eon, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 125°C
Eoff, Tvj = 150°C
1100
2000
0
VGE = 20V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9V
VGE = 8V
2200
8
9
VGE [V]
10
11
12
0
13
preparedby:WB
dateofpublication:2016-03-09
approvedby:IB
revision:V3.1
5
0
400
800
1200
IC [A]
1600
2000
2400
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FF1200R17KP4_B2
开关损耗IGBT,逆变器(典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=1200A,VCE=900V
瞬态热阻抗IGBT,逆变器
transientthermalimpedanceIGBT,Inverter
ZthJC=f(t)
1400
100
Eon, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 125°C
Eoff, Tvj = 150°C
1300
1200
ZthJC : IGBT
1100
1000
10
900
ZthJC [K/kW]
E [mJ]
800
700
600
500
1
400
300
200
i:
1
2
3
4
ri[K/kW]: 2,873 10,79 4,148 1,762
τi[s]:
0,002 0,048 0,586 7,406
100
0
0,1
0,001
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0
RG [Ω]
反偏安全工作区IGBT,逆变器(RBSOA)
reversebiassafeoperatingareaIGBT,Inverter(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=0.8Ω,Tvj=150°C
0,1
t [s]
1
10
栅极电荷特性IGBT,逆变器(典型)
gatechargecharacteristicIGBT,Inverter(typical)
VGE=f(QG)
IC=1200A,Tvj=25°C
2600
15
2400
13
VCC = 900 V
11
2200
9
2000
7
1800
5
1600
3
IC [A]
VGE [V]
1400
1200
1
-1
-3
1000
-5
800
-7
600
-9
400
-11
IC, Modul
IC, Chip
200
0
0,01
0
200
400
-13
600
-15
800 1000 1200 1400 1600 1800
VCE [V]
preparedby:WB
dateofpublication:2016-03-09
approvedby:IB
revision:V3.1
6
0
1
2
3
4
5
6 7 8
QG [µC]
9
10 11 12 13
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FF1200R17KP4_B2
正向偏压特性二极管,逆变器(典型)
forwardcharacteristicofDiode,Inverter(typical)
IF=f(VF)
开关损耗二极管,逆变器(典型)
switchinglossesDiode,Inverter(typical)
Erec=f(IF)
RGon=0.68Ω,VCE=900V
2400
500
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
2200
Erec, Tvj = 125°C
Erec, Tvj = 150°C
450
2000
400
1800
350
1600
300
IF [A]
E [mJ]
1400
1200
1000
250
200
800
150
600
100
400
50
200
0
0,0
0,5
1,0
1,5
2,0
0
2,5
0
400
800
VF [V]
开关损耗二极管,逆变器(典型)
switchinglossesDiode,Inverter(typical)
Erec=f(RG)
IF=1200A,VCE=900V
1600
2000
2400
瞬态热阻抗二极管,逆变器
transientthermalimpedanceDiode,Inverter
ZthJC=f(t)
450
425
1200
IF [A]
100
Erec, Tvj = 125°C
Erec, Tvj = 150°C
ZthJC : Diode
400
375
350
ZthJC [K/kW]
E [mJ]
325
300
275
10
250
225
200
i:
1
2
3
4
ri[K/kW]: 5,561 18,42 5,837 1,712
τi[s]:
0,002 0,051 0,441 7,373
175
150
1
0,001
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0
RG [Ω]
preparedby:WB
dateofpublication:2016-03-09
approvedby:IB
revision:V3.1
7
0,01
0,1
t [s]
1
10
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FF1200R17KP4_B2
安全工作区二极管,逆变器(SOA)
safeoperationareaDiode,Inverter(SOA)
IR=f(VR)
Tvj=150°C
2800
IR, Modul
2600
2400
2200
2000
1800
IR [A]
1600
1400
1200
1000
800
600
400
200
0
0
200
400
600
800 1000 1200 1400 1600 1800
VR [V]
preparedby:WB
dateofpublication:2016-03-09
approvedby:IB
revision:V3.1
8
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FF1200R17KP4_B2
接线图/Circuitdiagram
封装尺寸/Packageoutlines
preparedby:WB
dateofpublication:2016-03-09
approvedby:IB
revision:V3.1
9
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FF1200R17KP4_B2
Publishedby
InfineonTechnologiesAG
81726München,Germany
©InfineonTechnologiesAG2015.
AllRightsReserved.
使用条件和条款
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preparedby:WB
dateofpublication:2016-03-09
approvedby:IB
revision:V3.1
10
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