1200V/180A Full SiC Power Module with Integrated SiC Trench MOSFET

New Product Bulletin
1200V / 180A Full SiC Power Module with Integrated
SiC Trench MOSFET
BSM180D12P3C007
New full SiC power module with built-in
SiC trench MOSFET reduces ON resistance
and improves switching performance
Product Outline
SiC devices are attracting attention due to their superior performance and characteristics compared with silicon as
a semiconductor material.
ROHM’s new SiC MOSFET, which utilizes a trench structure that reduces ON resistance by 50% and input
capacitance by 35% compared with existing planar-type SiC MOSFETs, has been adopted in ROHM’s
1200V/180A full SiC power module.
BSM180D12P3C007
■ Proprietary double trench structure
provides long-term reliability
■ ON resistance reduced by 50%
ROHM’ s Double Trench Structure
Metal
Metal
SiO2
N+
P
P+
SiO2
N+
Poly-Si
P+
Gate Trench
P
Poly-Si
Gate Trench
Source
Trench
SiC n’ Drift layer
SiC n’ Drift layer
SiC sub
SiC sub
Metal
Metal
ON Resistance vs. Input Capacitance
Input Capacitance (pF)
Standard Single Trench Structure
50% lower *
ON resistance
80mΩ Planar MOSFET
Input capacitance
reduced 35%*
Trench
40mΩMOSFET
Trench
40mΩ
MOSFET
0
Electric field concentration mitigated
at the base of the Gate Trench
Electric field concentrated
at the base of the Gate Trench
2nd Generation
SiC MOSFET
3rd Generation
SiC Trench MOSFET
20
40
60
80
100
120
140
ON [email protected]°C (mΩ)
160
*Same chip size
■ Dramatically lower switching loss
Electric Field
Concentration
High
High
Low
Low
Switching Loss Comparison
Switching loss
■ Specifications
Part No.
BSM180D12P3C007
VDSS
(V)
VGS
(V)
1200
-4 to
+22
Absolute Max. Ratings (Ta=25°C)
Tj
Tstg
ID (A)
(°C)
(°C)
[Tc=60°C]
180
-40 to
+175
-40 to
+125
Package (C Type)
[AC 1min]
RDS(ON)
Typ.
(mΩ)
2500
10
Visol (V)
Internal Circuit
decreased 77%
Switching Loss
Electric Field
Concentration
60% less
42% less
IGBT Module
122
S1D2
45.6
D1
SS1 S1D2
SS2 S2
S2
G1
17
21.1
G1
SS1
N.C
N.C
SS2
G2
S1D2
Planar MOSFET
BSM180D12P2C101
Trench MOSFET
BSM180D12P3C007
D1
G2
■ Expanded discrete trench MOSFET lineup
The lineup is being expanded to include 3 part numbers for each rated
voltage: 650V and 1200V, in rated currents of 95A (1200V) and 118A (650V).
(Unit: mm)
21th January,2016.
.58F6889E-A 01.2016
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