NUP4301MR6T1 D

NUP4301MR6,
SZNUP4301MR6
Low Capacitance Diode
Array for ESD Protection in
Four Data Lines
http://onsemi.com
SZ/NUP4301MR6T1G is a micro−integrated device designed to
provide protection for sensitive components from possible harmful
electrical transients; for example, ESD (electrostatic discharge).
Features
• Low Capacitance (1.5 pf Maximum Between I/O Lines)
• Single Package Integration Design
• Provides ESD Protection for JEDEC Standards JESD22
•
•
•
•
•
•
SC−74
CASE 318F
Machine Model = Class C
Human Body Model = Class 3B
Protection for IEC61000−4−2 (Level 4)
8.0 kV (Contact)
15 kV (Air)
Ensures Data Line Speed and Integrity
Fewer Components and Less Board Space
Direct the Transient to Either Positive Side or to the Ground
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
This is a Pb−Free Device*
PIN CONFIGURATION
AND SCHEMATIC
I/O 1
6 I/O
VN 2
5 VP
1/O 3
4 I/O
MARKING DIAGRAM
Applications
•
•
•
•
•
•
•
•
64M G
G
USB 1.1 and 2.0 Data Line Protection
T1/E1 Secondary IC Protection
T3/E3 Secondary IC Protection
HDSL, IDSL Secondary IC Protection
Video Line Protection
Microcontroller Input Protection
Base Stations
I2C Bus Protection
1
64
= Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location.
*Date Code orientation may vary depending upon manufacturing location.
ORDERING INFORMATION
Package
Shipping†
NUP4301MR6T1G
SC−74
(Pb−Free)
3,000 /
Tape & Reel
SZNUP4301MR6T1G
SC−74
(Pb−Free)
3,000 /
Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 7
1
Publication Order Number:
NUP4301MR6T1/D
NUP4301MR6, SZNUP4301MR6
MAXIMUM RATINGS (Each Diode) (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
70
Vdc
Forward Current
IF
200
mAdc
IFM(surge)
500
mAdc
Repetitive Peak Reverse Voltage
VRRM
70
V
Average Rectified Forward Current (Note 1) (averaged over any 20 ms period)
IF(AV)
715
mA
Repetitive Peak Forward Current
IFRM
450
mA
Non−Repetitive Peak Forward Current
t = 1.0 ms
t = 1.0 ms
t = 1.0 S
IFSM
Peak Forward Surge Current
A
2.0
1.0
0.5
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 0.75 0.062 in.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
RqJA
556
°C/W
TL
260
°C
Junction Temperature
TJ
−40 to +150
°C
Storage Temperature
Tstg
−55 to +150
°C
Thermal Resistance, Junction−to−Ambient
Lead Solder Temperature, Maximum 10 Seconds Duration
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Each Diode)
Symbol
Characteristic
Min
Typ
Max
70
−
−
−
−
−
−
−
−
2.5
30
50
−
0.8
1.5
−
1.6
3
−
−
−
−
−
−
−
−
715
855
1000
1250
Unit
OFF CHARACTERISTICS
V(BR)
Reverse Breakdown Voltage
(I(BR) = 100 mA)
Reverse Voltage Leakage Current
(VR = 70 Vdc)
(VR = 25 Vdc, TJ = 150°C)
(VR = 70 Vdc, TJ = 150°C)
IR
Capacitance (between I/O pins)
(VR = 0 V, f = 1.0 MHz)
CD
Capacitance (between I/O pin and ground)
(VR = 0 V, f = 1.0 MHz)
CD
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
VF
Vdc
mAdc
pF
pF
mVdc
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Include SZ-prefix devices where applicable.
http://onsemi.com
2
NUP4301MR6, SZNUP4301MR6
Curves Applicable to Each Cathode
IF, FORWARD CURRENT (mA)
100
TA = 85°C
10
TA = -40°C
1.0
TA = 25°C
0.1
0.2
0.4
0.6
0.8
1.0
VF, FORWARD VOLTAGE (VOLTS)
1.2
Figure 1. Forward Voltage
IR , REVERSE CURRENT (μA)
10
TA = 150°C
TA = 125°C
1.0
TA = 85°C
0.1
TA = 55°C
0.01
TA = 25°C
0.001
0
10
20
30
40
VR, REVERSE VOLTAGE (VOLTS)
50
Figure 2. Leakage Current
CD, DIODE CAPACITANCE (pF)
1.75
1.5
1.25
1.0
0.75
0
2
4
6
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Capacitance
http://onsemi.com
3
8
NUP4301MR6, SZNUP4301MR6
PACKAGE DIMENSIONS
SC−74
CASE 318F−05
ISSUE N
D
6
5
4
2
3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. 318F−01, −02, −03, −04 OBSOLETE. NEW STANDARD 318F−05.
E
HE
1
DIM
A
A1
b
c
D
E
e
L
HE
q
b
e
0.05 (0.002)
q
C
A
L
A1
MIN
0.90
0.01
0.25
0.10
2.90
1.30
0.85
0.20
2.50
0°
MILLIMETERS
NOM
MAX
1.00
1.10
0.06
0.10
0.37
0.50
0.18
0.26
3.00
3.10
1.50
1.70
0.95
1.05
0.40
0.60
2.75
3.00
10°
−
MIN
0.035
0.001
0.010
0.004
0.114
0.051
0.034
0.008
0.099
0°
INCHES
NOM
0.039
0.002
0.015
0.007
0.118
0.059
0.037
0.016
0.108
−
MAX
0.043
0.004
0.020
0.010
0.122
0.067
0.041
0.024
0.118
10°
SOLDERING FOOTPRINT*
2.4
0.094
0.95
0.037
1.9
0.074
0.95
0.037
0.7
0.028
1.0
0.039
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
http://onsemi.com
4
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NUP4301MR6T1/D