BSC110N06NS3 G Data Sheet (393 KB, EN)

Type
BSC110N06NS3 G
OptiMOSTM3 Power-Transistor
Product Summary
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
VDS
60
V
RDS(on),max
11
mW
ID
50
A
• Superior thermal resistance
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Halogen-free according to IEC61249-2-21
Type
BSC110N06NS3 G
Package
PG-TDSON-8
Marking
110N06NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
V GS=10 V, T C=25 °C
50
V GS=10 V, T C=100 °C
33
V GS=10 V, T C=25 °C,
R thJA =50K/W 2)
12
Unit
A
Pulsed drain current3)
I D,pulse
T C=25 °C
200
Avalanche energy, single pulse4)
E AS
I D=50 A, R GS=25 W
22
mJ
Gate source voltage
V GS
±20
V
1)
J-STD20 and JESD22
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
3)
4)
See figure 3 for more detailed information
See figure 13 for more detailed information
Rev.2.4
page 1
2013-05-21
BSC110N06NS3 G
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot
Value
T C=25 °C
50
T A=25 °C,
T j, T stg
-55 ... 150
IEC climatic category; DIN IEC 68-1
Parameter
W
2.5
R thJA=50 K/W 2)
Operating and storage temperature
Unit
°C
55/150/56
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
2.5
minimal footprint
-
-
62
6 cm² cooling area2)
-
-
50
Thermal characteristics
Thermal resistance, junction - case
R thJC
Device on PCB
R thJA
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
60
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=23 µA
2
3
4
Zero gate voltage drain current
I DSS
V DS=60 V, V GS=0 V,
T j=25 °C
-
0.1
1
V DS=60 V, V GS=0 V,
T j=125 °C
-
10
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=50 A
-
9.0
11
mW
Gate resistance
RG
-
1.3
-
W
Transconductance
g fs
25
50
-
S
Rev.2.4
|V DS|>2|I D|R DS(on)max,
I D=50 A
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BSC110N06NS3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
2000
2700
-
440
590
Dynamic characteristics
Input capacitance
C iss
V GS=0 V, V DS=30 V,
f =1 MHz
pF
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
17
-
Turn-on delay time
t d(on)
-
10
-
Rise time
tr
-
77
-
Turn-off delay time
t d(off)
-
14
-
Fall time
tf
-
6
-
Gate to source charge
Q gs
-
12
-
Gate charge at threshold
Q g(th)
-
6
-
Gate to drain charge
Q gd
-
3
-
Switching charge
Q sw
-
8
-
Gate charge total
Qg
-
25
33
Gate plateau voltage
V plateau
-
5.9
-
Output charge
Q oss
-
20
27
-
-
53
-
-
212
-
0.95
1.2
V
-
36
-
ns
-
38
-
nC
V DD=30 V, V GS=10 V,
I D=50 A, R G,ext=3 W
ns
Gate Charge Characteristics5)
V DD=30 V, I D=50 A,
V GS=0 to 10 V
V DD=30 V, V GS=0 V
nC
V
Reverse Diode
Diode continuous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
5)
A
T C=25 °C
V GS=0 V, I F=50 A,
T j=25 °C
V R=30 V, I F=50A ,
di F/dt =100 A/µs
See figure 16 for gate charge parameter definition
Rev.2.4
page 3
2013-05-21
BSC110N06NS3 G
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
60
60
50
50
40
40
ID [A]
Ptot [W]
1 Power dissipation
30
30
20
20
10
10
0
0
0
50
100
150
200
0
50
100
TC [°C]
150
200
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
103
101
limited by on-state
resistance
1 µs
102
0.5
100
ZthJC [K/W]
ID [A]
10 µs
101
100 µs
0.2
0.1
0.05
10-1
100
0.02
0.01
1 ms
single pulse
10 ms
DC
10-1
10-2
10-1
100
101
102
VDS [V]
Rev.2.4
10-6
10-5
10-4
10-3
10-2
10-1
100
tp [s]
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BSC110N06NS3 G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
200
28
5V
26
5.5 V
6V
7V
10 V
24
22
150
20
RDS(on) [mW]
18
ID [A]
7V
100
16
14
12
10
8
6V
50
10 V
6
5.5 V
4
2
5V
0
0
0
1
2
3
4
0
50
100
VDS [V]
150
200
ID [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
120
80
100
60
gfs [S]
ID [A]
80
60
40
40
20
20
150 °C
25 °C
0
0
0
2
4
6
8
VGS [V]
Rev.2.4
0
20
40
60
80
100
120
ID [A]
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BSC110N06NS3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=50 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
20
5
18
4
16
RDS(on) [mW]
14
230 mA
VGS(th) [V]
3
12
max
10
typ
23 µA
2
8
6
1
4
2
0
-60
-20
20
60
100
140
180
-60
-20
20
Tj [°C]
60
100
140
180
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
104
103
10000
Ciss
103
1000
150°C 98%
102
102
150 °C25 °C
IF [A]
C [pF]
Coss
100
25°C 98%
101
101
10
Crss
100
1
0
20
40
60
VDS [V]
Rev.2.4
0
0.5
1
1.5
2
VSD [V]
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BSC110N06NS3 G
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 W
V GS=f(Q gate); I D=50 A pulsed
parameter: T j(start)
parameter: V DD
100
12
100 °C
125 °C
30 V
25 °C
10
12 V
10
48 V
VGS [V]
IAV [A]
8
1
6
4
2
0.1
0.1
1
10
100
0
1000
0
10
tAV [µs]
20
30
Qgate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
70
V GS
Qg
65
VBR(DSS) [V]
60
55
V gs(th)
50
45
Q g(th)
Q sw
Q gs
40
-60
-20
20
60
100
140
Q gate
Q gd
180
Tj [°C]
Rev.2.4
page 7
2013-05-21
BSC110N06NS3 G
PG-TDSON-8 (SuperSO8)
Rev.2.4
page 8
2013-05-21
BSC110N06NS3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
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Rev.2.4
page 9
2013-05-21