BSC110N06NS3 G Data Sheet (393 KB, EN)

Type
BSC110N06NS3 G
OptiMOSTM3 Power-Transistor
Product Summary
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
VDS
60
V
RDS(on),max
11
mW
ID
50
A
• Superior thermal resistance
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Halogen-free according to IEC61249-2-21
Type
BSC110N06NS3 G
Package
PG-TDSON-8
Marking
110N06NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
V GS=10 V, T C=25 °C
50
V GS=10 V, T C=100 °C
33
V GS=10 V, T C=25 °C,
R thJA =50K/W 2)
12
Unit
A
Pulsed drain current3)
I D,pulse
T C=25 °C
200
Avalanche energy, single pulse4)
E AS
I D=50 A, R GS=25 W
22
mJ
Gate source voltage
V GS
±20
V
1)
J-STD20 and JESD22
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
3)
4)
See figure 3 for more detailed information
See figure 13 for more detailed information
Rev.2.4
page 1
2013-05-21
BSC110N06NS3 G
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot
Value
T C=25 °C
50
T A=25 °C,
T j, T stg
-55 ... 150
IEC climatic category; DIN IEC 68-1
Parameter
W
2.5
R thJA=50 K/W 2)
Operating and storage temperature
Unit
°C
55/150/56
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
2.5
minimal footprint
-
-
62
6 cm² cooling area2)
-
-
50
Thermal characteristics
Thermal resistance, junction - case
R thJC
Device on PCB
R thJA
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
60
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=23 µA
2
3
4
Zero gate voltage drain current
I DSS
V DS=60 V, V GS=0 V,
T j=25 °C
-
0.1
1
V DS=60 V, V GS=0 V,
T j=125 °C
-
10
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=50 A
-
9.0
11
mW
Gate resistance
RG
-
1.3
-
W
Transconductance
g fs
25
50
-
S
Rev.2.4
|V DS|>2|I D|R DS(on)max,
I D=50 A
page 2
2013-05-21
BSC110N06NS3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
2000
2700
-
440
590
Dynamic characteristics
Input capacitance
C iss
V GS=0 V, V DS=30 V,
f =1 MHz
pF
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
17
-
Turn-on delay time
t d(on)
-
10
-
Rise time
tr
-
77
-
Turn-off delay time
t d(off)
-
14
-
Fall time
tf
-
6
-
Gate to source charge
Q gs
-
12
-
Gate charge at threshold
Q g(th)
-
6
-
Gate to drain charge
Q gd
-
3
-
Switching charge
Q sw
-
8
-
Gate charge total
Qg
-
25
33
Gate plateau voltage
V plateau
-
5.9
-
Output charge
Q oss
-
20
27
-
-
53
-
-
212
-
0.95
1.2
V
-
36
-
ns
-
38
-
nC
V DD=30 V, V GS=10 V,
I D=50 A, R G,ext=3 W
ns
Gate Charge Characteristics5)
V DD=30 V, I D=50 A,
V GS=0 to 10 V
V DD=30 V, V GS=0 V
nC
V
Reverse Diode
Diode continuous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
5)
A
T C=25 °C
V GS=0 V, I F=50 A,
T j=25 °C
V R=30 V, I F=50A ,
di F/dt =100 A/µs
See figure 16 for gate charge parameter definition
Rev.2.4
page 3
2013-05-21
BSC110N06NS3 G
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
60
60
50
50
40
40
ID [A]
Ptot [W]
1 Power dissipation
30
30
20
20
10
10
0
0
0
50
100
150
200
0
50
100
TC [°C]
150
200
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
103
101
limited by on-state
resistance
1 µs
102
0.5
100
ZthJC [K/W]
ID [A]
10 µs
101
100 µs
0.2
0.1
0.05
10-1
100
0.02
0.01
1 ms
single pulse
10 ms
DC
10-1
10-2
10-1
100
101
102
VDS [V]
Rev.2.4
10-6
10-5
10-4
10-3
10-2
10-1
100
tp [s]
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2013-05-21
BSC110N06NS3 G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
200
28
5V
26
5.5 V
6V
7V
10 V
24
22
150
20
RDS(on) [mW]
18
ID [A]
7V
100
16
14
12
10
8
6V
50
10 V
6
5.5 V
4
2
5V
0
0
0
1
2
3
4
0
50
100
VDS [V]
150
200
ID [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
120
80
100
60
gfs [S]
ID [A]
80
60
40
40
20
20
150 °C
25 °C
0
0
0
2
4
6
8
VGS [V]
Rev.2.4
0
20
40
60
80
100
120
ID [A]
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2013-05-21
BSC110N06NS3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=50 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
20
5
18
4
16
RDS(on) [mW]
14
230 mA
VGS(th) [V]
3
12
max
10
typ
23 µA
2
8
6
1
4
2
0
-60
-20
20
60
100
140
180
-60
-20
20
Tj [°C]
60
100
140
180
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
104
103
10000
Ciss
103
1000
150°C 98%
102
102
150 °C25 °C
IF [A]
C [pF]
Coss
100
25°C 98%
101
101
10
Crss
100
1
0
20
40
60
VDS [V]
Rev.2.4
0
0.5
1
1.5
2
VSD [V]
page 6
2013-05-21
BSC110N06NS3 G
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 W
V GS=f(Q gate); I D=50 A pulsed
parameter: T j(start)
parameter: V DD
100
12
100 °C
125 °C
30 V
25 °C
10
12 V
10
48 V
VGS [V]
IAV [A]
8
1
6
4
2
0.1
0.1
1
10
100
0
1000
0
10
tAV [µs]
20
30
Qgate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
70
V GS
Qg
65
VBR(DSS) [V]
60
55
V gs(th)
50
45
Q g(th)
Q sw
Q gs
40
-60
-20
20
60
100
140
Q gate
Q gd
180
Tj [°C]
Rev.2.4
page 7
2013-05-21
BSC110N06NS3 G
PG-TDSON-8 (SuperSO8)
Rev.2.4
page 8
2013-05-21
BSC110N06NS3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
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Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
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Rev.2.4
page 9
2013-05-21
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