BSZ042N04NS G Data Sheet (236 KB, EN)

BSZ042N04NS G
OptiMOS™3 Power-Transistor
Product Summary
Features
V DS
40
V
• Fast switching MOSFET for SMPS
R DS(on),max
4.2
mΩ
• Optimized technology for DC/DC converters
ID
40
A
• Qualified according to JEDEC1) for target applications
PG-TSDSON-8
• N-channel; Normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Superior thermal resistance
• Avalanche rated
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
Package
Marking
BSZ042N04NS G
PG-TSDSON-8
042N04N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
V GS=10 V, T C=25 °C
40
V GS=10 V, T C=100 °C
40
Unit
A
Pulsed drain current3)
I D,pulse
T C=25 °C
160
Avalanche current, single pulse 4)
I AS
T C=25 °C
20
Avalanche energy, single pulse
E AS
I D=20 A, R GS=25 Ω
150
mJ
Gate source voltage
V GS
±20
V
1)
Rev. 1.3
J-STD20 and JESD22
page 1
2009-11-05
BSZ042N04NS G
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot
Value
T C=25 °C
69
T A=25 °C,
T j, T stg
-55 ... 150
IEC climatic category; DIN IEC 68-1
Parameter
W
2.1
R thJA=60 K/W 2)
Operating and storage temperature
Unit
°C
55/150/56
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
1.8
-
-
60
40
-
-
Thermal characteristics
Thermal resistance, junction - case
R thJC
Device on PCB
R thJA
6 cm2 cooling area2)
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
Gate threshold voltage
V GS(th)
V DS=V GS, I D=36 µA
2
-
4
Zero gate voltage drain current
I DSS
V DS=40 V, V GS=0 V,
T j=25 °C
-
0.1
1
V DS=40 V, V GS=0 V,
T j=125 °C
-
10
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=20 A
-
3.5
4.2
mΩ
Gate resistance
RG
-
1.8
-
Ω
Transconductance
g fs
30
61
-
S
|V DS|>2|I D|R DS(on)max,
I D=30 A
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
Rev. 1.3
See figure 3 for more detailed information
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2009-11-05
BSZ042N04NS G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
2800
3700
-
820
1100
Dynamic characteristics
Input capacitance
C iss
V GS=0 V, V DS=20 V,
f =1 MHz
pF
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
30
-
Turn-on delay time
t d(on)
-
14
-
Rise time
tr
-
3.4
-
Turn-off delay time
t d(off)
-
20
-
Fall time
tf
-
4.2
-
Gate to source charge
Q gs
-
14
-
Gate charge at threshold
Q g(th)
-
8.5
-
Gate to drain charge
Q gd
-
4.3
-
Switching charge
Q sw
-
10
-
Gate charge total
Qg
-
35
46
Gate plateau voltage
V plateau
-
5.0
-
V
Gate charge total, sync. FET
Q g(sync)
V DS=0.1 V,
V GS=0 to 10 V
-
33
-
nC
Output charge
Q oss
V DD=20 V, V GS=0 V
-
30
-
-
-
40
-
-
160
V DD=20 V, V GS=10 V,
I D=20 A, R G=1.6 Ω
ns
Gate Charge Characteristics 5)
V DD=20 V, I D=20 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode continuous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
V GS=0 V, I F=20 A,
T j=25 °C
-
0.84
1.2
V
Reverse recovery charge
Q rr
V R=20 V, I F=I S,
di F/dt =400 A/µs
-
-
38
nC
4)
5)
Rev. 1.3
T C=25 °C
A
See figure 13 for more detailed information
See figure 16 for gate charge parameter definition
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2009-11-05
BSZ042N04NS G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
80
50
40
60
I D [A]
P tot [W]
30
40
20
20
10
0
0
0
40
80
120
160
0
40
80
T C [°C]
120
160
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
103
10
limited by on-state
resistance
1 µs
102
10 µs
1
100 µs
0.5
101
Z thJC [K/W]
I D [A]
DC
1 ms
0.2
0.1
10 ms
0.05
0.1
0.02
100
0.01
single pulse
10-1
10-1
100
101
102
0
0
0
0
0
0
1
10-6
10-5
10-4
10-3
10-2
10-1
100
t p [s]
V DS [V]
Rev. 1.3
0.01
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BSZ042N04NS G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
300
20
18
10 V
250
16
14
200
5V
R DS(on) [mΩ]
I D [A]
7V
6.5 V
150
100
12
5.5 V
10
8
6V
6V
6
6.5 V
5.5 V
50
7V
4
10 V
2
5V
0
0
0
1
2
3
0
10
20
V DS [V]
30
40
50
60
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
200
180
160
135
I D [A]
g fs [S]
120
90
80
45
150 °C
40
25 °C
0
0
2
3
4
5
6
7
8
Rev. 1.3
0
40
80
120
160
I D [A]
V GS [V]
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BSZ042N04NS G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=20 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS; I D=36 µA
8
4.5
4
6
R DS(on) [mΩ]
3.5
3
V GS(th) [V]
98 %
4
typ
2.5
2
2
1.5
0
1
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
104
1000
10000
Ciss
25 °C
Coss
1000
100
150 °C, 98%
I F [A]
C [pF]
103
150 °C
102
25 °C, 98%
10
100
Crss
101
1
10
0
10
20
30
40
Rev. 1.3
0.0
0.5
1.0
1.5
2.0
V SD [V]
V DS [V]
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BSZ042N04NS G
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 Ω
V GS=f(Q gate); I D=20 A pulsed
parameter: T j(start)
parameter: V DD
100
12
20 V
10
8V
8
V GS [V]
I AV [A]
25 °C
10
100 °C
32 V
6
4
125 °C
2
1
0
1
10
100
1000
0
4
8
12
16
20
24
28
32
36
Q gate [nC]
t AV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
45
V GS
Qg
V BR(DSS) [V]
40
35
V g s(th)
30
25
Q g(th)
Q sw
Q gs
20
-60
-20
20
60
100
140
Q g ate
Q gd
180
T j [°C]
Rev. 1.3
page 7
2009-11-05
BSZ042N04NS G
Package Outline
PG-TSDSON-8
PG-TDSON-8: Outline
Footprint
Dimensions in mm
Rev. 1.3
page 8
2009-11-05
BSZ042N04NS G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office
(www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 1.3
page 9
2009-11-05
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