Data Sheet

INTEGRATED CIRCUITS
DATA SHEET
TDA8542TS
2 × 0.7 W BTL audio amplifier
Product specification
Supersedes data of 1997 Nov 17
1998 Mar 25
NXP Semiconductors
Product specification
2 × 0.7 W BTL audio amplifier
TDA8542TS
FEATURES
GENERAL DESCRIPTION
• Flexibility in use
The TDA8542TS is a two channel audio power amplifier
for an output power of 2 × 0.7 W with a 16 Ω load at a 5 V
supply. At a low supply voltage of 3.3 V an output power of
0.6 W with an 8 Ω load can be obtained. The circuit
contains two Bridge-Tied Load (BTL) amplifiers with a
complementary PNP-NPN output stage and standby/mute
logic. The TDA8542TS is available in a SSOP20 package.
• Few external components
• Low saturation voltage of output stage
• Gain can be fixed with external resistors
• Standby mode controlled by CMOS compatible levels
• Low standby current
• No switch-on/switch-off plops
APPLICATIONS
• High supply voltage ripple rejection
• Portable consumer products
• Protected against electrostatic discharge
• Personal computers
• Outputs short-circuit safe to ground, VCC and across the
load
• Motor-driver (servo).
• Thermally protected.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCC
supply voltage
Iq
quiescent current
Istb
standby current
Po
output power
THD
total harmonic distortion
SVRR
supply voltage ripple rejection
CONDITIONS
MIN.
TYP.
MAX.
UNIT
2.2
5
18
V
−
15
22
mA
−
−
10
μA
THD = 10%; RL = 8 Ω; VCC = 3.3 V 0.45
0.55
−
W
THD = 10%; RL = 16 Ω; VCC = 5 V
0.6
0.7
−
W
Po = 0.4 W
−
0.15
−
%
50
−
−
dB
VCC = 5 V
ORDERING INFORMATION
TYPE
NUMBER
TDA8542TS
1998 Mar 25
PACKAGE
NAME
DESCRIPTION
SSOP20 plastic shrink small outline package; 20 leads; body width 4.4 mm
2
VERSION
SOT266-1
NXP Semiconductors
Product specification
2 × 0.7 W BTL audio amplifier
TDA8542TS
BLOCK DIAGRAM
VCCL VCCR
handbook, full pagewidth
11
20
−
INL−
INL+
17
16
18
−
+
OUTL−
R
n.c.
n.c.
n.c.
n.c.
n.c.
2
VCCL
R
7
9
−
−
12
19
20 kΩ
3
OUTL+
+
20 kΩ
STANDBY/MUTE LOGIC
TDA8542TS
−
INR−
INR+
14
15
13
−
+
OUTR−
R
VCCR
R
−
−
20 kΩ
SVR
8
OUTR+
+
5
20 kΩ
MODE
BTL/SE
4
6
STANDBY/MUTE LOGIC
1
10
MBK445
LGND RGND
Fig.1 Block diagram.
1998 Mar 25
3
NXP Semiconductors
Product specification
2 × 0.7 W BTL audio amplifier
TDA8542TS
PINNING
SYMBOL
PIN
DESCRIPTION
LGND
1
ground, left channel
n.c.
2
not connected
OUTL+
3
positive loudspeaker terminal, left
channel
MODE
4
operating mode select (standby,
mute, operating)
SVR
5
half supply voltage, decoupling
ripple rejection
BTL/SE
6
BTL loudspeaker or SE
headphone operation
n.c.
7
not connected
OUTR+
8
positive loudspeaker terminal,
right channel
n.c.
9
not connected
RGND
10
ground, right channel
VCCR
11
supply voltage, right channel
n.c.
12
not connected
OUTR−
13
negative loudspeaker terminal,
right channel
INR−
14
negative input, right channel
INR+
15
positive input, right channel
INL+
16
positive input, left channel
INL−
17
negative input, left channel
OUTL−
18
negative loudspeaker terminal,
left channel
n.c.
19
not connected
VCCL
20
supply voltage, left channel
handbook, halfpage
1
20 VCCL
n.c.
2
19 n.c.
OUTL+
3
18 OUTL−
MODE
4
17 INL−
SVR
5
16 INL+
TDA8542TS
BTL/SE
6
15 INR+
n.c.
7
14 INR−
OUTR+
8
13 OUTR−
n.c.
9
12 n.c.
11 VCCR
RGND 10
MBK453
Fig.2 Pin configuration.
FUNCTIONAL DESCRIPTION
transistor. The total voltage loss is <1 V and with a 5 V
supply voltage and with a 16 Ω loudspeaker an output
power of 0.7 W can be delivered.
The TDA8542TS is a 2 × 0.7 W BTL audio power amplifier
capable of delivering 2 × 0.7 W output power to a 16 Ω
load at THD = 10% using a 5 V power supply. Using the
MODE pin the device can be switched to standby and
mute condition. The device is protected by an internal
thermal shutdown protection mechanism. The gain can be
set within a range from 6 to 30 dB by external feedback
resistors.
Mode select pin
The device is in the standby mode (with a very low current
consumption) if the voltage at the MODE pin is
>(VCC − 0.5 V), or if this pin is floating. At a MODE voltage
level of less than 0.5 V the amplifier is fully operational.
In the range between 1.5 V and VCC − 1.5 V the amplifier
is in mute condition. The mute condition is useful to
suppress plop noise at the output caused by charging of
the input capacitor.
Power amplifier
The power amplifier is a Bridge-Tied Load (BTL) amplifier
with a complementary PNP-NPN output stage.
The voltage loss on the positive supply line is the
saturation voltage of a PNP power transistor, on the
negative side the saturation voltage of a NPN power
1998 Mar 25
LGND
4
NXP Semiconductors
Product specification
2 × 0.7 W BTL audio amplifier
TDA8542TS
not to ground, but to a voltage level of 1⁄2VCC. See Fig.4 for
the application diagram. In this case the BTL/SE pin must
be either at a logic LOW level or connected to ground.
If the BTL/SE pin is at a LOW level, the power amplifier for
the positive loudspeaker terminal is always in mute
condition.
Headphone connection
A headphone can be connected to the amplifier using two
coupling capacitors for each channel. The common
GND pin of the headphone is connected to the ground of
the amplifier (see Fig.13). In this case the BTL/SE pin must
be either at a logic HIGH level or not connected at all.
The two coupling capacitors can be omitted if it is allowed
to connect the common GND pin of the headphone jack
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
−0.3
+18
input voltage
−0.3
VCC + 0.3 V
IORM
repetitive peak output current
−
1
A
Tstg
storage temperature
−55
+150
°C
Tamb
operating ambient temperature
−40
+85
°C
Vsc
AC and DC short-circuit safe voltage
−
10
V
Ptot
total power dissipation
−
1.12
W
VCC
supply voltage
VI
operating
non-operating
V
QUALITY SPECIFICATION
In accordance with “SNW-FQ-611-E”.
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
in free air
VALUE
UNIT
110(1)
K/W
Note
1. See Section “Thermal design considerations”.
Table 1
Maximum ambient temperature at different conditions
CONTINUOUS SINE WAVE DRIVEN
VCC
(V)
RL
(Ω)
Po
(W)
3.3
4
3.3
Pmax
(W)
Tamb(max)
(°C)
2 × 0.65
1.12
27(1)
8
2 × 0.55
0.60
84
5
8
2 × 1.2
1.33
−(1)
5
16
2 × 0.70
0.80
62
Note
1. See Section “Thermal design considerations”.
1998 Mar 25
5
NXP Semiconductors
Product specification
2 × 0.7 W BTL audio amplifier
TDA8542TS
DC CHARACTERISTICS
VCC = 5 V; Tamb = 25 °C; RL = 8 Ω; VMODE = 0 V; measured in test circuit Fig.3; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCC
supply voltage
operating
2.2
5
18
V
Iq
quiescent current
RL = ∞; note 1
−
15
22
mA
Istb
standby current
VMODE = VCC
−
−
10
μA
VO
DC output voltage
note 2
−
2.2
−
V
⎪VOUT+ − VOUT−⎪ differential output voltage offset
−
−
50
mV
IIN+, IIN−
input bias current
−
−
500
nA
VMODE
input voltage mode select
V
operating
0
−
0.5
mute
1.5
−
VCC − 1.5 V
standby
VCC − 0.5 −
VCC
V
IMODE
input current mode select
0 < VMODE < VCC
−
−
20
μA
VBTL/SE
input voltage BTL/SE pin
single-ended
0
−
0.6
V
BTL
2
−
VCC
V
VBTL/SE = 0
−
−
100
μA
IBTL/SE
input current BTL/SE pin
Notes
1. With a load connected at the outputs the quiescent current will increase, the maximum of this increase being equal
to the DC output offset voltage divided by RL.
2. The DC output voltage with respect to ground is approximately 1⁄2VCC.
1998 Mar 25
6
NXP Semiconductors
Product specification
2 × 0.7 W BTL audio amplifier
TDA8542TS
AC CHARACTERISTICS
VCC = 5 V; Tamb = 25 °C; RL = 8 Ω; f = 1 kHz; VMODE = 0 V; measured in test circuit Fig.3; unless otherwise specified.
SYMBOL
Po
PARAMETER
output power
CONDITIONS
MIN.
TYP.
MAX.
UNIT
at VCC = 5 V
THD = 10%; RL = 8 Ω
−
1.2
−
W
THD = 10%; RL = 16 Ω
−
0.70
−
W
THD = 0.5%; RL = 8 Ω
−
0.9
−
W
THD = 0.5%; RL = 16 Ω
−
0.5
−
W
THD = 10%; RL = 4 Ω
−
0.65
−
W
THD = 10%; RL = 8 Ω
−
0.55
−
W
THD = 0.5%; RL = 4 Ω
−
0.45
−
W
THD = 0.5%; RL = 8 Ω
at VCC = 3.3 V
−
0.38
−
W
THD
total harmonic distortion
Po = 0.4 W
−
0.15
0.3
%
Gv(cl)
closed-loop voltage gain
note 1
6
−
30
dB
Zi(dif)
differential input impedance
−
100
−
kΩ
Vn(o)
noise output voltage
note 2
−
−
100
μV
SVRR
supply voltage ripple rejection
note 3
50
−
−
dB
note 4
40
−
−
dB
−
−
200
μV
40
−
−
dB
Vo(mute)
output voltage in mute condition
αcs
channel separation
note 5
Notes
R2
1. Gain of the amplifier is 2 × ------- in test circuit of Fig.3.
R1
2. The noise output voltage is measured at the output in a frequency range from 20 Hz to 20 kHz (unweighted), with a
source impedance of RS = 0 Ω at the input.
3. Supply voltage ripple rejection is measured at the output, with a source impedance of RS = 0 Ω at the input.
The ripple voltage is a sine wave with a frequency of 1 kHz and an amplitude of 100 mV (RMS), which is applied to
the positive supply rail.
4. Supply voltage ripple rejection is measured at the output, with a source impedance of RS = 0 Ω at the input.
The ripple voltage is a sine wave with a frequency between 100 Hz and 20 kHz and an amplitude of 100 mV (RMS),
which is applied to the positive supply rail.
5. Output voltage in mute position is measured with a 1 V (RMS) input voltage in a bandwidth of 20 kHz, so including
noise.
1998 Mar 25
7
NXP Semiconductors
Product specification
2 × 0.7 W BTL audio amplifier
TDA8542TS
TEST AND APPLICATION INFORMATION
The thermal resistance = 110 K/W for the SSOP20; the
maximum sine wave power dissipation for Tamb = 25 °C is:
function of frequency was measured with a low-pass filter
of 80 kHz. The value of capacitor C3 influences the
behaviour of the SVRR at low frequencies, increasing the
value of C3 increases the performance of the SVRR.
The figure of the mode select voltage (Vms) as a function
of the supply voltage shows three areas; operating, mute
and standby. It shows, that the DC-switching levels of the
mute and standby respectively depends on the supply
voltage level.
150 – 25
---------------------- = 1.14 W
110
SE application
Test conditions
Because the application can be either Bridge-Tied Load
(BTL) or Single-Ended (SE), the curves of each application
are shown separately.
For Tamb = 60 °C the maximum total power dissipation is:
Tamb = 25°C if not specially mentioned, VCC = 7.5 V,
f = 1 kHz, RL = 4 Ω, Gv = 20 dB, audio band-pass
22 Hz to 22 kHz.
150 – 60
---------------------- = 0.82 W
110
The SE application diagram is illustrated in Fig.14.
Thermal design considerations
If the BTL/SE pin (pin 6) is connected to ground, the
positive outputs (pins 3 and 8) will be in mute condition
with a DC level of 1⁄2VCC. When a headphone is used
(RL ≥ 25 Ω) the SE headphone application can be used
without output coupling capacitors; load between negative
output and one of the positive outputs (e.g. pin 3) as
common pin. The channel separation will be less in
comparison with the application using a coupling capacitor
connected to ground.
The ‘measured’ thermal resistance of the IC package is
highly dependent on the configuration and size of the
application board. Data may not be comparable between
different semiconductor manufacturers because the
application boards and test methods are not (yet)
standardized. Also, the thermal performance of packages
for a specific application may be different than presented
here, because the configuration of the application boards
(copper area) may be different. Philips Semiconductors
uses FR-4 type application boards with 1 oz copper traces
with solder coating.
150 – 60
dissipation for this PCB layout is: ---------------------- = 1.12 W
80
Increasing the value of electrolytic capacitor C3 will result
in a better channel separation. Because the positive output
is not designed for high output current (2 × Io) at low load
impedance (≤16 Ω), the SE application with output
capacitors connected to ground is advised. The capacitor
value of C4/C5 in combination with the load impedance
determines the low frequency behaviour. The THD as a
function of frequency was measured using a low-pass filter
of 80 kHz. The value of capacitor C3 influences the
behaviour of the SVRR at low frequencies, increasing the
value of C3 increases the performance of the SVRR.
BTL application
General remark
Tamb = 25°C if not specially mentioned, VCC = 5 V,
f = 1 kHz, RL = 8 Ω, Gv = 20 dB, audio band-pass
22 Hz to 22 kHz.
The frequency characteristic can be adapted by
connecting a small capacitor across the feedback resistor.
To improve the immunity of HF radiation in radio circuit
applications, a small capacitor can be connected in parallel
with the feedback resistor (56 kΩ); this creates a low-pass
filter.
The SSOP package has improved thermal conductivity
which reduces the thermal resistance. Using a practical
PCB layout (see Fig.22) with wider copper tracks to the
corner pins and just under the IC, the thermal resistance
from junction to ambient can be reduced to approximately
80 K/W. For Tamb = 60 °C the maximum total power
The BTL application diagram is illustrated in Fig.3.
The quiescent current has been measured without any
load impedance. The total harmonic distortion as a
1998 Mar 25
8
NXP Semiconductors
Product specification
2 × 0.7 W BTL audio amplifier
TDA8542TS
BTL APPLICATION
handbook, full pagewidth
VCC
1 μF
R2
R1
50 kΩ
INL−
10 kΩ
ViL
INL+
20
100 μF
100 nF
11
17
18
OUTL−
16
RL
C3
47 μF
3
OUTL+
OUTR−
1 μF
50 kΩ
R4
R3
INR−
10 kΩ
INR+
ViR
SVR
MODE
R2
Gain left = 2 × -------R1
BTL/SE
TDA8542TS
14
13
15
OUTR−
RL
5
8
4
6
1
OUTR+
10
R4
Gain right = 2 × -------R3
GND
Pins 2, 7, 9, 12 and 19 are not connected.
MBK443
Fig.3 BTL application.
MGD890
30
handbook, halfpage
Iq
(mA)
THD
(%)
20
1
10
10−1
10−2
10−2
0
0
4
8
12
20
16
VCC (V)
RL = ∞.
10−1
1
Po (W)
f = 1 kHz; Gv = 20 dB; VCC = 5 V; RL = 8 Ω.
Fig.4 Iq as a function of VCC.
1998 Mar 25
MBK446
10
handbook, halfpage
Fig.5 THD as a function of Po.
9
10
NXP Semiconductors
Product specification
2 × 0.7 W BTL audio amplifier
TDA8542TS
MBK447
10
MGD893
−60
handbook, halfpage
handbook, halfpage
αcs
(dB)
THD
(%)
(1)
−70
1
(2)
−80
(3)
10−1
−90
10−2
10
102
103
104
f (Hz)
−100
10
105
102
103
104
f (Hz)
105
VCC = 5 V, Vo = 2 V, RL = 8 Ω.
(1) Gv = 30 dB.
(2) Gv = 20 dB.
(3) Gv = 6 dB.
Po = 0.5 W; Gv = 20 dB; VCC = 5 V; RL = 8 Ω.
Fig.7
Channel separation as a function of
frequency.
Fig.6 THD as a function of frequency.
MGD894
−20
MBK448
2.5
handbook, halfpage
handbook, halfpage
SVRR
(dB)
Po
(W)
2
−40
1.5
(1)
(1)
(2)
(2)
1
−60
(3)
0.5
−80
10
102
103
104
f (Hz)
0
105
0
VCC = 5 V, Rs = 0 Ω, Vr = 100 mV.
(1) Gv = 30 dB.
(2) Gv = 20 dB.
(3) Gv = 6 dB.
8
VCC (V)
THD = 10%.
(1) RL = 8 Ω.
(2) RL = 16 Ω.
Fig.8 SVRR as a function of frequency.
1998 Mar 25
4
Fig.9 Po as a function of VCC.
10
12
NXP Semiconductors
Product specification
2 × 0.7 W BTL audio amplifier
TDA8542TS
MBK449
3
MBK450
3
handbook, halfpage
handbook, halfpage
P
(W)
P
(W)
2
2
(2)
(1)
1
1
0
0
4
0
8
VCC (V)
0
12
0.5
1
1.5
2
2.5
Po (W)
(1) RL = 8 Ω.
(2) RL = 16 Ω.
Sine wave of 1 kHz; VCC = 5 V; RL = 8 Ω.
Fig.10 Worst case power dissipation as a function
of VCC.
Fig.11 P as a function of Po.
MGD898
10
o
(V)
1
MGL210
16
handbook, halfpage
handbook,
V halfpage
VMODE
(V)
12
10−1
standby
10−2
10−3
(1)
(2)
8
(3)
mute
10−4
4
10−5
10−6
10−1
operating
1
10
Vms (V)
0
102
0
4
8
12
VP (V)
Band-pass = 22 Hz to 22 kHz.
(1) VCC = 3 V.
(2) VCC = 5 V.
(3) VCC = 12 V.
Fig.12 Vo as a function of Vms.
1998 Mar 25
Fig.13 VMODE as a function of VP.
11
16
NXP Semiconductors
Product specification
2 × 0.7 W BTL audio amplifier
TDA8542TS
SE APPLICATION
handbook, full pagewidth
VCC
1 μF
R2
R1
100 kΩ
10 kΩ
ViL
20
INL−
INL+
18
16
470 μF
OUTR−
1 μF
3
100 kΩ
10 kΩ
OUTL+
14
INR+
15
13
SVR
8
4
BTL/SE
6
R4
Gain right = ------R3
1
C5
OUTR−
5
MODE
Gain left = R2
-------R1
RL = 8 Ω
TDA8542TS
INR−
ViR
C4
OUTL−
C3
47 μF
R4
R3
100 μF
100 nF
11
17
OUTR+
470 μF
RL = 8 Ω
10
GND
MBK444
Pins 2, 7, 9, 12 and 19 are not connected.
Fig.14 Single-ended application.
MGD899
10
MGD900
10
handbook, halfpage
handbook, halfpage
THD
(%)
THD
(%)
1
1
(1)
(2)
10−1
10−1
(3)
(1)
(2)
(3)
10−2
10−2
10−1
1
Po (W)
10−2
10
10
f = 1 kHz, Gv = 20 dB.
(1) VCC = 7.5 V, RL = 4 Ω.
(2) VCC = 9 V, RL = 8 Ω.
(3) VCC = 12 V, RL = 16 Ω.
103
104
f (Hz)
105
Po = 0.5 W, Gv = 20 dB.
(1) VCC = 7.5 V, RL = 4 Ω.
(2) VCC = 9 V, RL = 8 Ω.
(3) VCC = 12 V, RL = 16 Ω.
Fig.15 THD as a function of Po.
1998 Mar 25
102
Fig.16 THD as a function of frequency.
12
NXP Semiconductors
Product specification
2 × 0.7 W BTL audio amplifier
TDA8542TS
MGD901
−20
handbook, halfpage
αcs
(dB)
MGD902
−20
handbook, halfpage
−40
SVRR
(dB)
(1)
−40
−60
(2)
(1)
(3)
(2)
−80
(4)
(5)
−60
(3)
−100
10
102
103
104
f (Hz)
105
−80
10
Vo = 1 V, Gv = 20 dB.
(1) VCC = 5 V, RL = 32 Ω, to buffer.
(2) VCC = 7.5 V, RL = 4 Ω.
(3) VCC = 9 V, RL = 8 Ω.
(4) VCC = 12 V, RL = 16 Ω.
102
103
104
f (Hz)
105
RS = 0 Ω, Vripple = 100 mV.
(1) Gv = 24 dB.
(2) Gv = 20 dB.
(3) Gv = 0 dB.
(5) VCC = 5 V, RL = 32 Ω.
Fig.17 Channel separation as a function of
frequency.
Fig.18 SVRR as a function of frequency.
MBK451
2
MBK452
3
handbook, halfpage
handbook, halfpage
Po
(W)
P
(W)
1.6
(1)
2
(2)
(1)
1.2
(3)
(2)
(3)
0.8
1
0.4
0
0
0
4
8
12
VCC (V)
16
0
8
12
VCC (V)
16
THD = 10%.
(1) RL = 4 Ω.
(2) RL = 8 Ω.
(3) RL = 16 Ω.
THD = 10%.
(1) RL = 4 Ω.
(2) RL = 8 Ω.
(3) RL = 16 Ω.
Fig.20 Worst case power dissipation as a function
of VCC.
Fig.19 Po as a function of VCC.
1998 Mar 25
4
13
NXP Semiconductors
Product specification
2 × 0.7 W BTL audio amplifier
TDA8542TS
MGD905
2.4
handbook, halfpage
P
(W)
(1)
1.6
(2)
(3)
0.8
0
0
0.4
0.8
1.2
Po (W)
1.6
f = 1 kHz.
(1) VCC = 12 V, RL = 16 Ω.
(2) VCC = 7.5 V, RL = 4 Ω.
(3) VCC = 9 V, RL = 8 Ω.
Fig.21 P as a function of Po.
1998 Mar 25
14
NXP Semiconductors
Product specification
2 × 0.7 W BTL audio amplifier
TDA8542TS
handbook, full pagewidth
a. Top view copper layout.
+VCC
−OUT1
TDA
8542TS
8547TS
GND
+OUT1
100 μF
10 kΩ
100 nF
56 kΩ
IN1
1 μF
10 kΩ
20
MODE
1
11 kΩ
11 kΩ
IN2
11 TDA 10
8542/47TS
47 μF
56 kΩ
SELECT
CIC
Nijmegen
1 μF
−OUT2
+OUT2
MGK997
b. Top view components layout.
Fig.22 Printed-circuit board layout (BTL).
1998 Mar 25
15
NXP Semiconductors
Product specification
2 × 0.7 W BTL audio amplifier
TDA8542TS
PACKAGE OUTLINE
SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm
D
SOT266-1
E
A
X
c
y
HE
v M A
Z
11
20
Q
A2
A
(A 3)
A1
pin 1 index
θ
Lp
L
1
10
detail X
w M
bp
e
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D (1)
E (1)
e
HE
L
Lp
Q
v
w
y
Z (1)
θ
mm
1.5
0.15
0
1.4
1.2
0.25
0.32
0.20
0.20
0.13
6.6
6.4
4.5
4.3
0.65
6.6
6.2
1
0.75
0.45
0.65
0.45
0.2
0.13
0.1
0.48
0.18
10
o
0
Note
1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.
OUTLINE
VERSION
SOT266-1
1998 Mar 25
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
99-12-27
03-02-19
MO-152
16
o
NXP Semiconductors
Product specification
2 × 0.7 W BTL audio amplifier
TDA8542TS
SOLDERING
If wave soldering cannot be avoided, the following
conditions must be observed:
Introduction
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave)
soldering technique should be used.
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
• The longitudinal axis of the package footprint must
be parallel to the solder flow and must incorporate
solder thieves at the downstream end.
Even with these conditions, only consider wave
soldering SSOP packages that have a body width of
4.4 mm, that is SSOP16 (SOT369-1) or
SSOP20 (SOT266-1).
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “IC Package Databook” (order code 9398 652 90011).
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Reflow soldering
Reflow soldering techniques are suitable for all SSOP
packages.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Repairing soldered joints
Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
Wave soldering
Wave soldering is not recommended for SSOP packages.
This is because of the likelihood of solder bridging due to
closely-spaced leads and the possibility of incomplete
solder penetration in multi-lead devices.
1998 Mar 25
17
NXP Semiconductors
Product specification
2 × 0.7 W BTL audio amplifier
TDA8542TS
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Limited warranty and liability ⎯ Information in this
document is believed to be accurate and reliable.
However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to
the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
information.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
In no event shall NXP Semiconductors be liable for any
indirect, incidental, punitive, special or consequential
damages (including - without limitation - lost profits, lost
savings, business interruption, costs related to the
removal or replacement of any products or rework
charges) whether or not such damages are based on tort
(including negligence), warranty, breach of contract or any
other legal theory.
Customers are responsible for the design and operation of
their applications and products using NXP
Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole
responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as
for the planned application and use of customer’s third
party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks
associated with their applications and products.
Notwithstanding any damages that customer might incur
for any reason whatsoever, NXP Semiconductors’
aggregate and cumulative liability towards customer for
the products described herein shall be limited in
accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.
NXP Semiconductors does not accept any liability related
to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications
or products, or the application or use by customer’s third
party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and
products using NXP Semiconductors products in order to
avoid a default of the applications and the products or of
the application or use by customer’s third party
customer(s). NXP does not accept any liability in this
respect.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in life support, life-critical or safety-critical systems or
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
1998 Mar 25
18
NXP Semiconductors
Product specification
2 × 0.7 W BTL audio amplifier
TDA8542TS
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Non-automotive qualified products ⎯ Unless this data
sheet expressly states that this specific NXP
Semiconductors product is automotive qualified, the
product is not suitable for automotive use. It is neither
qualified nor tested in accordance with automotive testing
or application requirements. NXP Semiconductors accepts
no liability for inclusion and/or use of non-automotive
qualified products in automotive equipment or
applications.
Terms and conditions of commercial sale ⎯ NXP
Semiconductors products are sold subject to the general
terms and conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an
individual agreement is concluded only the terms and
conditions of the respective agreement shall apply. NXP
Semiconductors hereby expressly objects to applying the
customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
In the event that customer uses the product for design-in
and use in automotive applications to automotive
specifications and standards, customer (a) shall use the
product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and
specifications, and (b) whenever customer uses the
product for automotive applications beyond NXP
Semiconductors’ specifications such use shall be solely at
customer’s own risk, and (c) customer fully indemnifies
NXP Semiconductors for any liability, damages or failed
product claims resulting from customer design and use of
the product for automotive applications beyond NXP
Semiconductors’ standard warranty and NXP
Semiconductors’ product specifications.
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
1998 Mar 25
19
NXP Semiconductors
provides High Performance Mixed Signal and Standard Product
solutions that leverage its leading RF, Analog, Power Management,
Interface, Security and Digital Processing expertise
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: [email protected]
© NXP B.V. 2010
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
545102/25/02/pp20
Date of release: 1998 Mar 25
Document order number:
9397 750 03351
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