Data Sheet

INTEGRATED CIRCUITS
DATA SHEET
TDA8542AT
2 × 1.5 W BTL audio amplifier
Product specification
Supersedes data of 1997 Nov 14
File under Integrated Circuits, IC01
1998 Mar 25
Philips Semiconductors
Product specification
2 × 1.5 W BTL audio amplifier
TDA8542AT
FEATURES
GENERAL DESCRIPTION
• Flexibility in use
The TDA8542AT is a two channel audio power amplifier
for an output power of 2 × 1.5 W with an 8 Ω load at a 6 V
supply. The circuit contains two Bridge-Tied Load (BTL)
amplifiers with a complementary PNP-NPN output stage
and standby/mute logic. The TDA8542AT comes in a
20-pin SO package.
• Few external components
• Low saturation voltage of output stage
• Gain can be fixed with external resistors
• Standby mode controlled by CMOS compatible levels
• Low standby current
• No switch-on/switch-off plops
APPLICATIONS
• High supply voltage ripple rejection
• Portable consumer products
• Protected against electrostatic discharge
• Personal computers
• Outputs short-circuit safe to ground, VCC and across the
load
• Motor-driver (servo).
• Thermally protected.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCC
supply voltage
Iq
quiescent current
Istb
standby current
Po
output power
THD
total harmonic distortion
SVRR
supply voltage ripple rejection
CONDITIONS
MIN.
2.2
TYP.
6
MAX.
18
UNIT
V
−
15
22
mA
−
−
10
µA
THD = 10%; RL = 8 Ω; VCC = 6 V
1
1.5
−
W
Po = 0.5 W
−
0.15
−
%
50
−
−
dB
VCC = 6 V
ORDERING INFORMATION
PACKAGE
TYPE
NUMBER
NAME
TDA8542AT
SO20
1998 Mar 25
DESCRIPTION
plastic small outline package; 20 leads; body width 7.5 mm
2
VERSION
SOT163-1
Philips Semiconductors
Product specification
2 × 1.5 W BTL audio amplifier
TDA8542AT
BLOCK DIAGRAM
VCCL VCCR
handbook, full pagewidth
19
12
−
INL−
INL+
17
18
−
+
16
OUTL−
R
VCCL
R
−
−
20 kΩ
3
OUTL+
+
20 kΩ
STANDBY/MUTE LOGIC
TDA8542AT
−
INR−
INR+
14
13
−
+
15
OUTR−
R
VCCR
R
−
−
20 kΩ
SVR
8
OUTR+
+
5
20 kΩ
MODE
BTL/SE
4
STANDBY/MUTE LOGIC
6
7
n.c.
1
10
11
20
GND GND GND GND
Fig.1 Block diagram.
1998 Mar 25
3
2
LGND
9
RGND
MGM211
Philips Semiconductors
Product specification
2 × 1.5 W BTL audio amplifier
TDA8542AT
PINNING
SYMBOL
PIN
DESCRIPTION
GND
1
ground; note 1
LGND
2
ground, left channel
OUTL+
3
positive loudspeaker terminal,
left channel
MODE
4
operating mode select (standby,
mute, operating)
SVR
5
half supply voltage, decoupling
ripple rejection
BTL/SE
6
BTL loudspeaker or SE
headphone operation
n.c.
7
not connected
OUTR+
8
positive loudspeaker terminal,
right channel
RGND
9
ground, right channel
GND
10
ground; note 1
GND
11
ground; note 1
VCCR
12
supply voltage, right channel
OUTR−
13
negative loudspeaker terminal,
right channel
INR−
14
negative input, right channel
INR+
15
positive input, right channel
INL+
16
positive input, left channel
INL−
17
negative input, left channel
OUTL−
18
negative loudspeaker terminal,
left channel
VCCL
19
supply voltage, left channel
GND
20
ground; note 1
handbook, halfpage
20 GND
LGND 2
19 VCCL
OUTL+ 3
18 OUTL−
MODE 4
17 INL−
16 INL+
SVR 5
TDA8542AT
BTL/SE 6
15 INR+
n.c. 7
14 INR−
OUTR+ 8
13 OUTR−
RGND 9
12 VCCR
GND 10
11 GND
MGM212
Fig.2 Pin configuration.
Note
1. Pins 1, 10, 11 and 20 are connected to the leadframe
and also to the substrate. They may be kept floating.
When connected to the ground-plane the PCB can be
used as heatsink.
1998 Mar 25
GND 1
4
Philips Semiconductors
Product specification
2 × 1.5 W BTL audio amplifier
TDA8542AT
FUNCTIONAL DESCRIPTION
Mode select pin
The TDA8542AT is a 2 × 1.5 W BTL audio power amplifier
capable of delivering 2 × 1.5 W output power to an 8 Ω
load at THD = 10% using a 6 V power supply. Using the
MODE pin the device can be switched to standby and
mute condition. The device is protected by an internal
thermal shutdown protection mechanism. The gain can be
set within a range from 6 to 30 dB by external feedback
resistors.
The device is in the standby mode (with a very low current
consumption) if the voltage at the MODE pin is
>(VCC − 0.5 V), or if this pin is floating. At a MODE voltage
level of less than 0.5 V the amplifier is fully operational.
In the range between 1.5 V and VCC − 1.5 V the amplifier
is in mute condition. The mute condition is useful to
suppress plop noise at the output caused by charging of
the input capacitor.
Power amplifier
Headphone connection
The power amplifier is a Bridge-Tied Load (BTL) amplifier
with a complementary PNP-NPN output stage.
The voltage loss on the positive supply line is the
saturation voltage of a PNP power transistor, on the
negative side the saturation voltage of a NPN power
transistor. The total voltage loss is <1 V and with a 6 V
supply voltage and an 8 Ω loudspeaker an output power of
1.5 W can be delivered.
A headphone can be connected to the amplifier using two
coupling capacitors for each channel. The common GND
pin of the headphone is connected to the ground of the
amplifier (see Fig.14). In this case the BTL/SE pin must be
either on a logic HIGH level or not connected at all.
The two coupling capacitors can be omitted if it is allowed
to connect the common GND pin of the headphone jack
not to ground, but to a voltage level of 1⁄2VCC (see Fig.14).
In this case the BTL/SE pin must be either on a logic LOW
level or connected to ground. If the BTL/SE pin is on a
LOW level, the power amplifier for the positive
loudspeaker terminal is always in mute condition.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCC
supply voltage
−0.3
+18
V
VI
input voltage
−0.3
VCC + 0.3
V
IORM
repetitive peak output current
−
1
A
Tstg
storage temperature
−55
+150
°C
Tamb
operating ambient temperature
−40
+85
°C
Vsc
AC and DC short-circuit safe voltage
−
10
V
Ptot
total power dissipation
−
2.2
W
operating
non-operating
QUALITY SPECIFICATION
In accordance with “SNW-FQ-611-E”.
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
1998 Mar 25
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
in free air
5
VALUE
UNIT
60
K/W
Philips Semiconductors
Product specification
2 × 1.5 W BTL audio amplifier
TDA8542AT
DC CHARACTERISTICS
VCC = 6 V; Tamb = 25 °C; RL = 8 Ω; VMODE = 0 V; measured in test circuit Fig.3; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
VCC
supply voltage
operating
2.2
6
MAX.
18
UNIT
V
Iq
quiescent current
RL = ∞; note 1
−
15
22
mA
Istb
standby current
VMODE = VCC
−
−
10
µA
VO
DC output voltage
note 2
−
2.2
−
V
VOUT+ − VOUT− differential output voltage offset
−
−
50
mV
IIN+, IIN−
input bias current
−
−
500
nA
VMODE
input voltage mode select
0
−
0.5
V
−
operating
VCC − 1.5 V
mute
1.5
standby
VCC − 0.5 −
VCC
V
−
−
20
µA
IMODE
input current mode select
0 < VMODE < VCC
VBTL/SE
input voltage BTL/SE pin
single-ended
0
−
0.6
V
BTL
2
−
VCC
V
VBTL/SE = 0
−
−
100
µA
IBTL/SE
input current BTL/SE pin
Notes
1. With a load connected at the outputs the quiescent current will increase, the maximum of this increase being equal
to the DC output offset voltage divided by RL.
2. The DC output voltage with respect to ground is approximately 1⁄2VCC.
1998 Mar 25
6
Philips Semiconductors
Product specification
2 × 1.5 W BTL audio amplifier
TDA8542AT
AC CHARACTERISTICS
VCC = 6 V; Tamb = 25 °C; RL = 8 Ω; f = 1 kHz; VMODE = 0 V; measured in test circuit Fig.3; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
Po
output power
THD = 10%
THD = 0.5%
THD
total harmonic distortion
Po = 0.4 W
Gv(cl)
closed-loop voltage gain
note 1
MIN.
TYP.
MAX.
UNIT
1.5
−
W
0.9
1.1
−
W
−
0.15
0.3
%
6
−
30
dB
1.2
Zi(dif)
differential input impedance
−
100
−
kΩ
Vn(o)
noise output voltage
note 2
−
−
100
µV
SVRR
supply voltage ripple rejection
note 3
50
−
−
dB
note 4
40
−
−
dB
Vo(mute)
output voltage in mute condition
note 5
−
−
200
µV
αcs
channel separation
40
−
−
dB
Notes
R2
1. Gain of the amplifier is 2 × -------- in test circuit of Fig.3.
R1
2. The noise output voltage is measured at the output in a frequency range from 20 Hz to 20 kHz (unweighted), with a
source impedance of RS = 0 Ω at the input.
3. Supply voltage ripple rejection is measured at the output, with a source impedance of RS = 0 Ω at the input.
The ripple voltage is a sine wave with a frequency of 1 kHz and an amplitude of 100 mV (RMS), which is applied to
the positive supply rail.
4. Supply voltage ripple rejection is measured at the output, with a source impedance of RS = 0 Ω at the input.
The ripple voltage is a sine wave with a frequency between 100 Hz and 20 kHz and an amplitude of 100 mV (RMS),
which is applied to the positive supply rail.
5. Output voltage in mute position is measured with a 1 V (RMS) input voltage in a bandwidth of 20 kHz, so including
noise.
1998 Mar 25
7
Philips Semiconductors
Product specification
2 × 1.5 W BTL audio amplifier
TDA8542AT
TEST AND APPLICATION INFORMATION
Using a practical PCB layout with wider copper tracks and
some copper area to the IC pins and just under the IC
(see Fig.22), the thermal resistance from junction to
ambient can be reduced to approximately 56 K/W.
For Tamb(max) = 50 °C the maximum total power dissipation
Test conditions
Because the application can be either Bridge-Tied Load
(BTL) or Single-Ended (SE), the curves of each application
are shown separately.
150 – 50
at this PCB layout is: ----------------------- = 1.79 W
56
The thermal resistance = 60 K/W; the maximum sine wave
150 – 25
power dissipation for Tamb = 25 °C is: ---------------------- = 2.1 W
60
For the application VCC = 6 V and RL = 8 Ω the worst case
sine wave dissipation is 1.75 W.
For Tamb = 60 °C the maximum total power dissipation is:
SE application
150 – 60
---------------------- = 1.5 W
60
Tamb = 25°C if not specially mentioned, VCC = 7.5 V,
f = 1 kHz, RL = 4 Ω, Gv = 20 dB, audio band-pass
22 Hz to 22 kHz.
BTL application
The SE application diagram is illustrated in Fig.14.
Tamb = 25°C if not specially mentioned, VCC = 6 V,
f = 1 kHz, RL = 8 Ω, Gv = 20 dB, audio band-pass
22 Hz to 22 kHz.
If the BTL/SE pin (pin 6) is connected to ground, the
positive outputs (pins 3 and 8) will be in mute condition
with a DC level of 1⁄2VCC. When a headphone is used
(RL ≥ 25 Ω) the SE headphone application can be used
without output coupling capacitors; load between negative
output and one of the positive outputs (e.g. pin 3) as
common pin.
The BTL application diagram is illustrated in Fig.3.
The quiescent current has been measured without any
load impedance. The total harmonic distortion as a
function of frequency was measured with a low-pass filter
of 80 kHz. The value of capacitor C3 influences the
behaviour of the SVRR at low frequencies, increasing the
value of C3 increases the performance of the SVRR.
The figure of the mode select voltage (Vms) as a function
of the supply voltage shows three areas; operating, mute
and standby. It shows, that the DC-switching levels of the
mute and standby respectively depends on the supply
voltage level.
Increasing the value of electrolytic capacitor C3 will result
in a better channel separation. Because the positive output
is not designed for high output current (2 × Io) at low load
impedance (≤16 Ω), the SE application with output
capacitors connected to ground is advised. The capacitor
value of C4/C5 in combination with the load impedance
determines the low frequency behaviour. The THD as a
function of frequency was measured using a low-pass filter
of 80 kHz. The value of capacitor C3 influences the
behaviour of the SVRR at low frequencies, increasing the
value of C3 increases the performance of the SVRR.
Thermal behaviour
The measured thermal resistance of the IC package is
highly dependent on the configuration and size of the
application board. Data may not be comparable between
different semiconductors manufacturers because the
application boards and test methods are not (yet)
standardized. Also, the thermal performance of packages
for a specific application may be different than presented
here, because the configuration of the application boards
(copper area) may be different.
General remark
The frequency characteristic can be adapted by
connecting a small capacitor across the feedback resistor.
To improve the immunity of HF radiation in radio circuit
applications, a small capacitor can be connected in
parallel with the feedback resistor (56 kΩ); this creates a
low-pass filter.
Philips Semiconductors uses FR-4 type application boards
with 1 oz copper traces with solder coating.
The measurements have been carried out with vertical
placed boards.
1998 Mar 25
8
Philips Semiconductors
Product specification
2 × 1.5 W BTL audio amplifier
TDA8542AT
BTL APPLICATION
handbook, full pagewidth
VCC
1 µF
R2
R1
50 kΩ
10 kΩ
ViL
19
INL−
OUTL−
18
INL+
100 µF
100 nF
12
17
16
C3
47 µF
RL
OUTL+
3
OUTR−
1 µF
50 kΩ
R4
R3
TDA8542AT
INR−
14
INR+
10 kΩ
ViR
SVR
RL
5
MODE
6
OUTR+
8
4
BTL/SE
R2
Gain left = 2 × -------R1
OUTR−
13
15
2
9
R4
Gain right = 2 × -------R3
GND
MGM213
Pins 1, 10, 11 and 20 connected to ground.
Fig.3 BTL application.
MGD890
30
MGM214
10
handbook, halfpage
handbook, halfpage
Iq
(mA)
THD
(%)
20
1
(1)
10−1
10
10−2
10−2
0
0
4
8
12
20
16
VCC (V)
10−1
1
Po (W)
f = 1 kHz, Gv = 20 dB.
(1) VCC = 6 V, RL = 8 Ω.
(2) VCC = 7.5 V, RL = 16 Ω.
RI = ∞.
Fig.4 Iq as a function of VCC.
1998 Mar 25
(2)
Fig.5 THD as a function of Po.
9
10
Philips Semiconductors
Product specification
2 × 1.5 W BTL audio amplifier
TDA8542AT
MGD892
10
MGD893
−60
handbook, halfpage
handbook, halfpage
αcs
(dB)
THD
(%)
(1)
−70
1
(2)
(1)
−80
(3)
(2)
10−1
−90
10−2
10
102
103
104
f (Hz)
−100
10
105
102
103
104
f (Hz)
105
VCC = 6 V, Vo = 2 V, RL = 8 Ω.
(1) Gv = 30 dB.
(2) Gv = 20 dB.
(3) Gv = 6 dB.
Po = 0.5 W, Gv = 20 dB.
(1) VCC = 6 V, RL = 8 Ω.
(2) VCC = 7.5 V, RL = 16 Ω.
Fig.7
Channel separation as a function of
frequency.
Fig.6 THD as a function of frequency.
MGD894
−20
MGD895
2.5
handbook, halfpage
handbook, halfpage
SVRR
(dB)
Po
(W)
2
−40
(1)
(2)
1.5
(1)
(2)
1
−60
(3)
0.5
−80
10
102
103
104
f (Hz)
0
105
0
VCC = 6 V, Rs = 0 Ω, Vr 100 mV.
(1) Gv = 30 dB.
(2) Gv = 20 dB.
(3) Gv = 6 dB.
8
VCC (V)
THD = 10%.
(1) RL = 8 Ω.
(2) RL = 16 Ω.
Fig.8 SVRR as a function of frequency.
1998 Mar 25
4
Fig.9 Po as a function of VCC.
10
12
Philips Semiconductors
Product specification
2 × 1.5 W BTL audio amplifier
TDA8542AT
MGD896
3
MGM215
3
handbook, halfpage
handbook, halfpage
P
(W)
P
(W)
(1)
2
2
(1)
(2)
(2)
1
1
0
0
4
0
8
VCC (V)
12
0
0.5
1
1.5
2
2.5
Po (W)
(1) RL = 8 Ω.
(2) RL = 16 Ω.
f = 1 kHz; Gv = 20 dB.
(1) VCC = 6 V, RL = 8 Ω.
(2) VCC = 7.5 V, RL = 16 Ω.
Fig.10 Worst case power dissipation as a function
of VCC.
Fig.11 Power dissipation as a function of Po.
MGD898
10
o
(V)
1
MGL210
16
handbook, halfpage
handbook,
V halfpage
VMODE
(V)
12
10−1
standby
10−2
10−3
(1)
(2)
8
(3)
mute
10−4
4
10−5
10−6
10−1
operating
1
10
Vms (V)
0
102
0
4
8
12
VP (V)
Band-pass = 22 Hz to 22 kHz.
(1) VCC = 3 V.
(2) VCC = 5 V.
(3) VCC = 12 V.
Fig.12 Vo as a function of Vms.
1998 Mar 25
Fig.13 VMODE as a function of VP.
11
16
Philips Semiconductors
Product specification
2 × 1.5 W BTL audio amplifier
TDA8542AT
SE APPLICATION
handbook, full pagewidth
VCC
1 µF
R2
R1
100 kΩ
INL−
10 kΩ
ViL
INL+
19
470 µF
OUTR−
1 µF
C4
OUTL−
18
16
C3
47 µF
R4
R3
INR−
INR+
10 kΩ
SVR
MODE
BTL/SE
R2
Gain left = -------R1
RL = 8 Ω
OUTL+
3
100 kΩ
ViR
100 µF
100 nF
12
17
TDA8542AT
14
15
C5
OUTR−
13
470 µF
5
8
4
6
OUTR+
2
RL = 8 Ω
9
R4
Gain right = -------R3
GND
MGM216
Pins 1, 10, 11 and 20 connected to ground.
Fig.14 Single-ended application.
MGD900
10
MGD899
10
handbook, halfpage
handbook, halfpage
THD
(%)
THD
(%)
1
1
(1)
(2)
10−1
10−1
(3)
(1)
(2)
(3)
10−2
10−2
10−1
1
Po (W)
10−2
10
10
f = 1 kHz, Gv = 20 dB.
(1) VCC = 7.5 V, RL = 4 Ω.
(2) VCC = 9 V, RL = 8 Ω.
(3) VCC = 12 V, RL = 16 Ω.
103
104
f (Hz)
105
Po = 0.5 W, Gv = 20 dB.
(1) VCC = 7.5 V, RL = 4 Ω.
(2) VCC = 9 V, RL = 8 Ω.
(3) VCC = 12 V, RL = 16 Ω.
Fig.15 THD as a function of Po.
1998 Mar 25
102
Fig.16 THD as a function of frequency.
12
Philips Semiconductors
Product specification
2 × 1.5 W BTL audio amplifier
TDA8542AT
MGD901
−20
MGD902
−20
handbook, halfpage
handbook, halfpage
αcs
(dB)
SVRR
(dB)
−40
−40
(1)
−60
(1)
(2)
(2)
(3)
−80
−60
(4)
(5)
−100
10
102
103
(3)
104
f (Hz)
−80
10
105
Vo = 1 V, Gv = 20 dB.
(1) VCC = 5 V, RL = 32 Ω, to buffer.
(2) VCC = 7.5 V, RL = 4 Ω.
(3) VCC = 9 V, RL = 8 Ω.
(4) VCC = 12 V, RL = 16 Ω.
(5) VCC = 5 V, RL = 32 Ω.
102
103
104
f (Hz)
105
RS = 0 Ω, Vr = 100 mV.
(1) Gv = 24 dB.
(2) Gv = 20 dB.
(3) Gv = 0 dB.
Fig.17 Channel separation as a function of
frequency.
Fig.18 SVRR as a function of frequency.
MGD903
2
MGM217
3
handbook, halfpage
handbook, halfpage
Po
(W)
P
(W)
1.6
(1)
(1)
1.2
(2)
(2)
(3)
2
(3)
0.8
1
0.4
0
0
0
4
8
12
VCC (V)
0
16
8
12
VCC (V)
16
THD = 10%.
(1) RL = 4 Ω.
(2) RL = 8 Ω.
(3) RL = 16 Ω.
THD = 10%.
(1) RL = 4 Ω.
(2) RL = 8 Ω.
(3) RL = 16 Ω.
Fig.20 Worst case power dissipation as a function
of VCC.
Fig.19 Po as a function of VCC.
1998 Mar 25
4
13
Philips Semiconductors
Product specification
2 × 1.5 W BTL audio amplifier
TDA8542AT
MGD905
2.4
handbook, halfpage
P
(W)
(1)
1.6
(2)
(3)
0.8
0
0
0.4
0.8
1.2
Po (W)
1.6
f = 1 kHz.
(1) VCC = 12 V, RL = 16 Ω.
(2) VCC = 7.5 V, RL = 4 Ω.
(3) VCC = 9 V, RL = 8 Ω.
Fig.21 P as a function of Po.
1998 Mar 25
14
Philips Semiconductors
Product specification
2 × 1.5 W BTL audio amplifier
TDA8542AT
handbook, full pagewidth
ADT
TA2458
a. Top view of copper.
+VCC
−OUT1
GND
TDA
8542AT
+OUT1
100 µF
10 kΩ
100 nF
56 kΩ
IN1
10 kΩ
1
20
1 µF
MODE
11 kΩ
11 kΩ
IN2
56 kΩ
47 µF
11
10
TDA8542AT
CIC
Nijmegen
1 µF
−OUT2
B/S
+OUT2
MGM218
b. Top view with components.
Fig.22 Printed-circuit board layout (BTL).
1998 Mar 25
15
Philips Semiconductors
Product specification
2 × 1.5 W BTL audio amplifier
TDA8542AT
PACKAGE OUTLINE
SO20: plastic small outline package; 20 leads; body width 7.5 mm
SOT163-1
D
E
A
X
c
HE
y
v M A
Z
11
20
Q
A2
A
(A 3)
A1
pin 1 index
θ
Lp
L
1
10
e
bp
detail X
w M
0
5
10 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D (1)
E (1)
e
HE
L
Lp
Q
v
w
y
mm
2.65
0.30
0.10
2.45
2.25
0.25
0.49
0.36
0.32
0.23
13.0
12.6
7.6
7.4
1.27
10.65
10.00
1.4
1.1
0.4
1.1
1.0
0.25
0.25
0.1
0.9
0.4
inches
0.10
0.012 0.096
0.004 0.089
0.01
0.019 0.013
0.014 0.009
0.51
0.49
0.30
0.29
0.050
0.419
0.043
0.055
0.394
0.016
0.043
0.039
0.01
0.01
0.004
0.035
0.016
Z
(1)
θ
8o
0o
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
REFERENCES
OUTLINE
VERSION
IEC
JEDEC
SOT163-1
075E04
MS-013AC
1998 Mar 25
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
95-01-24
97-05-22
16
Philips Semiconductors
Product specification
2 × 1.5 W BTL audio amplifier
TDA8542AT
SOLDERING
Wave soldering
Introduction
Wave soldering techniques can be used for all SO
packages if the following conditions are observed:
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.
• The longitudinal axis of the package footprint must be
parallel to the solder flow.
• The package footprint must incorporate solder thieves at
the downstream end.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “IC Package Databook” (order code 9398 652 90011).
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Reflow soldering
Reflow soldering techniques are suitable for all SO
packages.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
Repairing soldered joints
Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
1998 Mar 25
17
Philips Semiconductors
Product specification
2 × 1.5 W BTL audio amplifier
TDA8542AT
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Mar 25
18
Philips Semiconductors
Product specification
2 × 1.5 W BTL audio amplifier
TDA8542AT
NOTES
1998 Mar 25
19
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Internet: http://www.semiconductors.philips.com
© Philips Electronics N.V. 1997
SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
545102/25/02/pp20
Date of release: 1998 Mar 25
Document order number:
9397 750 03349
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