Data Sheet

TDA8922B
2 × 50 W class-D power amplifier
Rev. 01 — 1 October 2004
Preliminary data sheet
1. General description
The TDA8922B is a high efficiency class-D audio power amplifier with very low
dissipation. The typical output power is 2 × 50 W.
The device is available in the HSOP24 power package and in the DBS23P through-hole
power package. The amplifier operates over a wide supply voltage range from ±12.5 V
to ±30 V and consumes a very low quiescent current.
2. Features
■
■
■
■
■
■
■
■
■
■
■
■
Zero dead time switching
Advanced current protection: output current limiting
Smooth start-up: no pop-noise due to DC offset
High efficiency
Operating supply voltage from ±12.5 V to ±30 V
Low quiescent current
Usable as a stereo Single-Ended (SE) amplifier or as a mono amplifier in Bridge-Tied
Load (BTL)
Fixed gain of 30 dB in Single-Ended (SE) and 36 dB in Bridge-Tied Load (BTL)
High supply voltage ripple rejection
Internal switching frequency can be overruled by an external clock
Full short-circuit proof across load and to supply lines
Thermally protected.
3. Applications
■
■
■
■
■
Television sets
Home-sound sets
Multimedia systems
All mains fed audio systems
Car audio (boosters).
TDA8922B
Philips Semiconductors
2 × 50 W class-D power amplifier
4. Quick reference data
Table 1:
Quick reference data
Symbol Parameter
Conditions
Min
Typ
Max
Unit
±12.5
±26
±30
V
-
50
65
mA
RL = 6 Ω; THD = 10 %;
VP = ±26 V
-
50
-
W
RL = 8 Ω; THD = 10 %;
VP = ±21 V
-
25
-
W
-
88
-
W
General; VP = ±26 V
VP
supply voltage
Iq(tot)
total quiescent
supply current
no load; no filter; no
RC-snubber network
connected
Stereo single-ended configuration
Po
output power
Mono bridge-tied load configuration
Po
RL = 8 Ω; THD = 10 %;
VP = ±21 V
output power
5. Ordering information
Table 2:
Ordering information
Type number
Package
Name
Description
Version
TDA8922BTH
HSOP24
plastic; heatsink small outline package; 24 leads; low
stand-off height
SOT566-3
TDA8922BJ
DBS23P
plastic DIL-bent-SIL power package; 23 leads
(straight lead length 3.2 mm)
SOT411-1
9397 750 13357
Preliminary data sheet
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Rev. 01 — 1 October 2004
2 of 32
TDA8922B
Philips Semiconductors
2 × 50 W class-D power amplifier
6. Block diagram
VDDA2
VDDA1
3 (20)
IN1M
IN1P
SGND1
OSC
MODE
SGND2
10 (4)
18 (12)
13 (7)
IN2M
23 (16)
VDDP1
14 (8)
15 (9)
BOOT1
RELEASE1
9 (3)
PWM
MODULATOR
INPUT
STAGE
8 (2)
SWITCH1
CONTROL
AND
ENABLE1 HANDSHAKE
mute
11 (5)
DRIVER
HIGH
16 (10)
OUT1
DRIVER
LOW
STABI
VSSP1
7 (1)
6 (23)
OSCILLATOR
TEMPERATURE SENSOR
CURRENT PROTECTION
VOLTAGE PROTECTION
MANAGER
MODE
TDA8922BTH
(TDA8922BJ)
VDDP2
22 (15)
BOOT2
2 (19)
ENABLE2
mute
IN2P
VDDP2
STABI PROT
CONTROL
SWITCH2
AND
HANDSHAKE
RELEASE2
5 (22)
4 (21)
INPUT
STAGE
1 (18)
VSSA2
PWM
MODULATOR
12 (6)
VSSA1
24 (17)
VSSD
19 (-)
n.c.
DRIVER
HIGH
21 (14)
OUT2
DRIVER
LOW
17 (11)
VSSP1
20 (13)
coa022
VSSP2
(1) Pin numbers in parenthesis refer to the TDA8922BJ.
Fig 1. Block diagram.
9397 750 13357
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Rev. 01 — 1 October 2004
3 of 32
TDA8922B
Philips Semiconductors
2 × 50 W class-D power amplifier
7. Pinning information
7.1 Pinning
VSSD 24
1
VSSA2
VDDP2 23
2
SGND2
BOOT2 22
3
VDDA2
OUT2 21
4
IN2M
VSSP2 20
5
IN2P
n.c. 19
6
MODE
7
OSC
TDA8922BTH
STABI 18
VSSP1 17
8
IN1P
OUT1 16
9
IN1M
BOOT1 15
VDDP1 14
10 VDDA1
11 SGND1
PROT 13
12 VSSA1
OSC
1
IN1P
2
IN1M
3
VDDA1
4
SGND1
5
VSSA1
6
PROT
7
VDDP1
8
BOOT1
9
OUT1 10
VSSP1 11
STABI 12
TDA8922BJ
VSSP2 13
OUT2 14
BOOT2 15
VDDP2 16
VSSD 17
VSSA2 18
SGND2 19
001aab170
VDDA2 20
IN2M 21
IN2P 22
MODE 23
001aab171
Fig 2. Pin configuration TDA8922BTH.
Fig 3. Pin configuration TDA8922BJ.
7.2 Pin description
Table 3:
Symbol
Pin description
Pin
Description
TDA8922BTH TDA8922BJ
VSSA2
1
18
negative analog supply voltage for channel 2
SGND2
2
19
signal ground for channel 2
VDDA2
3
20
positive analog supply voltage for channel 2
IN2M
4
21
negative audio input for channel 2
IN2P
5
22
positive audio input for channel 2
MODE
6
23
mode selection input: Standby; Mute or
Operating mode
OSC
7
1
oscillator frequency adjustment or tracking input
IN1P
8
2
positive audio input for channel 1
IN1M
9
3
negative audio input for channel 1
VDDA1
10
4
positive analog supply voltage for channel 1
9397 750 13357
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Rev. 01 — 1 October 2004
4 of 32
TDA8922B
Philips Semiconductors
2 × 50 W class-D power amplifier
Table 3:
Symbol
Pin description …continued
Pin
Description
TDA8922BTH TDA8922BJ
SGND1
11
5
signal ground for channel 1
VSSA1
12
6
negative analog supply voltage for channel 1
PROT
13
7
decoupling capacitor for protection (OCP)
VDDP1
14
8
positive power supply voltage for channel 1
BOOT1
15
9
bootstrap capacitor for channel 1
OUT1
16
10
PWM output from channel 1
VSSP1
17
11
negative power supply voltage for channel 1
STABI
18
12
decoupling of internal stabilizer for logic supply
n.c.
19
-
not connected
VSSP2
20
13
negative power supply voltage for channel 2
OUT2
21
14
PWM output from channel 2
BOOT2
22
15
bootstrap capacitor for channel 2
VDDP2
23
16
positive power supply voltage for channel 2
VSSD
24
17
negative digital supply voltage
8. Functional description
8.1 General
The TDA8922B is a two channel audio power amplifier using class-D technology.
The audio input signal is converted into a digital Pulse Width Modulated (PWM) signal via
an analog input stage and PWM modulator. To enable the output power transistors to be
driven, this digital PWM signal is applied to a control and handshake block and driver
circuits for both the high side and low side. In this way a level shift is performed from the
low power digital PWM signal (at logic levels) to a high power PWM signal which switches
between the main supply lines.
A 2nd-order low-pass filter converts the PWM signal to an analog audio signal across the
loudspeakers.
The TDA8922B one-chip class-D amplifier contains high power D-MOS switches, drivers,
timing and handshaking between the power switches and some control logic. For
protection a temperature sensor and a maximum current detector are built-in.
The two audio channels of the TDA8922B contain two PWMs, two analog feedback loops
and two differential input stages. It also contains circuits common to both channels such
as the oscillator, all reference sources, the mode functionality and a digital timing
manager.
The TDA8922B contains two independent amplifier channels with high output power, high
efficiency, low distortion and a low quiescent current. The amplifier channels can be
connected in the following configurations:
• Mono Bridge-Tied Load (BTL) amplifier
• Stereo Single-Ended (SE) amplifiers.
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Rev. 01 — 1 October 2004
5 of 32
TDA8922B
Philips Semiconductors
2 × 50 W class-D power amplifier
The amplifier system can be switched in three operating modes with pin MODE:
• Standby mode; with a very low supply current
• Mute mode; the amplifiers are operational; but the audio signal at the output is
suppressed by disabling the VI-converter input stages
• Operating mode; the amplifiers fully are operational with output signal.
To ensure pop-noise free start-up the DC output offset voltage is applied gradually to the
output between Mute mode and Operating mode. The bias current setting of the VI
converters is related to the voltage on the MODE pin; in Mute mode the bias current
setting of the VI converters is zero (VI converters disabled) and in Operating mode the
bias current is at maximum. The time constant required to apply the DC output offset
voltage gradually between mute and operating can be generated via an RC-network on
the MODE pin. An example of a switching circuit for driving pin MODE is illustrated in
Figure 4. If the capacitor C is left out of the application the voltage on the MODE pin will
be applied with a much smaller time-constant, which might result in audible pop-noises
during start-up (depending on DC output offset voltage and used loudspeaker).
In order to fully charge the coupling capacitors at the inputs, the amplifier will remain
automatically in the Mute mode before switching to the Operating mode. A complete
overview of the start-up timing is given in Figure 5.
+5 V
standby/
mute
R
MODE pin
R
C
mute/on
SGND
001aab172
Fig 4. Example of mode selection circuit.
9397 750 13357
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Rev. 01 — 1 October 2004
6 of 32
TDA8922B
Philips Semiconductors
2 × 50 W class-D power amplifier
audio output
modulated PWM
Vmode
50 %
duty cycle
operating
> 4.2 V
mute
2.2 V < Vmode < 3 V
0 V (SGND)
standby
> 350 ms
100 ms
time
50 ms
audio output
modulated PWM
Vmode
50 %
duty cycle
operating
> 4.2 V
mute
2.2 V < Vmode < 3 V
0 V (SGND)
standby
> 350 ms
100 ms
time
50 ms
coa024
When switching from standby to mute, there is a delay of 100 ms before the output starts
switching. The audio signal is available after Vmode has been set to operating, but not earlier
than 150 ms after switching to mute. For pop-noise free start-up it is recommended that the
time constant applied to the MODE pin is at least 350 ms for the transition between mute and
operating.
When switching directly from standby to operating, there is a first delay of 100 ms before the
outputs starts switching. The audio signal is available after a second delay of 50 ms. For
pop-noise free start-up it is recommended that the time constant applied to the MODE pin is at
least 350 ms for the transition between standby and operating
Fig 5. Timing on mode selection input.
9397 750 13357
Preliminary data sheet
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Rev. 01 — 1 October 2004
7 of 32
TDA8922B
Philips Semiconductors
2 × 50 W class-D power amplifier
8.2 Pulse width modulation frequency
The output signal of the amplifier is a PWM signal with a carrier frequency of
approximately 317 kHz. Using a 2nd-order LC demodulation filter in the application results
in an analog audio signal across the loudspeaker. This switching frequency is fixed by an
external resistor ROSC connected between pin OSC and VSSA. An optimal setting for the
carrier frequency is between 300 kHz and 350 kHz.
Using an external resistor of 30 kΩ on the OSC pin, the carrier frequency is set to
317 kHz.
If two or more class-D amplifiers are used in the same audio application, it is advisable to
have all devices operating at the same switching frequency by using an external clock
circuit.
8.3 Protections
The following protections are included in TDA8922B:
•
•
•
•
OverTemperature Protection (OTP)
OverCurrent Protection (OCP)
Window Protection (WP)
Supply voltage protections:
– UnderVoltage Protection (UVP)
– OverVoltage Protection (OVP)
– UnBalance Protection (UBP).
The reaction of the device on the different fault conditions differs per protection:
8.3.1 OverTemperature Protection (OTP)
If the junction temperature Tj > 150 °C, then the power stage will shut-down immediately.
The power stage will start switching again if the temperature drops to approximately
130 °C, thus there is a hysteresis of approximately 20 °C.
8.3.2 OverCurrent Protection (OCP)
When the loudspeaker terminals are short-circuited or if one of the demodulated outputs
of the amplifier is short-circuited to one of the supply lines, this will be detected by the
OverCurrent Protection (OCP). If the output current exceeds the maximum output current
of 5 A, this current will be limited by the amplifier to 5 A while the amplifier outputs remain
switching (the amplifier is NOT shut-down completely).
The amplifier can distinguish between an impedance drop of the loudspeaker and
low-ohmic short across the load. In the TDA8922B this impedance threshold (Zth)
depends on the supply voltage used.
When a short is made across the load causing the impedance to drop below the threshold
level (< Zth) then the amplifier is switched off completely and after a time of 100 ms it will
try to restart again. If the short circuit condition is still present after this time this cycle will
be repeated. The average dissipation will be low because of this low duty cycle.
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Rev. 01 — 1 October 2004
8 of 32
TDA8922B
Philips Semiconductors
2 × 50 W class-D power amplifier
In case of an impedance drop (e.g. due to dynamic behavior of the loudspeaker) the same
protection will be activated; the maximum output current is again limited to 5 A, but the
amplifier will NOT switch-off completely (thus preventing audio holes from occurring).
Result will be a clipping output signal without any artefacts.
See also Section 13.6 for more information on this maximum output current limiting
feature.
8.3.3 Window Protection (WP)
During the start-up sequence, when pin MODE is switched from standby to mute, the
conditions at the output terminals of the power stage are checked. In the event of a
short-circuit at one of the output terminals to VDD or VSS the start-up procedure is
interrupted and the system waits for open-circuit outputs. Because the test is done before
enabling the power stages, no large currents will flow in the event of a short-circuit. This
system is called Window Protection (WP) and protects for short-circuits at both sides of
the output filter to both supply lines. When there is a short-circuit from the power PWM
output of the power stage to one of the supply lines (before the demodulation filter) it will
also be detected by the start-up safety test. Practical use of this test feature can be found
in detection of short-circuits on the printed-circuit board.
Remark: This test is operational during (every) start-up sequence at a transition between
Standby and Mute mode. However when the amplifier is completely shut-down due to
activation of the OverCurrent Protection (OCP) because a short to one of the supply lines
is made, then during restart (after 100 ms) the window protection will be activated. As a
result the amplifier will not start-up until the short to the supply lines is removed.
8.3.4 Supply voltage protections
If the supply voltage drops below ±12.5 V, the UnderVoltage Protection (UVP) circuit is
activated and the system will shut-down correctly. If the internal clock is used, this
switch-off will be silent and without pop noise. When the supply voltage rises above the
threshold level, the system is restarted again after 100 ms. If the supply voltage exceeds
±33 V the OverVoltage Protection (OVP) circuit is activated and the power stages will
shut-down. It is re-enabled as soon as the supply voltage drops below the threshold level.
So in this case no timer of 100 ms is started.
An additional UnBalance Protection (UBP) circuit compares the positive analog (VDDA)
and the negative analog (VSSA) supply voltages and is triggered if the voltage difference
between them exceeds a certain level. This level depends on the sum of both supply
voltages. An expression for the unbalanced threshold level is as follows:
Vth(ub) ≈ 0.15 × (VDDA + VSSA).
When the supply voltage difference drops below the threshold level, the system is
restarted again after 100 ms.
Example: With a symmetrical supply of ±30 V, the protection circuit will be triggered if the
unbalance exceeds approximately 9 V; see also Section 13.7.
In Table 4 an overview is given of all protections and the effect on the output signal.
9397 750 13357
Preliminary data sheet
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Rev. 01 — 1 October 2004
9 of 32
TDA8922B
Philips Semiconductors
2 × 50 W class-D power amplifier
Table 4:
Overview protections TDA8922B
Protection name
Complete shut-down
Restart directly
Restart every 100 ms
OTP
Y
Y [1]
N [1]
OCP
N [2]
Y [2]
N [2]
WP
Y [3]
Y
N
UVP
Y
N
Y
OVP
Y
Y
N
UBP
Y
N
Y
[1]
Hysteresis of 20 degrees will influence restart timing depending on heatsink size.
[2]
Only complete shut-down of amplifier if short-circuit impedance is below threshold of 1 Ω. In all other cases
current limiting: resulting in clipping output signal.
[3]
Fault condition detected during (every) transition between standby-to-mute and during restart after
activation of OCP (short to one of the supply lines).
8.4 Differential audio inputs
For a high common mode rejection ratio and a maximum of flexibility in the application, the
audio inputs are fully differential. By connecting the inputs anti-parallel the phase of one of
the channels can be inverted, so that a load can be connected between the two output
filters. In this case the system operates as a mono BTL amplifier and with the same
loudspeaker impedance an approximately four times higher output power can be
obtained.
The input configuration for a mono BTL application is illustrated in Figure 6.
In the stereo single-ended configuration it is also recommended to connect the two
differential inputs in anti-phase. This has advantages for the current handling of the power
supply at low signal frequencies.
OUT1
IN1P
IN1M
Vin
SGND
IN2P
IN2M
OUT2
power stage
mbl466
Fig 6. Input configuration for mono BTL application.
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Rev. 01 — 1 October 2004
10 of 32
TDA8922B
Philips Semiconductors
2 × 50 W class-D power amplifier
9. Limiting values
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VP
supply voltage
Conditions
Max
Unit
-
±30
V
5
-
A
IORM
repetitive peak current in
output pin
Tstg
storage temperature
−55
+150
°C
Tamb
ambient temperature
−40
+85
°C
Tj
junction temperature
-
150
°C
Typ
Unit
[1]
maximum output
current limiting
[1]
Min
Current limiting concept. See also Section 13.6.
10. Thermal characteristics
Table 6:
Symbol
Rth(j-a)
Rth(j-c)
[1]
Thermal characteristics
Parameter
Conditions
[1]
thermal resistance from junction to ambient
TDA8922BTH
in free air
35
K/W
TDA8922BJ
in free air
35
K/W
TDA8922BTH
1.3
K/W
TDA8922BJ
1.3
K/W
[1]
thermal resistance from junction to case
See also Section 13.5.
11. Static characteristics
Table 7:
Static characteristics
VP = ±26 V; fosc = 317 kHz; Tamb = 25 °C; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max Unit
Supply
VP
supply voltage
Iq(tot)
total quiescent supply
current
Istb
standby supply current
[1]
no load; no filter; no
snubber network
connected
±12.5 ±26
±30
V
-
50
65
mA
-
150
500
µA
0
-
6
V
-
100
300
µA
0
-
0.8
V
2.2
-
3.0
V
4.2
-
6
V
Mode select input; pin MODE
[2]
VI
input voltage
II
input current
Vstb
input voltage for
Standby mode
[2]
input voltage for Mute
mode
[2]
input voltage for
Operating mode
[2]
Vmute
Von
VI = 5.5 V
9397 750 13357
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[3]
[3]
[3]
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Rev. 01 — 1 October 2004
11 of 32
TDA8922B
Philips Semiconductors
2 × 50 W class-D power amplifier
Table 7:
Static characteristics …continued
VP = ±26 V; fosc = 317 kHz; Tamb = 25 °C; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max Unit
-
0
-
V
-
-
15
mV
-
-
150
mV
-
-
21
mV
-
-
210
mV
11
12.5 15
V
Audio inputs; pins IN1M, IN1P, IN2P and IN2M
[2]
DC input voltage
VI
Amplifier outputs; pins OUT1 and OUT2
VOO(SE)(mute)
mute SE output offset
voltage
VOO(SE)(on)
operating SE output
offset voltage
VOO(BTL)(mute)
mute BTL output offset
voltage
VOO(BTL)(on)
operating BTL output
offset voltage
[4]
[4]
Stabilizer output; pin STABI
stabilizer output
voltage
Vo(stab)
mute and operating;
with respect to VSSP1
Temperature protection
Tprot
temperature protection
activation
-
150
-
°C
Thys
hysteresis on
temperature protection
-
20
-
°C
[1]
The circuit is DC adjusted at VP = ±12.5 V to ±30 V.
[2]
With respect to SGND (0 V).
[3]
The transition between Standby and Mute mode contain hysteresis, while the slope of the transition
between Mute and Operating mode is determined by the time-constant on the MODE pin see Figure 7.
[4]
DC output offset voltage is applied to the output during the transition between Mute and Operating mode in
a gradual way.The slope of the dV/dt caused by any DC output offset is determined by the time-constant on
the MODE pin.
slope is directly related to
time-constant on the MODE pin
VO (V)
Voo (on)
STBY
MUTE
ON
Voo (mute)
0
0.8
2.2
3.0
4.2
5.5
VMODE (V)
coa021
Fig 7. Behavior of mode selection pin MODE.
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Rev. 01 — 1 October 2004
12 of 32
TDA8922B
Philips Semiconductors
2 × 50 W class-D power amplifier
12. Dynamic characteristics
12.1 Switching characteristics
Table 8:
Switching characteristics
VDD = ±26 V; Tamb = 25 °C; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ROSC = 30.0 kΩ
290
317
344
kHz
210
-
600
kHz
SGND + 6
V
Internal oscillator
fosc
typical internal oscillator
frequency
fosc(int)
internal oscillator
frequency range
External oscillator or frequency tracking
VOSC
high-level voltage on pin
OSC
SGND + 4.5 SGND + 5
VOSC(trip)
trip level for tracking on
pin OSC
-
SGND + 2.5 -
V
ftrack
frequency range for
tracking
210
-
600
kHz
12.2 Stereo and dual SE application
Table 9:
Stereo and dual SE application characteristics
VP = ±26 V; RL = 6 Ω; fi = 1 kHz; RsL < 0.1 Ω [1]; Tamb = 25 °C; unless otherwise specified.
Symbol
Parameter
Conditions
Po
output power
RL = 4 Ω; VP = ±21 V
Min
Typ
Max
Unit
-
32
-
W
-
40
-
W
-
40
-
W
-
50
-
W
THD = 0.5 %
-
20
-
W
THD = 10 %
-
25
-
W
-
32
-
W
-
40
-
W
fi = 1 kHz
-
0.02
0.05
%
fi = 6 kHz
-
0.07
-
%
29
30
31
dB
-
55
-
dB
[2]
THD = 0.5 %
THD = 10 %
RL = 6 Ω; VP = ±26 V
[2]
THD = 0.5 %
THD = 10 %
RL = 8 Ω; VP = ±21 V
RL = 8 Ω; VP = ±26 V
[2]
[2]
THD = 0.5 %
THD = 10 %
THD
total harmonic distortion
Gv(cl)
closed loop voltage gain
SVRR
supply voltage ripple
rejection
[3]
Po = 1 W
operating
[4]
fi = 100 Hz
fi = 1 kHz
40
50
-
dB
mute; fi = 100 Hz
[4]
-
55
-
dB
standby; fi = 100 Hz
[4]
-
80
-
dB
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Rev. 01 — 1 October 2004
13 of 32
TDA8922B
Philips Semiconductors
2 × 50 W class-D power amplifier
Table 9:
Stereo and dual SE application characteristics …continued
VP = ±26 V; RL = 6 Ω; fi = 1 kHz; RsL < 0.1 Ω [1]; Tamb = 25 °C; unless otherwise specified.
Symbol
Parameter
Zi
input impedance
Vn(o)
noise output voltage
αcs
channel separation
∆Gv
channel unbalance
Vo(mute)
output signal in mute
CMRR
common mode rejection
ratio
[1]
Conditions
Min
Typ
Max
Unit
45
68
-
kΩ
operating
Rs = 0 Ω
[5]
-
210
-
µV
mute
[6]
-
160
-
µV
[7]
-
70
-
dB
-
-
1
dB
[8]
Vi(CM) = 1 V (RMS)
-
100
-
µV
-
75
-
dB
RsL is the series resistance of inductor of low-pass LC filter in the application.
[2]
Output power is measured indirectly; based on RDSon measurement. See also Section 13.3.
[3]
Total harmonic distortion is measured in a bandwidth of 22 Hz to 20 kHz, using an AES17 20 kHz brickwall filter. Maximum limit is
guaranteed but may not be 100 % tested.
[4]
Vripple = Vripple(max) = 2 V (p-p); Rs = 0 Ω.
[5]
B = 22 Hz to 20 kHz, using an AES17 20 kHz brickwall filter.
[6]
B = 22 Hz to 20 kHz, using an AES17 20 kHz brickwall filter; independent of Rs.
[7]
Po = 1 W; Rs = 0 Ω; fi = 1 kHz.
[8]
Vi = Vi(max) = 1 V (RMS); fi = 1 kHz.
12.3 Mono BTL application
Table 10: Mono BTL application characteristics
VP = ±26 V; RL = 8 Ω; fi = 1 kHz; fosc = 317 kHz; RsL < 0.1 Ω [1]; Tamb = 25 °C; unless otherwise specified.
Symbol
Po
Parameter
Conditions
Min
Typ
Max
Unit
output power
RL = 6 Ω; VP = ±16 V
-
48
-
W
-
60
-
W
THD = 0.5 %
-
71
-
W
THD = 10 %
-
88
-
W
fi = 1 kHz
-
0.02
0.05
%
fi = 6 kHz
-
0.07
-
%
35
36
37
dB
-
80
-
dB
[2]
THD = 0.5 %
THD = 10 %
RL = 8 Ω; VP = ±21 V
THD
Gv(cl)
SVRR
total harmonic distortion
[2]
[3]
Po = 1 W
closed loop voltage gain
supply voltage ripple
rejection
operating
[4]
fi = 100 Hz
fi = 1 kHz
Zi
70
80
-
dB
mute; fi = 100 Hz
[4]
-
80
-
dB
standby; fi = 100 Hz
[4]
-
80
-
dB
22
34
-
kΩ
input impedance
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14 of 32
TDA8922B
Philips Semiconductors
2 × 50 W class-D power amplifier
Table 10: Mono BTL application characteristics …continued
VP = ±26 V; RL = 8 Ω; fi = 1 kHz; fosc = 317 kHz; RsL < 0.1 Ω [1]; Tamb = 25 °C; unless otherwise specified.
Symbol
Parameter
Conditions
Vn(o)
noise output voltage
operating
Vo(mute)
output signal in mute
CMRR
common mode rejection
ratio
Min
Typ
Max
Unit
Rs = 0 Ω
[5]
-
300
-
µV
mute
[6]
-
220
-
µV
[7]
-
200
-
µV
-
75
-
dB
Vi(CM) = 1 V (RMS)
[1]
RsL is the series resistance of inductor of low-pass LC filter in the application.
[2]
Output power is measured indirectly; based on RDSon measurement. See also Section 13.3.
[3]
Total harmonic distortion is measured in a bandwidth of 22 Hz to 20 kHz, using an AES17 20 kHz brickwall filter. Maximum limit is
guaranteed but may not be 100 % tested.
[4]
Vripple = Vripple(max) = 2 V (p-p); Rs = 0 Ω.
[5]
B = 22 Hz to 20 kHz, using an AES17 20 kHz brickwall filter.
[6]
B = 22 Hz to 20 kHz, using an AES17 20 kHz brickwall filter; independent of Rs.
[7]
Vi = Vi(max) = 1 V (RMS); fi = 1 kHz.
13. Application information
13.1 BTL application
When using the power amplifier in a mono BTL application the inputs of both channels
must be connected in parallel and the phase of one of the inputs must be inverted (see
Figure 6). In principle the loudspeaker can be connected between the outputs of the two
single-ended demodulation filters.
13.2 MODE pin
For pop-noise free start-up an RC time-constant must be applied on the MODE pin. The
bias-current setting of the VI-converter input is directly related to the voltage on the MODE
pin. In turn the bias-current setting of the VI converters is directly related to the DC output
offset voltage. Thus a slow dV/dt on the MODE pin results in a slow dV/dt for the DC
output offset voltage, resulting in pop-noise free start-up. A time-constant of 500 ms is
sufficient to guarantee pop-noise free start-up (see also Figure 4, 5 and 7).
13.3 Output power estimation
The achievable output powers in several applications (SE and BTL) can be estimated
using the following expressions:
SE:
P o ( 1% )
2
RL
-------------------- × V P × ( 1 – t min × f osc )
R L + 0.6
= ----------------------------------------------------------------------------------------2 × RL
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Preliminary data sheet
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TDA8922B
Philips Semiconductors
2 × 50 W class-D power amplifier
Maximum current (internally limited to 5 A):
V P × ( 1 – t min × f osc )
I o ( peak ) = -----------------------------------------------------R L + 0.6
(2)
BTL:
P o ( 1% )
2
RL
-------------------- × 2V P × ( 1 – t min × f osc )
R L + 1.2
= --------------------------------------------------------------------------------------------2 × RL
(3)
Maximum current (internally limited to 5 A):
2V P × ( 1 – t min × f osc )
I o ( peak ) = --------------------------------------------------------R L + 1.2
(4)
Variables:
RL = load impedance
fosc = oscillator frequency
tmin = minimum pulse width (typical 150 ns).
VP = single-sided supply voltage (so, if supply is ±30 V symmetrical, then VP = 30 V)
Po(1%) = output power just at clipping
Po(10%) = output power at THD = 10 %
Po(10%) = 1.24 × Po(1%).
13.4 External clock
When using an external clock the following accuracy of the duty cycle of the external clock
has to be taken into account: 47.5 % < δ < 52.5 %.
If two or more class-D amplifiers are used in the same audio application, it is strongly
recommended that all devices run at the same switching frequency.This can be realized
by connecting all OSC pins together and feed them from an external central oscillator.
Using an external oscillator it is necessary to force pin OSC to a DC-level above SGND for
switching from the internal to an external oscillator. In this case the internal oscillator is
disabled and the PWM will be switched on the external frequency. The frequency range of
the external oscillator must be in the range as specified in the switching characteristics;
see Section 12.1.
In an application circuit:
• Internal oscillator: ROSC connected between pin OSC and VSSA
• External oscillator: connect the oscillator signal between pins OSC and SGND; delete
ROSC and COSC.
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Preliminary data sheet
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Rev. 01 — 1 October 2004
16 of 32
TDA8922B
Philips Semiconductors
2 × 50 W class-D power amplifier
13.5 Heatsink requirements
In some applications it may be necessary to connect an external heatsink to the
TDA8922B. Limiting factor is the 150 °C maximum junction temperature Tj(max) which
cannot be exceeded. The expression below shows the relationship between the maximum
allowable power dissipation and the total thermal resistance from junction to ambient:
T j ( max ) – T amb
R th ( j – a ) = -------------------------------------P diss
Pdiss is determined by the efficiency (η) of the TDA8922B. The efficiency measured in the
TDA8922B as a function of output power is given in Figure 19. The power dissipation can
be derived as function of output power Figure 18.
The derating curves (given for several values of the Rth(j-a)) are illustrated in Figure 8. A
maximum junction temperature Tj = 150 °C is taken into account. From Figure 8 the
maximum allowable power dissipation for a given heatsink size can be derived or the
required heatsink size can be determined at a required dissipation level.
mbl469
30
Pdiss
(W)
(1)
20
(2)
10
(3)
(4)
(5)
0
0
20
40
60
80
100
Tamb (°C)
(1) Rth(j-a) = 5 K/W.
(2) Rth(j-a) = 10 K/W.
(3) Rth(j-a) = 15 K/W.
(4) Rth(j-a) = 20 K/W.
(5) Rth(j-a) = 35 K/W.
Fig 8. Derating curves for power dissipation as a function of maximum ambient
temperature.
13.6 Output current limiting
To guarantee the robustness of the class-D amplifier the maximum output current which
can be delivered by the output stage is limited. An advanced OverCurrent Protection
(OCP) is included for each output power switch.
When the current flowing through any of the power switches exceeds the defined internal
threshold of 5 A (e.g. in case of a short-circuit to the supply lines or a short-circuit across
the load) the maximum output current of the amplifier will be regulated to 5 A.
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Rev. 01 — 1 October 2004
17 of 32
TDA8922B
Philips Semiconductors
2 × 50 W class-D power amplifier
The TDA8922B amplifier can distinguish between a low-ohmic short circuit condition and
other overcurrent conditions like dynamic impedance drops of the used loudspeakers. The
impedance threshold (Zth) depends on the supply voltage used.
Depending on the impedance of the short circuit the amplifier will react as follows:
1. Short-circuit impedance > Zth:
The maximum output current of the amplifier is regulated to 5 A, but the amplifier will
not shut-down its PWM outputs. Effectively this results in a clipping output signal
across the load (behavior is very similar to voltage clipping).
2. Short-circuit impedance < Zth:
The amplifier will limit the maximum output current to 5 A and at the same time the
capacitor on the PROT pin is discharged. When the voltage across this capacitor
drops below an internal threshold voltage the amplifier will shut-down completely and
an internal timer will be started.
A typical value for the capacitor on the PROT pin is 220 pF. After a fixed time of
100 ms the amplifier is switched on again. If the requested output current is still too
high the amplifier will switch-off again. Thus the amplifier will try to switch to the
Operating mode every 100 ms. The average dissipation will be low in this situation
because of this low duty cycle. If the overcurrent condition is removed the amplifier will
remain in Operating mode once restarted.
In this way the TDA8922B amplifier is fully robust against short circuit conditions while at
the same time so-called audio holes as a result of loudspeaker impedance drops are
eliminated.
13.7 Pumping effects
In a typical stereo half-bridge (Single-Ended (SE)) application the TDA8922B class-D
amplifier is supplied by a symmetrical voltage (e.g VDD = +26 V and VSS = −26 V). When
the amplifier is used in a SE configuration, a so-called ‘pumping effect’ can occur. During
one switching interval, energy is taken from one supply (e.g. VDD), while a part of that
energy is delivered back to the other supply line (e.g. VSS) and visa versa. When the
voltage supply source cannot sink energy, the voltage across the output capacitors of that
voltage supply source will increase: the supply voltage is pumped to higher levels. The
voltage increase caused by the pumping effect depends on:
•
•
•
•
•
Speaker impedance
Supply voltage
Audio signal frequency
Value of decoupling capacitors on supply lines
Source and sink currents of other channels.
The pumping effect should not cause a malfunction of either the audio amplifier and/or the
voltage supply source. For instance, this malfunction can be caused by triggering of the
undervoltage or overvoltage protection or unbalance protection of the amplifier.
Best remedy for pumping effects is to use the TDA8922B in a mono full-bridge application
or in case of stereo half-bridge application adapt the power supply (e.g. increase supply
decoupling capacitors).
9397 750 13357
Preliminary data sheet
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Rev. 01 — 1 October 2004
18 of 32
TDA8922B
Philips Semiconductors
2 × 50 W class-D power amplifier
13.8 Application schematic
Notes to the application schematic:
• A solid ground plane around the switching amplifier is necessary to prevent emission.
• 100 nF capacitors must be placed as close as possible to the power supply pins of the
TDA8922BTH.
• The internal heat spreader of the TDA8922BTH is internally connected to VSS.
• The external heatsink must be connected to the ground plane.
• Use a thermal conductive electrically non-conductive Sil-Pad® between the backside
of the TDA8922BTH and a small external heatsink.
• The differential inputs enable the best system level audio performance with
unbalanced signal sources. In case of hum due to floating inputs, connect the
shielding or source ground to the amplifier ground. Jumpers J1 and J2 are open on
set level and are closed on the stand-alone demo board.
• Minimum total required capacity per power supply line is 3300 µF.
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Preliminary data sheet
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Rev. 01 — 1 October 2004
19 of 32
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VDDA
10 Ω
L1 BEAD
R1
5.6 kΩ
VDDP
CON1
+25 V VDD
1
GND
2
3
−25 V VSS
C1
100 nF
C2
47 µF/35 V
C3
470 µF/35 V
C7
100 nF
C5
47 µF/35 V
C6
470 µF/35 V
C18
5.6 kΩ
470 nF
R10
C20
FB GND
OSC
12
7
C29
100 nF
6
14
C10
220 pF
OUT1
22
OUT1P
BOOT1
R9
22 Ω
C22
FB
GND
BOOT2 C27
OUT1M
C24
100
nF
15 nF
C28
220 pF
21
LS2
R13
10 Ω
470 nF
100 nF
100 nF
VSSA
FB GND
23
C33
220 pF
C36
100 nF
VSSA
VSSP
C31
C37
C38
C39
100 nF
100 nF
100 nF
VDDP
OUT2P
20
VSSP2
18
VDDP2
PROT
C35
24
R14
22 Ω
VSSP
C40
220 pF
C41
220 pF
FB
GND
C32
100
nF
001aab198
VDDP
VSSP
TDA8922B
C34
Fig 9. TDA8922BTH application diagram.
19
STABI
13
VSSD
1
OUT2M
L4
OUT2
4
VDDA
1 µF
680 nF
470 nF
330 nF
LS1
5
3
10 µH
22 µH
33 µH
47 µH
L3
C21
TDA8922BTH
IN2M
2Ω
4Ω
6Ω
8Ω
C11
220 pF
15 nF
2
IN2P
FB GND
VSSP
R7
10 Ω
17
U1
VSSA2
5.6 kΩ
100 nF
15
11
VDDA2
C30
1 nF
C26
R12
100 nF
VDDP
SINGLE ENDED
OUTPUT FILTER VALUES
LS1/LS2 L3/L4 C22/C31
2 × 50 W class-D power amplifier
20 of 32
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
IN2
C16
9
SGND1
SGND2
470 nF
C15
16
IN1M
470 nF
5.6 kΩ
C14
C19
220 pF
FB GND
R11
47 µF/
63 V
R6
30 kΩ
C9
100 nF
n.c.
5.6 kΩ
IN1P 10
8
VSSP
C8
VSSP1
100 nF
VDDP
VDDP1
100 nF
OPERATE/MUTE
VSSA
VSSA
100 µF/10 V
MODE
C13
S2
ON/OFF
VSSA1
Rev. 01 — 1 October 2004
R8
VSSA
C12
VDDA1
FB GND
C25
1 nF
R4
5.6 kΩ
S1
VSSP
VDDA
C23
1 nF
5.6 kΩ
DZ1
5V6
R5
10 Ω
C17
1 nF
R3
C4
L2 BEAD
IN1
Philips Semiconductors
9397 750 13357
Preliminary data sheet
VDDP
R2
TDA8922B
Philips Semiconductors
2 × 50 W class-D power amplifier
13.9 Curves measured in reference design
001aab199
102
(THD + N)/S
(%)
10
001aab200
102
(THD + N)/S
(%)
10
1
1
(1)
(2)
10−1
(1)
(2)
10−1
(3)
(3)
10−2
10−3
10−2
10−2
10−1
1
10
102
103
Po (W)
VP = ±26 V; 2 × 6 Ω SE configuration.
10−3
10−2
10−1
102
10
Po (W)
VP = ±26 V; 2 × 8 Ω SE configuration.
(1) f = 6 kHz.
(1) f = 6 kHz.
(2) f = 1 kHz.
(2) f = 1 kHz.
(3) f = 100 Hz.
(3) f = 100 Hz.
Fig 10. (THD + N)/S as a function of output power; SE
configuration with 2 × 6 Ω load.
001aab201
102
(THD + N)/S
(%)
1
Fig 11. (THD + N)/S as a function of output power; SE
configuration with 2 × 8 Ω load.
001aab202
102
(THD + N)/S
(%)
10
10
1
1
(1)
10−1
10−2
10−3
10−2
10−1
(2)
10−2
(3)
10−1
1
10
(1)
102
103
Po (W)
VP = ±21 V; 1 × 8 Ω BTL configuration.
(2)
10−3
10
102
103
104
105
f (Hz)
VP = ±26 V; 2 × 6 Ω SE configuration.
(1) f = 6 kHz.
(1) Po = 10 W.
(2) f = 1 kHz.
(2) Po = 1 W.
(3) f = 100 Hz.
Fig 12. (THD + N)/S as a function of output power; BTL
configuration with 8 Ω load.
Fig 13. (THD + N)/S as function of frequency, SE
configuration with 2 × 6 Ω load.
9397 750 13357
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Rev. 01 — 1 October 2004
21 of 32
TDA8922B
Philips Semiconductors
2 × 50 W class-D power amplifier
001aab203
102
(THD + N)/S
(%)
001aab204
102
(THD + N)/S
(%)
10
10
1
1
10−1
10−1
(1)
(1)
(2)
10−2
(2)
10−2
10−3
10
102
103
104
105
10−3
10
102
103
104
105
f (Hz)
f (Hz)
VP = ±26 V; 2 × 8 Ω SE configuration.
VP = ±21 V; 1 × 8 Ω BTL configuration.
(1) Po = 10 W.
(1) Po = 10 W.
(2) Po = 1 W.
(2) Po = 1 W.
Fig 14. (THD + N)/S as function of frequency, SE
configuration with 2 × 8 Ω load.
Fig 15. (THD + N)/S as function of frequency, BTL
configuration with 8 Ω load.
001aab205
0
αcs
(dB)
−20
001aab206
0
αcs
(dB)
−20
−40
−40
−60
−60
(1)
(1)
(2)
(2)
−80
−80
−100
10
102
103
104
105
−100
10
102
103
104
VP = ±26 V; 2 × 6 Ω SE configuration.
VP = ±26 V; 2 × 8 Ω SE configuration.
(1) Po = 10 W.
(1) Po = 10 W.
(2) Po = 1 W.
(2) Po = 1 W.
Fig 16. Channel separation as a function of frequency;
SE configuration with 2 × 6 Ω load.
Fig 17. Channel separation as a function of frequency;
SE configuration with 2 × 8 Ω load.
9397 750 13357
Preliminary data sheet
105
f (Hz)
f (Hz)
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Rev. 01 — 1 October 2004
22 of 32
TDA8922B
Philips Semiconductors
2 × 50 W class-D power amplifier
001aab207
20
001aab208
100
η
(%)
(2)
(1)
Ptot
(W)
16
(1)
80
12
(2)
60
(3)
(3)
8
40
4
20
0
10−2
10−1
1
10
102
103
Po (W)
f = 1 kHz.
0
0
40
80
120
160
200
Po (W)
f = 1 kHz.
(1) VP = ±21 V; 1 × 8 Ω BTL configuration.
(1) VP = ±26 V; 2 × 8 Ω SE configuration.
(2) VP = ±26 V; 2 × 6 Ω SE configuration.
(2) VP = ±26 V; 2 × 6 Ω SE configuration.
(3) VP = ±26 V; 2 × 8 Ω SE configuration.
(3) VP = ±21 V; 1 × 8 Ω BTL configuration.
Fig 18. Power dissipation as a function of total output
power.
001aab209
120
Fig 19. Efficiency as a function of total output power.
001aab210
200
Po
(W)
160
Po
(W)
(1)
80
120
(1)
(2)
80
(3)
(2)
40
(3)
40
0
0
10
15
20
25
30
35
10
15
20
25
VS (V)
35
VS (V)
(THD + N)/S = 0.5 %; f = 1 kHz.
(THD + N)/S = 10 %; f = 1 kHz.
(1) 1 × 8 Ω BTL configuration.
(1) 1 × 8 Ω BTL configuration.
(2) 2 × 6 Ω SE configuration.
(2) 2 × 6 Ω SE configuration.
(3) 2 × 8 Ω SE configuration.
(3) 2 × 8 Ω SE configuration.
Fig 20. Output power as a function of supply voltage;
(THD + N)/S = 0.5 %.
Fig 21. Output power as a function of supply voltage;
(THD + N)/S = 10 %.
9397 750 13357
Preliminary data sheet
30
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Rev. 01 — 1 October 2004
23 of 32
TDA8922B
Philips Semiconductors
2 × 50 W class-D power amplifier
001aab211
45
G
(dB)
001aab212
45
G
(dB)
40
40
(1)
35
(1)
35
30
(2)
30
(2)
(3)
(3)
25
25
20
10
102
103
104
20
105
10
102
103
104
105
f (Hz)
f (Hz)
Vi = 100 mV; Rs = 0 Ω; Ci = 330 pF.
Vi = 100 mV; Rs = 5.6 kΩ; Ci = 330 pF.
(1) VP = ±21 V; 1 × 8 Ω BTL configuration.
(1) VP = ±21 V; 1 × 8 Ω BTL configuration.
(2) VP = ±26 V; 2 × 6 Ω SE configuration.
(2) VP = ±26 V; 2 × 6 Ω SE configuration.
(3) VP = ±26 V; 2 × 8 Ω SE configuration.
(3) VP = ±26 V; 2 × 8 Ω SE configuration.
Fig 22. Gain as a function of frequency; Rs = 5.6 kΩ
and Ci = 330 pF.
Fig 23. Gain as a function of frequency; Rs = 0 Ω and
Ci = 330 pF.
001aab213
0
Vo
(V)
SVRR
(dB)
001aab214
10
1
−20
10−1
−40
10−2
(1)
10−3
−60
(2)
10−4
(3)
−80
10−5
−100
10
102
103
104
105
10−6
0
2
4
f (Hz)
VP = ±26 V; Vripple = 2 V (p-p).
6
Vmode (V)
Vi = 100 mV; f = 1 kHz.
(1) Both supply lines rippled.
(2) Both supply lines rippled in anti phase.
(3) One supply line rippled.
Fig 24. SVRR as a function of frequency.
Fig 25. Output voltage as a function of mode voltage.
9397 750 13357
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Rev. 01 — 1 October 2004
24 of 32
TDA8922B
Philips Semiconductors
2 × 50 W class-D power amplifier
001aab215
120
S/N
(dB)
(1)
(2)
80
40
0
10−2
10−1
1
10
102
103
Po (W)
VP = ±26 V; Rs = 5.6 kΩ; 20 kHz AES17 filter.
(1) 2 × 6 Ω SE configuration and 2 × 8 Ω SE configuration.
(2) 1 × 8 Ω BTL configuration.
Fig 26. S/N ratio as a function of output power.
14. Test information
14.1 Quality information
The General Quality Specification for Integrated Circuits, SNW-FQ-611 is applicable.
9397 750 13357
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Rev. 01 — 1 October 2004
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TDA8922B
Philips Semiconductors
2 × 50 W class-D power amplifier
15. Package outline
HSOP24: plastic, heatsink small outline package; 24 leads; low stand-off height
SOT566-3
E
D
A
x
X
c
E2
y
HE
v M A
D1
D2
12
1
pin 1 index
Q
A
A2
E1
(A3)
A4
θ
Lp
detail X
24
13
Z
w M
bp
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
A2
max.
3.5
3.5
3.2
A3
0.35
A4(1)
D1
D2
E(2)
E1
E2
e
HE
Lp
Q
+0.08 0.53 0.32 16.0 13.0
−0.04 0.40 0.23 15.8 12.6
1.1
0.9
11.1
10.9
6.2
5.8
2.9
2.5
1
14.5
13.9
1.1
0.8
1.7
1.5
bp
c
D(2)
v
w
x
y
0.25 0.25 0.03 0.07
Z
θ
2.7
2.2
8°
0°
Notes
1. Limits per individual lead.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
03-02-18
03-07-23
SOT566-3
Fig 27. HSOP24 package outline.
9397 750 13357
Preliminary data sheet
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Rev. 01 — 1 October 2004
26 of 32
TDA8922B
Philips Semiconductors
2 × 50 W class-D power amplifier
DBS23P: plastic DIL-bent-SIL power package; 23 leads (straight lead length 3.2 mm)
SOT411-1
non-concave
Dh
x
D
Eh
view B: mounting base side
A2
d
A5
A4
β
E2
B
j
E
E1
L2
L3
L1
L
1
e1
Z
e
0
5
v M
e2
m
w M
bp
c
Q
23
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A 2
mm
A4
A5
bp
c
D (1)
d
D h E (1)
e
e1
e2
12.2
4.6 1.15 1.65 0.75 0.55 30.4 28.0
12
2.54 1.27 5.08
11.8
4.3 0.85 1.35 0.60 0.35 29.9 27.5
Eh
E1
E2
j
L
6 10.15 6.2 1.85 3.6
9.85 5.8 1.65 2.8
L1
L2
L3
m
Q
v
w
x
β
Z (1)
14 10.7 2.4
1.43
2.1
4.3
0.6 0.25 0.03 45°
13 9.9 1.6
0.78
1.8
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
98-02-20
02-04-24
SOT411-1
Fig 28. DBS23P package outline.
9397 750 13357
Preliminary data sheet
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Rev. 01 — 1 October 2004
27 of 32
TDA8922B
Philips Semiconductors
2 × 50 W class-D power amplifier
16. Soldering
16.1 Introduction
This text gives a very brief insight to a complex technology. A more in-depth account of
soldering ICs can be found in our Data Handbook IC26; Integrated Circuit Packages
(document order number 9398 652 90011).
There is no soldering method that is ideal for all IC packages. Wave soldering is often
preferred when through-hole and surface mount components are mixed on one
printed-circuit board. Wave soldering can still be used for certain surface mount ICs, but it
is not suitable for fine pitch SMDs. In these situations reflow soldering is recommended.
Driven by legislation and environmental forces the worldwide use of lead-free solder
pastes is increasing.
16.2 Through-hole mount packages
16.2.1 Soldering by dipping or by solder wave
Typical dwell time of the leads in the wave ranges from 3 seconds to 4 seconds at 250 °C
or 265 °C, depending on solder material applied, SnPb or Pb-free respectively.
The total contact time of successive solder waves must not exceed 5 seconds.
The device may be mounted up to the seating plane, but the temperature of the plastic
body must not exceed the specified maximum storage temperature (Tstg(max)). If the
printed-circuit board has been pre-heated, forced cooling may be necessary immediately
after soldering to keep the temperature within the permissible limit.
16.2.2 Manual soldering
Apply the soldering iron (24 V or less) to the lead(s) of the package, either below the
seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is
less than 300 °C it may remain in contact for up to 10 seconds. If the bit temperature is
between 300 °C and 400 °C, contact may be up to 5 seconds.
16.3 Surface mount packages
16.3.1 Reflow soldering
Reflow soldering requires solder paste (a suspension of fine solder particles, flux and
binding agent) to be applied to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
Several methods exist for reflowing; for example, convection or convection/infrared
heating in a conveyor type oven. Throughput times (preheating, soldering and cooling)
vary between 100 seconds and 200 seconds depending on heating method.
Typical reflow peak temperatures range from 215 °C to 270 °C depending on solder paste
material. The top-surface temperature of the packages should preferably be kept:
• below 225 °C (SnPb process) or below 245 °C (Pb-free process)
– for all BGA, HTSSON..T and SSOP..T packages
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TDA8922B
Philips Semiconductors
2 × 50 W class-D power amplifier
– for packages with a thickness ≥ 2.5 mm
– for packages with a thickness < 2.5 mm and a volume ≥ 350 mm3 so called
thick/large packages.
• below 240 °C (SnPb process) or below 260 °C (Pb-free process) for packages with a
thickness < 2.5 mm and a volume < 350 mm3 so called small/thin packages.
Moisture sensitivity precautions, as indicated on packing, must be respected at all times.
16.3.2 Wave soldering
Conventional single wave soldering is not recommended for surface mount devices
(SMDs) or printed-circuit boards with a high component density, as solder bridging and
non-wetting can present major problems.
To overcome these problems the double-wave soldering method was specifically
developed.
If wave soldering is used the following conditions must be observed for optimal results:
• Use a double-wave soldering method comprising a turbulent wave with high upward
pressure followed by a smooth laminar wave.
• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be
parallel to the transport direction of the printed-circuit board;
– smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the
transport direction of the printed-circuit board.
The footprint must incorporate solder thieves at the downstream end.
• For packages with leads on four sides, the footprint must be placed at a 45° angle to
the transport direction of the printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
During placement and before soldering, the package must be fixed with a droplet of
adhesive. The adhesive can be applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the adhesive is cured.
Typical dwell time of the leads in the wave ranges from 3 seconds to 4 seconds at 250 °C
or 265 °C, depending on solder material applied, SnPb or Pb-free respectively.
A mildly-activated flux will eliminate the need for removal of corrosive residues in most
applications.
16.3.3 Manual soldering
Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage
(24 V or less) soldering iron applied to the flat part of the lead. Contact time must be
limited to 10 seconds at up to 300 °C.
When using a dedicated tool, all other leads can be soldered in one operation within
2 seconds to 5 seconds between 270 °C and 320 °C.
9397 750 13357
Preliminary data sheet
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Rev. 01 — 1 October 2004
29 of 32
TDA8922B
Philips Semiconductors
2 × 50 W class-D power amplifier
16.4 Package related soldering information
Table 11:
Suitability of IC packages for wave, reflow and dipping soldering methods
Package [1]
Mounting
Through-hole mount
Soldering method
Wave
Reflow [2]
Dipping
CPGA, HCPGA
suitable
−
−
DBS, DIP, HDIP, RDBS, SDIP, SIL
suitable [3]
−
suitable
Through-hole-surface
mount
PMFP [4]
not suitable
not suitable
−
Surface mount
BGA, HTSSON..T [5], LBGA,
LFBGA, SQFP, SSOP..T [5],
TFBGA, VFBGA, XSON
not suitable
suitable
−
DHVQFN, HBCC, HBGA, HLQFP,
HSO, HSOP, HSQFP, HSSON,
HTQFP, HTSSOP, HVQFN,
HVSON, SMS
not suitable [6]
suitable
−
PLCC [7], SO, SOJ
suitable
suitable
−
not
recommended [7] [8]
suitable
−
SSOP, TSSOP, VSO, VSSOP
not
recommended [9]
suitable
−
CWQCCN..L [10], WQCCN..L [10]
not suitable
not suitable
−
LQFP, QFP, TQFP
[1]
For more detailed information on the BGA packages refer to the (LF)BGA Application Note (AN01026); order a copy from your Philips
Semiconductors sales office.
[2]
All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with
respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of
the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the Data Handbook IC26; Integrated
Circuit Packages; Section: Packing Methods.
[3]
For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.
[4]
Hot bar soldering or manual soldering is suitable for PMFP packages.
[5]
These transparent plastic packages are extremely sensitive to reflow soldering conditions and must on no account be processed
through more than one soldering cycle or subjected to infrared reflow soldering with peak temperature exceeding 217 °C ± 10 °C
measured in the atmosphere of the reflow oven. The package body peak temperature must be kept as low as possible.
[6]
These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder cannot penetrate
between the printed-circuit board and the heatsink. On versions with the heatsink on the top side, the solder might be deposited on the
heatsink surface.
[7]
If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction. The package footprint
must incorporate solder thieves downstream and at the side corners.
[8]
Wave soldering is suitable for LQFP, QFP and TQFP packages with a pitch (e) larger than 0.8 mm; it is definitely not suitable for
packages with a pitch (e) equal to or smaller than 0.65 mm.
[9]
Wave soldering is suitable for SSOP, TSSOP, VSO and VSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely
not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
[10] Image sensor packages in principle should not be soldered. They are mounted in sockets or delivered pre-mounted on flex foil.
However, the image sensor package can be mounted by the client on a flex foil by using a hot bar soldering process. The appropriate
soldering profile can be provided on request.
17. Revision history
Table 12:
Revision history
Document ID
Release date
Data sheet status
Change notice
Order number
Supersedes
TDA8922B_1
20041001
Preliminary data sheet
-
9397 750 13357
-
9397 750 13357
Preliminary data sheet
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Rev. 01 — 1 October 2004
30 of 32
TDA8922B
Philips Semiconductors
2 × 50 W class-D power amplifier
18. Data sheet status
Level
Data sheet status [1]
Product status [2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
19. Definitions
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
21. Trademarks
20. Disclaimers
Sil-Pad — is a registered trademark of The Bergquist
Company.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
22. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [email protected]
9397 750 13357
Preliminary data sheet
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Rev. 01 — 1 October 2004
31 of 32
TDA8922B
Philips Semiconductors
2 × 50 W class-D power amplifier
23. Contents
1
2
3
4
5
6
7
7.1
7.2
8
8.1
8.2
8.3
8.3.1
8.3.2
8.3.3
8.3.4
8.4
9
10
11
12
12.1
12.2
12.3
13
13.1
13.2
13.3
13.4
13.5
13.6
13.7
13.8
13.9
14
14.1
15
16
16.1
16.2
16.2.1
16.2.2
16.3
16.3.1
General description . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Pinning information . . . . . . . . . . . . . . . . . . . . . . 4
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4
Functional description . . . . . . . . . . . . . . . . . . . 5
General . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Pulse width modulation frequency . . . . . . . . . . 8
Protections . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
OverTemperature Protection (OTP) . . . . . . . . . 8
OverCurrent Protection (OCP) . . . . . . . . . . . . . 8
Window Protection (WP). . . . . . . . . . . . . . . . . . 9
Supply voltage protections . . . . . . . . . . . . . . . . 9
Differential audio inputs . . . . . . . . . . . . . . . . . 10
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . 11
Thermal characteristics. . . . . . . . . . . . . . . . . . 11
Static characteristics. . . . . . . . . . . . . . . . . . . . 11
Dynamic characteristics . . . . . . . . . . . . . . . . . 13
Switching characteristics . . . . . . . . . . . . . . . . 13
Stereo and dual SE application . . . . . . . . . . . 13
Mono BTL application . . . . . . . . . . . . . . . . . . . 14
Application information. . . . . . . . . . . . . . . . . . 15
BTL application . . . . . . . . . . . . . . . . . . . . . . . . 15
MODE pin . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Output power estimation. . . . . . . . . . . . . . . . . 15
External clock . . . . . . . . . . . . . . . . . . . . . . . . . 16
Heatsink requirements . . . . . . . . . . . . . . . . . . 17
Output current limiting. . . . . . . . . . . . . . . . . . . 17
Pumping effects . . . . . . . . . . . . . . . . . . . . . . . 18
Application schematic . . . . . . . . . . . . . . . . . . . 19
Curves measured in reference design . . . . . . 21
Test information . . . . . . . . . . . . . . . . . . . . . . . . 25
Quality information . . . . . . . . . . . . . . . . . . . . . 25
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 26
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Through-hole mount packages . . . . . . . . . . . . 28
Soldering by dipping or by solder wave . . . . . 28
Manual soldering . . . . . . . . . . . . . . . . . . . . . . 28
Surface mount packages . . . . . . . . . . . . . . . . 28
Reflow soldering . . . . . . . . . . . . . . . . . . . . . . . 28
16.3.2
16.3.3
16.4
17
18
19
20
21
22
Wave soldering. . . . . . . . . . . . . . . . . . . . . . . .
Manual soldering . . . . . . . . . . . . . . . . . . . . . .
Package related soldering information . . . . . .
Revision history . . . . . . . . . . . . . . . . . . . . . . .
Data sheet status. . . . . . . . . . . . . . . . . . . . . . .
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . .
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . .
Contact information . . . . . . . . . . . . . . . . . . . .
29
29
30
30
31
31
31
31
31
© Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 1 October 2004
Document order number: 9397 750 13357
Published in The Netherlands
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