GaN and SiC RF Power Transistor Selection Guide ( 1.34 MB )

GaN BroadBand 2.7 - 3.5 GHz, 100W, 11 dB
140
GaN 2.7 - 2.9 GHz , 280W, 14 dB Gain, 55% Efficiency
15
120
14
450
18
400
16
13
80
60(W)
Pout
8
6
2
100
0
10
2.5
2.7
2.9
3.1
Frequency (GHz)
3.3
3.5
0
4
3.7
6
8
Pin (W)
0405SC-2200M: Pin vs Pout /
0405SC-2200M
Gain
0405SC-2200M: Pin vs Pout
Pin/
2500
Gain
vs Pout / Gain
2000
2500
9
8
9
7
8
2000
1500
1500
1000(W)
Pout
6
1000(W)
Pout
500
5
6
7
5
Pout
Gain
0
0 Eff
0405SC-2200M: Pout vs Drain
450MHz, 300us 6%, 125V0
50
100
150
200
3 300
250
Pin (W)
50
100
150
200
250
300
Pout
Gain
Gain (dB)
4
Gain (dB)
3
4
0
500
2
350
400
2
350
400
Pin (W)
0405SC-2200M: Pout vs Drain Eff
0405SC-2200M
450MHz, 300us 6%, 125V
Pin vs Drain Eff
70%
60%
Drain Eff
50%
40%
Drain Eff
30%
Drain Eff (%)
20%
750
1000
1250
Pout (W)
1500
1750
2000
2250
450MHz, 300µs6%, 125V
2500
10%
0%
0
250
500
750
1000
1250
Pout (W)
1500
1750
2000
11
Gp (dB)
180
Pout (W)
9
8
140
7
4
150
11
20
12
10
10
250
Gain (dB)Pout (W)
200
12
13
220
12
300
40
14
260
14
350
100
GaN 3.1 - 3.5 GHz, 180W Pout, 12 dB Gain
300
2250
2500
10
12
2.7GHz
14
2.8GHz
2.9GHz
100
6
5
6
7
8
9
10
Pin (W)
11
12
3.2GHz
13
3.3GHz
14
3.5Ghz
Gain (dB)
Frequency
2.7 - 3.5 GHz
2.7 - 2.9 GHz
2.7 - 3.1 GHz
3.1 - 3.5 GHz
Pulse Format
300 us, 10%
100 us, 10%
200 us, 10%
300 us, 10%
Model No.
2735GN-100
2735GN-30
2729GN-270
Power (typ)
100 W
30 W
280 W
2729GN-150
160 W
2731GN-200
220 W
2731GN-110
120 W
3135GN-170
180 W
3135GN-100
115 W
Power Gain (typ)
11 dB
11 dB
13 ~ 14dB
13 ~ 14dB
12 ~ 13 dB
12 ~ 13 dB
11~ 12 dB
11~ 12 dB