BSC036NE7NS3 G Data Sheet (592 KB, EN)

BSC036NE7NS3 G
OptiMOSTM3 Power-Transistor
Product Summary
Features
• Optimized technology for synchronous rectification
• Ideal for high frequency switching and DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
VDS
75
V
RDS(on),max
3.6
mW
ID
100
A
• Superior thermal resistance
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Halogen-free according to IEC61249-2-21
Type
BSC036NE7NS3 G
Package
PG-TDSON-8
Marking
036NE7NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
V GS=10 V, T C=25 °C
100
V GS=10 V, T C=100 °C
100
V GS=10 V, T A=25 °C,
R thJA=50 K/W 2)
20
Unit
A
Pulsed drain current3)
I D,pulse
T C=25 °C
400
Avalanche energy, single pulse
E AS
I D=50 A, R GS=25 W
260
mJ
Gate source voltage
V GS
±20
V
1)
J-STD20 and JESD22
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See figure 3 for more detailed information
4)
See figure 13 for more detailed information
Rev. 2.0
page 1
2011-09-29
BSC036NE7NS3 G
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot
Value
T C=25 °C
156
T A=25 °C,
T j, T stg
-55 ... 150
IEC climatic category; DIN IEC 68-1
Parameter
W
2.5
R thJA=50 K/W 2)
Operating and storage temperature
Unit
°C
55/150/56
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
0.8
top
-
-
18
minimal footprint
-
-
62
6 cm2 cooling area2)
-
-
50
Thermal characteristics
Thermal resistance, junction - case
Device on PCB
R thJC
R thJA
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
75
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=110 µA
2,3
3,1
3,8
Zero gate voltage drain current
I DSS
V DS=75 V, V GS=0 V,
T j=25 °C
-
0.1
1
V DS=75 V, V GS=0 V,
T j=125 °C
-
10
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=50 A
-
2.9
3.6
mW
Gate resistance
RG
-
2.7
-
W
Transconductance
g fs
50
100
-
S
Rev. 2.0
|V DS|>2|I D|R DS(on)max,
I D=50 A
page 2
2011-09-29
BSC036NE7NS3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
4400
-
-
990
-
Dynamic characteristics
Input capacitance
C iss
V GS=0 V, V DS=37,5 V,
f =1 MHz
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
48
-
Turn-on delay time
t d(on)
-
14
-
Rise time
tr
-
18
-
Turn-off delay time
t d(off)
-
38
-
Fall time
tf
-
10
-
Gate to source charge
Q gs
-
22.1
-
Gate to drain charge
Q gd
-
12.6
-
-
21.0
-
V DD=37.5 V,
V GS=10 V, I D=25 A,
R G=1.6 W
pF
ns
Gate Charge Characteristics5)
V DD=37,5 V, I D=50 A,
V GS=0 to 10 V
nC
Switching charge
Q sw
Gate charge total
Qg
-
63.4
-
Gate plateau voltage
V plateau
-
5.0
-
Output charge
Q oss
-
65
-
-
-
100
-
-
400
-
0.9
1.2
V
-
44
-
ns
-
64
-
nC
V DD=37,5 V, V GS=0 V
V
Reverse Diode
Diode continuous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
5)
Q rr
A
T C=25 °C
V GS=0 V, I F=50 A,
T j=25 °C
V R=37.5 V, I F=25A,
di F/dt =100 A/µs
See figure 16 for gate charge parameter definition
Rev. 2.0
page 3
2011-09-29
BSC036NE7NS3 G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
175
120
150
100
125
100
ID [A]
Ptot [W]
80
60
75
40
50
20
25
0
0
0
25
50
75
100
125
150
175
0
25
50
TC [°C]
75
100
125
150
175
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
103
1
limited by on-state
resistance
1 µs
10 µs
0.5
102
100 µs
ZthJC [K/W]
ID [A]
0.2
101
1 ms
0.1
0.1
0.05
10 ms
100
0.02
DC
0.01
single pulse
10-1
0.01
10-1
100
101
102
VDS [V]
Rev. 2.0
0
0
0
0
0
0
1
10-6
10-5
10-4
10-3
10-2
10-1
100
tp [s]
page 4
2011-09-29
BSC036NE7NS3 G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
400
12
10 V
360
7V
10
320
5V
280
5.5 V
6V
RDS(on) [mW]
8
ID [A]
240
200
6V
160
6
7V
4
120
10 V
5.5 V
80
2
40
5V
4.5 V
0
0
1
2
0
3
0
100
200
VDS [V]
300
400
ID [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
200
160
160
120
120
ID [A]
gfs [S]
200
80
80
40
40
150 °C
25 °C
0
0
0
2
4
6
8
40
80
120
160
200
ID [A]
VGS [V]
Rev. 2.0
0
page 5
2011-09-29
BSC036NE7NS3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=50 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
8
4
6
3
1100 µA
max
VGS(th) [V]
RDS(on) [mW]
110 µA
4
2
typ
2
1
0
-60
-20
20
60
100
140
0
180
-60
-20
20
Tj [°C]
60
100
140
180
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
104
1000
Ciss
103
100
150 °C
IF [A]
C [pF]
Coss
102
10
25 °C
25°C, max
Crss
150°C, max
101
1
0
15
30
45
60
75
VDS [V]
Rev. 2.0
0.0
0.5
1.0
1.5
2.0
VSD [V]
page 6
2011-09-29
BSC036NE7NS3 G
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 W
V GS=f(Q gate); I D=50 A pulsed
parameter: T j(start)
parameter: V DD
100
12
40 V
10
20 V
100 °C
60 V
8
VGS [V]
IAV [A]
125 °C
25 °C
10
6
4
2
0
1
0.1
1
10
100
0
1000
10
20
30
40
50
60
70
Qgate [nC]
tAV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
90
V GS
Qg
85
VBR(DSS) [V]
80
75
V g s(th)
70
65
Q g (th)
Q sw
Q gs
60
-60
-20
20
60
100
140
Q gate
Q gd
180
Tj [°C]
Rev. 2.0
page 7
2011-09-29
BSC036NE7NS3 G
PG-TDSON-8 (SuperSO8)
Rev. 2.0
page 8
2011-09-29
BSC036NE7NS3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2011 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.0
page 9
2011-09-29
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