Comparing Spansion S34MS02G100/S34MS04G100 with Macronix MX30UF2G28AB/MX30UF4G28AB

APPLICATION NOTE
Comparing Spansion® S34MS02G100 and S34MS04G100 with
Macronix MX30UF2G28AB and MX30UF4G28AB
1. Introduction
This application note is a guide for comparing Macronix MX30UF2G28AB (2Gb) and
MX30UF4G28AB (4Gb) with Spansion® S34MS02G100 (2Gb) and S34MS04G100 (4Gb) 1.8V, x8
NAND flash memory.
The document does not provide detailed information on the individual devices, but highlights the
similarities and differences between them. The comparison covers the general features,
performance, command codes and other differences.
The information in this document is based on datasheets listed in Section 10. Newer versions of the
datasheets may override the contents of this document.
2. Features
Both flash device families have similar features and functions as shown in Table 2-1.
Table 2-1: Feature Comparison
Feature
Vcc voltage range
Bus Width
Operating Temperature
Interface
ECC Requirement
Block Size
Page Size
Plane Size
OTP size
Guaranteed Good blocks at
shipping
Unique ID
ID Code
ONFI signature
Data Retention
Package
P/N: AN0292
Macronix
MX30UF2G28AB (2Gb)
MX30UF4G28AB (4Gb)
1.7V ~ 1.95V
x8
-40°C ~ 85°C
ONFI 1.0 Standard
8b/(512B+28B)
128KB+7KB
2KB+112B
2Gb= 1024Blks/Plane x 2
4Gb= 2048Blks/Plane x 2
30 pages
Spansion
S34MS02G100 (2Gb)
S34MS04G100 (4Gb)
1.7V ~ 1.95V
x8
-40°C ~ 85°C
ONFI 1.0 Standard
1b/(512B+16B)
128KB+4KB
2KB+64B
2Gb= 1024Blks/Plane x 2
4Gb= 2048Blks/Plane x 2
64 pages
Block 0
Block 0 and 1
ONFI standard
2Gb=C2h/AAh/90h/15h/07h
4Gb=C2h/ACh/90h/15h/57h
4Fh/4Eh/46h/49h
10 Years
48-TSOP (12x20mm)
63-VFBGA (9x11mm)
2Gb=01h/AAh/90h/15h/44h
4Gb=01h/ACh/90h/15h/54h
4Fh/4Eh/46h/49h
10 Years
48-TSOP (12x20mm)
63-VFBGA (9x11mm)
1
Ver.1, Mar. 13, 2014
APPLICATION NOTE
Comparing Spansion® S34MS02G100 and S34MS04G100 with
Macronix MX30UF2G28AB and MX30UF4G28AB
3. Performance
While Table 3-1 and Table 3-2 show Macronix has improved Read and Erase performance, it
results in a higher average current (Table 4-1).
Table 3-1: Read Function Performance (Read Latency time and Sequential Read)
Macronix
Spansion
Read function
MX30UF2G28AB
S34MS02G100
MX30UF4G28AB
S34MS04G100
Read Latency time (tR)
25us (max.)
25us (max.)
Sequential Read time (tRC)
25ns (min.)
45ns (min.)
Table 3-2: Write Function Performance (Program and Erase)
Macronix
Write Function
MX30UF2G28AB
MX30UF4G28AB
Page Program time (tPROG)
250us (typ.)/700us (max.)
Block Erase time (tERASE)
3.5ms (typ.)/10ms (max.)
NOP
4 (max.)
1
Write/Erase Cycles* (Endurance)
100,000
Spansion
S34MS02G100
S34MS04G100
250us (typ.)/700us (max.)
3.5ms (typ.)/10ms (max.)
4 (max.)
100,000
Note: 100K Endurance cycle with ECC protection.
P/N: AN0292
2
Ver.1, Mar. 13, 2014
APPLICATION NOTE
Comparing Spansion® S34MS02G100 and S34MS04G100 with
Macronix MX30UF2G28AB and MX30UF4G28AB
4. DC Characteristics
Table 4-1: Read / Write Current
DC Characteristic
Sequential Read Current (ICC1)
Program Current (ICC2)
Erase Current (ICC3)
Standby Current – CMOS
Macronix
MX30UF2G28AB
MX30UF4G28AB
20mA (typ.)/30mA (max.)
20mA (typ.)/30mA (max.)
20mA (typ.)/30mA (max.)
10uA (typ.)/50uA (max.)
Spansion
S34MS02G100
S34MS04G100
10mA (typ.)/20mA (max.)
N/A (typ.)/20mA (max.)
N/A (typ.)/20mA (max.)
10uA (typ.)/50uA (max.)
Table 4-2: Input / Output Voltage
Macronix
Spansion
MX30UF2G28AB
S34MS02G100
MX30UF4G28AB
S34MS04G100
Input Low Voltage (VIL)
-0.3V (min.) / 0.2VCC (max.)
-0.3V (min.) / 0.2Vcc (max.)
Input High Voltage (VIH)
0.8VCC (min.) / VCC+0.3V (max.) 0.8Vcc (min.) / Vcc+0.3V (max.)
Output Low Voltage (VOL)
0.1V @ IOL = 2.1mA (max.)
0.1V @ IOL = 100uA (max.)
Output High Voltage (VOH) VCC-0.1V @ IOH= -400uA (min.) VCC-0.1V @ IOH= -100uA (min.)
DC Characteristic
P/N: AN0292
3
Ver.1, Mar. 13, 2014
APPLICATION NOTE
Comparing Spansion® S34MS02G100 and S34MS04G100 with
Macronix MX30UF2G28AB and MX30UF4G28AB
5. Package Pins
Package physical dimensions are similar to each other. For detailed information, please refer to the
individual datasheets. The Spansion NAND can be compared by the Macronix NAND without pin
conflicts. The devices only have one noticeable difference; the addition of the PT pin to enable the
Macronix Block Protection feature (48-TSOP pin 38 and 63-VFBGA pin G5). This same pin/ball is
not connected on the Spansion NAND, and can be left floating if the feature is not going to be used,
as the Macronix flash has a weak internal pull-down on the PT pin.
Figure 5-1: 48-TSOP (12x20mm) Package Pin Comparison
NC
NC
NC
NC
NC
NC
R/B#
RE#
CE#
NC
NC
VCC
VSS
NC
NC
CLE
ALE
WE#
WP#
NC
NC
NC
NC
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
MX30UF2G28AB-TI
MX30UF4G28AB-TI
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
VSS*1
NC
NC
NC
IO7
IO6
IO5
IO4
NC
VCC*1
PT
VCC
VSS
NC
VCC*1
NC
IO3
IO2
IO1
IO0
NC
NC
NC
VSS*1
NC
NC
NC
NC
NC
NC
R/B#
RE#
CE#
NC
NC
VCC
VSS
NC
NC
CLE
ALE
WE#
WP#
NC
NC
NC
NC
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
SM34S02G100TFI00
SM34S04G100TFI00
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
VSS*1
NC
NC
NC
I/O7
I/O6
I/O5
I/O4
NC
VCC*1
NC
VCC
VSS
NC
VCC*1
NC
I/O3
I/O2
I/O1
IO0
NC
NC
NC
VSS*1
Note: 1. These pins might not be connected internally. However it is
recommended to connect these pins to power(or ground) as designated for
ONFI compatibility.
Table 5-1: 48-TSOP Package Pin Differences
Brand
Part Name
Pin 38
P/N: AN0292
Macronix
Spansion
MX30UF2G28AB-TI and MX30UF4G28AB-TI
S34MS02G100TFI00 and S34MS04G100TFI00
PT (has weak internal pullpull-down)
(Nott Connected
ed))
NC (No
Connected
4
Ver.1, Mar. 13, 2014
APPLICATION NOTE
Comparing Spansion® S34MS02G100 and S34MS04G100 with
Macronix MX30UF2G28AB and MX30UF4G28AB
Figure 5-2: 63-VFBGA (9x11mm) Package Ball Comparison
MX30UF2G28AB-XKI and MX30UF4G28AB-XKI
1
2
A
NC
NC
B
NC
3
4
5
6
7
8
9
10
NC
NC
NC
NC
S34MS02G100BHI00 and S34MS04G100BHI00
1
2
A
NC
NC
B
NC
3
4
5
6
7
8
C
WP#
ALE
VSS
CE#
WE#
R/B#
C
WP#
ALE
VSS
CE#
WE#
R/B#
D
VCC
*1
RE#
CLE
NC
NC
NC
D
VCC
*1
RE#
CLE
NC
NC
NC
E
NC
NC
NC
NC
NC
NC
E
NC
NC
NC
NC
NC
NC
F
NC
NC
NC
NC
VSS
*1
NC
F
NC
NC
NC
NC
VSS
*1
NC
G
NC
VCC
*1
PT
NC
NC
NC
G
NC
VCC
*1
NC
NC
NC
NC
H
NC
IO0
NC
NC
NC
VCC
H
NC
I/O0
NC
NC
NC
Vcc
J
NC
IO1
NC
VCC
IO5
IO7
J
NC
I/O1
NC
Vcc
I/O5
I/O7
K
VSS
IO2
IO3
IO4
IO6
VSS
K
Vss
I/O2
I/O3
I/O4
I/O6
Vss
9
10
NC
NC
NC
NC
L
NC
NC
NC
NC
L
NC
NC
NC
NC
M
NC
NC
NC
NC
M
NC
NC
NC
NC
Note: 1. These pins might not be connected internally.
It is recommended to connect these pins to power(or ground) as
designated for ONFI compatibility.
Table 5-2: 63-VFBGA Package Pin Differences
Brand
Part Name
Ball G5
P/N: AN0292
Macronix
Spansion
MX30UF2G28AB-XKI and MX30UF4G28AB-XKI
S34MS02G100BHI00 and S34MS04G100BHI00
PT (has weak internal pullpull-down)
(Nott Connected
ed))
NC (No
Connected
5
Ver.1, Mar. 13, 2014
APPLICATION NOTE
Comparing Spansion® S34MS02G100 and S34MS04G100 with
Macronix MX30UF2G28AB and MX30UF4G28AB
6. Command Set
Basic command sets and status checking methods are the same (Table 6-1). Basic Two-Plane
commands are also the same (Table 6-2). Spansion also supports some non-ONFI multi-plane and
cache commands not supported by Macronix and not shown in Table 6-1.
Table 6-1: Command Table
Command
Macronix
MX30UF2G28AB
MX30UF4G28AB
Spansion
S34MS02G100
S34MS04G100
1st Cycle
2nd Cycle
1st Cycle
2nd Cycle
Read
00h
30h
00h
30h
Random Data Input
85h
-
85h
-
Random Data Output
05h
E0h
05h
E0h
Cache Read Random
00h
31h
00h
31h
Cache Read Sequential
31h
-
31h
-
Cache Read End
3Fh
-
3Fh
-
Read ID
90h
-
90h
-
Reset
FFh
-
FFh
-
Page Program
80h
10h
80h
10h
Cache Program
80h
15h
80h
15h
Block Erase
60h
D0h
60h
D0h
Read Status
70h
-
70h
-
Read Status Enhanced
78h
Read Parameter Page
ECh
Read Unique ID
EDh
-
Set Feature
EFh
-
Get Feature
EEh
-
P/N: AN0292
78h
-
6
ECh
-
Ver.1, Mar. 13, 2014
APPLICATION NOTE
Comparing Spansion® S34MS02G100 and S34MS04G100 with
Macronix MX30UF2G28AB and MX30UF4G28AB
Table 6-2: Two-Plane Command Table
Macronix
MX30UF2G28AB
MX30UF4G28AB
Command
Spansion
S34MS02G100
S34MS04G100
1st
Cycle
2nd
Cycle
3rd
Cycle
4th
Cycle
1st
Cycle
2nd
Cycle
3rd
Cycle
4th
Cycle
2 Plane Program
80h
11h
80h
10h
80h
11h
80h
10h
2 Plane Cache Program
80h
11h
80h
15h
80h
11h
80h
15h
2 Plane Block Erase
60h
D1h
60h
D0h
60h
D1h
60h
D0h
6-1 Status Register
When a flash Read/Program/Erase operation is in progress, either the “Ready/Busy# Pin Checking”
or “Status Output Checking” method may be used to monitor the operation. Both are standard
NAND flash algorithms and can be used for both device families. Table 6-3 shows that Status
Output content provided by the Read Status command (70h) is compatible.
Table 6-3: Status Output
Status Output
Macronix
MX30UF2G28AB
MX30UF4G28AB
Spansion
S34MS02G100
S34MS04G100
SR[0]
PGM/ERS status: Pass/Fail
PGM/ERS status: Pass/Fail
SR[1]
Cache Program status: Pass/Fail
Cache Program status: Pass/Fail
SR[2]
Not Used
Not Used
SR[3]
Not Used
Not Used
SR[4]
Not Used
Not Used
SR[5]
PGM/ERS/Read internal controller:
Ready/Busy
PGM/ERS/Read internal controller:
Ready/Busy
SR[6]
PGM/ERS/Read status: Ready/Busy
PGM/ERS/Read status: Ready/Busy
SR[7]
Write Protect
Write Protect
P/N: AN0292
7
Ver.1, Mar. 13, 2014
APPLICATION NOTE
Comparing Spansion® S34MS02G100 and S34MS04G100 with
Macronix MX30UF2G28AB and MX30UF4G28AB
7. Read ID Command
The ID codes of the Macronix and Spansion NAND flash differ in the manufacturer ID and in the
last byte for ECC level required.(Table 7-1).
Table 7-1: Manufacturer and Device IDs
ID code
Value
1st Code
2nd Code
IO1, IO0
IO3, IO2
3rd
Code
IO5, IO4
IO6
4th
Code
5th
Code
IO7
IO1, IO0
IO2
IO7, IO3
IO5, IO4
IO6
IO0, IO1
IO2, IO3
IO4~IO6
IO7
P/N: AN0292
Macronix
MX30UF2G28AB
MX30UF4G28AB
2Gb=C2h/AAh/90h/15h/07h
4Gb=C2h/ACh/90h/15h/57h
Spansion
S34MS02G100
S34MS04G100
2Gb=01h/AAh/90h/15h/44h
4Gb=01h/ACh/90h/15h/54h
Manufacturer Code
Device Identifier
Number of Die per Chip Enable
Cell Structure
Number of Simultaneously
Programmed Pages
Interleaved Programming
Between Multiple Chips
Cache Program
Page Size (excluding Spare Area)
Spare Area Size (per 512 Bytes)
Sequential Read Cycle Time (tRC)
Block Size (excluding Spare Area)
Organization
ECC Level Requirement
Number of Planes per Chip Enable
Plane Size
Reserved
Manufacturer Code
Device Identifier
Number of Die per Chip Enable
Cell Structure
Number of Simultaneously
Programmed Pages
Interleaved Programming
Between Multiple Chips
Cache Program
Page Size (excluding Spare Area)
Spare Area Size (per 512 Bytes)
Serial Access Time (tRC)
Block Size (excluding Spare Area)
Organization
Reserved
Number of Planes per Chip Enable
Plane Size
Reserved
8
Ver.1, Mar. 13, 2014
APPLICATION NOTE
Comparing Spansion® S34MS02G100 and S34MS04G100 with
Macronix MX30UF2G28AB and MX30UF4G28AB
8. Power-Up Timing
Macronix and Spansion® Power-up sequences are similar, but the timing is slightly different.
Although both devices use 1.7V (VCC min.) as the start point to activate the internal initialization
sequence, timing parameters used to identify the end of the sequence are different.
Table 8-1: Power-Up Timing
H/W Timing Characteristic
Vcc (min.) to WE# low
Vcc (min.) to R/B# high
Vcc (min.) to R/B# low
Macronix
MX30UF2G28AB
MX30UF4G28AB
1ms (max.)
N/A
10us (max.)
Spansion
S34MS02G100
S34MS04G100
N/A
5ms (max.)
100us (max.)
Vcc(min.)
VCC
WE#
R/B#
Figure 8-1: Power-Up Timing
P/N: AN0292
9
Ver.1, Mar. 13, 2014
APPLICATION NOTE
Comparing Spansion® S34MS02G100 and S34MS04G100 with
Macronix MX30UF2G28AB and MX30UF4G28AB
9. Summary
Macronix MX30UF2G28AB/MX30UF4G28AB and Spansion® S34MS02G100/S34MS04G100 1.8V
2Gb and 4Gb NAND have similar features and pinouts. Basic Read/Program/Erase commands are
the same. Overall, device comparing may require minimal or no firmware modifications, except
those that may be needed to accommodate differences in ECC requirements.
10. Reference
Table 10-1 shows the datasheet versions used for comparison in this application note. For the
most current, detailed Macronix specification, please refer to the Macronix website at
http://www.macronix.com
Table 10-1: Datasheet Version
Datasheet
MX30UF2G28AB/MX30UF4G28AB
S34MS01G1_04G1
Location
Website
Website
Date Issued
Nov. 22, 2013
Aug. 9, 2013
Revision
Rev. 0.00
Rev. 06
Note: Macronix datasheet is subject to change without notice.
11. Part Number Cross-Reference
Table 11-1: Part Number Cross Reference
Density
2Gb
4Gb
Macronix Part No.
MX30UF2G28AB-TI
MX30UF2G28AB-XKI
MX30UF4G28AB-TI
MX30UF4G28AB-XKI
Spansion Part No.
S34MS02G100TFI00
S34MS02G100BHI00
S34MS04G100TFI00
S34MS04G100BHI00
Package
48-TSOP
63-VFBGA
48-TSOP
63-VFBGA
Dimension
12x20mm
9x11mm
12x20mm
9x11mm
12. Revision History
Table 12-1: Revision History
Revision
1.0
P/N: AN0292
Description
Initial Release
10
Date
Mar. 13, 2014
Ver.1, Mar. 13, 2014
APPLICATION NOTE
Comparing Spansion® S34MS02G100 and S34MS04G100 with
Macronix MX30UF2G28AB and MX30UF4G28AB
Except for customized products which have been expressly identified in the applicable agreement,
Macronix's products are designed, developed, and/or manufactured for ordinary business, industrial,
personal, and/or household applications only, and not for use in any applications which may, directly or
indirectly, cause death, personal injury, or severe property damages. In the event Macronix products are
used in contradicted to their target usage above, the buyer shall take any and all actions to ensure said
Macronix's product qualified for its actual use in accordance with the applicable laws and regulations; and
Macronix as well as it’s suppliers and/or distributors shall be released from any and all liability arisen
therefrom.
Copyright© Macronix International Co., Ltd. 2014. All rights reserved, including the trademarks and
tradename thereof, such as Macronix, MXIC, MXIC Logo, MX Logo, Integrated Solutions Provider, NBit, Nbit,
NBiit, Macronix NBit, eLiteFlash, HybridNVM, HybridFlash, XtraROM, Phines, KH Logo, BE-SONOS, KSMC,
Kingtech, MXSMIO, Macronix vEE, Macronix MAP, Rich Au-dio, Rich Book, Rich TV, and FitCAM. The
names and brands of third party referred thereto (if any) are for identification purposes only.
For the contact and order information, please visit Macronix’s Web site at: http://www.macronix.com
P/N: AN0292
11
Ver.1, Mar. 13, 2014
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