APPLICATION NOTE Comparing Toshiba® TC58BVG0S3H with Macronix MX30LF1GE8AB 1. Introduction This application note is a guide for migrating to the Macronix MX30LF1GE8AB from the Toshiba TC58BVG0S3H 1Gb, 3V, Internal ECC NAND flash memory. The document does not provide detailed information on the individual devices, but highlights the major similarities and differences between them. The comparison covers the general features, performance, command codes and other differences. The information in this document is based on datasheets listed in Section 11. Newer versions of the datasheets may override the contents of this document. 2. Features Both flash device families have similar features and functions as shown in Table 2-1. Table 2-1: Feature Comparison Feature Macronix MX30LF1GE8AB Vcc Voltage Range 2.7V ~ 3.6V Bus Width x8 Operating Temperature -40°C ~ 85°C Interface ONFI 1.0 Standard Block Size 128KB+4KB Page Size 2KB+64B Internal ECC Capability 4b/528B OTP Size 30 pages Guaranteed Good Blocks at Block 0 Shipping Unique ID ONFI standard First Command ID Code C2h/F1h/80h/95h/82h ONFI Signature 4Fh/4Eh/46h/49h Data Retention 10 Years Package P/N: AN0369 48-TSOP (12x20mm) 1 Toshiba TC58BVG0S3H 2.7V ~ 3.6V x8 -40°C ~ 85°C 128KB+4KB 2KB+64B 8b/528B Block 0 Reset (FFh) 98h/F1h/80h/15h/F2h 48-TSOP (12x20mm) 63-VFBGA (9x11mm) Ver.1, Jan.28, 2015 APPLICATION NOTE Comparing Toshiba® TC58BVG0S3H with Macronix MX30LF1GE8AB 3. Performance Table 3-1 and Table 3-2 show MX30LF1GE8AB and TC58BVG0S3H Read/Write performance. Table 3-1: Read Performance (Read Latency and Sequential Read) Read function Macronix MX30LF1GE8AB Toshiba TC58BVG0S3H Read Latency time (tR_ECC) 45us (typ.) / 70us (max.) 40us (typ.) / 120us (max.) Sequential Read time (tRC) 20ns (min.) 25ns (min.) Table 3-2: Write Performance (Program and Erase) Write Function Macronix MX30LF1GE8AB Page Program time (tPROG_ECC) 320us (typ.) / 600us (max.) Block Erase time (tERASE) 1ms (typ.) / 3.5ms (max.) NOP 4 (max.) 1 Write/Erase Cycles* (Endurance) 100,000 Toshiba TC58BVG0S3H 330us (typ.) / 700us (max.) 2.5ms (typ.) / 5ms (max.) 4 (max.) - Note: 100K Endurance cycle with ECC protection. 4. DC Characteristics Read/Write power requirements (Table 4-1) and I/O voltage limits (Table 4-2) are similar. Table 4-1: Read / Write Current DC Characteristic Sequential Read Current (ICC1) Program Current (ICC2) Erase Current (ICC3) Standby Current – CMOS Macronix MX30LF1GE8AB 20mA (typ.) / 30mA (max.) 20mA (typ.) / 30mA (max.) 15mA (typ.) / 30mA (max.) 10uA (typ.) / 50uA (max.) Toshiba TC58BVG0S3H 30mA (max.) 30mA (max.) 30mA (max.) 50uA (max.) Table 4-2: Input / Output Voltage DC Characteristic Input Low Voltage (VIL) Input High Voltage (VIH) Output Low Voltage (VOL) Output High Voltage (VOH) P/N: AN0369 Macronix MX30LF1GE8AB -0.3V (min.) / 0.2VCC (max.) 0.8VCC (min.) / VCC+0.3V (max.) 0.2V (max.) VCC-0.2 (min.) 2 Toshiba TC58BVG0S3H -0.3V (min.) / 0.2Vcc (max.) 0.8Vcc (min.) / Vcc+0.3V (max.) 0.2V (max.) Vcc-0.2 (min.) Ver.1, Jan.28, 2015 APPLICATION NOTE Comparing Toshiba® TC58BVG0S3H with Macronix MX30LF1GE8AB 5. Package Pin Definition Package physical dimensions are similar to each other. For detailed information, please refer to the individual datasheets. Table 5-1 contains the differences in pin assignments between the Macronix and Toshiba devices TC58BVG0S3H can be compared by the MX30LF1GE8AB without pin conflicts. Only 48-TSOP pin #38 may need special attention because the pin is designated as DNU on the MX30LF1GE8AB-TI, but TC58BVG0S3HTAI0 is designated as NC. Figure 5-1: 48-TSOP (12x20mm) Package and Pin Layout Comparison NC NC NC NC NC NC R/B# RE# CE# NC NC VCC VSS NC NC CLE ALE WE# WP# NC NC NC NC NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 MX30LF1GE8AB VSS*1 NC NC NC IO7 IO6 IO5 IO4 NC VCC*1 DNU VCC VSS NC VCC*1 NC IO3 IO2 IO1 IO0 NC NC NC VSS*1 NC NC NC NC NC NC R/B# RE# CE# NC NC VCC VSS NC NC CLE ALE WE# WP# NC NC NC NC NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 TC58BVG0S3H 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 NC NC NC NC I/O7 I/O6 I/O5 I/O4 NC NC NC VCC VSS NC NC NC I/O3 I/O2 I/O1 IO0 NC NC NC NC Pin38: DNU Note: 1. These pins might not be connected internally. However it is recommended to connect these pins to power(or ground) as designated for ONFI compatibility. Table 5-1: 48-TSOP Package Pin Definition Brand Macronix Toshiba Part Name MX30LF1GE8AB-TI TC58BVG0S3HTAI0 DNU*1 NC*1 Pins #25, #48 VSS NC Pins #34, #39 VCC NC Pin #38 Note If pins are left unconnected, both pin functions are compatible Macronix pins 25 and 48 are not bonded internally and can be left unconnected. Macronix pins 34 and 39 are not bonded internally and can be left unconnected. Note 1: NC = Not Connected; DNU = Do Not Use P/N: AN0369 3 Ver.1, Jan.28, 2015 APPLICATION NOTE Comparing Toshiba® TC58BVG0S3H with Macronix MX30LF1GE8AB 6. Command Set 6-1 Basic Commands Basic command sets and status checking methods are similar. The Read and Write operation commands are similar. (Table 6-1). Table 6-1: Command Table Command Serial Data Input Random Data Input Random Data Output Page Read Read ID Reset Page Program Cache Program Block Erase Read Status ECC Status Read Read Parameter Pg. Unique ID Read Set Feature Get Feature P/N: AN0369 Macronix MX30LF1GE8AB 1st Cycle 2nd Cycle 85h 05h E0h 00h 30h 90h FFh 80h 10h 80h 15h 60h D0h 70h ECh EDh EFh EEh - 4 Toshiba TC58BVG0S3H 1st Cycle 80h 85h 05h 00h 90h FFh 80h 60h 70h 7Ah - 2nd Cycle E0h 30h 10h D0h - Ver.1, Jan.28, 2015 APPLICATION NOTE Comparing Toshiba® TC58BVG0S3H with Macronix MX30LF1GE8AB 6-2 Status Register When a Read, Program, or Erase operation is in progress, either the “Ready/Busy# Pin Checking” or “Status Output Checking” method may be used to monitor the operation. Both are standard NAND flash algorithms and can be used for both device families. Table 6-3 compares the Status Output provided by the Read Status command (70h). Macronix and Toshiba report ECC correction status in the Status Register, but bit usage and definitions are slightly different. Macronix uses SR[3] and SR[4] in combination with SR[0] to show detailed ECC correction status, so that user can decide when to rewrite data. Table 6-4 shows the meaning of each combination result. Toshiba provides an ECC Status Read function (7Ah command) to check ECC correction status. ECC Status Register, SR[0]~SR[3] indicate the correction status, and SR[4]~SR[7] indicate the sector information. Table 6-5 and Table 6-6 show the meaning of each combination result. Table 6-3: Status Output Status Bit Macronix MX30LF1GE8AB SR[0] SR[1] SR[2] SR[3] SR[4] SR[5] SR[6] SR[7] Chip PGM/ERS/READ status: Pass/Fail Cache Program status: Pass/Fail Reserved Internal ECC Status*1 Internal ECC Status*1 PGM/ERS/Read internal controller: Ready/Busy PGM/ERS/Read status: Ready/Busy Write Protect Toshiba TC58BVG0S3H Chip PGM/ERS/READ status: Pass/Fail Reserved Reserved Rewrite Recommended Reserved PGM/ERS/Read status: Ready/Busy PGM/ERS/Read status: Ready/Busy Write Protect Note: For Macronix internal ECC status, refer to Table 6-4. Table 6-4: Macronix Internal ECC Bits Status SR bits and value SR[4] SR[3] SR[0] 0 0 1 0 0 0 1 0 0 0 1 0 1 1 0 P/N: AN0369 Status of ECC correction Uncorrectable 0 or 1-bit error corrected 2-bit error corrected 3-bit error corrected 4-bit error corrected 5 Ver.1, Jan.28, 2015 APPLICATION NOTE Comparing Toshiba® TC58BVG0S3H with Macronix MX30LF1GE8AB Table 6-5: Toshiba Internal ECC Bits Status ECC_SR bits and value SR[3] SR[2] SR[1] SR[0] 0 0 0 0 0 0 0 1 0 0 1 0 0 0 1 1 0 1 0 0 0 1 0 1 0 1 1 0 0 1 1 1 1 0 0 0 1 1 1 1 Status of ECC correction No Error 1-bit error and correctable 2-bit error and correctable 3-bit error and correctable 4-bit error and correctable 5-bit error and correctable 6-bit error and correctable 7-bit error and correctable 8-bit error and correctable Uncorrectable Table 6-6: Toshiba Sector information Bits Status for ECC ECC_SR bits and value Sector Information SR[7] SR[6] SR[5] SR[4] 0 0 0 0 1st Sector (Main and Spare area) 0 0 0 1 2nd Sector (Main and Spare area) 0 0 1 0 3rd Sector (Main and Spare area) 0 0 1 1 4th Sector (Main and Spare area) Other Reserved P/N: AN0369 6 Ver.1, Jan.28, 2015 APPLICATION NOTE Comparing Toshiba® TC58BVG0S3H with Macronix MX30LF1GE8AB 7. Read ID Command The ID of the Macronix MX30LF1GE8AB begins with a one-byte Manufacturer Code followed by a four-byte Device ID. While the same command set is used to read the Manufacturer ID, Device ID, and flash structure, the IDs are different, allowing software to identify the device manufacturer and device type (Table 7-1). Table 7-1: Manufacturer and Device IDs ID code Value 1st Byte 2nd Byte IO1, IO0 IO3, IO2 3rd Byte IO5, IO4 IO6 4th Byte 5th Byte IO7 IO1, IO0 IO2 IO7, IO3 IO5, IO4 IO6 IO1, IO0 IO3, IO2 IO6~IO4 IO7 P/N: AN0369 Macronix MX30LF1GE8AB Toshiba TC58BVG0S3H C2h/F1h/80h/95h/82h 98h/F1h/80h/15h/F2h Manufacturer Code Device Identifier Number of Die per Chip Enable Cell Structure Number of Simultaneously Programmed Pages Interleaved Programming Between Multiple Chips Cache Program Page Size (excluding Spare Area) Spare Area Size Sequential Read Cycle Time (tRC) Block Size (excluding Spare Area) Organization ECC Level Requirement Number of Planes per CE Plane Size Internal ECC Enabled/Disabled Manufacturer Code Device Identifier Number of Die per Chip Enable Cell Structure 7 Reserved Reserved Reserved Page Size (excluding Spare Area) Reserved Reserved Block Size (exclude Spare Area) Organization Reserved Number of Planes per CE Reserved Internal ECC Enabled/Disabled Ver.1, Jan.28, 2015 APPLICATION NOTE Comparing Toshiba® TC58BVG0S3H with Macronix MX30LF1GE8AB 8. Internal ECC Function 8-1 Enabling Internal ECC Macronix and Toshiba provide Internal ECC functions which generate ECC code internally when programming data into the memory array. The Internal ECC function is always enabled in both devices. 8-2 Internal ECC Protected Areas Macronix provides 4-bit ECC correction and Toshiba® provides 8-bit ECC correction. Table 8-1 shows the areas protected by the Internal ECC function. Each spare area is associated with its corresponding main array area. For example, Spare Area 0 is associated with Main Array 0 only. Both the Macronix and Toshiba® devices have a maximum NOP (Number of Partial-Page) programming limitation of 4, so the user needs to program the main array and corresponding spare area together during a single programming operation. Table 8-1: Internal ECC Protection Area Main Array (2KB) Device Main 0 MX30LF1GE8AB TC58BVG0S3H P/N: AN0369 Main 1 Main 2 Main 3 512B 512B 512B 512B 512B 512B 512B 512B 8 Spare Area (64B) Spare 0 Spare 1 Spare 2 Spare 3 16B 16B 16B 16B 16B 16B 16B 16B Ver.1, Jan.28, 2015 APPLICATION NOTE Comparing Toshiba® TC58BVG0S3H with Macronix MX30LF1GE8AB 9. Power-Up Timing Macronix and Toshiba power-up sequences are similar, but the timing is slightly different. Although both devices use 2.7V (VCC min.) as the start point, measurement items are different. Check the system timing to determine if adjustments are needed. Table 9-1: Power-Up Timing H/W Timing Characteristic Vcc (min.) to WE# low Vcc (min.) to R/B# high Vcc (min.) to R/B# low Macronix MX30LF1GE8AB 1ms (max.)*1 N/A 10us (max.) Toshiba TC58BVG0S3H N/A 1ms (max.) 100us (max.) Note: Macronix requires an initialization delay during power on. Vcc(min.) VCC WE# R/B# Figure 9-1: Power-Up Timing 10. Summary The Macronix MX30LF1GE8AB and Toshiba TC58BVG0S3H NAND have similar features and pinouts. While basic Read, Program, and Erase commands are the same, more advanced features such as Internal ECC status bits differ slightly. Overall, device migration may require minimal software modifications. P/N: AN0369 9 Ver.1, Jan.28, 2015 APPLICATION NOTE Comparing Toshiba® TC58BVG0S3H with Macronix MX30LF1GE8AB 11. Reference Table 11-1 shows the datasheet versions used for comparison in this application note. For the most current, detailed Macronix specification, please refer to the Macronix website at http://www.macronix.com Table 11-1: Datasheet Version Datasheet Location Date Issue Revision MX30LF1GE8AB TC58BVG0S3H Website Website Sept. 2014 Aug. 2012 Rev. 0.03 Rev. 1.00 Note: Macronix data sheet is subject to change without notice. 12. Appendix Cross Reference Table 12-1 shows basic part number and package information for the Macronix MX30LF1GE8AB and Toshiba TC58BVG0S3H. Table 12-1: Part Number Cross Reference Density Macronix Part No. Toshiba Part No. 1Gb MX30LF1GE8AB-TI TC58BVG0S3HTAI0 Package 48-TSOP Dimension 12x20mm 13. Revision History Revision 1.0 P/N: AN0369 Description Initial Release 10 Date Jan. 28 , 2015 Ver.1, Jan.28, 2015 APPLICATION NOTE Comparing Toshiba® TC58BVG0S3H with Macronix MX30LF1GE8AB Except for customized products which have been expressly identified in the applicable agreement, Macronix's products are designed, developed, and/or manufactured for ordinary business, industrial, personal, and/or household applications only, and not for use in any applications which may, directly or indirectly, cause death, personal injury, or severe property damages. In the event Macronix products are used in contradicted to their target usage above, the buyer shall take any and all actions to ensure said Macronix's product qualified for its actual use in accordance with the applicable laws and regulations; and Macronix as well as it’s suppliers and/or distributors shall be released from any and all liability arisen therefrom. Copyright© Macronix International Co., Ltd. 2015. All rights reserved, including the trademarks and tradename thereof, such as Macronix, MXIC, MXIC Logo, MX Logo, Integrated Solutions Provider, NBit, Nbit, NBiit, Macronix NBit, eLiteFlash, HybridNVM, HybridFlash, XtraROM, Phines, KH Logo, BE-SONOS, KSMC, Kingtech, MXSMIO, Macronix vEE, Macronix MAP, Rich Au-dio, Rich Book, Rich TV, and FitCAM. The names and brands of third party referred thereto (if any) are for identification purposes only. For the contact and order information, please visit Macronix’s Web site at: http://www.macronix.com P/N: AN0369 11 Ver.1, Jan.28, 2015