Comparing Micron M29EW with Macronix MX29GL-E

APPLICATION NOTE
Comparing Micron M29EW with Macronix MX29GL_E
1. Introduction
Macronix offers MX29GL_E high performance parallel flash in densities from 32Mb to 512Mb.
MX29GL_E and Micron® M29EW devices have similar features, performance, and command codes,
but there are some differences as indicated in blue text below. This application note explains how to
accommodate those differences when migrating from Micron® M29EW devices to equivalent
Macronix MX29GL_E parallel flash products from densities of 32Mb to 64Mb.
The information in this document is based on datasheets listed in Section 11. Newer versions of the
datasheets may override the contents of this document.
2. Features
Both flash device families have similar features and functions as shown in Table 2-1.
The primary feature difference is the I/O voltage range.
Table 2-1: Feature Comparison
Type / Function
VCC Voltage Range
I/O Voltage Range
Bus Width
Sector Uniform
Size
Top/Bottom
Page Read Buffer Size
Write Buffer Size
WP# Pin Uniform
Function Top/Bottom
Software Protected Mode
OTP Security Region
Blank Check Command*5
Manufacture ID
Uniform
32Mb
Top/Bottom
Device ID
Uniform
64Mb
Top/Bottom
Package
Macronix MX29GL_E
2.7V ~ 3.6V
2.7V ~ 3.6V*1
x16 / x8
64KB
8KB, 64KB
8Words / 16Bytes
16Words / 32Bytes
Highest/Lowest address sector
Top/Bottom two address sector
Password (64bits)
Solid Protection*3
128Words / 256Bytes
C2h
227E/221D/2200
227E/221A/2200 (2201: Top)
227E/220C/2201
227E/2210/2200 (2201: Top)
56-TSOP (14x20mm)
64-LFBGA (11x13mm)
48-TSOP (12x20mm)
48-LFBGA (6x8mm)
Micron® M29EW
2.7V ~ 3.6V
1.65V ~ 3.6V*2
x16 / x8
64KB
8KB, 64KB
8Words / 16Bytes
256Words / 256Bytes*4
Highest/Lowest address sector
Top/Bottom two address sector
Password (64bits)
Non-volatile Protection*3
128Words / 256Bytes
Yes
89h
227E/221D/2200
227E/221A/2200 (2201: Top)
227E/220C/2201
227E/2210/2200 (2201: Top)
56-TSOP (14x20mm)
64-LFBGA (11x13mm)
48-TSOP (12x20mm)
48-LFBGA (6x8mm)
Note:
1. Macronix offers VI/O = Vcc = 2.7 ~ 3.6V
2. Micron® offers VI/O = 1.65 ~ Vcc, Vcc = 2.7 ~ 3.6V
3. Solid Protection is same function as Non-volatile Protection, which is just different naming
P/N: AN0197
Ver:1, Oct. 30, 2012
APPLICATION NOTE
Comparing Micron M29EW with Macronix MX29GL_E
4. Due to device limitation, Micron device in x8 mode could only offer 256Byte buffer length in write buffer
5. Micron® provides Blank Check command to determine memory cell that are programmed or over-erase.
3. Performance
Table 3-1 shows MX29GL_E series and M29EW series Read/Write performance.
Table 3-1: Read Function Performance (Random Read and Page Read)
Read function
Macronix MX29GL_E
Micron® M29EW
Random Read Access time
60ns (BGA package)
70ns
(Taa/Tce or tAVQV/tELQV)
70ns (TSOP package)
Page Access time
25ns
25ns
(Tpa or tAVQV1)
Table 3-2: Write Function Performance (Program and Erase)
Write Function
Macronix MX29GL_E
*1
16 word
100us
Write Buffer Program
*1
time
256 word
N/A
Word Program time
11us
Sector Erase time
0.6s
32Mb
32s
Chip Erase time
64Mb
60s
Write/Erase Cycles (Endurance)
100,000
Micron® M29EW
70us
284us
15us
0.5s
N/A
N/A
100,000
Note:
1. Write Buffer length: Maximum length is different; aligning length to 16 words to provide system compatibility.
2. All Values provided in Table 3-2 are “typical” values.
3-1. Write Buffer length alignment
The Write Buffer sizes are different between the two device families and software modification is
necessary to adjust for the difference. The Macronix MX29GL320E and MX29GL640E Write Buffer
size is 32-Words. Micron’s Write Buffer size is 256-Bytes in x8 mode and 256-Words in x16 mode.
There are two suggested methods for adapting to the difference in Write Buffer sizes:
(i) Use a maximum Write Buffer length of 16-Words for both devices.
(ii) Read the maximum Write Buffer length from the CFI table and adjust the algorithm to use this
length. The Write Buffer length parameter is located at offset address 2Ah (word mode) of the CFI
table.
Regardless which method is adopted, the Write Buffer addresses need to fall within a 16-Word page
boundary when using the Macronix device.
P/N: AN0197
Ver:1, Oct. 30, 2012
APPLICATION NOTE
Comparing Micron M29EW with Macronix MX29GL_E
4. DC Characteristics Comparison
There are minor differences in DC characteristics.
Table 4-1: Read / Write Current
DC Characteristic
Condition
typ
Read Current
max
typ
Page Read Current
max
Deep Power Down
typ
typ
Standby Current
max
typ
Write Current
max
Macronix MX29GL_E
30mA @ 5MHz
50mA @ 5MHz
2mA @ 10MHz
10mA @ 10MHz
10uA
30uA
100uA
26mA
30mA
Micron® M29EW
20mA @ 5MHz
25mA @ 5MHz
12mA @ 13MHz
16mA @ 13MHz
N/A
35uA
120uA
35mA
50mA
Generally, both have similar input and output voltage ranges, but there are some differences, which
are highlighted in blue in Table 4-2 below.
The major difference is Very High Voltage range (for accelerated programming) which may damage
the flash device if the maximum level is exceeded.
Table 4-2: Input / Output Voltage
DC Characteristic
Condition
Very High Voltage
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
min
max
min
max
max
min
Table 4-3: Absolute Maximum Ratings
Parameter
Condition
Storage Temperature
no Bias
Storage Temperature
with Bias
min
VCC Voltage Range
max
min
Input/Output Voltage
Range
max
Program Voltage
max
P/N: AN0197
Macronix MX29GL_E
Micron® M29EW
9.5V ~ 10.5V
-0.1V
0.3VI/O
0.7VI/O
VI/O+0.3V
0.45V
0.85VI/O
11.5V ~ 12.5V
-0.5V
0.8V
2.0V
VI/O+0.5V
0.2V
VI/O – 0.2V
Macronix MX29GL_E
-65C to +150C
-65C to +125C
-0.5V
4V
-0.5V
VCC+0.5V
10.5V
Micron® M29EW
-65C to +125C
-40C to +85C
-2V
5.6V
-0.6V
VCC+0.6V
14.5V
Ver:1, Oct. 30, 2012
APPLICATION NOTE
Comparing Micron M29EW with Macronix MX29GL_E
5. Hardware Consideration
The Macronix device has a similar footprint with the Micron® device. The TSOP56 and LFBGA64 in
uniform sector, and TSOP48 and LFBGA48 in Top/Bottom boot sector configurations are shown
below.
56-TSOP (14x20mm)
NC
NC
A15
A14
A13
A12
A11
A10
A9
A8
A19
A20
WE#
RESET#
A21
WP#/ACC
RY/BY#
A18
A17
A7
A6
A5
A4
A3
A2
A1
NC
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
NC
RFU
NC
RFU
A16
A15
BYTE#
A14
GND
A13
Q15/A-1
A12
Q7
A11
Q14
A10
Q6
A9
Q13
A8
Q5
A19
Q12
A20
Q4
WE#
VCC
RESET#
Q11
A21
Q3
WP#/Vpp
Q10
RY/BY#
Q2
A18
Q9
A17
Q1
A7
Q8
A6
Q0
A5
OE#
A4
GND
A3
CE#
A2
A0
A1
NC
RFU
VI/O
RFU
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
MX29GL_E
Macronix GND (Pin 52, Pin 33) = Micron VSS ( Pin 52, Pin 33)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27 Reserve for Future Use
28 Reserve for Future Use
M29EW
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
Reserve for Future Use 30
29
RFU
RFU
A16
BYTE#
VSS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
VSS
CE#
A0
RFU
VCCQ
Macronix VI/O pin ( Pin 29) = Micron VCCQ (Pin 29)
64-LFBGA (11x13mm)
MX29GL_E
M29EW
8
NC
NC
NC
VIO
GND
NC
NC
NC
8
RFU
RFU
RFU
VCC
Q
VSS
RFU
RFU
RFU
7
A13
A12
A14
A15
A16
BYTE
#
Q15/A
-1
GND
7
A13
A12
A14
A15
A16
BYTE
#
Q15/A
-1
VSS
6
A9
A8
A10
A11
Q7
Q14
Q13
Q6
6
A9
A8
A10
A11
D7
D14
D13
D6
5
WE#
RESET#
A21
A19
Q5
Q12
VCC
Q4
5
WE#
RESET#
A21
A19
D5
D12
VCC
D4
4
RY/
BY#
WP#/
ACC
A18
A20
Q2
Q10
Q11
Q3
4
RY/
BY#
WP#/
Vpp
A18
A20
D2
D10
D11
D3
3
A7
A17
A6
A5
Q0
Q8
Q9
Q1
3
A7
A17
A6
A5
D0
D8
D9
D1
2
A3
A4
A2
A1
A0
CE#
OE#
GND
2
A3
A4
A2
A1
A0
CE#
OE#
VSS
1
NC
NC
NC
NC
NC
VIO
NC
NC
1
RFU
RFU
RFU
RFU
RFU
VCC
Q
RFU
RFU
A
B
C
D
E
F
G
H
A
B
C
D
E
F
G
H
P/N: AN0197
Ver:1, Oct. 30, 2012
APPLICATION NOTE
Comparing Micron M29EW with Macronix MX29GL_E
48-TSOP (12x20mm)
A15
A14
A13
A12
A11
A10
A9
A8
A19
A20
WE#
RESET#
A21
WP#/ACC
RY/BY#
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13 NC on MX29GL320E
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
43
42
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
MX29GL_E
A16
A15
BYTE#
A14
GND
A13
Q15/A-1
A12
Q7
A11
Q14
A10
Q6
A9
Q13
A8
Q5
A19
Q12
A20
Q4
WE#
VCC
RESET#
Q11
A21
Q3
WP#/Vpp
Q10
RY/BY#
Q2
A18
Q9
A17
Q1
A7
Q8
A6
Q0
A5
OE#
A4
GND
A3
CE#
A2
A0
A1
1
2
3
4
5
6
7
8
9
10
11
12
13 RFU on JR28F032M29EW
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
43
42
42
41
40
39
38
37
36
35
34
33
32
31
30
29
27
28
26
25
M29EW
A16
BYTE#
VSS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
VSS
CE#
A0
Macronix GND (Pin 46, Pin 27) = Micron VSS ( Pin 46, Pin 27)
48-LFBGA (6x8mm)
MX29GL_E
M29EW
6
A13
A12
A14
A15
A16
BYTE
#
Q15/A
-1
GND
7
A13
A12
A14
A15
A16
BYTE
#
Q15/A
-1
VSS
5
A9
A8
A10
A11
Q7
Q14
Q13
Q6
6
A9
A8
A10
A11
D7
D14
D13
D6
4
WE#
RESET#
A21
A19
Q5
Q12
VCC
Q4
5
WE#
RESET#
A21
A19
D5
D12
VCC
D4
3
RY/
BY#
WP#/
ACC
A18
A20
Q2
Q10
Q11
Q3
4
RY/
BY#
WP#/
Vpp
A18
A20
D2
D10
D11
D3
2
A7
A17
A6
A5
Q0
Q8
Q9
Q1
3
A7
A17
A6
A5
D0
D8
D9
D1
1
A3
A4
A2
A1
A0
CE#
OE#
GND
2
A3
A4
A2
A1
A0
CE#
OE#
VSS
D
E
F
G
H
E
F
G
H
A
B
C
C4: NC on MX29GL320E
P/N: AN0197
A
B
C
D
C4: RFU on PZ28F064M29EW
Ver:1, Oct. 30, 2012
APPLICATION NOTE
Comparing Micron M29EW with Macronix MX29GL_E
6. Software Considerations
Basic command sets and write status checking methods are similar between both flash families. The
algorithm descriptions may be slightly different, but the concepts are the same.
6-1 Basic Commands
Basic Command Table of MX29GL_E and M29EW
555h
Write to
Buffer
555h
Chip
Erase
555h
Sector
Erase
555h
Program/Erase
Suspend
XXX
Program/Erase
Resume
XXX
AAh
AAh
AAh
AAh
B0h
30h
Addr
2AAh
2AAh
2AAh
2AAh
Data
55h
55h
55h
55h
Addr
555h
SA*1
555h
555h
Data
A0h
25h
80h
80h
Addr
Addr
SA
555h
555h
Data
Data
N-1*2
AAh
AAh
Addr
WA*3
2AAh
2AAh
Data
WD*4
55h
55h
Addr
WBL*5
555h
SA
Data
WD
10h
30h
Command
1st
Bus
Cycle
2nd
Bus
Cycle
3rd
Bus
Cycle
4th
Bus
Cycle
5th
Bus
Cycle
6th
Bus
Cycle
Read
Reset
Program
Addr
Addr
XXX
Data
Data
F0h
Note:
1. SA: Sector Address
2. N-1: Word Count
3. WA: Write Address
4. WD: Write Data
5. WBL: Write Buffer Location
6.2 Unique Commands
There are several functions which can be used on the Micron device, which are not available on the
Macronix flash.
6.2a) Micron does offer an additional Blank Check Setup (76h) and Blank Check Read (29h)
command (to determine if a specific block is completely erased) which is not supported by
Macronix flash.
6.2b) Micron offers Double, Quadruple, and Octuple parallel page/byte buffer programming
commands (50h, 56h, 8Bh) which are not supported by Macronix.
P/N: AN0197
Ver:1, Oct. 30, 2012
APPLICATION NOTE
Comparing Micron M29EW with Macronix MX29GL_E
6.3 Write Status Checking Method
When a flash program/erase operation is in progress, either the “Polling Method” or “Toggle Bit
Method” may be used to monitor the operation. Both are standard algorithms in parallel flash and can
be used for both device families.
Polling Method:
Polling method checks Q7 (data complement bit) and Q5 (time out bit) values during the operation.
After the operation has finished, Q7 will output true Data.
Toggle Bit Method:
The toggle bit method checks the Q6 (toggle bit) value during writes. When the write operation ends,
Q6 will stop toggling.
Start
Start
Read Q7~Q0 at valid
Read Q7~Q0 Twice
No
No
Q6 Toggle ?
Q7 = Data# ?
Yes
No
No
Q5 = 1 ?
Q5 = 1 ?
Yes
Yes
Read Q7~Q0 at valid
Q7 = Data# ?
Read Q7~Q0 Twice
No
P/N: AN0197
No
Q6 Toggle?
Yes
Yes
Fail
Yes
Pass
PGM/ERS fail
Write Reset CMD
PGM/ERS Complete
Ver:1, Oct. 30, 2012
APPLICATION NOTE
Comparing Micron M29EW with Macronix MX29GL_E
7. Manufacturer ID & Device ID Command
Manufacturer IDs are different and permits software to identify the device manufacturer, but Device
IDs are the same. The same command set is used read the different Manufacturer IDs.
Table 7-1: Manufacturer and Device ID Command Definitions
Manufacturer ID
Device ID
Flash Vender
MX29GL_E
M29EW
MX29GL_E
st
1 Bus Cycle
(command)
2nd Bus Cycle
(command)
3rd Bus Cycle
(command)
4th Bus Cycle
(ID output)
5th Bus Cycle
(ID output)
6th Bus Cycle
(ID output)
Address
Data
Address
Data
Address
Data
Address
Data
Address
Data
Address
Data
555h
AAh
2AAh
55h
555h
90h
X00h
C2h
555h
AAh
2AAh
55h
555h
90h
X00h
89h
555h
AAh
2AAh
55h
555h
90h
X01h
227Eh
X0Eh
221D/221A(32Mb)
220C/2210(64Mb)
X0Fh
2201h/2200h
M29EW
555h
AAh
2AAh
55h
555h
90h
X01h
227Eh
X0Eh
221D/221A(32Mb)
220C/2210(64Mb)
X0Fh
2201h/2200h
Note.
1. Device ID can be read out after Manufacturer ID with proper address and does not need another command sequence.
2. Use Reset command (F0h) to return to normal read mode.
P/N: AN0197
Ver:1, Oct. 30, 2012
APPLICATION NOTE
Comparing Micron M29EW with Macronix MX29GL_E
8. Power-Up Timing
Macronix and Micron® power on sequences are similar, but the timing is slightly different. Check
system timing to determine if a timing adjustment is needed.
Table 8-1: Power-Up Timing
Parameter
Symbol
Condition
VCC Rise Time
Tvr
VCC Setup Time
VIO Setup Time
Tvcs/tVCHPH+tPHEL
Tvios/tVCQHPH+tPHEL
min
max
min
min
Vcc
Macronix
MX29GL128F
20us/V
500ms/V
500us
N/A
Micron
28F128M29EW
N/A
N/A
60us
50us
Tvcs/tVCHPH +
Tvr
VI/O
Tvios/tVCQHPH +
Tvr
CE
P/N: AN0197
Ver:1, Oct. 30, 2012
APPLICATION NOTE
Comparing Micron M29EW with Macronix MX29GL_E
9. H/W Reset# Pin Timing
Macronix and Micron both offer a hardware reset function. The operation is same but the timing is
slightly different. System timing may need to be adjusted for the auto algorithm and non-auto
algorithm (Figure 9-1).
Table 9-1: Reset# Timing
H/W Timing Characteristic
Macronix MX29GL_E
Micron® M29EW
200ns (min)
50ns (min)
10us (min)
100ns (min)
20us (max)
25us (max)
500ns (min)
100ns (min)
500ns (max)
N/A
Trh or tPHEL/tPHGL
(Reset# high to Read)
During auto
Trp1 or tPLPH
*
algorithm mode
(Reset# pulse width)
Tready1 or tPLRH
(Reset# low to read or write)
During non-auto
Trp2 or tPLPH
*
algorithm mode
(Reset# pulse width)
Tready2
(Reset# low to read or write)
* Macronix defines different reset timing between auto and non-auto algorithm; Micron defines same value in both.
Trb
CE#,
CE#, OE#
||
Trh/tPHEL/tPHG
WE#
||
RY/BY#
Tr
RY/BY#
Tready1/tPLRH
||
||
Reset
Trp1/tPLPH
Reset
Tready2
Trp2/tPLPH
During auto algo
During non-auto algorithm
rithm mode
mode
* Macronix defines different reset timing between auto and non-auto algorithm; Micron defines same value in both.
P/N: AN0197
Ver:1, Oct. 30, 2012
APPLICATION NOTE
Comparing Micron M29EW with Macronix MX29GL_E
10. Summary
Macronix MX29GL_E and Micron M29EW Parallel Flash occupy the same PCB footprint and have
similar commands, functions, and features. There are I/O supply voltage level differences,
Power-Up/Reset timing differences, and accelerated programming voltage level differences which
may need to be accommodated. The software may need to be modified to use a maximum Write
Buffer size of 16-Words. In addition, the software algorithms need to ensure that Write Buffer
addresses fall within a 16-Word page boundary.
11. Data Sheet Version
Table 11-1 shows the datasheet versions used for comparison in this application note. For the most
current, detailed Macronix specification, please refer to the Macronix Website at
http://www.macronix.com
Table 11-1: Datasheet Version
Data sheet
Location
Date Issue
Revision
MX29GL320E
MX29GL640E
M29EW
Website
Website
Website
Dec. 29, 2011
Dec. 27, 2011
Apr, 2011
Rev. 1.2
Rev. 1.4
Rev. 05
12. Appendix
Cross Reference Table 12-1 shows basic part number and package information for the Macronix
MX29GL_F and Micron products.
Table 12-1: Part Number Cross Reference
Density
32Mb
64Mb
Macronix Part*1
MX29GL320ETTI-70G
MX29GL320EBTI-70G
MX29GL320ETXEI-70G
MX29GL320EBXEI-70G
MX29GL640ETTI-70G
MX29GL640EBTI-70G
MX29GL640ETXEI-70G
MX29GL640EBXEI-70G
MX29GL640EHT2I-70G
MX29GL640ELT2I-70G
MX29GL640EHXFI-70G
MX29GL640ELXFI-70G
Micron® Part
JR28F032M29EWT
JR28F032M29EWB
PZ28F032M29EWT
PZ28F032M29EWB
JR28F064M29EWT
JR28F064M29EWB
PZ28F064M29EWT
PZ28F064M29EWB
JS28F064M29EWH
JS28F064M29EWL
PC28F064M29EWH
PC28F064M29EWL
Package
Dimension
48-TSOP
12x20mm
48-LFBGA
6x8x13mm
0.4mm ball
48-TSOP
12x20mm
48-LFBGA
6x8x13mm
0.4mm ball
56-TSOP
14x20mm
64-LFBGA
11x13x14mm
0.6mm ball
Note:
1. Macronix only offers VI/O = Vcc = 2.7 ~ 3.6V option
P/N: AN0197
Ver:1, Oct. 30, 2012
APPLICATION NOTE
Comparing Micron M29EW with Macronix MX29GL_E
Except for customized products which have been expressly identified in the applicable agreement,
Macronix's products are designed, developed, and/or manufactured for ordinary business, industrial,
personal, and/or household applications only, and not for use in any applications which may, directly or
indirectly, cause death, personal injury, or severe property damages. In the event Macronix products
are used in contradicted to their target usage above, the buyer shall take any and all actions to ensure
said Macronix's product qualified for its actual use in accordance with the applicable laws and
regulations; and Macronix as well as it’s suppliers and/or distributors shall be released from any and
all liability arisen therefrom.
Copyright© Macronix International Co., Ltd. 2011~2012. All rights reserved, including the trademarks
and tradename thereof, such as Macronix, MXIC, MXIC Logo, MX Logo, Integrated Solutions Provider,
NBit, Nbit, NBiit, Macronix NBit, eLiteFlash, HybridNVM, HybridFlash, XtraROM, Phines, KH Logo,
BE-SONOS, KSMC, Kingtech, MXSMIO, Macronix vEE, Macronix MAP, Rich Au-dio, Rich Book, Rich
TV, and FitCAM. The names and brands of third party referred thereto (if any) are for identification
purposes only.
For the contact and order information, please visit Macronix’s Web site at: http://www.macronix.com
P/N: AN0197
Ver:1, Oct. 30, 2012
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