NTTFS4939N D

NTTFS4939N
Power MOSFET
30 V, 52 A, Single N−Channel, m8FL
Features
•
•
•
•
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V(BR)DSS
RDS(on) MAX
Applications
•
•
•
•
5.5 mW @ 10 V
30 V
Low−Side DC−DC Converters
Power Load Switch
Notebook Battery Management
Motor Control
N−Channel MOSFET
Parameter
D (5−8)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±20
V
ID
14.3
A
Continuous Drain
Current RqJA (Note 1)
TA = 25°C
Power Dissipation RqJA
(Note 1)
TA = 25°C
PD
2.21
W
Continuous Drain
Current RqJA ≤ 10 s
(Note 1)
TA = 25°C
ID
20.3
A
Continuous Drain
Current RqJA (Note 2)
TA = 85°C
S (1,2,3)
MARKING DIAGRAM
14.7
TA = 25°C
PD
4.48
W
TA = 25°C
ID
8.9
A
TA = 85°C
6.4
Power Dissipation
RqJA (Note 2)
TA = 25°C
PD
0.85
W
Continuous Drain
Current RqJC (Note 1)
TC = 25°C
ID
52
A
Power Dissipation
RqJC (Note 1)
TC = 25°C
PD
29.8
W
TA = 25°C, tp = 10 ms
IDM
170
A
TJ,
Tstg
−55 to
+150
°C
IS
35
A
Drain to Source dV/dt
dV/dt
6.0
V/ns
Single Pulse Drain−to−Source Avalanche Energy
(TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL = 31 Apk, L = 0.1 mH, RG = 25 W)
EAS
48
mJ
Pulsed Drain Current
TC = 85°C
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
G (4)
10.3
TA = 85°C
Steady
State
52 A
8.0 mW @ 4.5 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Power Dissipation
RqJA ≤ 10 s (Note 1)
ID MAX
38
TL
1
S
S
S
G
1
WDFN8
(m8FL)
CASE 511AB
4939
A
Y
WW
G
4939
AYWWG
G
D
D
D
D
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
260
°C
ORDERING INFORMATION
Device
Package
Shipping†
NTTFS4939NTAG
WDFN8 1500/Tape & Reel
(Pb−Free)
NTTFS4939NTWG
WDFN8 5000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2012
April, 2012 − Rev. 3
1
Publication Order Number:
NTTFS4939N/D
NTTFS4939N
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Unit
Junction−to−Case (Drain)
Parameter
RqJC
4.2
°C/W
Junction−to−Ambient – Steady State (Note 3)
RqJA
56.5
Junction−to−Ambient – Steady State (Note 4)
RqJA
146.5
Junction−to−Ambient – (t ≤ 10 s) (Note 3)
RqJA
28
3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size (40 mm2, 1 oz. Cu).
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
V
15
VGS = 0 V,
VDS = 24 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±100
nA
2.2
V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
4.0
VGS = 10 V
VGS = 4.5 V
Forward Transconductance
gFS
1.2
ID = 20 A
4.1
ID = 10 A
4.1
ID = 20 A
6.0
ID = 10 A
5.9
VDS = 1.5 V, ID = 15 A
mV/°C
5.5
mW
8.0
35
S
1979
pF
CHARGES AND CAPACITANCES
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
20.2
Total Gate Charge
QG(TOT)
12.4
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Total Gate Charge
QG(TOT)
VGS = 0 V, f = 1.0 MHz, VDS = 15 V
VGS = 4.5 V, VDS = 15 V, ID = 20 A
711
nC
3.2
6.0
1.8
VGS = 10 V, VDS = 15 V, ID = 20 A
28
nC
12.2
ns
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(on)
tr
td(off)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
20.6
20.8
3.9
5. Pulse Test: pulse width = 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NTTFS4939N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(on)
tr
td(off)
ns
8.7
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
19.5
25.3
3.2
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.84
TJ = 125°C
0.71
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 20 A
1.2
ns
35.5
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 20 A
V
19
16.5
QRR
28
nC
Source Inductance
LS
0.38
nH
Drain Inductance
LD
Gate Inductance
LG
Gate Resistance
RG
PACKAGE PARASITIC VALUES
TA = 25°C
0.054
1.3
1.1
5. Pulse Test: pulse width = 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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3
2.0
W
NTTFS4939N
TYPICAL CHARACTERISTICS
100
10 V
90
70
3.6 V
60
3.4 V
50
3.2 V
40
3.0 V
30
20
0
1
2
2.6 V
4
3
5
0.040
0.030
0.020
0.010
3
4
5
6
7
8
9
VGS, GATE−TO−SOURCE VOLTAGE (V)
10
4.0
0.010
TJ = 25°C
0.008
VGS = 4.5 V
0.006
0.004
VGS = 10 V
0.002
0.000
10
20
30 40
50
60
70
80 90 100 110 120 130
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. VGS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.0
10,000
ID = 20 A
VGS = 10 V
1.6
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
3.5
Figure 2. Transfer Characteristics
0.050
1.8
3.0
Figure 1. On−Region Characteristics
ID = 20 A
TJ = 25°C
2
TJ = −55°C
2.5
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.060
0.000
75
70 VDS ≥ 10 V
65
60
55
50
45
40
35
30
TJ = 25°C
25
20
15
10
TJ = 125°C
5
0
1.0
1.5
2.0
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
2.8 V
2.4 V
10
0
ID, DRAIN CURRENT (A)
4.0 V
80
ID, DRAIN CURRENT (A)
TJ = 25°C
4.5 V
VGS = 0 V
TJ = 150°C
1000
1.4
1.2
1.0
0.8
TJ = 125°C
100
TJ = 85°C
0.6
0.4
−50
−25
0
25
50
75
100
125
150
10
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
30
NTTFS4939N
TYPICAL CHARACTERISTICS
C, CAPACITANCE (pF)
2200
2000
VGS, GATE−TO−SOURCE VOLTAGE (V)
2400
Ciss
1800
1600
1400
1200
1000
800
VGS = 0 V
TJ = 25°C
Coss
600
400
200
0
Crss
0
5
10
15
20
25
30
TJ = 25°C
VDD = 15 V
VGS = 10 V
ID = 20 A
Qgd
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
30
IS, SOURCE CURRENT (A)
VGS = 0 V
td(off)
100
t, TIME (ns)
Qgs
Qg, TOTAL GATE CHARGE (nC)
VDD = 15 V
ID = 15 A
VGS = 10 V
tf
tr
td(on)
10
1
10
100
10
5
TJ = 25°C
0.5
0.6
0.7
0.8
0.9
1.0
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100 ms
1 ms
10 ms
VGS = 20 V
Single Pulse
TC = 25°C
dc
RDS(on) Limit
Thermal Limit
Package Limit
0.1
1
10
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
10 ms
0.01
0.01
TJ = 125°C
15
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
10
0.1
20
RG, GATE RESISTANCE (W)
100
1
25
0
0.4
1000
ID, DRAIN CURRENT (A)
QT
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1000
1
13
12
11
10
9
8
7
6
5
4
3
2
1
0
0
100
50
ID = 31 A
40
30
20
10
0
25
50
75
100
125
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
150
NTTFS4939N
TYPICAL CHARACTERISTICS
100
Duty Cycle = 50%
R(t) (°C/W)
10
1
20%
10%
5%
2%
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.1
0.01
PULSE TIME (sec)
Figure 13. Thermal Response
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6
1
10
100
1000
NTTFS4939N
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
ISSUE C
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
0.20 C
D
A
D1
B
2X
0.20 C
8 7 6 5
4X
E1 E
q
c
1 2 3 4
A1
TOP VIEW
0.10 C
A
e
SIDE VIEW
0.10
8X b
C A B
0.05
C
4X
L
C
6X
0.10 C
DETAIL A
SEATING
PLANE
DETAIL A
8X
e/2
1
0.42
4
INCHES
NOM
0.030
−−−
0.012
0.008
0.130 BSC
0.116
0.120
0.078
0.083
0.130 BSC
0.116
0.120
0.058
0.063
0.009
0.012
0.026 BSC
0.012
0.016
0.026
0.032
0.012
0.017
0.002
0.005
0.055
0.059
0_
−−−
MIN
0.028
0.000
0.009
0.006
MAX
0.031
0.002
0.016
0.010
0.124
0.088
0.124
0.068
0.016
0.020
0.037
0.022
0.008
0.063
12 _
0.65
PITCH
PACKAGE
OUTLINE
4X
0.66
M
E3
8
G
MILLIMETERS
MIN
NOM
MAX
0.70
0.75
0.80
0.00
−−−
0.05
0.23
0.30
0.40
0.15
0.20
0.25
3.30 BSC
2.95
3.05
3.15
1.98
2.11
2.24
3.30 BSC
2.95
3.05
3.15
1.47
1.60
1.73
0.23
0.30
0.40
0.65 BSC
0.30
0.41
0.51
0.65
0.80
0.95
0.30
0.43
0.56
0.06
0.13
0.20
1.40
1.50
1.60
0_
−−−
12 _
SOLDERING FOOTPRINT*
K
E2
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
E3
e
G
K
L
L1
M
q
5
D2
BOTTOM VIEW
3.60
L1
0.75
2.30
0.57
0.47
2.37
3.46
DIMENSION: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NTTFS4939N/D