MBRA340T3 D

MBRA340T3G,
NRVBA340T3G
Surface Mount
Schottky Power Rectifier
SMA Power Surface Mount Package
Employing the Schottky Barrier principle in a large area
metal−to−silicon power diode. State of the art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity diodes in surface mount applications
where compact size and weight are critical to the system.
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SCHOTTKY BARRIER
RECTIFIER
3.0 AMPERES
40 VOLTS
Features
•
•
•
•
•
•
•
Small Compact Surface Mountable Package with J−Bent Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Very Low Forward Voltage Drop
Guardring for Stress Protection
NRVBA Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant*
SMA
CASE 403D
STYLE 1
1
Cathode
MARKING DIAGRAM
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 70 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
•
•
•
•
2
Anode
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Polarity: Cathode Lead Indicated by Polarity Band
ESD Ratings:
♦ Machine Model = C
♦ Human Body Model = 3B
Device Meets MSL 1 Requirements
A34
AYWWG
A34
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Package
Shipping†
MBRA340T3G
SMA
(Pb−Free)
5,000 /
Tape & Reel **
NRVBA340T3G
SMA
(Pb−Free)
5,000 /
Tape & Reel **
Device
** 12 mm Tape, 13” Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 6
1
Publication Order Number:
MBRA340T3/D
MBRA340T3G, NRVBA340T3G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VRRM
VRWM
VR
40
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated VR, TL = 100°C)
IO
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
Storage/Operating Case Temperature
A
3.0
A
100
Tstg, TC
−55 to +150
°C
TJ
−55 to +150
°C
Operating Junction Temperature (Note 1)
Voltage Rate of Change
(Rated VR, TJ = 25°C)
dv/dt
V/ms
10,000
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
RθJL
RθJA
15
81
°C/W
Thermal Resistance − Junction−to−Lead (Note 2)
Thermal Resistance − Junction−to−Ambient (Note 2)
2. Mounted on 2″ Square PC Board with 1″ Square Total Pad Size, PC Board FR4.
ELECTRICAL CHARACTERISTICS
Symbol
Characteristic
Value
VF
Maximum Instantaneous Forward Voltage (Note 3)
TJ = 25°C
TJ = 100°C
0.450
0.390
TJ = 25°C
TJ = 100°C
0.3
15
(IF = 3.0 A)
Maximum Instantaneous Reverse Current
IR
Unit
(VR = 40 V)
Volts
mA
3. Pulse Test: Pulse Width ≤ 250 μs, Duty Cycle ≤ 2.0%.
TYPICAL CHARACTERISTICS
1
10
IF, INSTANTANEOUS FORWARD
CURRENT (AMPS)
IF, INSTANTANEOUS FORWARD
CURRENT (AMPS)
10
TJ = 125°C
0.1
0.10
TJ = 100°C
0.20
TJ = 25°C
0.30
0.40
TJ = −55°C
0.50
1
0.1
0.10
0.60
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
TJ = 125°C
TJ = 100°C
TJ = −55°C
TJ = 25°C
0.20
0.30
0.40
0.50
VF, MAXIMUM INSTANTANEOUS FORWARD
VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
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2
0.60
IR, REVERSE CURRENT (AMPS)
100E−3
IR, MAXIMUM REVERSE CURRENT (AMPS)
MBRA340T3G, NRVBA340T3G
100E−3
TJ = 125°C
10E−3
1E−3
TJ = 100°C
100E−6
10E−6
TJ = 25°C
1E−6
10E−3
TJ = 100°C
1E−3
TJ = −55°C
10E−9
1E−9
0
10
20
30
VR, REVERSE VOLTAGE (VOLTS)
TJ = −55°C
10E−6
40
1E−6
0
5
dc
freq = 20 kHz
4
3.5
3
2.5
2
1.5
SQUARE WAVE
Ipk/IO = p
Ipk/IO = 5
Ipk/IO = 10
1
0.5
0
25
50
75
100
125
150
TL, LEAD TEMPERATURE (°C)
1.6
SQUARE
WAVE
1.4
TJ, DERATED OPERATING TEMPERATURE (°C)
TJ = 25 °C
0
5
dc
1.2
1.0
0.8
Ipk/IO = p
0.6
Ipk/IO = 5
0.4
Ipk/IO = 10
0.2
0
Ipk/IO = 20
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 6. Forward Power Dissipation
C, CAPACITANCE (pF)
100
40
1.8
Figure 5. Current Derating
1000
10
20
30
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Maximum Reverse Current
PFO, AVERAGE POWER DISSIPATION (WATTS)
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 3. Typical Reverse Current
4.5
TJ = 25°C
100E−6
100E−9
100E−12
TJ = 125°C
10
15
20
25
30
VR, REVERSE VOLTAGE (VOLTS)
35
40
125
RqJA = 22 °C/W
115
105
RqJA = 43 °C/W
95
RqJA = 63 °C/W
85
RqJA = 81 °C/W
75
RqJA = 96 °C/W
65
55
0
Figure 7. Capacitance
5
35
10
15
20
25
30
VR, DC REVERSE VOLTAGE (VOLTS)
Figure 8. Typical Operating Temperature
Derating
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3
40
R(t), TRANSIENT THERMAL RESISTANCE (°C/W)
MBRA340T3G, NRVBA340T3G
100
D = 0.5
0.2
0.1
10
0.05
0.02
0.01
1
SINGLE PULSE
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
100
1000
t, TIME (S)
R(t), TRANSIENT THERMAL RESISTANCE (°C/W)
Figure 9. Thermal Response, Junction−to−Ambient (min pad)
100
D = 0.5
0.2
10
0.1
0.05
0.02
1
0.1
0.01
SINGLE PULSE
0.00001
0.0001
0.001
0.01
0.1
1
10
t, TIME (S)
Figure 10. Thermal Response, Junction to Ambient (1 inch pad)
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4
MBRA340T3G, NRVBA340T3G
PACKAGE DIMENSIONS
SMA
CASE 403D−02
ISSUE F
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 403D−01 OBSOLETE, NEW STANDARD IS 403D−02.
E
b
DIM
A
A1
b
c
D
E
HE
L
D
POLARITY INDICATOR
OPTIONAL AS NEEDED
(SEE STYLES)
MIN
1.97
0.05
1.27
0.15
2.29
4.06
4.83
0.76
MILLIMETERS
NOM
MAX
2.10
2.20
0.10
0.15
1.45
1.63
0.28
0.41
2.60
2.92
4.32
4.57
5.21
5.59
1.14
1.52
MIN
0.078
0.002
0.050
0.006
0.090
0.160
0.190
0.030
INCHES
NOM
0.083
0.004
0.057
0.011
0.103
0.170
0.205
0.045
MAX
0.087
0.006
0.064
0.016
0.115
0.180
0.220
0.060
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
A
L
c
A1
SOLDERING FOOTPRINT*
4.0
0.157
2.0
0.0787
2.0
0.0787
SCALE 8:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
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5
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For additional information, please contact your local
Sales Representative
MBRA340T3/D