MBRS540T3 D

MBRS540T3G,
NRVBS540T3G
Surface Mount
Schottky Power Rectifier
The MBRS540T3 employs the Schottky Barrier principle in a large
area metal−to−silicon power diode. State−of−the−art geometry
features epitaxial construction with oxide passivation and metal
overlay contact. Ideally suited for low voltage, high frequency
rectification, or as free wheeling and polarity protection diodes in
surface mount applications where compact size and weight are critical
to the system.
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SCHOTTKY BARRIER
RECTIFIER
5.0 AMPERES, 40 VOLTS
Features
•
•
•
•
•
•
•
Small Compact Surface Mountable Package with J−Bend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Excellent Ability to Withstand Reverse Avalanche Energy Transients
Guard−Ring for Stress Protection
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are PB−Free Packages*
SMC
CASE 403
MARKING DIAGRAM
AYWW
B540G
G
Mechanical Characteristics
• Case: Epoxy, Molded, Epoxy Meets UL 94 V−0 @ 0.125 in
• Weight: 217 mg (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
•
•
•
260°C Max. for 10 Seconds
Polarity: Notch in Plastic Body Indicates Cathode Lead
ESD Rating:
♦ Machine Model, C (> 400 V)
♦ Human Body Model, 3B (> 8000 V)
Device Meets MSL 1 Requirements
B540
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Package
Shipping†
MBRS540T3G
SMC
(Pb−Free)
2,500 /
Tape & Reel
NRVBS540T3G
SMC
(Pb−Free)
2,500 /
Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
July, 2013 − Rev. 8
1
Publication Order Number:
MBRS540T3/D
MBRS540T3G, NRVBS540T3G
MAXIMUM RATINGS
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Rating
VRRM
VRWM
VR
40
V
Average Rectified Forward Current
(At Rated VR, TC = 105°C)
IF(AV)
5
A
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 20 KHz, TC = 80°C)
IFRM
10
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
190
A
Storage Temperature Range
Tstg
−65 to +150
°C
TJ
−65 to +150
°C
dv/dt
10,000
V/ms
Operating Junction Temperature (Note 1)
Voltage Rate of Change (Rated VR)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance,
Junction−to−Lead (Note 2)
Thermal Resistance,
Junction−to−Ambient (Note 2)
Value
RqJL
12
RqJA
111
Symbol
Value
Unit
°C/W
2. Rating applies when surface mounted on the minimum pad size recommended.
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 3)
(iF = 5.0 A, TC= 25°C)
VF
Maximum Instantaneous Reverse Current (Note 3)
(Rated dc Voltage, TC = 25°C)
(Rated dc Voltage, TC = 100°C)
iR
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
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2
0.50
0.3
15
Unit
V
mA
MBRS540T3G, NRVBS540T3G
TYPICAL CHARACTERISTICS
10
iF, INSTANTANEOUS FORWARD
CURRENT (A)
iF, INSTANTANEOUS FORWARD
CURRENT (A)
10
TJ = 125°C
1
TJ = −40°C
TJ = 100°C TJ = 25°C
0.1
0.10
0.30
0.20
TJ = −55°C
0.40
0.50
TJ = 125°C
1
TJ = 100°C
TJ = 25°C
TJ = −40°C
0.60
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
TJ = 100°C
100E−6
10E−6
TJ = 25°C
1E−6
TJ = −55°C
10E−9
1E−9
100E−12
0
10
20
30
VR, REVERSE VOLTAGE (V)
40
TJ = 100°C
1E−3
TJ = 25°C
TJ = −55°C
10E−6
1E−6
0
10
20
30
VR, REVERSE VOLTAGE (V)
PFO, AVERAGE POWER DISSIPATION (W)
IO, AVERAGE FORWARD
CURRENT (A)
8
7
6
5
4
3
SQUARE WAVE
Ipk/IO = p
Ipk/IO = 5
2
1
0
25
50
75
100
125
40
Figure 4. Maximum Reverse Current
freq = 20 kHz
dc
0.70
10E−3
Figure 3. Typical Reverse Current
9
0.60
0.50
TJ = 125°C
100E−6
100E−9
0.40
100E−3
IR, MAXIMUM REVERSE CURRENT (A)
IR, REVERSE CURRENT (A)
1E−3
0.30
Figure 2. Maximum Forward Voltage
TJ = 125°C
10E−3
0.20
VF, MAXIMUM INSTANTANEOUS FORWARD
VOLTAGE (V)
Figure 1. Typical Forward Voltage
100E−3
TJ = −55°C
0.1
0.10
150
TL, LEAD TEMPERATURE (°C)
4.5
4
SQUARE
WAVE
3.5
dc
3
2.5
2
Ipk/IO = p
1.5
Ipk/IO = 5
1
Ipk/IO = 10
0.5
0
Ipk/IO = 20
0
Figure 5. Current Derating
1
2
3
4
5
6
7
8
IO, AVERAGE FORWARD CURRENT (A)
Figure 6. Forward Power Dissipation
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3
9
MBRS540T3G, NRVBS540T3G
1000
TJ, DERATED OPERATING TEMPERATURE (°C)
TYPICAL CHARACTERISTICS
C, CAPACITANCE (pF)
TJ = 25 °C
100
0
5
10
15
20
25
30
VR, REVERSE VOLTAGE (V)
35
40
125
RqJA = 12 °C/W
115
105
RqJA = 47 °C/W
95
RqJA = 81 °C/W
85
RqJA = 111 °C/W
75
RqJA = 136 °C/W
65
55
0
Figure 7. Capacitance
35
10
15
20
25
30
VR, DC REVERSE VOLTAGE (V)
5
40
45
Figure 8. Typical Operating Temperature
Derating
r(t), TRANSIENT THERMAL RESPONSE (C/W)
1000
100 D = 0.5
10
0.2
0.1
P(pk)
0.05
0.02
1 0.01
Test Type > min pad 1 oz
RqJC = min pad 1 oz C/W
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.1
0.00001
0.0001
0.001
0.01
0.1
1
100
10
1000
t, TIME (s)
r(t), TRANSIENT THERMAL RESPONSE (C/W)
Figure 9. Thermal Response − MBRS540T3G, NRVBS540T3G on min pad
100
D = 0.5
0.2
10
0.1
P(pk)
0.05
1
0.02
0.01
0.1
0.00001
Test Type > min pad 1 oz
RqJC = min pad 1 oz C/W
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.0001
0.001
0.01
0.1
1
10
t, TIME (s)
Figure 10. Thermal Response − MBRS540T3G, NRVBS540T3G on 1” pad
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4
100
1000
MBRS540T3G, NRVBS540T3G
PACKAGE DIMENSIONS
SMC
CASE 403−03
ISSUE E
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P.
4. 403-01 THRU -02 OBSOLETE, NEW STANDARD 403-03.
E
b
DIM
A
A1
b
c
D
E
HE
L
L1
D
MIN
1.90
0.05
2.92
0.15
5.59
6.60
7.75
0.76
MILLIMETERS
NOM
MAX
2.13
2.41
0.10
0.15
3.00
3.07
0.23
0.30
5.84
6.10
6.86
7.11
7.94
8.13
1.02
1.27
0.51 REF
MIN
0.075
0.002
0.115
0.006
0.220
0.260
0.305
0.030
INCHES
NOM
0.084
0.004
0.118
0.009
0.230
0.270
0.313
0.040
0.020 REF
MAX
0.095
0.006
0.121
0.012
0.240
0.280
0.320
0.050
A
L
L1
c
A1
SOLDERING FOOTPRINT*
4.343
0.171
3.810
0.150
2.794
0.110
SCALE 4:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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5
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MBRS540T3/D