Type IPB081N06L3 G IPP084N06L3 G IPI084N06L3 G OptiMOS™3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters VDS 60 V RDS(on),max (SMD) 8.1 mΩ ID 50 A • Excellent gate charge x R DS(on) product (FOM) • N-channel, logic level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 Type IPB081N06L3 G IPP084N06L3 G IPI084N06L3 G Package PG-TO263-3 PG-TO220-3 PG-TO262-3 Marking 081N06L 084N06L 084N06L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C2) 50 T C=100 °C 50 Unit A Pulsed drain current3) I D,pulse T C=25 °C 200 Avalanche energy, single pulse4) E AS I D=50 A, R GS=25 Ω 43 mJ Gate source voltage V GS ±20 V Power dissipation P tot 79 W Operating and storage temperature T j, T stg -55 ... 175 °C T C=25 °C 1) J-STD20 and JESD22 Current is limited by bondwire; with an R thJC=1.9 K/W the chip is able to carry 73 A. 3) See figure 3 for more detailed information 4) See figure 13 for more detailed information 2) Rev. 2.24 page 1 2012-11-28 IPB081N06L3 G IPP084N06L3 G IPI084N06L3 G Parameter Values Symbol Conditions Unit min. typ. max. - - 1.9 minimal footprint - - 62 6 cm² cooling area5) - - 40 60 - - Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, R thJA junction - ambient K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=34 µA 1.2 1.7 2.2 Zero gate voltage drain current I DSS V DS=60 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=60 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=50 A - 7.0 8.4 mΩ V GS=4.5 V, I D=25 A - 9.7 14.3 V GS=10 V, I D=50 A, (SMD) - 6.7 8.1 V GS=4.5 V, I D=25 A, (SMD) - 9.4 14 - 0.9 - Ω 35 69 - S Drain-source on-state resistance R DS(on) Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=50 A 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.24 page 2 2012-11-28 IPB081N06L3 G IPP084N06L3 G IPI084N06L3 G Parameter Values Symbol Conditions Unit min. typ. max. - 3700 4900 - 690 920 Dynamic characteristics pF Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 31 - Turn-on delay time t d(on) - 15 - Rise time tr - 26 - Turn-off delay time t d(off) - 37 - Fall time tf - 7 - Gate to source charge Q gs - 14 - Gate to drain charge Q gd - 5 - Switching charge Q sw - 12 - Gate charge g total Qg - 22 29 Gate plateau voltage V plateau - 3.8 - Output charge Q oss - 34 45 nC - - 50 A - - 200 - 1.0 1.2 V - 40 - ns - 39 - nC V GS=0 V, V DS=30 V, f =1 MHz V DD=30 V, V GS=10 V, I D=20 A, R G=1.6 Ω ns Gate Charge Characteristics6) V DD=30 V, I D=50 A, V GS=0 to 4.5 V V DD=30 V, V GS=0 V nC V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 6) T C=25 °C V GS=0 V, I F=50 A, T j=25 °C V R=30 V, I F=20A, di F/dt =100 A/µs See figure 16 for gate charge parameter definition Rev. 2.24 page 3 2012-11-28 IPB081N06L3 G IPP084N06L3 G IPI084N06L3 G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 100 60 90 50 80 70 40 ID [A] Ptot [W] 60 50 30 40 20 30 20 10 10 0 0 0 50 100 150 200 0 50 TC [°C] 100 150 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 101 limited by on-state resistance 1 µs 102 10 µs ZthJC [K/W] 1 ms 10 ms 101 0.5 100 100 µs ID [A] 200 DC 0.2 0.1 0.05 0.02 10-1 0.01 single pulse 100 10-1 10-2 10-1 100 101 102 VDS [V] Rev. 2.24 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2012-11-28 IPB081N06L3 G IPP084N06L3 G IPI084N06L3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 200 17 7V 10 V 6 V 3.5 V 16 180 4V 5V 4.5 V 5V 15 160 14 140 13 ID [A] 120 RDS(on) [mΩ] 4.5 V 100 80 4V 12 11 10 6V 9 60 40 8 7V 7 10 V 3.5 V 20 6 3V 0 5 0 1 2 3 4 0 5 50 100 VDS [V] 150 200 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 100 120 100 80 80 gfs [S] ID [A] 60 60 40 40 20 20 175 °C 25 °C 0 0 0 2 4 6 50 100 150 ID [A] VGS [V] Rev. 2.24 0 page 5 2012-11-28 IPB081N06L3 G IPP084N06L3 G IPI084N06L3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=50 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 20 3 18 2.5 16 14 12 VGS(th) [V] RDS(on) [mΩ] 2 max 10 8 340 µA 1.5 34µA typ 1 6 4 0.5 2 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 Tj [°C] Tj [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 103 Ciss Coss 103 102 175 °C, 98% 25 °C IF [A] C [pF] 175 °C 102 Crss 25 °C, 98% 101 101 100 0 20 40 60 VDS [V] Rev. 2.24 0 0.5 1 1.5 2 VSD [V] page 6 2012-11-28 IPB081N06L3 G IPP084N06L3 G IPI084N06L3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=50 A pulsed parameter: T j(start) parameter: V DD 10 100 30 V 8 150 °C 25 °C 48 V 6 IAS [A] VGS [V] 100 °C 12 V 10 4 2 0 1 0.1 1 10 100 0 1000 10 20 30 40 50 Qgate [nC] tAV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 70 V GS Qg VBR(DSS) [V] 65 60 V g s(th) 55 Q g (th) Q sw Q gs 50 -60 -20 20 60 100 140 Q gate Q gd 180 Tj [°C] Rev. 2.24 page 7 2012-11-28 IPB081N06L3 G IPP084N06L3 G IPI084N06L3 G PG-TO220-3 Rev. 2.24 page 8 2012-11-28 IPB081N06L3 G IPP084N06L3 G IPI084N06L3 G PG-TO262-3 Rev. 2.24 page 9 2012-11-28 IPB081N06L3 G IPP084N06L3 G IPI084N06L3 G PG-TO263 (D²-Pak) Rev. 2.24 page 10 2012-11-28 IPB081N06L3 G IPP084N06L3 G IPI084N06L3 G Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.24 page 11 2012-11-28