IPP023N04N G Ie]R IPB023N04N G ™ "%&$!"# 3 Power-Transistor Product Summary Features Q & ( , - 7@B( + :? 8 2 ? 5 . ? :? D6BB EAD:3 = 6 ) @G6B, EAA= I Q * E2 = :7:65 2 44@B5:? 8 D@ $ )# 7@BD2 B86D2 AA= :42 D:@? C V 9H ,( K R , @? >2 H *&+ Z" I9 1( 6 Q' 492 ? ? 6= Q' @B> 2 == 6F6= Q. = DB2 = @G @? B6C:CD2 ? 46 R 9H"\[# Q F2 = 2 ? 496 D6CD65 Q ) 3 7B66 A= 2D :? 8 + @" , 4@> A= :2 ? D Q" 2 = @86? 7B66 2 44@B5:? 8 D@ # Type #) ' ' ! #) ) ' ' ! Package E=%ID*.+%+ E=%ID**(%+ Marking (*+C(,C (*+C(,C Maximum ratings, 2 DT W T E? = 6CC @D96BG:C6 CA64:7:65 Parameter Symbol Conditions @? D :? E@EC 5B 2 :? 4EBB6? D I9 Value V =H / T 8 T 1( V =H / T 8 T 1( Unit 6 ) E= C65 5B2 :? 4EBB6? D*# I 9$]aY_R T 8 T ,(( F2 = 2 ? 496 4EBB6? D C:? 8= 6 AE= C6+# I 6H T 8 T 1( F2 = 2 ? 496 6? 6B8I C:? 8= 6 AE= C6 E 6H I 9 R =H " )-( Z@ !2 D6 C@EB46 F@= D2 86 V =H q*( K )# + 6F $ , - 2 ? 5 $ , A2 86 IPP023N04N G IPB023N04N G Maximum ratings, 2 DT W T E? = 6CC @D96BG:C6 CA64:7:65 Parameter Symbol Conditions ) @G6B5:CC:A2 D:@? P `\` ( A6B2 D:? 8 2 ? 5 CD@B 2 86 D6> A6B2 DEB6 T W T _`T Value T 8 T # 4= :> 2 D :4 42 D68@BI #' # Parameter Unit )./ L T Values Symbol Conditions Unit min. typ. max. % % (&1 % % ,( ,( % % Thermal characteristics -96B> 2 =B6C:CD2 ? 46 ;E? 4D:@? 42 C6 R `U@8 , & F6BC:@? 56F:46 @? ) R `U@6 > :? :> 2 =7@@DAB:? D 4> V 4@@= :? 8 2 B62 ,# A'L Electrical characteristics, 2 DT W T E? = 6CC @D96BG:C6 CA64:7:65 Static characteristics B2 :? C@EB46 3 B62 <5@G? F@= D2 86 V "7G#9HH V =H / I 9 > !2 D6 D9B6C9@= 5 F@= D2 86 V =H"`U# V 9H4V =H I 9 W * % , 16B@ 82 D6 F@= D2 86 5B 2 :? 4EBB6? D I 9HH V 9H / V =H / T W T % (&) ) V 9H / V =H / T W T % )( )(( K s6 !2 D6C@EB46 = 62 <2 86 4EBB6? D I =HH V =H / V 9H / % )( )(( [6 B2 :? C@EB46 @? CD2 D6 B6C:CD2 ? 46-# R 9H"\[# V =H / I 9 % )&1 *&+ Z" !2 D6 B6C:CD 2 ? 46 R= % )&1 % " I^N[_P\[QaP`N[PR g S_ /- )-( % H *# , 66 7:8EB 6 7@B> @B 6 56D 2 := 65 :? 7@B > 2 D:@? +# , 66 7:8EB 6 7@B> @B 6 56D 2 := 65 :? 7@B >2 D :@? ,# 6F:46 @? > > H > > H > > 6A@HI ) 4@? ? 64D :@? ) :C F6B D:42 =:? CD := =2 :B -# + 6F gV 9Hg5*gI 9gR 9H"\[#ZNd I 9 + G:D9 4> @? 6 = 2 I6B W > D9:4< 4@AA6B2 B 62 7@B5B2 :? & 62 CEB65 7B @> 5B 2 :? D 23 D @ C@EB46 A:? A2 86 IPP023N04N G IPB023N04N G Parameter Values Symbol Conditions Unit min. typ. max. % /+(( )(((( ]< % *((( */(( Dynamic characteristics #? AED42 A2 4:D2 ? 46 C V__ ( EDAED42 A2 4:D2 ? 46 C \__ + 6F6BC6 DB2 ? C76B42 A2 4:D2 ? 46 8^__ % // % -EB? @? 56= 2 I D:> 6 t Q"\[# % */ % + :C6 D:> 6 t^ % .&. % -EB? @7756= 2 I D:> 6 t Q"\SS# % ,( % tS % /&0 % !2 D6 D@ C@EB46 492 B86 Q T_ % +- % !2 D6 492 B86 2 DD9B6C9@= 5 Q T"`U# % ** % !2 D6 D@ 5B2 :? 492 B86 Q TQ % )) % , G:D49:? 8 492 B86 Q _c % *, % !2 D6 492 B86 D@D 2= QT % 1( )*( !2 D6 A= 2 D62 E F@= D 2 86 V ]YN`RNa % ,&0 % K !2 D6 492 B86 D@D 2= CI? 4 - Q T"_e[P# V 9H / V =H D@ / % 0- % [8 ( EDAED492 B86 Q \__ V 99 / V =H / % /+ % % % 1( % % ,(( 2= =D:> 6 V =H / V 9H / f & " J V 99 / V =H / I 9 R = " [_ !2 D6 92 BT6 92 B2 4D6B:CD :4C.# V 99 / I 9 V =H D@ / [8 Reverse Diode :@56 4@? D:? E@EC 7@BG2 B5 4EBB6? D IH 6 T 8 T :@56 AE= C6 4EBB 6? D I H$]aY_R :@56 7@BG2 B5 F@= D2 86 V H9 V =H / I < T W T % (&1+ )&* + 6F6BC6 B64@F6BI 492 B 86 Q ^^ V G / I <4I H Qi <'Qt W C % 0( % .# + 6F K [8 , 66 7:8EB 6 7@B82 D6 492 B 86 A2 B2 > 6D6B567:? :D :@? A2 86 IPP023N04N G IPB023N04N G 1 Power dissipation 2 Drain current P `\`4S"T 8# I 94S"T 8 V =H" / 200 100 80 150 I D [A] P tot [W] 60 100 40 50 20 0 0 0 50 100 150 200 0 50 100 T C [°C] 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I 94S"V 9H T 8 T D 4( Z `U@84S"t ]# A2 B2 > 6D6B t ] A2 B2 > 6D6B D 4t ]'T 103 100 = :> :D 65 3 I @? CD2 D 6 ^R_V_`N[PR WC (&- WC (&* W C 10-1 Z thJC [K/W] 102 I D [A] 98 >C (&) (&((&(* (&() >C 101 10-2 100 10 10-3 -1 10 0 10 1 10 2 V DS [V] + 6F C:? 8= 6 AE= C6 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] A2 86 IPP023N04N G IPB023N04N G 5 Typ. output characteristics 6 Typ. drain-source on resistance I 94S"V 9H T W T R 9H"\[#4S"I 9 T W T A2 B 2 > 6D6B V =H A2 B2 > 6D6B V =H 400 4 / / / / 300 / 3 R DS(on) [m ] I D [A] / / 200 / 100 / 2 / 1 / 0 0 0 1 2 3 0 40 80 V DS [V] 120 160 200 160 200 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I 94S"V =H KV 9Hg5*gI 9gR 9H"\[#ZNd g S_4S"I 9 T W T A2 B 2 > 6D6B T W 400 250 200 300 g fs [S] I D [A] 150 200 100 100 50 T T 0 0 0 1 2 3 4 5 6 7 + 6F 0 40 80 120 I D [A] V GS [V] A2 86 IPP023N04N G IPB023N04N G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R 9H"\[#4S"T W I 9 V =H / V =H"`U#4S"T W V =H4V 9H I 9 #6 5 4 4 3 V GS(th) [V] R DS(on) [m ] 3 2 2 `e] 1 1 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C 4S"V 9H V =H / f & " J I <4S"V H9# A2 B2 > 6D6B TW 104 103 8V__ 8\__ T 103 102 I F [A] C [pF] T 102 T 101 8^__ 101 100 0 10 20 30 40 V DS [V] + 6F T 0 0.5 1 1.5 2 V SD [V] A2 86 IPP023N04N G IPB023N04N G 13 Avalanche characteristics 14 Typ. gate charge I 6H4S"t 6K R =H " V =H4S"Q TN`R I 9 AE= C65 A2 B 2 > 6D6B T W"_`N^`# A2 B2 > 6D6B V 99 100 12 T T / T 10 / / V GS [V] I AV [A] 8 10 6 4 2 1 0 10-1 100 101 102 103 0 20 t AV [µs] 40 60 80 100 Q gate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V 7G"9HH#4S"T W I 9 > 45 V =H Qg V BR(DSS) [V] 40 35 V T _"`U# 30 25 Q T "`U# Q _c Q T_ 20 -60 -20 20 60 100 140 Q g ate Q TQ 180 T j [°C] + 6F A2 86 IPP023N04N G IPB023N04N G Package Outline Footprint: + 6F PG-TO263-3 Packaging: A2 86 IPP023N04N G IPB023N04N G Package Outline + 6F PG-TO220-3 A2 86 IPP023N04N G IPB023N04N G Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office "ccc&V[SV[R\[&P\Z#& Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. + 6F A2 86