NTD4909N D

NTD4909N
Power MOSFET
30 V, 41 A, Single N−Channel, DPAK/IPAK
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are Pb−Free Devices
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RDS(on) MAX
V(BR)DSS
Applications
• CPU Power Delivery
• DC−DC Converters
8.0 mW @ 10 V
30 V
D
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
"20
V
ID
12.1
A
Parameter
TA = 25°C
TA = 100°C
Power Dissipation
(RqJA) (Note 1)
TA = 25°C
Continuous Drain
Current (RqJA)
(Note 2)
TA = 25°C
S
8.6
PD
2.6
W
4
4
ID
TA = 100°C
TA = 25°C
TC = 25°C
6.2
PD
ID
TC = 100°C
Power Dissipation
(RqJC) (Note 1)
tp=10ms
Current Limited by Package
1.37
W
A
41
29
TC = 25°C
PD
29.4
W
TA = 25°C
IDM
167
A
TA = 25°C
IDmaxPkg
60
A
Operating Junction and Storage Temperature
Source Current (Body Diode)
TJ, Tstg
−55 to
175
°C
IS
27
A
Drain to Source dV/dt
dV/dt
7.0
V/ns
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,
L = 0.1 mH, IL(pk) = 24 A, RG = 25 W)
EAS
28
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
4
A
8.8
TL
°C
260
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 in sq pad size, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
1 2
1
3
CASE 369AA
DPAK
(Bent Lead)
STYLE 2
2 3
1
2
3
CASE 369AD
CASE 369D
IPAK
IPAK
(Straight Lead) (Straight Lead
DPAK)
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
AYWW
49
09NG
Steady
State
Continuous Drain
Current (RqJC)
(Note 1)
Pulsed Drain Current
N−Channel
G
AYWW
49
09NG
Power Dissipation
(RqJA) (Note 2)
41 A
12 mW @ 4.5 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Continuous Drain
Current (RqJA)
(Note 1)
ID MAX
4
Drain
AYWW
49
09NG
•
•
•
•
2
1 2 3
1 Drain 3
Gate Source Gate Drain Source 1 2 3
Gate Drain Source
A
Y
WW
4909N
G
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
May, 2014 − Rev. 3
1
Publication Order Number:
NTD4909N/D
NTD4909N
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Unit
Junction−to−Case (Drain)
Parameter
RqJC
5.1
°C/W
Junction−to−TAB (Drain)
RqJC−TAB
4.3
Junction−to−Ambient − Steady State (Note 3)
RqJA
58.2
Junction−to−Ambient − Steady State (Note 4)
RqJA
110
3. Surface−mounted on FR4 board using 1 in sq pad size, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Unit
OFF CHARACTERISTICS
V
15
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = "20 V
VGS(TH)
VGS = VDS, ID = 250 mA
VGS = 0 V,
VDS = 24 V
TJ = 25°C
mV/°C
1.0
TJ = 125°C
mA
10
"100
nA
2.2
V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
VGS(TH)/TJ
RDS(on)
gFS
1.7
4.0
VGS = 10 V
VGS = 4.5 V
Forward Transconductance
1.0
ID = 30 A
6.5
ID = 15 A
6.5
ID = 30 A
9.5
ID = 15 A
9.5
VDS = 1.5 V, ID = 30 A
mV/°C
8.0
mW
12
52
S
1314
pF
CHARGES AND CAPACITANCES
Input Capacitance
Ciss
VGS = 0 V, f = 1.0 MHz,
VDS = 15 V
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
17.4
Total Gate Charge
QG(TOT)
7.6
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
Total Gate Charge
487
nC
VGS = 4.5 V, VDS = 15 V,
ID = 30 A
2.1
VGS = 10 V, VDS = 15 V,
ID = 30 A
17.5
nC
td(on)
11
ns
tr
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
21
QGD
QG(TOT)
4.3
1.3
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(off)
tf
17
2.7
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
7. Assume terminal length of 110 mils.
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2
NTD4909N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Symbol
Test Condition
Min
Typ
td(on)
8.0
tr
19
td(off)
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
Max
Unit
ns
21
2.3
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
VGS = 0 V,
IS = 30 A
TJ = 25°C
0.9
TJ = 125°C
0.8
tRR
30
Charge Time
ta
16
Discharge Time
tb
Reverse Recovery Time
VGS = 0 V, dIs/dt = 100 A/ms,
IS = 30 A
1.1
V
ns
14
QRR
20
nC
Source Inductance (Note 7)
LS
2.99
nH
Drain Inductance, DPAK
LD
0.0164
Drain Inductance, IPAK (Note 7)
LD
Gate Inductance (Note 7)
LG
4.9
Gate Resistance
RG
1.0
PACKAGE PARASITIC VALUES
TA = 25°C
1.88
2.0
W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
7. Assume terminal length of 110 mils.
ORDERING INFORMATION
Package
Shipping†
NTD4909NT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
NTD4909N−1G
IPAK
(Pb−Free)
75 Units / Rail
NTD4909N−35G
IPAK Trimmed Lead
(Pb−Free)
75 Units / Rail
Order Number
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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3
NTD4909N
TYPICAL CHARACTERISTICS
90
7 V 4.5 V
10 V
4.2 V VGS = 4.0 V
VDS = 10 V
70
60
3.6 V
50
3.4 V
40
3.2 V
30
3.0 V
20
2.8 V
10
2.6 V
2.4 V
0
1
2
ID, DRAIN CURRENT (A)
3.8 V
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
80
TJ = 25°C
3
40
TJ = 25°C
20
4
TJ = 125°C
TJ = −55°C
2.0
2.5
3.0
3.5
4.0
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.020
ID = 30 A
TJ = 25°C
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.004
3.0
60
0
4.0
5.0
6.0
7.0
8.0
9.0
VGS (V)
10
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
80
4.5
0.014
0.013
TJ = 25°C
0.012
0.011
0.010
VGS = 4.5 V
0.009
0.008
VGS = 10 V
0.007
0.006
0.005
0.004
15
25
35
45
55
65
75
85
95
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. VGS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
VGS = 0 V
1.8
ID = 30 A
VGS = 10 V
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
10,000
2.0
1.6
1.4
1.2
1.0
TJ = 150°C
1000
TJ = 125°C
100
TJ = 85°C
0.8
0.6
−50 −25
10
0
25
50
75
100
125
150
175
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
30
NTD4909N
TYPICAL CHARACTERISTICS
VGS, GATE−TO−SOURCE VOLTAGE (V)
2000
C, CAPACITANCE (pF)
VGS = 0 V
TJ = 25°C
1500
Ciss
1000
Coss
500
Crss
0
0
5
10
15
20
25
15.0
10.5
Qgs
4.5
VDD = 15 V
VGS = 10 V
ID = 30 A
3.0
1.5
0
0
2
4
8
6
10
12
14
16
18
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
20
30
VGS = 0 V
IS, SOURCE CURRENT (A)
t, TIME (ns)
Qgd
6.0
30
td(off)
100
tf
tr
10
td(on)
25
20
15
TJ = 125°C
10
5
TJ = 25°C
0
1
1
10
0
100
0.2
0.4
0.6
0.8
1.0
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
1000
ID, DRAIN CURRENT (A)
9.0
7.5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VDD = 15 V
ID = 15 A
VGS = 10 V
100
10 ms
100 ms
1 ms
10
0.1
QT
12.0
1000
1
TJ = 25°C
13.5
VGS = 10 V
Single Pulse
TC = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
0.1
10 ms
dc
1
10
30
ID = 24 A
25
20
15
10
5
0
25
100
50
75
100
125
150
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
175
NTD4909N
TYPICAL CHARACTERISTICS
100
R(t) (°C/W)
10
Duty Cycle = 50%
20%
10%
5%
2%
1
1%
0.1
Single Pulse
0.01
Psi Tab−A
0.000001
0.00001
0.0001
0.001
0.1
0.01
1
10
PULSE TIME (sec)
Figure 13. FET Thermal Response
60
50
40
GFS (S)
0.001
30
20
10
0
0
5
10
15
20
25
30
35
ID (A)
Figure 14. GFS vs. ID
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6
40
45
50
100
1000
NTD4909N
PACKAGE DIMENSIONS
3.5 MM IPAK, STRAIGHT LEAD
CASE 369AD
ISSUE B
E
E3
L2
NOTES:
1.. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2.. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.30mm FROM TERMINAL TIP.
4. DIMENSIONS D AND E DO NOT INCLUDE
MOLD GATE OR MOLD FLASH.
A
E2
A1
D2
D
L1
L
T
SEATING
PLANE
A1
b1
e
2X
A2
3X
E2
b
0.13
M
T
D2
DIM
A
A1
A2
b
b1
D
D2
E
E2
E3
e
L
L1
L2
MILLIMETERS
MIN
MAX
2.19
2.38
0.46
0.60
0.87
1.10
0.69
0.89
0.77
1.10
5.97
6.22
4.80
−−−
6.35
6.73
4.57
5.45
4.45
5.46
2.28 BSC
3.40
3.60
−−−
2.10
0.89
1.27
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
OPTIONAL
CONSTRUCTION
IPAK
CASE 369D
ISSUE C
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
H
D
G
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
3 PL
0.13 (0.005)
M
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
T
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7
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
NTD4909N
PACKAGE DIMENSIONS
DPAK (SINGLE GUAGE)
CASE 369AA
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
A
A
E
b3
c2
B
4
L3
Z
D
1
2
H
DETAIL A
3
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
L4
b2
e
c
b
0.005 (0.13)
M
C
H
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
0.244
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
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NTD4909N/D