MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMPower-Transistor,60V IPT007N06N DataSheet Rev.2.1 Final PowerManagement&Multimarket OptiMOSTMPower-Transistor,60V IPT007N06N 1Description HSOF Features Tab •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 12 34 56 78 Table1KeyPerformanceParameters Parameter Value Unit VDS 60 V RDS(on),max 0.75 mΩ ID 300 A Qoss 227 nC QG(0V..10V) 216 nC Drain Tab Gate Pin 1 Source Pin 2-8 Type/OrderingCode Package Marking RelatedLinks IPT007N06N PG-HSOF-8-1 007N06N - 1) J-STD20 and JESD22 Final Data Sheet 2 Rev.2.1,2014-02-20 OptiMOSTMPower-Transistor,60V IPT007N06N TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Final Data Sheet 3 Rev.2.1,2014-02-20 OptiMOSTMPower-Transistor,60V IPT007N06N 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition Min. Typ. Max. - - 300 300 52 A ID,pulse - - 1200 A TC=25°C EAS - - 1100 mJ ID=150A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 375 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 Unit Note/TestCondition ID Continuous drain current Pulsed drain current 2) Avalanche energy, single pulse 3) VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=10V,TC=25°C,RthJA=40K/W 1) 3Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - 0.2 0.4 K/W - Device on PCB, minimal footprint RthJA - - 62 K/W - Device on PCB, 6 cm² cooling area 1) RthJA - - 40 K/W - 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information Final Data Sheet 4 Rev.2.1,2014-02-20 OptiMOSTMPower-Transistor,60V IPT007N06N 4Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 2.8 3.3 V VDS=VGS,ID=280µA - 0.5 10 1 100 µA VDS=60V,VGS=0V,Tj=25°C VDS=60V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 0.66 0.85 0.75 1 mΩ VGS=10V,ID=150A VGS=6V,ID=75A Gate resistance RG - 1.8 2.7 Ω - Transconductance gfs 160 320 - S |VDS|>2|ID|RDS(on)max,ID=100A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 60 - Gate threshold voltage VGS(th) 2.1 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 16000 21280 pF VGS=0V,VDS=30V,f=1MHz Output capacitance Coss - 3400 4522 pF VGS=0V,VDS=30V,f=1MHz Reverse transfer capacitance Crss - 229 458 pF VGS=0V,VDS=30V,f=1MHz Turn-on delay time td(on) - 38 - ns VDD=30V,VGS=10V,ID=100A, RG,ext=1.8Ω Rise time tr - 18 - ns VDD=30V,VGS=10V,ID=100A, RG,ext=1.8Ω Turn-off delay time td(off) - 76 - ns VDD=30V,VGS=10V,ID=100A, RG,ext=1.8Ω Fall time tf - 22 - ns VDD=30V,VGS=10V,ID=100A, RG,ext=1.8Ω Unit Note/TestCondition Table6Gatechargecharacteristics1) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 67 - nC VDD=30V,ID=100A,VGS=0to10V Gate charge at threshold Qg(th) - 47 - nC VDD=30V,ID=100A,VGS=0to10V Gate to drain charge Qgd - 39 - nC VDD=30V,ID=100A,VGS=0to10V Switching charge Qsw - 58 - nC VDD=30V,ID=100A,VGS=0to10V Gate charge total Qg - 216 287 nC VDD=30V,ID=100A,VGS=0to10V Gate plateau voltage Vplateau - 4.2 - V VDD=30V,ID=100A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 192 255 nC VDS=0.1V,VGS=0to10V Output charge Qoss - 227 - - VDD=30V,VGS=0V 1) See ″Gate charge waveforms″ for parameter definition Final Data Sheet 5 Rev.2.1,2014-02-20 OptiMOSTMPower-Transistor,60V IPT007N06N Table7Reversediode Parameter Symbol Diode continuous forward current Values Unit Note/TestCondition 300 A TC=25°C - 1200 A TC=25°C - 0.87 1 V VGS=0V,IF=150A,Tj=25°C trr - 87 174 ns VR=30V,IF=100A,diF/dt=100A/µs Qrr - 144 - nC VR=30V,IF=100A,diF/dt=100A/µs Min. Typ. Max. IS - - Diode pulse current IS,pulse - Diode forward voltage VSD Reverse recovery time Reverse recovery charge Final Data Sheet 6 Rev.2.1,2014-02-20 OptiMOSTMPower-Transistor,60V IPT007N06N 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 400 350 350 300 300 250 200 ID[A] Ptot[W] 250 200 150 150 100 100 50 50 0 0 25 50 75 100 125 150 0 175 0 25 50 75 TC[°C] 100 125 150 175 200 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 4 100 10 1 µs 103 10 µs 0.5 10-1 ID[A] 102 0.2 ZthJC[K/W] 100 µs 1 ms 1 10 10 ms 0.1 0.05 0.02 10-2 0.01 DC 100 single pulse 10-1 10-1 100 101 102 10-3 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 7 Rev.2.1,2014-02-20 OptiMOSTMPower-Transistor,60V IPT007N06N Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 1200 3.0 10 V 6V 7V 1000 2.5 800 2.0 RDS(on)[mΩ] ID[A] 5.5 V 600 400 5V 1.5 5.5 V 6V 1.0 5V 7V 200 0 10 V 0.5 0.0 0.5 1.0 1.5 2.0 2.5 0.0 3.0 0 200 400 VDS[V] 600 800 1000 1200 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 1200 450 400 1000 350 300 gfs[S] ID[A] 800 600 400 250 200 150 100 200 50 175 °C 0 0 2 25 °C 4 6 8 0 0 VGS[V] 100 150 200 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 50 gfs=f(ID);Tj=25°C 8 Rev.2.1,2014-02-20 OptiMOSTMPower-Transistor,60V IPT007N06N Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 1.6 4 1.2 3 2800 µA VGS(th)[V] RDS(on)[mΩ] 280 µA max 0.8 typ 0.4 2 1 0.0 -60 -20 20 60 100 140 0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=150A;VGS=10V VGS(th)=f(Tj);VGS=VDS Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 5 104 10 25 °C 175 °C 25 °C, 98% 175 °C, 98% Ciss 103 Coss IF[A] C[pF] 104 3 10 Crss 102 101 0 20 102 101 40 60 100 0.0 0.5 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 9 Rev.2.1,2014-02-20 OptiMOSTMPower-Transistor,60V IPT007N06N Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 103 12 30 V 10 12 V 48 V 125 °C 100 °C 8 25 °C IAV[A] VGS[V] 102 101 6 4 2 100 100 101 102 103 0 0 50 tAV[µs] 100 150 200 250 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=100Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms 68 66 64 VBR(DSS)[V] 62 60 58 56 54 52 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 10 Rev.2.1,2014-02-20 OptiMOSTMPower-Transistor,60V IPT007N06N 6PackageOutlines 1) partially covered with Mold Flash DIM A b b1 b2 c D D2 E E1 E4 E5 e H H1 H2 H3 H4 N K1 L L1 L2 L4 MILLIMETERS MIN MAX 2.20 2.40 0.70 0.90 9.70 9.90 0.42 0.50 0.40 0.60 10.28 10.58 3.30 9.70 10.10 7.50 8.50 9.46 1.20 (BSC) 11.48 6.55 11.88 6.75 INCHES MIN 0.087 0.028 0.382 0.017 0.016 0.405 0.295 0.335 0.372 0.047 (BSC) 0.452 0.258 2 0 2 4mm EUROPEAN PROJECTION 0.083 ISSUE DATE 20-02-2014 0.051 REVISION 02 0.028 0.024 1.30 0 SCALE 0.468 0.266 0.063 0.70 0.60 1.00 0.398 0.281 0.141 0.128 8 0.165 2.10 DOCUMENT NO. Z8B00169619 0.130 0.382 7.15 3.59 3.26 8 4.18 1.60 MAX 0.094 0.035 0.390 0.020 0.024 0.416 0.039 Figure1OutlinePG-HSOF-8-1,dimensionsinmm/inches Final Data Sheet 11 Rev.2.1,2014-02-20 OptiMOSTMPower-Transistor,60V IPT007N06N RevisionHistory IPT007N06N Revision:2014-02-20,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2014-02-06 Release of final version 2.1 2014-02-20 Update Diagram 12 WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 12 Rev.2.1,2014-02-20