RF Modules Subsystems Brochure

Defense & Security Solutions
RF Modules and Subsystems
RF-Modules-Subsystems-Brochure-v2.indd 2
5/11/15 2:01 PM
1
RF-Modules-Subsystems-Brochure-v2.indd 1
5/11/15 2:01 PM
RF Microwave and Millimeter Wave Solutions for Defense & Security
Microsemi Corporation continues to build its RF Microwave and Millimeter Wave Solutions group, expanding its portfolio of industry
leading Defense and Homeland Security products. Microsemi also supports a wide range of high-reliability semiconductor products
including: Si and GaAs diodes, high power Si, SiC and GaN transistors, GaAs and SiGe MMICs.
Defense & Security Products
Our Application Experience Includes:
Our subsystems deliver integrated modules that fit
•
•
•
•
•
•
•
•
seamlessly into your system architecture. Our modules
utilize advanced, custom-designed semiconductors to
provide optimized solutions for our customer applications. Our
subsystem packaging technologies encompass SMT, discrete
hybrid MIC circuits, custom MMICs and bare die COB.
Millimeter Wave Personnel Imagers & Perimeter “Fences”
Unmanned Aerial Vehicles (UAV)
Airborne Surveillance Platforms
Radar Warning Receivers (RWR)
Missile Front-ends, Exciters, and Fuzes
Intelligent Battlefield Communications
Autonomous Landing Systems
Phased-Array, Monopulse and Fire Control Radar
Microsemi RF Microwave and Millimeter Wave Solutions combines products, technologies, experience, and resources of the world’s
premier RF components suppliers. Today, our portfolio is unmatched in both breadth and depth, providing incomparable capabilities
for our RF customers.
2
RF-Modules-Subsystems-Brochure-v2.indd 2
5/11/15 2:01 PM
Product Line Overview
• Low Noise Amplifiers
0.01 - 40 GHz
• Surface Mount Amplifiers
0.01 - 18 GHz
• Broadband
band Amplifiers
0.01 - 40 GHz
• Ultra Low Phase Noise Amplifiers
0.5 - 40 GHz
• High Power Narrow Band Amplifiers
0.5 - 40 GHz, up to 3.7 kW
• High Power Broadband Amplifiers
0.5 - 40 GHz, up to 100W
• High Power Rack Mount Amplifiers
0.5-40 GHz, up to 300W
• Millimeter Wave Amplifiers
26.5 - 75 GHz
• Multipliers
4 - 110 GHz output frequency
• Up/Down Converters
RF/LO frequencies up to 110 GHz
IF frequencies to 20 GHz
• Transceivers
Frequency capability up to 110 GHz
• Multi-function Assemblies
Frequency capability up to 110 GHz
3
RF-Modules-Subsystems-Brochure-v2.indd 3
5/11/15 2:02 PM
Low Noise Amplifiers
Microsemi-RFMS Low Noise Amplifier series exhibits outstanding noise
figure. Units incorporate single ended, distributed or balanced gain
stages optimized for the intended application. Multi-octave distributed
amplifiers provide the highest gain-bandwidth product. Low noise figure
and flatness is achieved.
Model
Number
Frequency Range
(GHz)
Gain
(dB) min
Flatness
(±dB) max
NF
(dB) max
P1dB
(dBm) min
OIP3
(dBm) nom
AML016L2814
AML0118L2512
AML18L3001
AML33L3201
AML48L3002
AML45L2802
AML56L2802
AML618L4011
AML812L3003
AML910L3003
AML1213L3002
AML1617L3002
0.1 - 6.0
0.1 - 18.0
1.0 - 8.0
3.1 - 3.6
4.0 - 8.0
4.4 - 5.0
5.9 - 6.4
6.0 - 18.0
8.0 - 12.0
9.5 - 10.5
12.2 - 13.2
16.0 - 17.0
28
24.8
30
32
30
28
28
40
30
30
30
30
1.25
1.5
2
1
1
1
1
2
1.5
1
1
1
1.3*
2.5*
1.8
0.6
1
0.7
0.7
1.6
1.3
1.2
1.3
1.4
7
6
13
18
10
10
10
10
10
10
10
10
14
16
22
28
20
18
18
20
18
18
18
18
VSWR
(In/Out)
nom
2.0:1
2.0:1
1.8:1
1.8:1
1.8:1
2.0:1
2.0:1
2.0:1
2.0:1
2.0:1
2.0:1
2.0:1
Voltage (V),
Current (mA)
12V, 190mA
12V, 160mA
12V, 110mA
12V, 150mA
12V, 100mA
12V, 100mA
12V, 100mA
12V, 220mA
12V, 150mA
12V, 150mA
12V, 150mA
12V, 150mA
*above 500 MHz
Surface Mount Amplifiers
Microsemi-RFMS surface mount (SMT) amplifiers support the need
for physically smaller systems by eliminating cable interconnects and
increasing packaging densities. Catalog surface mount low noise
and medium power gain blocks can be cascaded in a microstrip
transmission line environment. We also offer a unique approach to
manage higher power and high frequency (up to 18 GHz) applications
with our “SMP Plug-in” modules.
Model
Number
Frequency Range
(GHz)
Gain
(dB) min
Flatness
(±dB) max
NF
(dB) max
P1dB
(dBm) min
AML012P2611-S
AML056L2812-S
AML26P1711-S
AML23L2511-S
AML33L2511-S
AML55L2511-S
AML612L2212-S
AML612P2011-S
AML618P1211-S
0.1 - 2.0
0.5 - 6.0
2.0 - 6.0
2.8 - 3.1
3.1 - 3.7
5.4 - 5.9
6.0 - 12.0
6.0 - 12.0
6.0 - 18.0
26
28
17
24
24
23
20
18
12
1
1.5
1
0.5
0.75
0.75
1
1
1
1.5*
1.6
6
0.9
1
1.1
3
5
6.5
21
5
25
10
10
10
15
27
27
VSWR
(In/Out)
nom
2.0:1
2.0:1
1.8:1
1.6:1
1.6:1
1.6:1
1.8:1
1.8:1
1.8:1
Voltage (V),
Current (mA)
Package
9V,215mA
5V,150mA
9V,480mA
5V,90mA
5V,90mA
5V,90mA
5V,90mA
9V,350mA
12V,450mA
SMT-2
SMT08
SMT-2
SMT08
SMT08
SMT08
SMTH2
SMTH2
SMP2
*above 500 MHz
4
RF-Modules-Subsystems-Brochure-v2.indd 4
5/11/15 2:02 PM
Product Line Overview
Broadband Amplifiers
Multi-octave distributed amplifiers provide the highest gain-bandwidth
product. These amplifiers exhibit outstanding performances in
flatness, noise figure and output power.
Model
Number
Frequency Range
(GHz)
Gain
(dB) min
Flatness
(±dB) max
NF
(dB) max
P1dB
(dBm) min
OIP3
(dBm) nom
AML0118P3201
AML0126P3002
AML120P3201
AML118P2703
AML240L2201
AML618P4202
AML1840P2802
0.1 - 18.0
0.1 - 26.5
1.0 - 20.0
1.0 - 18.0
2.0 - 40.0
6.0 - 18.0
18.0 - 40.0
32
30
32
27
22
42
35
3
3
3.5
2
3
2.5
3
3.5*
6.0*
5
4
6
3
6.5
26*
22
27
27
15
35
22
32*
30
32
34
25
42
28
VSWR
(In/Out)
nom
2.5:1
2.0:1
2.0:1
2.0:1
2.0:1
1.8:1
2.0:1
Voltage (V),
Current (mA)
15V,750mA
12V,600mA
15V,1500mA
15V,525mA
12V,350mA
12V,2200mA
12V,800mA
*above 500MHz
Ultra Low Phase Noise Amplifiers
Microsemi-RFMS Low Phase Noise Amplifiers utilize MMICs and discrete
transistors with the lowest phase noise available in the industry. Silicon
bipolar is the preferred transistor technology for lowest phase noise
followed by InGaP HBT, then MESFET. These technologies are used to
best meet customer requirements. 100% testing, device lot selection, and
on-wafer variations are monitored to guarantee compliant performance.
Frequency
Range
(GHz)
Gain
(dB)
min
AML083PNA1801
0.8 - 3.0
AML26PNA1001
2.0 - 6.0
AML26PNC1511
2.0 - 6.0
AML218PNA3213
2 - 18
AML69PNA1601
6.0 - 9.0
AML69PNC1511
6.0 - 9.0
AML612PNA1411
6.0 - 12.0
AML812PNB1813
8.0 - 12.0
AML812PNA0803
8.0 - 12.0
AML1518PNA1711 15.0 - 18.0
AML4040PNB1511
40.0
18
10.5
15
32
16
14
14
18
8
14
15
Model
Number
5
RF-Modules-Subsystems-Brochure-v2.indd 5
Flatness
(±dB)
max
1
1
2
2.5
1
1
1
2
1.5
0.5
2
Phase Noise
100Hz
1KHz
10KHz
100KHz
1MHz
-150
-150
-145
-125
-140
-145
-143
-150
-145
-135
-135
-160
-160
-155
-140
-150
-155
-150
-160
-153
-145
-146
-166
-168
-160
-145
-155
-160
-155
-168
-160
-155
-150
-170
-174
-165
-155
-160
-165
-160
-172
-165
-163
-155
-173
-175
-170
-160
-165
-170
-167
-175
-168
-167
-160
NF
(dB)
max
P1dB
(dBm) min
VSWR
(In/Out)
nom
Voltage (V),
Current (mA)
5
6
7
4
6.5
8
6
7
6
6
-
17
16.5
34
25
23
34
25
17
25
26
24
2.5:1
1.5:1
1.5:1
2.0:1
1.8:1
1.4:1
2.0:1
1.5:1
1.8:1
1.8:1
2.0:1
12V,100mA
8V,115mA
12V,2700mA
12V,500mA
12V,450mA
12V,2300mA
12V,500mA
12V,250mA
12V,250mA
12V,500mA
6V,1200mA
5/11/15 2:02 PM
High-Power Narrow Band Amplifiers
This family of amplifiers covers most communication and radar bands, as well as other
popular frequency bands. Internally matched GaAs FET devices are frequently used. They
provide cost effective solutions with excellent linearity. Higher frequencies utilize in-house
proprietary technology to deliver as much as 10 watts at 34 GHz.
All amplifiers use in-house proprietary technology in the driver and preamplifier stages,
providing wide flexibility in the selection of gain and generally allowing a somewhat
wider band than specified for the internally matched device. It also provides desirable
characteristics, such as the combination of low noise with high-power.
Model
Number
L0505-50
L0910-45
L0809-45
L2426-40
L3236-38
L3434-40
MSC2931P3540
MSC010P4355
Frequency Range
(GHz)
5.3-5.9
9.0-10.5
8.5-9.6
24.0-26.0
32.0-36.0
34.0-34.5
29.5-31.0
1.02-1.04
Psat
(dBm)
50
45
45.5
39.5
38
40
40
66
Psat
(W)
100
30
35
9
6.3
10
10
3700
P1dB
(dBm)
49
44
44.5
39
37
39
N/A
Gain
(dB) min
50
45
50
40
40
45
35
40.65
Vd
(VDC)
Id
(A)
15
15
15
12
12
12
5
52
40
20
22
17
17
17
19
10
High-Power Broadband Amplifiers
Based on in-house proprietary technology, specifically developed to achieve
the highest possible power/bandwidth combination, this family of amplifiers
includes several models with exceptional performance, such as 40 watts of
power from 6 to 18 GHz or 6 watts from 33 to 37 GHz.
The modular construction of these amplifiers, combined with the tunability of
the basic modules, gives rise to an enormous variety. The list of basic models is
far from exhaustive and should be considered an indication of capability. Most
requests can be fulfilled with a combination of existing modules, thus offering a
customized amplifier at the same price and delivery as a standard model.
Model
Number
L0206-43
L0618-40
L0618-43
L0618-46
L0812-46
L1826-36
L1840-27
L2640-32
L2632-37
L3640-37
L0618-50-T523
RF-Modules-Subsystems-Brochure-v2.indd 6
Frequency Range
(GHz)
2.0-6.0
6.0-18.0
6.0-18.0
6.0-18.0
8.0-12.0
18.0-26.0
18.0-40.0
26.0-40.0
26.0-32.0
36.0-40.0
6.0-18.0
Psat
(dBm)
43
40
43
46
46
36
26.5
32
37
37.5
50
Psat
(W)
20
10
20
40
40
4
0.45
1.6
5
5.6
100
P1dB
(dBm)
42
38.5
41.5
44
44
35
25
31
36
36
N/A
Gain
(dB)
40
40
45
47
45
38
30
35
38
40
50
Vd
(VDC)
12
12
12
12
12
12
12
12
12
12
28-36
Id
(A)
32
12
25
52
28
8
4
5
10
17
35
6
5/11/15 2:02 PM
Product Line Overview
High-Power Rack Mount Amplifiers
Microsemi-RFMS highest-power amplifiers are based on novel coaxial and
waveguide combiners. Products are available in selected bands from 0.8 to
40 GHz. Most of our standard amplifier modules can be combined, giving
rise to a wide choice of bands, power outputs, and gains. Also, since we
keep a large stock of basic modules, delivery times are as short as eight
weeks for many of the most popular bands.
Model
Number
C033036-51
C090105-50
C0812-46
C0618-43
C0618-46
C095110-53
C059064-55
Frequency Range
(GHz)
Psat
(dBm)
3.3-3.6
9.0-10.5
8.0-12.0
6.0-18.0
6.0-18.0
9.5-11
5.9-6.4
Psat
(W)
125
100
40
20
40
53
55
P1dB
(dBm)
50
49
44
41.5
44.5
200
300
50
49
44
41.5
44.5
Pac
(kW)
1
1
0.4
0.3
0.75
Height
(in)
52
3
10.25
8.75
8.75
5.25
5.25
8.75
Millimeter Wave Amplifiers
With more than two decades of experience and a worldwide customer
base, Microsemi-RFMS is an established, leading-edge manufacturer of RF,
microwave, and millimeter-wave amplifiers. Employing the latest eutectic
attachment, ultrasonic/thermal compression bonding, and automated high
precision assembly techniques, Microsemi-RFMS amplifiers offer the most
predictable and repeatable electrical performance in the industry. With a vast
library of existing MIC modules, incorporating the finest MESFET, pHEMT,
and HBT semiconductors, Microsemi-RFMS is the answer when you need
to push the boundaries of electrical performance.
Model
Number
MSC1840L3001
MSC1840L3201
MSC2640L3701
MSC4060L3001
MSC6065L2001
Frequency Range
(GHz)
Gain
(dB) min
Flatness
(±dB) max
P1dB
(dBm) min
Noise Figure
(dB) max
18.0 - 40.0
18.0 - 40.0
26.0 - 40.0
40.0 - 60.0
60.0 - 65.0
30
32
37
30
20
2
2.5
2
3
1.5
10
15
10
10
10
4.5
5.5
3
8.5
8.5
VSWR
(In/Out)
nom
2.25:1
2.2:1
2.25:1
3.0:1
3.0:1
DC Current
(mA)
350
440
275
300
250
7
RF-Modules-Subsystems-Brochure-v2.indd 7
5/11/15 2:02 PM
High Power Gallium Nitride (GaN) Amplifiers
Microsemi-RFMS Gallium Nitride (GaN) amplifier products employ the latest
semiconductor technologies and present the very best performance to our
customers. Multi-octave amplifiers and application specific narrow band amplifiers
cover frequencies to 18.0 GHz. GaN amplifiers operate with voltages between
+28VDC to +50VDC (design dependent). Catalog designs offer power levels up
to 100 watts; custom designs to 300 watts are available. Standard options such
as TTL on/off, Integrated Output Isolator, Over-Temperature Shut-down, Power
Detectors at various frequency and gain specifications are available.
Frequency Range
(GHz)
Gain
(dB) min
Psat
(dBm) min
Psat
(dBm) typ.
Psat
(Watts) typ.
Voltage (V),
Current (A)
PAE
typ.
Dimensions
(in)
AML056P4013
AML056P4014
AML056P4511
AML056P4512
AML13P5013
AML26P4011
AML26P4012
AML26P4013
AML59P4512
AML59P4513
MSC58P4549
0.5 - 6.0
0.5 - 6.0
0.5 - 6.0
0.5 - 6.0
1.0 - 3.0
2.0 - 6.0
2.0 - 6.0
2.0 - 6.0
5.5 - 9.0
5.5 - 9.0
5.5 - 8.0
40
40
45
45
50
40
45
50
45
45
45
35
37
40
43
3
41
43
45.5
44
46
49
36
38
41
44
6
42
44
46.5
44.5
48
49.5
4
6
10
25
46
12
25
44
28
50
80
10%
12%
25%
23%
25%
35%
30%
25%
25%
25%
20%
3.0” x 1.8” x 0.45”
3.0” x 1.8” x 0.45”
4.0” x 1.73” x 0.48”
3.13” x 2.2” x 0.7”
3.0” x 1.8” x 0.45”
3.0” x 1.8” x 0.45”
3.0” x 1.8” x 0.45”
3.0” x 1.8” x 0.45”
2.45” x 2.09” x 0.41”
2.45” x 2.09” x 0.41”
3.2” x 3.2” x 0.49”
AML910P4213
9.9 - 10.7
43
37
38
6
30%
3.0” x 1.8” x 0.45”
AML910P4214
9.9 - 10.7
43
39
40
10
30%
3.6” x 3.4” x 0.67”
AML910P4215
9.9 - 10.7
46
42
43
20
25%
3.6” x 3.4” x 0.67”
AML811P5011
AML811P5012
AML811P5013
AML618P4014
AML618P4015
AML218P4012
AML218P4011
AML218P4013
AML1314P4511
AML1314P4512
AML1416P4511
AML1416P4512
MSC56P5050
MSC56P4544
MSC56P4042
MSC2930P1741
7.8 - 11.0
7.8 - 11.0
7.8 - 11.0
6.0 - 18.0
6.0 - 18.0
2.0 - 18.0
2.0 - 18.0
2.0 - 18.0
13.75 – 14.50
13.75 – 14.50
14.0 – 16.0
14.0 – 16.0
5.0 - 6.0
5.0 - 6.0
5.0 - 6.0
29-30
45
50
50
40
40
35
40
38
45
45
45
45
50
45
40
15
43
45.5
48
39
42
37
39
41
42
44.5
41.5
44
48
42
40
40
44
4.5
49
40
43
38
40
43
43
45
42
44.5
50
44
42
41.5
25
44
80
10
20
6
10
20
20
32
16
27
80
25
16
14
28V, 2.0A
48V, 2.0A
40V, 1.5A
50V, 1.5A
28V, 5.0A
28V, 1.5A
28V, 3.0A
28V, 6 A
28V, 4.0A
28V, 8.0A
28V/12.0A
12V, 0.4A
32V, 0.5A
12V, 0.4A
32V, 0.8A
12V, 1.0 A
32V, 1.3A
28V, 2.8A
28V, 5.5A
28V, 11.5A
32V, 2.8A
32V, 4.9A
32V, 1.5A
32V, 2.8A
32V, 4.9A
30V, 2.3A
30V, 4.6A
35V, 3.2A
35V, 6.2A
30V, 11.0A
30V, 2.8A
30V, 1.8A
28V, 2.2A
30%
23%
25%
12%
12%
13%
12%
12%
20%
19%
20%
18%
30%
30%
30%
23%
2.45” x 2.09” x 0.41”
2.45” x 2.09” x 0.41”
3.2” x 3.2” x 0.49”
1.75” x 1.75” x 0.43”
2.45” x 2.09” x 0.41”
1.75” x 1.75” x 0.43”
1.75” x 1.75” x 0.43”
3.0” x 1.8” x 0.45”
2.45” x 2.09” x 0.41”
2.45” x 2.09” x 0.41”
2.45” x 2.09” x 0.41”
2.45” x 2.09” x 0.41”
3.0” x 1.8” x 0.45”
3.0” x 1.8” x 0.45”
3.0” x 1.8” x 0.45”
2.0” x 3.0” x 0.5”
Model Number
8
RF-Modules-Subsystems-Brochure-v2.indd 8
5/11/15 2:02 PM
Product Line Overview
Multipliers
Microsemi frequency multipliers include a comprehensive line of doublers, triplers,
quadruplers, and higher order multiplication schemes up to N = 80. Narrowband passive
diode-based models provide superior phase noise to within 1 dB of the theoretical limit
of 20 Log N. Active models using FETs or PHEMTs typically have broader bandwidth
and slightly higher phase noise, but allow the multiplier module to also provide gain, if
necessary. Options include operating voltages from +5V to +24V, and DC bias can be
configured for minimal current drain when battery operation is required. Our capability
provides multiplier output frequencies from 4 GHz up to 110 GHz. Depending on desired
filtering and amplification, output power levels can exceed 2 watts.
• 4 to 110 GHz output
frequency capability
• Multiplication factors
from X2 to X80
• Broadband models: octave
plus bandwidth
• Narrowband models:
5 to 20% bandwidth
• Popular output bands (GHz):
18-26.5, 26-40, 40-60
Parameter
Input Frequency
Output Frequency
Input Power
Output Power
Harmonics
DC Supply
Unit
Doubler Active
Tripler
Passive
Quadrupler
Active
GHz
GHz
dBm
dBm
dBc
V/mA
10-20
20–40
+10
+10
-20
+12/240
4.5-5
13.5–15
+15
+1
-20
0/0
6.6-10
26–40
+10
+15
-15
+12/410
Up/Down Converters
Microsemi’s up/down-converter capability spans a wide range of RF & LO frequencies up
through 110 GHz, with IF coverage to 20 GHz. A typical lineup for an integrated downconverter assembly includes an RF chain consisting of a low-noise amplifier (LNA), image
reject filter, a mixer, and an IF output amplifier stage. Similarly, a typical up-converter
lineup begins with an IF pre-amplifier and filter, a mixer, followed by an LO-reject filter and
power amplifier chain on the RF output. Various LO configurations are available, and mixer
options include single-balanced, double-balanced, triple-balanced, image reject, and
sub-harmonic configurations. An optional phase locked source can also be integrated to
provide a self-contained on-board synthesizer for generating the LO signal. The complete
assemblies are housed in a compact hermetic case and configured with either coaxial or
waveguide connectors.
• Up/down-converters to 110 GHz
• IF coverage to 20 GHz
• Super-heterodyne, image/LO reject,
and sub-harmonic topologies
• Up-converter output power to +2W
• Down-converter noise figure
to < 3 dB
Parameter
Unit
Down-converter
Up-converter
RF Start Freq
RF Stop Freq
LO Start Freq
LO Stop Freq
IF Freq
Conversion Gain
Flatness (50 MHz)
Noise Figure
Intercept Point
Input VSWR
Output VSWR
LO Input Power
GHz
GHz
GHz
GHz
GHz
dB
dB
dB
dBm
:1
:1
dBm
21.2
22.4
6.65
7.05
1.25
22
± 0.25
5.5
-7 (input)
1.92
1.75
5
22.4
23.6
6.65
7.05
2.45
29
± 0.25
18
32 (output)
2.0
1.8
8
9
RF-Modules-Subsystems-Brochure-v2.indd 9
5/11/15 2:02 PM
Transceivers
You need a transmitter. You need a receiver. And you need them combined into a highperformance, reliable T/R module solution that makes integration into your overall system
architecture a breeze. We’ve become experts in eliminating cross-talk between transmit and
receive electronics—avoiding noise figure degradation due to digital logic, modulation, and
control signal interference—and suppressing LO leakage that might otherwise weigh down
your transmitter linearity. When you need that extra level of precision and accuracy, Microsemi
will embed digital “smarts” with a micro-controller for automatic adjustment of transceiver
parameters. Transceivers are our business, and they exemplify our dedication to providing
truly superior integrated modules for high-frequency applications. They are delivered to your
exact specifications and come in a variety of form factors.
•
•
•
•
•
•
•
•
•
Frequency capability up through 110 GHz
Integrated transmit, receive, and LO circuitry
Embedded micro-controller enables “adaptive modulation”
LO multiplication factor, XN (N = 1 to 12)
Receiver noise figures to 2 dB
Transmit output power to +2W
Linear or non-linear operation
Low spurious emissions
Environmentally sealed and tested at temperatures from -54°C to +100°C
Multi-Function Assemblies
If you can imagine it—and the laws of physics allow it—we can custom design it for
you. Drawing from our unparalleled circuit library of great depth and breadth, Microsemi
integrates several signal-conditioning functions into a single, efficient, high-performance
Multi-Function Assembly (MFA). Common MFA functions include amplifiers, multipliers,
down converters, filters, equalizers, analog/digital attenuators, detectors and integrated
microcontrollers. These integrated solutions carry cost, size and reliability advantages by
eliminating cables, waveguides and interconnects. From wide dynamic range limiting
amplifier distribution systems to complete RF front-ends, our custom MFA capability
positions Microsemi as a one-stop shop covering all of your RF, microwave and
millimeter-wave requirements.
In addition to unsurpassed design capability, we also provide our customers with build-toprint assembly and test services of their proven MFA designs. Our high-volume business
base enables us to amortize overhead expenses over a large number of units, leverage
our materials purchasing power, and reduce manufacturing costs of your MFAs. Take
advantage of our automation, innovation, and experience by letting us put our contract
manufacturing resources to work for you.
10
RF-Modules-Subsystems-Brochure-v2.indd 10
5/11/15 2:02 PM
Microsemi is continually adding new products to it
industry-leading portfolio.
For the most recent updates to our product line and for detailed
information and specifications, please call, email or visit our website:
Toll-free: 800-713-4113
[email protected]
www.microsemi.com
Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its products and services for any particular purpose, nor does Microsemi assume any liability whatsoever arising out of the application or use of any
product or circuit. The products sold hereunder and any other products sold by Microsemi have been subject to limited testing and should not be used in conjunction with mission-critical equipment or applications. Any performance specifications are believed to be reliable but
are not verified, and Buyer must conduct and complete all performance and other testing of the products, alone and together with, or installed in, any end-products. Buyer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the
Buyer’s responsibility to independently determine suitability of any products and to test and verify the same. The information provided by Microsemi hereunder is provided “as is, where is” and with all faults, and the entire risk associated with such information is entirely with the
Buyer. Microsemi does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other IP rights, whether with regard to such information itself or anything described by such information.Information provided in this document is proprietary to Microsemi, and
Microsemi reserves the right to make any changes to the information in this document or to any products and services at any time without notice.
Microsemi Corporate Headquarters
One Enterprise, Aliso Viejo, CA 92656 USA
Within the USA: +1 (800) 713-4113
Outside the USA: +1 (949) 380-6100
Sales: +1 (949) 380-6136
Fax: +1 (949) 215-4996
email: [email protected]
www.microsemi.com
RF-Modules-Subsystems-Brochure-v2.indd 1
Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for
communications, defense & security, aerospace and industrial markets. Products include high-performance and radiationhardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and
synchronization devices and precise time solutions, setting the world’s standard for time; voice processing devices; RF
solutions; discrete components; security technologies and scalable anti-tamper products; Ethernet solutions; Powerover-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso
Viejo, Calif., and has approximately 3,600 employees globally. Learn more at www.microsemi.com.
©2015 Microsemi Corporation. All rights reserved. Microsemi and the Microsemi logo are registered trademarks of Microsemi Corporation. All other
trademarks and service marks are the property of their respective owners.
RFMS-05-15
5/11/15 2:01 PM