NSS40600CF8 D

NSS40600CF8T1G,
SNSS40600CF8T1G
40 V, 7.0 A, Low VCE(sat)
PNP Transistor
ON Semiconductor’s e2 PowerEdge family of low VCE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
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−40 VOLTS, 7.0 AMPS
PNP LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 45 mW
ChipFET]
CASE 1206A
STYLE 4
COLLECTOR
1, 2, 3, 6, 7, 8
Features
4
BASE
• S Prefix for Automotive and Other Applications Requiring Unique
•
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These are Pb−Free Devices*
5
EMITTER
MARKING DIAGRAM
VA M
G
VA = Specific Device Code
M = Month Code
G = Pb−Free Package
PIN CONNECTIONS
C
8
1
C
C
7
2
C
C
6
3
C
E
5
4
B
ORDERING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
March, 2013 − Rev. 4
1
Device
Package
Shipping†
NSS40600CF8T1G
ChipFET
(Pb−Free)
3,000 /
Tape & Reel
SNSS40600CF8T1G
ChipFET
(Pb−Free)
3,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NSS40600CF8/D
NSS40600CF8T1G, SNSS40600CF8T1G
MAXIMUM RATINGS (TA = 25°C)
Symbol
Max
Unit
Collector-Emitter Voltage
Rating
VCEO
−40
Vdc
Collector-Base Voltage
VCBO
−40
Vdc
Emitter-Base Voltage
VEBO
−7.0
Vdc
IC
−6.0
Adc
Collector Current − Peak
ICM
−7.0
A
Electrostatic Discharge
ESD
Collector Current − Continuous
HBM Class 3B
MM Class C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation, TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Symbol
Max
Unit
PD (Note 1)
830
6.7
mW
mW/°C
RqJA (Note 1)
Total Device Dissipation, TA = 25°C
Derate above 25°C
PD (Note 2)
150
1.4
11.1
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 2)
Thermal Resistance,
Junction−to−Lead #1
RqJL (Note 2)
Total Device Dissipation
(Single Pulse < 10 sec)
PDsingle
(Notes 2 & 3)
2.75
TJ, Tstg
−55 to +150
Junction and Storage Temperature Range
90
15
°C/W
W
mW/°C
°C/W
°C/W
W
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. FR−4 @ 100 mm2, 1 oz copper traces.
2. FR−4 @ 500 mm2, 1 oz copper traces.
3. Thermal response.
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2
NSS40600CF8T1G, SNSS40600CF8T1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typical
Max
−40
−
−
−40
−
−
−7.0
−
−
−
−
−0.1
−
−
−0.1
−
−
−10
250
250
220
180
150
−
−
300
−
−
−
−
−
−
−
−
−
−
−
−
−
0.007
0.045
0.080
0.150
0.180
0.160
−0.010
−0.075
−0.110
−0.200
−0.250
−0.220
−
−
−0.90
−
−
−0.90
100
−
−
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mAdc, IB = 0)
V(BR)CEO
Collector −Base Breakdown Voltage
(IC = −0.1 mAdc, IE = 0)
V(BR)CBO
Emitter−Base Breakdown Voltage
(IE = −0.1 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = −40 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = −7.0 Vdc)
IEBO
Collector Cutoff Current
(VCB = −6.5 Vdc, VBE(off) = 0 Vdc)
ICEO
Vdc
Vdc
Vdc
mAdc
mAdc
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 4)
(IC = −10 mA, IC = −2.0 V)
(IC = −500 mA, VCE = −2.0 V)
(IC = −1.0 A, VCE = −2.0 V)
(IC = −2.0 A, VCE = −2.0 V)
(IC = −3.0 A, VCE = −2.0 V)
hFE
Collector −Emitter Saturation Voltage (Note 4)
(IC = −0.1 A, IB = −0.010 A) (Note 5)
(IC = −1.0 A, IB = −0.100 A)
(IC = −1.0 A, IB = −0.010 A)
(IC = −2.0 A, IB = −0.020 A)
(IC = −3.0 A, IB = −0.030 A)
(IC = −4.0 A, IB = −0.400 A)
VCE(sat)
Base −Emitter Saturation Voltage (Note 4)
(IC = −1.0 A, IB = −0.01 A)
VBE(sat)
Base −Emitter Turn−on Voltage (Note 4)
(IC = −2.0 A, VCE = −3.0 V)
VBE(on)
Cutoff Frequency
(IC = −100 mA, VCE = −5.0 V, f = 100 MHz)
fT
V
V
V
MHz
Input Capacitance (VEB = −0.5 V, f = 1.0 MHz)
Cibo
−
−
650
pF
Output Capacitance (VCB = −3.0 V, f = 1.0 MHz)
Cobo
−
−
150
pF
Delay (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)
td
−
−
120
ns
Rise (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)
tr
−
−
220
ns
Storage (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)
ts
−
−
650
ns
Fall (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)
tf
−
−
240
ns
SWITCHING CHARACTERISTICS
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
5. Guaranteed by design but not tested.
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3
NSS40600CF8T1G, SNSS40600CF8T1G
0.35
IC/IB = 10
VCE(sat), COLLECTOR EMITTER
SATURATION VOLTAGE (V)
VCE(sat), COLLECTOR EMITTER
SATURATION VOLTAGE (V)
0.25
VCE(sat) = 150°C
0.20
0.15
25°C
0.10
−55°C
0.05
0
0.001
0.01
0.1
1.0
IC/IB = 100
0.30
VCE(sat) = 150°C
0.25
0.20
25°C
0.15
−55°C
0.10
0.05
0
10
0.001
IC, COLLECTOR CURRENT (A)
1.2
150°C (5 V)
25°C (2 V)
250
−55°C (5 V)
VBE(on), BASE EMITTER TURN−ON VOLTAGE (V)
−55°C (2 V)
150
50
VBE(sat), BASE EMITTER
SATURATION VOLTAGE (V)
350
0.001
0.01
0.1
1.0
−55°C
0.8
25°C
0.7
0.6
0.5
150°C
0.4
0.1
0.01
1.0
10
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain vs.
Collector Current
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
VCE = −1.0 V
−55°C
25°C
0.7
0.6
0.5
150°C
0.4
0.3
0.2
0.001
0.001
IC, COLLECTOR CURRENT (A)
0.8
0.1
0.9
0.2
10
1.0
0.9
1.0
0.3
VCE, COLLECTOR−EMITTER VOLTAGE (V)
hFE, DC CURRENT GAIN
25°C (5 V)
10
IC/IB = 10
1.1
150°C (2 V)
450
1.0
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
750
550
0.1
IC, COLLECTOR CURRENT (A)
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
650
0.01
0.01
0.1
1.0
10
1.0
100 mA
10 mA
IC = 500 mA
0.8
300 mA
0.6
0.4
0.2
0
0.01
0.1
1.0
10
IC, COLLECTOR CURRENT (A)
IB, BASE CURRENT (mA)
Figure 5. Base Emitter Turn−On Voltage vs.
Collector Current
Figure 6. Saturation Region
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4
100
NSS40600CF8T1G, SNSS40600CF8T1G
225
Cobo, OUTPUT CAPACITANCE (pF)
700
Cibo (pF)
650
600
550
500
450
400
350
300
0
1.0
2.0
3.0
4.0
5.0
Cobo (pF)
200
175
150
125
100
75
50
6.0
0
5.0
10
15
20
25
30
VEB, EMITTER BASE VOLTAGE (V)
VCB, COLLECTOR BASE VOLTAGE (V)
Figure 7. Input Capacitance
Figure 8. Output Capacitance
10
1.0
IC (A)
Cibo, INPUT CAPACITANCE (pF)
750
1.0 mS
10 mS
0.1
100 mS
1.0 S
Thermal
Limit
0.01
0.01
0.1
1.0
10
VCE (Vdc)
Figure 9. Safe Operating Area
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5
100
35
NSS40600CF8T1G, SNSS40600CF8T1G
PACKAGE DIMENSIONS
ChipFETt
CASE 1206A−03
ISSUE K
D
8
7
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE.
4. LEADFRAME TO MOLDED BODY OFFSET IN HORIZONTAL
AND VERTICAL SHALL NOT EXCEED 0.08 MM.
5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE BURRS.
6. NO MOLD FLASH ALLOWED ON THE TOP AND BOTTOM LEAD
SURFACE.
q
6
L
5
HE
5
6
7
8
4
3
2
1
E
1
2
e1
3
e
4
b
DIM
A
b
c
D
E
e
e1
L
HE
q
c
A
0.05 (0.002)
STYLE 4:
PIN 1. COLLECTOR
2. COLLECTOR
3. COLLECTOR
4. BASE
5. EMITTER
6. COLLECTOR
7. COLLECTOR
8. COLLECTOR
MILLIMETERS
NOM
MAX
1.05
1.10
0.30
0.35
0.15
0.20
3.05
3.10
1.65
1.70
0.65 BSC
0.55 BSC
0.28
0.35
0.42
1.80
1.90
2.00
5° NOM
MIN
1.00
0.25
0.10
2.95
1.55
SOLDERING FOOTPRINT*
1
2.032
0.08
8X
8X
0.66
0.026
0.457
0.018
2X
ǒ
mm
inches
Ǔ
2X
0.017
0.079
1.727
0.068
2.362
0.093
0.65
0.025
PITCH
MAX
0.043
0.014
0.008
0.122
0.067
2.032
0.08
1
2.362
0.093
INCHES
NOM
0.041
0.012
0.006
0.120
0.065
0.025 BSC
0.022 BSC
0.011
0.014
0.071
0.075
5° NOM
MIN
0.039
0.010
0.004
0.116
0.061
0.457
0.018
0.66
0.026
Basic Style
mm Ǔ
ǒinches
Style 4
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ChipFET is a trademark of Vishay Siliconix.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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6
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NSS40600CF8/D