VISHAY BAV23C-V

BAV23C-V
Vishay Semiconductors
Small Signal Switching Diode, Dual
Features
• Silicon epitaxial planar diode
• Fast switching dual diode with common
cathode
• These diodes are also available as
single diodes in the same case style of
SOT-23 case with type designation of
BAS21-V, in the SOD-123 case with the
type designation of BAV21W-V, and in
the SOD-323 case with the type designation of
BAV21WS-V
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Mechanical Data
3
1
2
18108
Packaging codes/options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/3K per 7" reel (8 mm tape), 15K/box
Case: SOT-23
Weight: approx. 8.8 mg
Parts Table
Part
BAV23C-V
Ordering code
Marking
Remarks
BAV23C-V-GS18 or BAV23C-V-GS08
KT6
Tape and reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Continuous reverse voltage
Repetitive peak reverse voltage
Symbol
Value
Unit
VR
200
V
VRRM
250
V
Non-repetitive peak forward
current
t = 1 µs
IFSM
9
A
Non-repetitive peak forward
surge current
t=1s
IFSM
0.5
A
Maximum average forward
rectified current
IF(AV)
200 1)
mA
Forward continuous current
IF
400 2)
mA
Repetitive peak forward current
IFRM
625
Power dissipation
Ptot
350
2)
mA
mW
Notes:
1) Measured under pulse conditions; pulse time = t ≤ 0.3 ms
p
2)
Device on fiberglass substrate
Document Number 81902
Rev. 1.1, 12-Aug-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
1
BAV23C-V
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
RthJA
Thermal resistance junction to ambient air
Unit
1)
K/W
357
Tj
150
°C
Tj = Tstg
- 65 to + 150
°C
Junction temperature
Storage temperature range
Value
Note:
1)
Device on fiberglass substrate
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Reverse breakdown voltage
Test condition
Symbol
Min.
IR = 100 µA, tp = 300 µs
V(BR)
250
IF = 100 mA
Max.
Unit
VF
1000
mV
IF = 200 mA
VF
1250
mV
VR = 200 V
IR
100
nA
VR = 200 V, Tj = 150 °C
IR
100
µA
Forward voltage
Reverse current
V
Ω
IF = 10 mA
rf
VR = 0, f = 1 MHz
CD
5
pF
IF = IR = 30 mA, RL = 100 Ω
iR = 3 mA
trr
50
ns
Dynamic forward resistance
Diode capacitance
Reverse recovery time
Typ.
5
Package Dimensions in millimeters (inches): SOT-23
0.9 (0.035)
1.15 (0.045)
o8
°
0.2 (0.008)
0.098 (0.004)
0.175 (0.007)
0.550 ref. (0.022 ref.)
0.1 (0.004) max.
3.1 (0.122)
2.8 (0.110)
0.45 (0.018)
0.35 (0.014)
0.35 (0.014)
0° t
0.5 (0.020)
0.45 (0.018)
0.3 (0.012)
2.6 (0.102)
2.35 (0.093)
0.7 (0.028)
0.95 (0.037)
0.9 (0.035)
1.43 (0.056)
1 (0.039)
0.9 (0.035)
Foot print recommendation:
2 (0.079)
1 (0.039)
0.9 (0.035)
1.20 (0.047)
0.45 (0.018)
0.35 (0.014)
0.95 (0.037)
Document no.: 6.541-5014.01-4
Rev. 8 - Date: 23.Sept.2009
17418
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number 81902
[email protected], [email protected], [email protected]
Rev. 1.1, 12-Aug-10
Legal Disclaimer Notice
www.vishay.com
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Revision: 12-Mar-12
1
Document Number: 91000