Data Sheet

INTEGRATED CIRCUITS
DATA SHEET
TDA1576T
FM/IF amplifier/demodulator circuit
Product specification
Supersedes data of February 1991
File under Integrated Circuits, IC01
1998 Nov 18
Philips Semiconductors
Product specification
FM/IF amplifier/demodulator circuit
TDA1576T
FEATURES
GENERAL DESCRIPTION
• Fully balanced 4-stage limiting IF amplifier
The TDA1576T is a monolithic integrated FM/IF amplifier
circuit for use in mono and stereo FM-receivers of car
radios or home sets.
• Symmetrical quadrature demodulator
• Field strength indication output for 1 mA ammeter
• Detune detector for side response and noise attenuation
• Detune voltage output
• Internal muting circuit
• 0° and 180° AF output signals
• Reference voltage output
• Electronic smoothing of the supply voltage.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VP
supply voltage (pin 1)
7.5
8.5
15
V
IP
supply current
10
16
23
mA
ViIF(rms)
input sensitivity (RMS value)
−3 dB before limiting 14
22
35
µV
S/N = 26 dB
−
10
−
µV
S/N = 46 dB
−
55
−
µV
VoAF(rms)
AF output voltage (RMS value)
60
67
75
mV
THD
total harmonic distortion with double
resonant circuits
−
0.02
−
%
S/N
signal-to-noise ratio
−
72
−
dB
−
50
−
dB
43
48
−
dB
Vi > 1 mV
αAM
AM suppression
RR
ripple rejection
I15
maximum indicator output current
−
−
2
mA
Tamb
operating ambient temperature
−30
−
+80
°C
f = 100 Hz
ORDERING INFORMATION
PACKAGE
TYPE
NUMBER
NAME
TDA1576T
SO20
1998 Nov 18
DESCRIPTION
plastic small outline package; 20 leads; body width 7.5 mm
2
VERSION
SOT163-1
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ViIF
RS
0.1 µF
zero adjustment
of
field strength
indicator
0.1 µF
3.6 kΩ
1 nF
detune
voltage
reference
voltage
0.47 µF
+4.9 V
GND
VFB1
VFB2
ViIF
VF0
VF
Vref
Vo(det)
Vi(det)
n.c.
20
19
18
17
16
15
14
13
12
11
9
10
4-STAGE
LIMITER/
AMPLIFIER
25
kΩ
REFERENCE
VOLTAGE
LEVEL DETECTOR
25
kΩ
Philips Semiconductors
RS
FM/IF amplifier/demodulator circuit
field strength
1 mA
2 V (RMS)
BLOCK DIAGRAM
1998 Nov 18
handbook, full pagewidth
MUTE
ATTENUATOR
3
0.5
mA
TDA1576T
V1
DETUNE
DETECTOR
V2
QUADRATURE
DEMODULATOR
V2
3.7 kΩ
8.3 kΩ
10 Ω
VP
1
2
3
4
5
6
7
8
VP
+8.5 V
CPS
IF1
33 pF
RES1
FMON
RES2
IF2
VoAF1
0.1 µF
47 µF
FM
on
3.7 kΩ
VoAF2
n.c.
MEH139
6.8 nF
33 pF
560 pF
audio
outputs
−VAF
Product specification
Fig.1 Block diagram.
VAF
TDA1576T
QL = 20
fo = 10.7 MHz
Philips Semiconductors
Product specification
FM/IF amplifier/demodulator circuit
TDA1576T
PINNING
SYMBOL PIN
DESCRIPTION
VP
1
positive supply voltage
CPS
2
smoothing capacitor of power supply
IF1
3
IF signal to resonant circuit
RES1
4
resonant circuit input 1
FMON
5
FM-ON, standby switch
RES2
6
resonant circuit input 2
IF2
7
IF signal to resonant circuit
VoAF1
8
AF output voltage 1 (0° phase)
VoAF2
9
AF output voltage 2 (180° phase)
n.c.
10
not connected
RES2 6
IF2 7
n.c.
11
not connected
Vi(det)
12
detune detector input voltage for
external audio reference
Vo(det)
13
detune detector output voltage
Vref
14
reference voltage output
VF
15
level output for field strength
VF0
16
zero adjust voltage for field strength
ViIF
17
FM/IF input signal voltage
VFB2
18
DC feedback 2
VFB1
19
DC feedback 1
GND
20
ground (0 V)
1998 Nov 18
handbook, halfpage
VP 1
20 GND
CPS 2
19 VFB1
IF1 3
18 VFB2
17 ViIF
RES1 4
16 VF0
FMON 5
TDA1576T
15 VF
14 Vref
VoAF1 8
13 Vo(det)
VoAF2 9
12 Vi(det)
n.c. 10
11 n.c.
MEH140
Fig.2 Pin configuration.
4
Philips Semiconductors
Product specification
FM/IF amplifier/demodulator circuit
TDA1576T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VP
supply voltage (pin 1)
0
15
V
V2, 5, 16
voltage on pins 2, 5 and 16
0
VP
V
Ptot
total power dissipation
0
450
mW
Tstg
storage temperature
−55
+150
°C
Tamb
operating ambient temperature
−30
+80
°C
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
1998 Nov 18
PARAMETER
thermal resistance from junction to ambient in free air
5
VALUE
UNIT
85
K/W
Philips Semiconductors
Product specification
FM/IF amplifier/demodulator circuit
TDA1576T
CHARACTERISTICS
VP = 8.5 V; fIF = 10.7 MHz; RS = 60 Ω; fm = 400 Hz with ∆f = ±22.5 kHz; 50 µs de-emphasis (C8-9 = 6.8 nF);
Tamb = 25 °C and measurements taken in Fig.1; unless otherwise specified. The demodulator circuit is adjusted at
minimum second harmonic distortion for ViIF = 1 mV and a deviation ∆f = ±75 kHz.
SYMBOL
PARAMETER
VP
supply voltage (pin 1)
IP
supply current
CONDITIONS
V5 = V9 = V13 = 0
MIN.
TYP.
MAX.
UNIT
7.5
8.5
15
V
10
16
23
mA
Reference voltage
Vref
reference voltage (pin 14)
I14 = −1 mA
−
4.9
−
V
∆Vref
reference voltage dependence on
temperature
∆V 14
---------------------V 14 × ∆T
−
0.3
−
%/K
I14
maximum output current
short-circuit current
4
6
7.5
mA
R14
∆V 14
output resistor -----------∆I 14
I14 < 1.2 mA
−
60
150
Ω
IF amplifier
ViIF(rms)
input sensitivity (RMS value; pin 17)
−3 dB before limiting
14
22
35
µV
R17-18
input resistance
ViIF = 200 mV (RMS)
10
−
−
kΩ
C17-18
input capacitance
ViIF = 200 mV (RMS)
−
5
−
pF
VoIF(p-p)
output voltage at pins 3 and 7
(peak-to-peak value)
Z3, 7 = 10 pF parallel to
1 MΩ
610
680
750
mV
R3-7
output resistance
200
250
300
Ω
Demodulator
R4-6
input resistance
20
30
40
kΩ
C4-6
input capacitance
−
1
2.5
pF
R8, 9
output resistance
2.9
3.7
4.5
kΩ
V8, 9
DC offset voltage on output pins at
V4-6 = 0
V5 > 3 V or V3-7 = 0 or
V13 < 0.3 V
−
0
±100
mV
∆V
------∆ϕ
demodulator efficiency
∆V 8-9
-------------∆ϕ
−
40
−
mV/°
demodulator efficiency dependent on
supply voltage
V 8-9
----------------------------------------∆ϕ ( V P – 3V BE )
−
6.2
−
mV/°
V/V
DC voltage ratio
V8 + V9
------------------2V 2
0.653
0.667
0.680
V/V
∆V
------∆T
dependence on temperature
V8 + V9
∆------------------2V 2
----------------------∆T
−
10−5
−
1/K
1998 Nov 18
6
Philips Semiconductors
Product specification
FM/IF amplifier/demodulator circuit
SYMBOL
TDA1576T
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Field strength output; see Fig.4
V15
output voltage
ViIF = 0
0
0.1
0.25
V
ViIF = 1 mV (RMS)
1.1
1.5
1.9
V
ViIF = 250 mV (RMS)
3.2
3.6
4.1
V
S
control steepness
−
0.85
−
V/dec
R15
output resistance
−
150
200
Ω
∆V
------∆T
dependence on temperature
∆V 15
V iIF = ---------------------∆T × V 15
−
0.3
−
%/K
I15
standby operational cut-off current
V5 ≥ 3 V; V15 = 0 to 5 V
−
−
10
µA
Zero level adjustment
V16
internal bias voltage
−
260
−
mV
R16
input resistance
−
19
−
kΩ
S
control steepness
0.87
1.0
1.2
V/V
−
20
100
nA
6
30
−
MΩ
ViIF = 100 mV;
∆V 15
A = -----------∆V 16
Detuning detector
I12
input bias current
Z12
input impedance
5V
Z 12 = ---------- ; see Fig.5
∆I 12
V 13
--------V 14
output voltage ratio for
∆ϕ = ϕ(V3-7) − ϕ(V4-6) − 90°
V1 = V2 = 7.5 V;
R13-14 = 10 kΩ; pins 9
and 12 short-circuit;
see Fig.6
I13
∆ϕ = 9.2° (43 kHz); Q = 20
V9, 12 = 334 mV
0.45
0.5
0.55
V/V
∆ϕ = 3.5° (16 kHz); Q = 20
V9, 12 = 138 mV
0.75
0.8
0.85
V/V
∆ϕ = 14° (65 kHz); Q = 20
V9, 12 = 501 mV
0.335
0.345
0.355
V/V
maximum output current
V13 = 6 V; see Fig.7
0.4
0.5
0.6
mA
cut-off current
V13 = 2.5 V; V9, 12 = 0
−
−
−100
nA
α = 1 dB
0.11
0.12
0.13
V/V
α = 7.2 dB
0.095
0.1
0.105
V/V
α ≥ 40 dB
−
0.06
−
V/V
−
−
−225
nA
Internal audio attenuation; see Fig.8
V 13
--------V 14
I13
output voltage ratio
input current
1998 Nov 18
α = attenuation factor
V13 ≤ 0.1 V
7
Philips Semiconductors
Product specification
FM/IF amplifier/demodulator circuit
SYMBOL
TDA1576T
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Standby switch; see Fig.9
V5
input voltage for FM on
2.4
2.5
−
V
−
2.9
3
V
V19 = 0.3 V
−
350
−
mV
V5 = 0 to 2 V
−
−
−100
µA
V5 = 3.5 to 15 V
−
−
1
µA
FM on (3.5VBE)
−
7
−
mV/K
FM off (5VBE)
−
10
−
mV/K
proportional to
V1 − 3VBE
80
210
400
mV
5.8
8.3
10.8
kΩ
input voltage for FM off
V 3, 7
----------------------- = 0.9 ;
V 3, 7(max)
linear range
I5
input current
V5
------∆T
temperature dependence
Supply voltage smoothing
V1-2
internal voltage drop
R1-2
internal resistor
OPERATING CHARACTERISTICS
VP = 8.5 V; fIF = 10.7 MHz; RS = 60 Ω; fm = 400 Hz with ∆f = ±22.5 kHz; 50 µs de-emphasis (C8-9 = 6.8 nF);
Tamb = 25 °C and measurements taken in Fig.1; unless otherwise specified. The demodulator circuit is adjusted at
minimum second harmonic distortion with ViIF = 1 mV.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
IF amplifier and demodulator
ViIF(rms)
input sensitivity (RMS value)
−3 dB before limiting
14
22
35
µV
S/N = 26 dB
−
10
−
µV
S/N = 46 dB
−
55
−
µV
60
67
75
mV
VoAF(rms)
AF output voltage (RMS value)
VoN
noise voltage for ViIF = 0 (RMS value;
pins 8 and 9)
RS = 300 Ω;
f = 250 to 15000 Hz
−
900
−
µV
weighted noise voltage
in accordance with
“DIN 45405”
−
2
−
mV
S/N
signal-to-noise ratio (pins 8 and 9)
ViIF = 1 mV (RMS);
see Fig.3
−
72
−
dB
αAM
AM suppression
ViIF = 0.5 to 200 mV;
FM: 70 Hz; ±15 kHz;
AM: 1 kHz; m = 30%
−
50
−
dB
αFM
FM suppression for FM off
ViIF = 500 mV; V5 = 3 V
80
−
−
dB
∆V8, 9
AFC shift in relation to minimum second
harmonic distortion α2H
ViIF = 0.03 to 500 mV
−
25
−
mV
DC offset at second harmonic distortion
operating
−
0
±100
mV
mute or FM off
α3H
distortion for third harmonic
RR
ripple rejection Vripple = 200 mV on VP
1998 Nov 18
f = 100 Hz
8
−
0
±50
mV
−
0.65
−
%
43
48
−
dB
Philips Semiconductors
Product specification
FM/IF amplifier/demodulator circuit
TDA1576T
MEH166
20
handbook, full pagewidth
V8, V9
(dB)
S+N
0
−20
−40
−60
N
−80
10−6
Fig.3
10−5
10−4
10−3
10−2
10−1 V
1
i 17 (rms) (V)
AF output voltage level on pins 8 and 9 as a function of ViIF at VP = 8.5 V; fm = 1 kHz; QL = 20 with
de-emphasis.
MEH143
5
handbook, full pagewidth
V15
(V)
4
3
2
1
0
10−6
10−5
10−4
10−3
10−2
Fig.4 Field strength output (I16 = 0).
1998 Nov 18
9
10−1
ViIF (rms) (V)
1
Philips Semiconductors
Product specification
FM/IF amplifier/demodulator circuit
TDA1576T
MEH144
handbook, halfpage
MEH145
1
handbook, halfpage
I12
V13/V14
Ri
0.5
I12
0
−1.2
V9, 12
−0.8
Fig.5 Detuning input impedance.
0.8
1.2
V9, 12 (V)
MEH147
0
αVo
(dB)
I13
(mA)
−20
0.5
−40
1.2
1
0.5
0
|V9, 12|
−60
−80
0
2
4
V13 (V)
6
Fig.7 Detuning output.
1998 Nov 18
0.4
handbook, halfpage
handbook, halfpage
0
0
Fig.6 Detuning curve.
MEH146
1
−0.4
0
0.1
0.2
V13 /V14
Fig.8 Internal audio attenuation.
10
0.3
Philips Semiconductors
Product specification
FM/IF amplifier/demodulator circuit
TDA1576T
MEH148
2
handbook, halfpage
V3-7
V3-7 (max)
∆V5
1
0
0
1
2
V5 (V)
3
Fig.9 Standby switch.
handbook, full pagewidth
33 pF
3
(1)
39 pF
(1)
4
560
pF
TDA1576T
1 kΩ
L1
560
pF
L2
390 Ω
6
39 pF
7
9
8
MBK240
33 pF
C8-9
VoAF
Adjustment of the demodulator circuit is obtained with an IF signal which is higher than the 3 dB limiting level; L2 should be short-circuited or detuned;
L1 should be adjusted to minimum d2 distortion, and then L2 to minimum d2 distortion.
(1) Coil data: L1 = L2 = 0.38 µH; Qo = 70; coil former KAN (C).
Fig.10 An example of the TDA1576T when using a demodulator with two tuned circuits.
1998 Nov 18
11
Philips Semiconductors
Product specification
FM/IF amplifier/demodulator circuit
TDA1576T
PACKAGE OUTLINE
SO20: plastic small outline package; 20 leads; body width 7.5 mm
SOT163-1
D
E
A
X
c
HE
y
v M A
Z
11
20
Q
A2
A
(A 3)
A1
pin 1 index
θ
Lp
L
1
10
e
bp
detail X
w M
0
5
10 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D (1)
E (1)
e
HE
L
Lp
Q
v
w
y
mm
2.65
0.30
0.10
2.45
2.25
0.25
0.49
0.36
0.32
0.23
13.0
12.6
7.6
7.4
1.27
10.65
10.00
1.4
1.1
0.4
1.1
1.0
0.25
0.25
0.1
0.9
0.4
inches
0.10
0.012 0.096
0.004 0.089
0.01
0.019 0.013
0.014 0.009
0.51
0.49
0.30
0.29
0.050
0.419
0.043
0.055
0.394
0.016
0.043
0.039
0.01
0.01
0.004
0.035
0.016
Z
(1)
θ
8o
0o
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
REFERENCES
OUTLINE
VERSION
IEC
JEDEC
SOT163-1
075E04
MS-013AC
1998 Nov 18
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
95-01-24
97-05-22
12
Philips Semiconductors
Product specification
FM/IF amplifier/demodulator circuit
TDA1576T
• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
SOLDERING
Introduction to soldering surface mount packages
• For packages with leads on two sides and a pitch (e):
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011).
– larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering is not always suitable
for surface mount ICs, or for printed-circuit boards with
high population densities. In these situations reflow
soldering is often used.
– smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
The footprint must incorporate solder thieves at the
downstream end.
• For packages with leads on four sides, the footprint must
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
Reflow soldering
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating, soldering and cooling) vary
between 100 and 200 seconds depending on heating
method.
Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 230 °C.
Manual soldering
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.
Wave soldering
Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.
To overcome these problems the double-wave soldering
method was specifically developed.
If wave soldering is used the following conditions must be
observed for optimal results:
1998 Nov 18
13
Philips Semiconductors
Product specification
FM/IF amplifier/demodulator circuit
TDA1576T
Suitability of surface mount IC packages for wave and reflow soldering methods
SOLDERING METHOD
PACKAGE
REFLOW(1)
WAVE
BGA, SQFP
not suitable
HLQFP, HSQFP, HSOP, SMS
not
PLCC(3),
SO, SOJ
suitable
suitable(2)
suitable
suitable
suitable
LQFP, QFP, TQFP
not recommended(3)(4)
suitable
SSOP, TSSOP, VSO
not recommended(5)
suitable
Notes
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.
2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).
3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Nov 18
14
Philips Semiconductors
Product specification
FM/IF amplifier/demodulator circuit
TDA1576T
NOTES
1998 Nov 18
15
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Tel. +61 2 9805 4455, Fax. +61 2 9805 4466
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Fax. +43 160 101 1210
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 689 211, Fax. +359 2 689 102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America
Czech Republic: see Austria
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,
Tel. +45 32 88 2636, Fax. +45 31 57 0044
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615800, Fax. +358 9 61580920
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 23 53 60, Fax. +49 40 23 536 300
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240
Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
© Philips Electronics N.V. 1998
SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
545102/750/02/pp16
Date of release: 1998 Nov 18
Document order number:
9397 750 04823
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