SC4210A 8-Pin N-FET Linear Regulator Controller POWER MANAGEMENT Description Features The SC4210A linear regulator controller includes all the features required for an extremely low dropout linear regulator that uses an external N-channel MOSFET as the pass transistor. The device can operate from input voltages as low as 1.75V and can provide high current levels, thus providing an efficient linear solution for custom processor voltages, bus termination voltages, and other logic level voltages down to 0.5V. The onboard charge pump creates a gate drive voltage capable of driving an external N-MOSFET which is optimal for low dropout voltage and high efficiency. The wide versatility of this IC allows the user to optimize the setting of both current limit and output voltage for applications beyond or between standard 3-terminal linear regulator ranges. On-board charge pump to drive external N-MOSFET Input voltage as low as 1.75V to 5.5V Duty ratio mode over-current protection Extremely low dropout voltage Low external parts count Output voltages as low as 0.5V MSOP-8 package Applications The 8-pin controller IC features a duty ratio current limit- Telecom and networking cards Industrial applications Wireless infrastructure Set-top boxes Post regulated power supplies ing technique that provides peak transient loading capability while limiting the average power dissipation of the pass transistor during fault conditions. The SC4210A is available in an MSOP-8 surface mount package. Typical Application Circuit R1 0.015 Vin = 3.3V C1 22µF 1 C2 0.01 2 VDD CS CAP CT GND FB 8 7 C3 0.01 C5 0.1 3 4 R2 24k C4 150pF COMP VOUT U1 SC4210A 6 Q1 FDB7030BL 5 Vout = 1.8V @ 6Ap-k R3 39k R4 1.30k C6 0.01 C7opt. 10µF R5 499 Revision: October 26, 2004 1 www.semtech.com SC4210A POWER MANAGEMENT Absolute Maximum Ratings Exceeding the specifications below may result in permanent damage to the device, or device malfunction. Operation outside of the parameters specified in the Electrical Characteristics section is not implied. Exposure to Absolute Maximum rated conditions for extended periods of time may affect device reliability. Parameter Symbol Limits Units CAP, COMP, VOUT -0.3 to +12 V CT, FB, VDD, CS -0.3 to +6 V Junction Temperature Range TJ -40 to +125 °C Storage Temperature Range TSTG -65 to +150 °C Lead Temperature (Soldering) 10 sec TLEAD 300 °C θJ A 207 °C/W Thermal Impedance Junction to Ambient Electrical Characteristics Unless specified: TJ = TA = -40 to 125°C, VDD = 1.8V to 5V, C = 10nF, C T Parameter CAP = 100nF. Symbol Conditions Min Typ Max Units 2.0 2.8 mA 1.728 1.764 V Input Supply Supply Current V D D = 5V Under Voltage Lockout Minimum Voltage to Start Hysteresis 90 mV Reference VREF VDD = 3.3V, TJ = 25°C 495 VDD = 3.3V, TJ = -40°C to +125°C 488 500 505 mV 512 mV Current Sense Comparator Threshold 100 mV Amplifier Threshold 140 mV Input Bias Current 0.5 2004 Semtech Corp. 2 0.8 µA www.semtech.com SC4210A POWER MANAGEMENT Electrical Characteristics Unless specified: TJ = TA = -40 to 125°C, VDD = 1.8V to 5V, C = 10nF, C T Parameter Symbol CAP = 100nF. Conditions Min Typ Max Units CT Charge Current VCT = 1V, VDD = 5V 20 40 60 µA CT Discharge Current VCT = 1V, VDD = 5V 0.8 1.7 3.0 µA Current Fault Timer CT Fault Low Threshold 0.3 V CT Fault High Threshold 1.3 V Fault Duty Cycle 2.8 4 5.2 % Input Bias Current 0.2 0.5 µA Open Loop Gain 66 dB 0.8 mS 2.6 MΩ 5 MHz Error Amplifier Transconductance -10µA to 10µA, VDD = 5V 0.6 Output Impedance Unity Gain Crossover GBW Source Current V D D = 5V 30 55 µA Sink Current V D D = 5V 20 45 µA Peak Output Current VCAP = 10V, VOUT = 1V 0.7 2 mA Average Output Current VOUT = 1V, VDD = 5V 200 330 µA VDD = 4.5V, ICAP = 10µA 8 8.4 V VDD = 4.5V, CS = 0V 8.5 9.4 FET Driver Max Output Voltage Charge Pump CAP Voltage Note: (1) This device is ESD sensitive. Use of standard ESD handling precautions is required. 2004 Semtech Corp. 3 www.semtech.com SC4210A POWER MANAGEMENT Pin Configuration Ordering Information TOP VIEW VDD 1 8 CS CAP 2 7 CT GND 3 6 FB COMP 4 5 VOUT Part Number (1) P ackag e SC4210AIMSTRT(2) MSOP-8 S C 4210A E V B EVALUATION BOARD Notes: (1) Only available in tape and reel packaging. A reel contains 2500 devices. (2) Lead free product. This product is fully WEEE and RoHS compliant. (MSOP-8) Pin Descriptions Pin Pin Name 1 VD D The system input voltage is connected to this point. VDD must be above 1.75V. VDD also acts as one side of the current sense amplifier and comparator. 2 C AP The output of the charge pump circuit. A capacitor is connected between this pin and GND to provide a floating bias voltage for an N-Channel MOSFET gate drive. A minimum of a 0.01µF ceramic capacitor is recommended. CAP can be directly connected to an external regulated source, in which case the external voltage will be the source for driving the N-Channel MOSFET. 3 GND Ground reference for device. 4 COMP The common output of the transconductance error amplifier and current sense amplifier. It is used for compensating the small signal characteristics of the voltage and current loop (when the current sense amplifier is active in over-current mode). Also, it can be utilized as an ON/OFF node; if pulled to GND the circuit will shutdown; if left floating, it will enable normal operation. 5 VOUT This pin directly drives the gate of the external N-MOSFET pass element. The typical output impedance of this pin is 2.5kΩ 6 FB The inverting terminal of the voltage error amplifier; used to feedback the output voltage for comparison with the internal reference voltage. 7 CT The input to the duty cycle timer circuit. A capacitor is connected from this pin to GND, setting the maximum ON time of the over-current protection circuits. 8 CS The negative current sense input signal. This pin should be connected through a low noise path to the low side of the current sense resistor. 2004 Semtech Corp. Pin Function 4 www.semtech.com SC4210A POWER MANAGEMENT Block Diagram Control Loop Block Diagram Figure 1. 2004 Semtech Corp. 5 www.semtech.com SC4210A POWER MANAGEMENT Applications Information Basic Operation ILIM = 140mV ÷ R SENSE Topology The SC4210A incorporates a UVLO rising threshold of 1.73VTYP with 90mV hysteresis. The SC4210A incorporates a charge pump which multiplies the input supply by a factor of approximately three. This charge pump output, or the CAP pin, should be bypassed to GND in order to reduce high frequency ripple – capacitor value isn’t critical. The amplified voltage supplies power to both the output stage of the error amplifier and the bipolar buffer transistor which provides the gate potential to the external N-MOSFET. Stability and Transient Performance The SC4210A topology allows the device to be configured to have both a stable performance across a wide frequency range as well as react quickly to and recover from transients at the output load. Experimental and simulated results have shown that the device performs well under the following setup conditions: The error amplifier is a transconductance type with a transconductance of around 0.8mSTYP. The open loop voltage gain is about 66dB. The output of the E/A is compensated externally through the COMP pin with an RC series network. Rcomp = 24kΩ; Ccomp = 150pF COUT = 10uF, tantalum, ESR = 1-2Ω Rbleed (R3) = 39kΩ VDD = 3.3V VOUT = 1.8V Iout = 100mA to 6A pulses at SR = 0.3A/µs External pass device - FDB7030BL, N-MOSFET The OUT pin is a buffered version of the COMP pin with approximately 2.5kΩ output drive impedance. Overcurrent protection is accomplished by measuring the voltage potential between the input supply, pin VDD, and the connection of the external sense resistor and drain terminal of the external N-MOSFET at pin CS. The measured ripple voltage is 43mVpk-pk or better than 2.5%; see Figure 2. If the potential difference between the CS and VDD exceeds 100mV for a time greater than the value determined by formula (1) below, the device will enter a 4% maximum on-time until the overcurrent condition is removed. T delay = C · 0.3V ÷ 36µA (1), T where CT is the capacitor at the CT pin. The above applies to the initial overcurrent condition, after which if the overcurrent condition remains in effect, the device will repeatedly cycle on and off according to the following formulas: T ON T = C ·1V ÷ 36µA OFF T = C · 1V ÷ 1.6µA T (2) (3) Figure 2. During the Gate on-time, the maximum current the pass device may supply is limited to: 2004 Semtech Corp. 6 www.semtech.com SC4210A POWER MANAGEMENT Applications Information (Cont.) ZL : = Using the above values with a constant 3A load gives 80º PM (phase margin) with a unity gain frequency of 2.4MHz; see Figure 3, simulated in P-Spice. 1 + Re sr s CL Gs : = RL • ZL RL + ZL 1 + Re sr RL s CL Gs : = 1 RL + + Re sr s CL Hs : = The basic analysis yields a two pole, two zero system. However, considering a limited bandwidth of the NPN buffer stage and external N-MOSFET, the system eventually rolls off due to the third pole at very high frequencies (10-20MHz). The low ESR ceramic capacitors push the secondary zero to well above the unity gain frequency, requiring accurate placement of the dominant zero for stability. Figure 3. Compensating the SC4210A can be done by modeling the device in a straight forward fashion using the Control Loop Block Diagram shown in Figure 1. 1 RC s + RC •CC ZC : = s RO : = 0.26 • 107 FS : = To adjust the above values, say for an output capacitor of 1µF ceramic (ESR=1mΩ), the Rcomp initially should be decreased by the same multiple as the output capacitor, i.e. Rcomp = 24kΩ ÷ 10 = 2.4kΩ. Simulated results yield over 90º of PM at a unity gain frequency of 386kHz; see Figure 4. βnpn • R3 0.26 • 107 + βnpn • R3 gm • Ro • Zc Ro + Zc gm : = 0.8 Fs : = (0.26 • 10 7 ) • R5 • FS • GS (R4 + R5) mA V (s Rc • Cc + 1)R3 • βnpn • gm 0.3 • 10 βnpn • R3 • s Cc + 0.26 • 10 7 • s Rc • Cc + βnpn • R3 • s Rc • Cc + 0.26 • 10 7 + βnpn • R3 7 FB : = 2004 Semtech Corp. R5 R 4 + R5 7 www.semtech.com SC4210A POWER MANAGEMENT Applications Information (Cont.) Figure 4. Figure 6. Figure 5 shows the transient response for the circuit described above – the ripple Vpk-pk is almost 60mVpkpk, which is a result of the overdamped system. Figure 7. is an example of how close the actual results can be obtained with the simulation once the correct model has been defined. Below is the P-Spice simulation of the circuit which was built and tested with Ridley instrument; see Figure 6. Figure 5. Figure 7. This circuit can be modified to improve transient performance. This can be achieved by raising Rcomp until the PM decreases to 50-60º at unity gain crossover. This is achieved by raising Rcomp to approximately 5.6kΩ, which gives a PM of 50º at a unity gain of 1MHz; see Figure 6 for the actual circuit Bode plot taken with Ridley Instrument. Again, we achieved a respectable transient response, VOUT_RIPPLE < 50mVpk-pk, less then 3% of the VOUT = 1.8V; see Figure 8. 2004 Semtech Corp. 8 www.semtech.com SC4210A POWER MANAGEMENT Applications Information (Cont.) The pass transistor does add an additional pole to the transfer function. Generally speaking, this parasitic nondominant pole is at frequencies well above the unity gain frequency but should be considered when various types of N-MOSFETs are available. The purpose of the RBLEED is to improve the transient response, reduce overshoot, and to remove an unwanted output ripple voltage if no load is applied to the output. In a practical sense, it is chosen to bleed (drain) about 100µA - 150µA. The optimum value depends on the input/output voltage ratio and the constraints on the output ripple voltage. Simulation analysis and real life circuit testing have shown very close correlation. Following the procedure described above yields a stable operation and excellent transient response over a wide range of output capacitors: extra low-ESR “ceramics” and “organics”, mid-ESR “polymers” and “tantalums”, lowcost aluminum capacitors. Below in Table 1 are the summarized results of choosing RCOMP and CCOMP values for the typical application circuit shown on Page 1. Figure 8. An output capacitor is not required for stability. If one is used, compensation is required. Assuming there is no output cap present, only Ccomp will be used. Under this condition, the non-dominant pole and both zero’s are pushed well above the unity gain frequency. Using only a Ccomp = 100pF without an output capacitor, the system yields a PM of 78.5º with a unity gain frequency of 387kHz; see Figure 9. VOUT_RIPPLE COUT (µF) (mVp-p) ESR (Ω ) RCOMP (K) CCOMP (pF) 32 0.1 0.003 - 0.005 2.7 33 53 1 0.002 - 0.003 2.7 150 50 10 0.001 - 0.002 24 100 45 10 1-5 24 100 46 10 10 - 20 24 100 46 22 5 - 10 24 100 41 33 0.001 - 0.002 82 150 55 0 - 24 100 55 0 - 0 100 Table 1 Test Conditions: Figure 9. 2004 Semtech Corp. VIN = 3.3V, VOUT = 1.8V, IOUT = 6A/0.12A, Sr = 0.3A/µs. 9 www.semtech.com SC4210A POWER MANAGEMENT Evaluation Board Circuit R1 * Vin=1.8 to 6V Vin = 1.8V to +5V C1 ** C2 * 1 C3 0.01 2 VDD CS CAP CT 8 7 C4 0.01 C7 0.1 3 4 C5 * R2 * GND FB COMP VOUT 6 Q1 FDB7030BL 5 R3 * U1 SC4210A C6 * Vout=0.5 to 5V Vout > 0.5V R4 * C8 * C9 0.01 R5 * * Denotes variable components Evaluation Board Layout and Components Placement 2004 Semtech Corp. 10 www.semtech.com SC4210A POWER MANAGEMENT Outline Drawing - MSOP-8 e/2 DIM A A A1 A2 b c D E1 E e L L1 N 01 aaa bbb ccc D N 2X E/2 E1 PIN 1 INDICATOR ccc C 2X N/2 TIPS E 1 2 e B D aaa C A 1.10 0.00 0.15 0.75 0.95 0.22 0.38 0.08 0.23 2.90 3.00 3.10 2.90 3.00 3.10 4.90 BSC 0.65 BSC 0.40 0.60 0.80 (.95) 8 0° 8° 0.10 0.13 0.25 c GAGE PLANE A1 bxN bbb C A-B D C .043 .000 .006 .030 .037 .009 .015 .009 .003 .114 .118 .122 .114 .118 .122 .193 BSC .026 BSC .016 .024 .032 (.037) 8 0° 8° .004 .005 .010 H A2 SEATING PLANE DIMENSIONS MILLIMETERS INCHES MIN NOM MAX MIN NOM MAX 0.25 L DETAIL SEE DETAIL SIDE VIEW 01 (L1) A A NOTES: 1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). 2. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H3. DIMENSIONS "E1" AND "D" DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 4. REFERENCE JEDEC STD MO-187, VARIATION AA. Land Pattern - MSOP-8 X DIM (C) G C G P X Y Z Z Y DIMENSIONS INCHES MILLIMETERS (.161) .098 .026 .016 .063 .224 (4.10) 2.50 0.65 0.40 1.60 5.70 P NOTES: 1. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY. CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR COMPANY'S MANUFACTURING GUIDELINES ARE MET. Contact Information Semtech Corporation Power Management Products Division 200 Flynn Road, Camarillo, CA 93012 Phone: (805)498-2111 FAX (805)498-3804 2004 Semtech Corp. 11 www.semtech.com