NIS5112 Transient Performance

AND8283/D
NIS5112 Transient
Performance
Prepared by: Alan Ball & Ed Mejia
ON Semiconductor
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APPLICATION NOTE
General Description
The NIS5112 is an electronic fuse that incorporates a
number of protection features. These include current
limiting, thermal protection, and overvoltage protection.
This device can replace a fuse/zener combination to add
increased reliability and functionality along with the ability
to reset automatically. A diode/zener network can clamp
both positive and negative spikes on the input line. This
device works differently, but can also accomplish the same
functions. This application note describes the functions of
this chip in this regard.
part will have to be restarted by either recycling the input
power or toggling the enable pin. The auto−retry part will
reapply power to the output as soon as the die temperature
has reached the lower thermal threshold.
The output voltage is filtered from fast rise times on the
input due to the impedance of the electronic fuse coupled
with the load capacitance. This creates a low pass filter,
which is very effective at removing the fast edges of the
transient.
Postitive Transients
There is an internal diode in the NIS5112 from VCC to
ground, that will conduct if the voltage is reversed. Figure 5
shows the forward drop of that diode vs. current. Figure 4
shows the maximum pulse that the diode can conduct before
failure as well as the associated peak voltage for that current
pulse with a 25°C ambient temperature.
Figures 6 & 7 show the test current waveforms and
resulting voltage profile for several pulses. These are at
intermediate current levels and not necessarily the
maximum rated current which is shown in Figure 4.
Negative Transients
Positive transients are limited by the overvoltage circuit.
The positive voltage clamp circuit is not designed to absorb
energy from the transient, but rather to protect the load from
the transient voltage.
This circuit clamps the output by adjusting the
conductivity of the internal FET rather than simply shutting
the part down. This increases reliability by maintaining a
usable output voltage during a positive transient event rather
than shutting down the output and causing a system restart.
The internal amplifier will respond to limit the voltage
excursion to the limit level within a microsecond as can be
seen on the oscilloscope traces. After the settling time of the
amplifier, the maximum voltage during the transient is
defined by the data sheet and is nominally 15.5 volts.
If a transient occurs for a long enough duration of time
such that the die reaches the thermal shutdown point, the part
will shut down. There are two versions of the thermal
protection circuit available. If the latching device is used, the
Test Circuit
The test circuit that was used for the positive transient tests
is shown in Figure 1. The voltage was switched between two
sources with a diode to block the voltage of the 12 volt
source. Waveforms show the input and output voltages of
the chip. Two traces were taken; one with a 10 mF capacitor
on the output and one with a 100 mF capacitor. The voltage
was stepped from 12 to 20 volts.
Source
VCC
NIS5112
Current
Limit
20 V
12.5 V
Enable/
Timer
Gnd
10
10/100 mF
dv/dt
Figure 1. Positive Transient Test Circuit
© Semiconductor Components Industries, LLC, 2007
January, 2007 − Rev. 0
1
Publication Order Number:
AND8283/D
AND8283/D
Input
Input
Output
Output
Figure 2. Pos Transient, 12 V to 20 V, 10 mF cap
Figure 3. Pos Transient, 12 V to 20 V, 100 mF cap
4.0
7.0
Reverse Transient Pulse Data
Ipulse
6.0
Ipulse (A), Vpk (V)
If (A)
3.0
2.0
1.0
5.0
4.0
Vpk
3.0
2.0
1.0
0
0
0
0.5
1.0
1.5
2.0
10
100
1000
10,000
Vf (V)
TIME (ms)
Figure 4. Reverse Transient VI Characteristics.
Pulse Test
Figure 5. Maximum Allowable Reverse Current
Pulse and Associated Peak Voltage
Ch1 High
2.58 A
Ch1 High
4.02 A
Ch2 High
1.69 V
Ch2 High
2.34 V
Figure 6. 2.6 A Pulse Waveforms
Figure 7. 4.0 A Pulse Waveforms
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