Complementary Power Transistors

MJL0281A (NPN)
MJL0302A (PNP)
Preferred Devices
Complementary NPN−PNP
Power Bipolar Transistors
These complementary devices are lower power versions of the
popular MJL3281A and MJL1302A audio output transistors. With
superior gain linearity and safe operating area performance, these
transistors are ideal for high fidelity audio amplifier output stages and
other linear applications.
Features
•
•
•
•
•
•
Exceptional Safe Operating Area
NPN/PNP Gain Matching within 10% from 50 mA to 3.0 A
Excellent Gain Linearity
High BVCEO
High Frequency
Pb−Free Packages are Available*
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15 AMPERES
COMPLEMENTARY SILICON
POWER TRANSISTORS
260 VOLTS − 180 WATTS
TO−264
CASE 340G
STYLE 2
Benefits
•
•
•
•
•
Reliable Performance at Higher Powers
Symmetrical Characteristics in Complementary Configurations
Accurate Reproduction of Input Signal
Greater Dynamic Range
High Amplifier Bandwith
MARKING DIAGRAM
Applications
MJL0xxxA
AYYWWG
• High−End Consumer Audio Products
•
♦
♦
Home Amplifiers
Home Receivers
Professional Audio Amplifiers
♦ Theater and Stadium Sound Systems
♦ Public Address Systems (PAs)
2 COLLECTOR
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
260
Vdc
Collector−Base Voltage
VCBO
260
Vdc
Emitter−Base Voltage
VEBO
5.0
Vdc
Collector−Emitter Voltage − 1.5 V
VCEX
260
Vdc
IC
15
30
Adc
Base Current − Continuous
IB
1.5
Adc
Total Power Dissipation @ TC = 25°C
PD
180
Watts
TJ, Tstg
− 65 to +150
°C
Collector Current − Continuous
Collector Current − Peak (Note 1)
Operating and Storage Junction
Temperature Range
3 EMITTER
1 BASE
MJL0xxxA = Device Code
xxx = 281 or 302
A
= Location Code
YY
= Year
WW
= Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Device
MJL0281A
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle < 10%.
MJL0281AG
MJL0302A
MJL0302AG
Package
Shipping
TO−264
25 Units/Rail
TO−264
(Pb−Free)
25 Units/Rail
TO−264
25 Units/Rail
TO−264
(Pb−Free)
25 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
June, 2006 − Rev. 1
1
Publication Order Number:
MJL0281A/D
MJL0281A (NPN) MJL0302A (PNP)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Symbol
Value
Unit
RqJC
0.69
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
VCEO(sus)
260
−
V
Collector Cutoff Current
(VCB = 260 V, IE = 0)
ICBO
−
10
mA
Emitter Cutoff Current
(VEB = 5.0 V, IC = 0)
IEBO
−
5.0
mA
75
75
75
150
150
150
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 30 mA, IB = 0)
ON CHARACTERISTICS
hFE
DC Current Gain
(IC = 0.5 A, VCE = 5.0 V)
(IC = 1.0 A, VCE = 5.0 V)
(IC = 3.0 A, VCE = 5.0 V)
−
Collector−Emitter Saturation Voltage
(IC = 5.0 A, IB = 0.5 A)
VCE(sat)
−
1.0
V
Base−Emitter On Voltage
(IC = 5.0 A, VCE = 5.0 V)
VBE(on)
−
1.2
V
fT
30
−
MHz
Cob
−
400
pF
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 1.0 A, VCE = 5.0 V, ftest = 1.0 MHz)
Output Capacitance
(VCB = 10 V, IE = 0, ftest = 1.0 MHz)
100
180
IC, COLLECTOR CURRENT (A)
PD, POWER DISSIPATION (W)
200
160
140
120
100
80
60
40
20
0
1.0 ms
10
5.0 ms
10 ms
100 ms
1
DC
0.1
0.01
0
20
40
60
80
100
120
140
1
160
TC, CASE TEMPERATURE (°C)
10
100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Power Derating
Figure 2. Safe Operating Area
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2
1000
MJL0281A (NPN) MJL0302A (PNP)
500
500
hFE, DC CURRENT GAIN
VCE = 5.0 V
100°C
100
−25°C
25°C
10
0.05 0.1
1
10
VBE(on), BASE−EMITTER VOLTAGE (V)
−25°C
25°C
1
10
IC, COLLECTOR CURRENT (A)
Figure 3. MJL0281A DC Current Gain
Figure 4. MJL0302A DC Current Gain
VCE = 5.0 V
1.2
1
−25°C
0.8
25°C
100°C
0.4
0.2
0
0.01
0.1
1
10
100
50
2.4
VCE = 5.0 V
1.9
1.4
0.9
−25°C
100°C
0.4
25°C
−0.1
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 5. MJL0281A Base−Emitter Voltage
Figure 6. MJL0302A Base−Emitter Voltage
100
10
10
IC/IB= 10
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
100
IC, COLLECTOR CURRENT (A)
1.4
0.6
100°C
10
0.05 0.1
50
VBE(on), BASE−EMITTER VOLTAGE (V)
hFE, DC CURRENT GAIN
VCE = 5.0 V
1
100°C
25°C
0.1
0.01
0.01
−25°C
0.1
1
10
100
IC/IB= 10
1
100°C
0.1
0.01
0.01
25°C
−25°C
IC, COLLECTOR CURRENT (A)
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 7. MJL0281A Saturation Voltage
Figure 8. MJL0302A Saturation Voltage
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3
100
MJL0281A (NPN) MJL0302A (PNP)
70
VCE= 5.0 V
fT, CURRENT GAIN BANDWIDTH
PRODUCT (MHz)
fT, CURRENT GAIN BANDWIDTH
PRODUCT (MHz)
60
50
40
30
20
25°C
10
0
0.01
0.1
1
10
60
VCE= 5.0 V
50
40
30
20
25°C
10
0
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 9. MJL0281A Current Gain Bandwidth
Product
Figure 10. MJL0302A Current Gain Bandwidth
Product
http://onsemi.com
4
MJL0281A (NPN) MJL0302A (PNP)
PACKAGE DIMENSIONS
TO−3BPL (TO−264)
CASE 340G−02
ISSUE J
Q
0.25 (0.010)
−B−
M
T B
M
−T−
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
C
E
U
N
A
1
R
2
L
3
P
K
W
F 2 PL
G
J
H
D 3 PL
0.25 (0.010)
M
T B
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
R
U
W
MILLIMETERS
MIN
MAX
28.0
29.0
19.3
20.3
4.7
5.3
0.93
1.48
1.9
2.1
2.2
2.4
5.45 BSC
2.6
3.0
0.43
0.78
17.6
18.8
11.2 REF
4.35 REF
2.2
2.6
3.1
3.5
2.25 REF
6.3 REF
2.8
3.2
INCHES
MIN
MAX
1.102
1.142
0.760
0.800
0.185
0.209
0.037
0.058
0.075
0.083
0.087
0.102
0.215 BSC
0.102
0.118
0.017
0.031
0.693
0.740
0.411 REF
0.172 REF
0.087
0.102
0.122
0.137
0.089 REF
0.248 REF
0.110
0.125
STYLE 2:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
S
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ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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For additional information, please contact your local
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MJL0281A/D
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