Complementary Silicon Power Transistors

MJ15020 − NPN
MJ15021 − PNP
Preferred Devices
Complementary Silicon
Power Transistors
These transistors are designed for use as high frequency drivers in
Audio Amplifiers.
Features
•
•
•
•
http://onsemi.com
4.0 AMPERES
COMPLEMENTARY SILICONPOWER TRANSISTORS
200 − 250 VOLTS, 150 WATTS
High Gain Complementary Silicon Power Transistors
Safe Operating Area 100% Tested 50 V, 3.0 A, 1.0 Sec
Excellent Frequency Response −fT = 20 MHz min
Pb−Free Packages are Available*
MAXIMUM RATINGS
Symbol
MJ15020
MJ15021
Unit
Collector−Emitter Voltage
VCEO
250
Vdc
Collector−Base Voltage
VCBO
250
Vdc
Emitter−Base Voltage
VEBO
7.0
Vdc
Collector Current − Continuous
IC
4.0
Adc
Base Current − Continuous
IB
2.0
Adc
Emitter Current − Continuous
IE
6.0
Adc
Total Device Dissipation @ TC = 25_C
Derate above 25_C
PD
150
0.86
W
W/_C
TJ, Tstg
−65 to +200
_C
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
1.17
_C/W
Rating
Operating and Storage Junction
Temperature Range
TO−204AA (TO−3)
CASE 1−07
STYLE 1
MARKING DIAGRAM
MJ1502xG
AYWW
MEX
THERMAL CHARACTERISTICS
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MJ1502x = Device Code
x = 0 or 1
G
= Pb−Free Package
A
= Assembly Location
Y
= Year
WW
= Work Week
MEX
= Country of Origin
ORDERING INFORMATION
Device
Package
Shipping
MJ15020
TO−204
100 Units / Tray
TO−204
(Pb−Free)
100 Units / Tray
TO−204
100 Units / Tray
TO−204
(Pb−Free)
100 Units / Tray
MJ15020G
MJ15021
MJ15021G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 2
1
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MJ15020/D
MJ15020 − NPN
MJ15021 − PNP
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
250
−
ICEO
−
500
mAdc
IEBO
−
500
mAdc
3.0
−
30
10
−
−
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 100 mAdc, IB = 0)
MJ15020, MJ15021
Collector Cutoff Current (VCE = 200 Vdc, IB = 0)
MJ15020, MJ15021
VCEO(sus)
Emitter Cutoff Current (VEB = 7.0 Vdc, IC = 0)
Vdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward−Biased
(VCE = 50 Vdc, t = 0.5 s (non−repetitive)
IS/b
Adc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 1.0 Adc, VCE = 4.0 V)
(IC = 3.0 Adc, VCE = 4.0 V)
hFE
−
Collector−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.1 Adc)
VCE(sat)
−
1.0
Vdc
Base−Emitter on Voltage (IC = 1.0 Adc, VCE = 4.0 Vdc)
VBE(on)
−
2.0
Vdc
fT
20
−
MHz
Cob
−
500
pF
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, ftest = 1.0 MHz)
Output Capacitance (VCB = 10 Vdc, IE = 0, Ftest = 1.0 MHz)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%
POWER DERATING FACTOR (%)
100
SECOND BREAKDOWN
DERATING
80
60
THERMAL DERATING
40
20
0
0
25
50
125
100
150
75
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
http://onsemi.com
2
175
200
MJ15020 − NPN
MJ15021 − PNP
TYPICAL DYNAMIC CHARACTERISTICS
hFE, DC CURRENT GAIN
200
100
70
50
NPN
30
20
PNP
10
7.0
5.0
3.0
2.0
0.1
TJ = 25°C
VCE = 4.0 Vdc
0.2 0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMPS)
5.0 7.0
10
IC, COLLECTOR CURRENT (AMPS)
Figure 2. DC Current Gain
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
TC = 25°C
WIRE BOND LIMIT
THERMAL LIMIT
SECOND BREAKDOWN
LIMIT
MJ15020/21
0.01
5.0 7.0 10
20 30
200 300
50 70 100
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 3. Maximum Rated Forward Biased
Safe Operating Area
http://onsemi.com
3
500
MJ15020 − NPN
MJ15021 − PNP
PACKAGE DIMENSIONS
TO−204 (TO−3)
CASE 1−07
ISSUE Z
A
N
C
E
D
−T−
U
SEATING
PLANE
K
2 PL
0.13 (0.005)
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO−204AA OUTLINE SHALL APPLY.
T Q
M
M
Y
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
M
−Y−
L
2
H
G
B
M
T Y
1
−Q−
0.13 (0.005)
M
INCHES
MIN
MAX
1.550 REF
−−−
1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
−−−
0.830
0.151
0.165
1.187 BSC
0.131
0.188
MILLIMETERS
MIN
MAX
39.37 REF
−−−
26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
−−−
21.08
3.84
4.19
30.15 BSC
3.33
4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MJ15020/D
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