Complementary ThermalTrak Transistors

NJL21193DG (PNP),
NJL21194DG (NPN)
Complementary
ThermalTrak™ Transistors
The ThermalTrak family of devices has been designed to eliminate
thermal equilibrium lag time and bias trimming in audio amplifier
applications. They can also be used in other applications as transistor
die protection devices.
Features
•
•
•
•
•
Thermally Matched Bias Diode
Instant Thermal Bias Tracking
Absolute Thermal Integrity
Medium Frequency Device with Extended Safe Operating Area
These are Pb−Free Devices
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BIPOLAR POWER
TRANSISTORS
16 A, 250 V, 200 W
Benefits
• Eliminates Thermal Equilibrium Lag Time and Bias Trimming
• Superior Sound Quality Through Improved Dynamic Temperature
•
•
•
Response
Significantly Improved Bias Stability
Simplified Assembly
♦ Reduced Labor Costs
♦ Reduced Component Count
High Reliability
TO−264, 5 LEAD
CASE 340AA
STYLE 1
MARKING DIAGRAM
SCHEMATIC
Applications
• High−End Consumer Audio Products
NJLxxxxDG
AYYWW
ThermalTrak
♦
•
Home Amplifiers
♦ Home Receivers
Professional Audio Amplifiers
♦ Theater and Stadium Sound Systems
♦ Public Address Systems (PAs)
xxxx
G
A
YY
WW
= Specific Device Code
= Pb−Free Device
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 0
1
Publication Order Number:
NJL21193/D
NJL21193DG (PNP), NJL21194DG (NPN)
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
250
Vdc
Collector−Base Voltage
VCBO
400
Vdc
Emitter−Base Voltage
VEBO
5
Vdc
VCEX
400
Vdc
IC
16
30
Adc
Base Current − Continuous
IB
5.0
Adc
Total Power Dissipation @ TC = 25°C
Derate Above 25°C
PD
200
1.43
W
W/°C
TJ, Tstg
− 65 to +150
°C
VR
200
V
IF(AV)
1.0
A
Collector−Emitter Voltage − 1.5 V
Collector Current
− Continuous
− Peak (Note 1)
Operating and Storage Junction Temperature Range
DC Blocking Voltage
Average Rectified Forward Current
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Symbol
Max
Unit
RqJC
0.625
°C/W
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
ATTRIBUTES
Characteristic
ESD Protection
Value
Human Body Model
Machine Model
Flammability Rating
>8000 V
> 400 V
UL 94 V−0 @ 0.125 in
ORDERING INFORMATION
Package
Shipping
NJL21193DG
Device
TO−264
(Pb−Free)
25 Units / Rail
NJL21194DG
TO−264
(Pb−Free)
25 Units / Rail
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2
NJL21193DG (PNP), NJL21194DG (NPN)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
VCEO(sus)
250
−
Vdc
Collector Cutoff Current (VCE = 200 Vdc, IB = 0)
ICEO
−
100
mAdc
Emitter Cutoff Current (VCE = 5 Vdc, IC = 0)
IEBO
−
100
mAdc
Collector Cutoff Current (VCE = 250 Vdc, VBE(off) = 1.5 Vdc)
ICEX
−
100
mAdc
4.0
2.25
−
−
25
8
75
−
−
2.2
−
−
1.4
4
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0)
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (non−repetitive)
(VCE = 80 Vdc, t = 1 s (non−repetitive)
IS/b
Adc
ON CHARACTERISTICS
DC Current Gain
(IC = 8 Adc, VCE = 5 Vdc)
(IC = 16 Adc, IB = 5 Adc)
hFE
Base−Emitter On Voltage (IC = 8 Adc, VCE = 5 Vdc)
VBE(on)
Collector−Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
(IC = 16 Adc, IB = 3.2 Adc)
VCE(sat)
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output
VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS
(Matched pair hFE = 50 @ 5 A/5 V)
THD
%
hFE
unmatched
hFE
matched
Current Gain Bandwidth Product
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
−
−
−
−
fT
4
−
MHz
Cob
−
500
pF
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 1.0 A, TJ = 25°C)
(iF = 1.0 A, TJ = 150°C)
vF
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 150°C)
iR
Maximum Reverse Recovery Time
(iF = 1.0 A, di/dt = 50 A/ms)
trr
V
1.1
0.93
mA
10
100
100
ns
2. Diode Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.
6.0
5.5
NPN NJL21194
f,
T CURRENT GAIN BANDWIDTH PRODUCT (MHz)
f,
T CURRENT GAIN BANDWIDTH PRODUCT (MHz)
PNP NJL21193
6.5
VCE = 10 V
5V
5.0
4.5
4.0
3.5
3.0
0.1
TJ = 25°C
ftest = 1 MHz
1.0
10
8.0
7.0
10 V
6.0
5.0
VCE = 5 V
4.0
3.0
2.0
1.0
0
0.1
IC COLLECTOR CURRENT (AMPS)
TJ = 25°C
ftest = 1 MHz
1.0
10
IC COLLECTOR CURRENT (AMPS)
Figure 2. Typical Current Gain Bandwidth Product
Figure 1. Typical Current Gain Bandwidth Product
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3
NJL21193DG (PNP), NJL21194DG (NPN)
TYPICAL CHARACTERISTICS
PNP NJL21193
NPN NJL21194
1000
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
1000
TJ = 100°C
25°C
100
−25 °C
TJ = 100°C
25°C
100
−25 °C
VCE = 20 V
10
0.1
VCE = 20 V
1.0
10
IC COLLECTOR CURRENT (AMPS)
10
0.1
100
Figure 4. DC Current Gain, VCE = 20 V
PNP NJL21193
NPN NJL21194
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
1000
TJ = 100°C
25°C
100
−25 °C
TJ = 100°C
25°C
100
−25 °C
VCE = 5 V
10
0.1
VCE = 20 V
1.0
10
IC COLLECTOR CURRENT (AMPS)
10
0.1
100
1.0
10
IC COLLECTOR CURRENT (AMPS)
100
Figure 5. DC Current Gain, VCE = 5 V
Figure 6. DC Current Gain, VCE = 5 V
PNP NJL21193
NPN NJL21194
30
35
1.5 A
25
20
IB = 2 A
I C, COLLECTOR CURRENT (A)
I C, COLLECTOR CURRENT (A)
100
Figure 3. DC Current Gain, VCE = 20 V
1000
1A
15
0.5 A
10
5.0
IB = 2 A
30
1.5 A
25
1A
20
0.5 A
15
10
5.0
TJ = 25°C
0
1.0
10
IC COLLECTOR CURRENT (AMPS)
0
5.0
10
15
20
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
TJ = 25°C
0
25
0
Figure 7. Typical Output Characteristics
5.0
10
15
20
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 8. Typical Output Characteristics
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4
25
NJL21193DG (PNP), NJL21194DG (NPN)
TYPICAL CHARACTERISTICS
PNP NJL21193
NPN NJL21194
TJ = 25°C
IC/IB = 10
2.0
1.5
1.0
VBE(sat)
0.5
VCE(sat)
0
0.1
VBE(on) , BASE−EMITTER VOLTAGE (VOLTS)
SATURATION VOLTAGE (VOLTS)
2.5
1.4
1.0
10
IC, COLLECTOR CURRENT (AMPS)
100
1.0
VBE(sat)
0.8
0.6
0.4
0.2
VCE(sat)
1.0
10
IC, COLLECTOR CURRENT (AMPS)
Figure 10. Typical Saturation Voltages
PNP NJL21193
NPN NJL21194
TJ = 25°C
0.1
0.1
TJ = 25°C
IC/IB = 10
Figure 9. Typical Saturation Voltages
10
1.0
1.2
0
0.1
VBE(on) , BASE−EMITTER VOLTAGE (VOLTS)
SATURATION VOLTAGE (VOLTS)
3.0
VCE = 20 V (SOLID)
1.0
VCE = 5 V (DASHED)
10
100
10
TJ = 25°C
VCE = 20 V (SOLID)
1.0
0.1
0.1
VCE = 5 V (DASHED)
1.0
10
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 11. Typical Base−Emitter Voltage
Figure 12. Typical Base−Emitter Voltage
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5
100
100
NJL21193DG (PNP), NJL21194DG (NPN)
10
TJ = 100°C
1
IF, FORWARD CURRENT (A)
IR, REVERSE CURRENT (mA)
10
0.1
TJ = 25°C
0.01
TJ = −25°C
0.001
0.0001
0
20
40
60
80
1
0.1
100°C
0.001
0.3
100 120 140 160 180 200
25°C
−25°C
0.01
VR, REVERSE VOLTAGE (VOLTS)
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
VF, VOLTAGE (VOLTS)
Figure 13. Typical Reverse Current
Figure 14. Typical Forward Voltage
IC, COLLECTOR CURRENT (AMPS)
100
1 SEC
10
1.0
0.1
1.0
10
100
1000
There are two limitations on the power handling ability of
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 15 is based on TJ(pk) = 150°C; TC is variable depending on conditions. At high case temperatures,
thermal limitations will reduce the power than can be handled
to values less than the limitations imposed by second breakdown.
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 15. Active Region Safe Operating Area
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6
NJL21193DG (PNP), NJL21194DG (NPN)
10000
10000
TC = 25°C
C, CAPACITANCE (pF)
Cib
1000
Cob
100
0.1
1.0
10
100
0.1
100
Cib
1000
f(test) = 1 MHz)
Cob
f(test) = 1 MHz)
1.0
10
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 16. NJL21193 Typical Capacitance
Figure 17. NJL21194 Typical Capacitance
1.2
1.1
T , TOTAL HARMONIC
HD
DISTORTION (%)
C, CAPACITANCE (pF)
TC = 25°C
1.0
0.9
0.8
0.7
0.6
10
100
1000
10000
100000
FREQUENCY (Hz)
Figure 18. Typical Total Harmonic Distortion
+50 V
AUDIO PRECISION
MODEL ONE PLUS
TOTAL HARMONIC
DISTORTION
ANALYZER
SOURCE
AMPLIFIER
50 W
DUT
0.5 W
0.5 W
DUT
−50 V
Figure 19. Total Harmonic Distortion Test Circuit
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7
8.0 W
100
NJL21193DG (PNP), NJL21194DG (NPN)
PACKAGE DIMENSIONS
TO−264, 5 LEAD
CASE 340AA−01
ISSUE O
−T−
Q
−B−
Y
0.25 (0.010)
M
T B
C
M
E
U
N
A
R
W
L
1
2
3 4
5
P
K
M
J
H
G
D 5 PL
F 5 PL
0.25 (0.010)
M
T B
S
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS
INCHES
DIM MIN
NOM MAX
MIN
NOM MAX
A 25.857 25.984 26.111 1.018 1.023 1.028
B 19.761 19.888 20.015 0.778 0.783 0.788
C
4.928 5.055 5.182 0.194 0.199 0.204
0.0480 BSC
D
1.219 BSC
E
2.032 2.108 2.184 0.0800 0.0830 0.0860
1.981 BSC
0.0780 BSC
F
0.150 BSC
G
3.81 BSC
0.1050
0.1070 0.1090
H
2.667 2.718 2.769
0.0230 BSC
J
0.584 BSC
K 20.422 20.549 20.676 0.804 0.809 0.814
0.444 REF
L
11.28 REF
−−−
0 _ −−−
7_
0_
7_
M
0.180 REF
N
4.57 REF
P
2.259 2.386 2.513 0.0889 0.0939 0.0989
0.1370 BSC
Q
3.480 BSC
0.100 REF
R
2.54 REF
−−−
S
0 _ −−−
8_
0_
8_
0.243 REF
U
6.17 REF
−−−
0 _ −−−
6_
0_
6_
W
0.0940 BSC
Y
2.388 BSC
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
4. ANODE
5. CATHODE
W
S
ThermalTrak is a trademark of Semiconductor Components Industries, LLC (SCILLC).
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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For additional information, please contact your
local Sales Representative.
NJL21193/D
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