Darlington Transistor NPN

BC372, BC373
High Voltage
Darlington Transistors
NPN Silicon
http://onsemi.com
Features
• Pb−Free Packages are Available*
COLLECTOR 3
BASE
2
MAXIMUM RATINGS
Rating
Symbol
Collector −Emitter Voltage
Value
Unit
VCEO
BC372
BC373
Collector −Base Voltage
VCES
BC372
BC373
Emitter−Base Voltage
Vdc
100
80
VEBO
12
Vdc
Collector Current − Continuous
IC
1.0
Adc
Total Power Dissipation @ TA = 25°C
Derate above TA = 25°C
PD
625
5.0
mW
mW/°C
Total Power Dissipation @ TA = 25°C
Derate above TA = 25°C
PD
1.5
12
W
mW/°C
TJ, Tstg
−55 to +150
°C
Operating and Storage Junction
Temperature Range
EMITTER 1
Vdc
100
80
TO−92
CASE 29
STYLE 1
1
12
3
STRAIGHT LEAD
BULK PACK
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
200
°C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3
°C/W
BC
37x
AYWW G
G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
x
= 2 or 3
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
BC372G
BC373RL1
BC373RL1G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 4
1
Package
Shipping†
TO−92
(Pb−Free)
5000 Units / Bulk
TO−92
2000 / Tape & Reel
TO−92
(Pb−Free)
2000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
BC372/D
BC372, BC373
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
100
80
−
−
−
−
100
80
−
−
−
−
12
−
−
−
−
−
−
100
100
−
−
100
8.0
10
−
−
−
160
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage(1)
(IC = 100 mAdc, IB = 0)
V(BR)CES
BC372
BC373
Collector −Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
Vdc
V(BR)CBO
BC372
BC373
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 80 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0)
Vdc
ICBO
BC372
BC373
Emitter Cutoff Current
(VEB = 10 V, IC = 0)
IEBO
Vdc
nAdc
nAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 250 mAdc, VCE = 5.0 Vdc)
(IC = 100 mAdc, VCE = 5.0 Vdc)
hFE
K
Collector −Emitter Saturation Voltage
(IC = 250 mAdc, IB = 0.25 mAdc)
VCE(sat)
−
1.0
1.1
Vdc
Base −Emitter Saturation Voltage
(IC = 250 mAdc, IB = 0.25 mAdc)
VBE(sat)
−
1.4
2.0
Vdc
fT
100
200
−
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
−
10
25
pF
Noise Figure
(IC = 1.0 mAdc, VCE = 5.0 Vdc, Rg = 100 kW, f = 1.0 kHz)
NF
−
2.0
−
dB
DYNAMIC CHARACTERISTICS
Current−Gain Bandwidth Product
(IC = 100 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
http://onsemi.com
2
BC372, BC373
100 K
1.6
VCE = 5 V
1.2
25°C
VOLTAGE (V)
hFE, DC CURRENT GAIN
TA = 125°C
−55°C
10 K
VBE(sat) @ IC/IB = 100
1.4
VBE(on) @ VCE = 5 V
1
0.8
VCE(sat) @ IC/IB = 100
0.6
0.4
0.2
1K
1
10
100
IC, COLLECTOR CURRENT (mA)
0
1000
5
1000
500
100
VCE = 5 V
TJ = 25°C
100
10
0.6 1
100
IC, COLLECTOR CURRENT (mA)
Figure 2. “Saturation” and “On” Voltages
C, CAPACITANCE (pF)
f,
T CURRENT−GAIN BANDWIDTH PRODUCT (MHz)
Figure 1. DC Current Gain
10
10
100
IC, COLLECTOR CURRENT (mA)
Cib
10
1
0.1
600
Figure 3. Current−Gain — Bandwidth Product
Cob
10
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitances
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3
100
BC372, BC373
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
A
B
STRAIGHT LEAD
BULK PACK
R
P
L
SEATING
PLANE
K
D
X X
G
J
H
V
C
SECTION X−X
1
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
−−−
0.250
−−−
0.080
0.105
−−−
0.100
0.115
−−−
0.135
−−−
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
2.93
−−−
3.43
−−−
N
A
R
BENT LEAD
TAPE & REEL
AMMO PACK
B
P
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
T
SEATING
PLANE
K
D
X X
G
J
V
1
C
SECTION X−X
DIM
A
B
C
D
G
J
K
N
P
R
V
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.40
0.54
2.40
2.80
0.39
0.50
12.70
−−−
2.04
2.66
1.50
4.00
2.93
−−−
3.43
−−−
N
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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4
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
BC372/D
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