2N6426, 2N6427 2N6426 is a Preferred Device Darlington Transistors NPN Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 40 Vdc Collector − Base Voltage VCBO 40 Vdc Emitter − Base Voltage VEBO 12 Vdc Collector Current − Continuous IC 500 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 W mW/°C TJ, Tstg −55 to +150 °C Operating and Storage Junction Temperature Range BASE 2 EMITTER 1 TO−92 CASE 29 STYLE 1 1 12 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 3 STRAIGHT LEAD BULK PACK 2 3 BENT LEAD TAPE & REEL AMMO PACK MARKING DIAGRAM 2N 642x AYWW G G x = 6 or 7 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 March, 2007 − Rev. 3 1 Preferred devices are recommended choices for future use and best overall value. Publication Order Number: 2N6426/D 2N6426, 2N6427 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector −Emitter Breakdown Voltage, (Note 1) (IC = 10 mAdc, VBE = 0) V(BR)CEO 40 − − Vdc Collector −Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO 40 − − Vdc Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 12 − − Vdc Collector Cutoff Current (VCE = 25 Vdc, IB = 0) ICES − − 1.0 mAdc Collector Cutoff Current (VCB= 30 Vdc, IE = 0) ICBO − − 50 nAdc Emitter Cutoff Current (VEB= 10 Vdc, IC = 0) IEBO − − 50 nAdc 2N6426 2N6427 20,000 10,000 − − 200,000 100,000 (IC = 100 mAdc, VCE = 5.0 Vdc) 2N6426 2N6427 30,000 20,000 − − 300,000 200,000 (IC = 500 mAdc, VCE = 5.0 Vdc) 2N6426 2N6427 20,000 14,000 − − 200,000 140,000 − − 0.71 0.9 1.2 1.5 OFF CHARACTERISTICS ON CHARACTERISTICS DC Current Gain, (Note 1) (IC = 10 mAdc, VCE = 5.0 Vdc) hFE − Collector −Emitter Saturation Voltage (IC = 50 mAdc, IB = 0.5 mAdc) (IC = 500 mAdc, IB = 0.5 mAdc VCE(sat) Vdc Base −Emitter Saturation Voltage (IC = 500 mAdc, IB = 0.5 mAdc) VBE(sat) − 1.52 2.0 Vdc Base −Emitter On Voltage (IC = 50 mAdc, VCE = 5.0 Vdc) VBE(on) − 1.24 1.75 Vdc Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo − 5.4 7.0 pF Input Capacitance (VEB = 1.0 Vdc, IC = 0, f = 1.0 MHz) Cibo − 10 15 pF 100 50 − − 2000 1000 20,000 10,000 − − − − 1.5 1.3 2.4 2.4 − − SMALL−SIGNAL CHARACTERISTICS Input Impedance (IC = 10 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) hie 2N6426 2N6427 Small−Signal Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) kW hfe 2N6426 2N6427 Current −Gain − High Frequency (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) − |hfe| 2N6426 2N6427 − Output Admittance (IC = 10 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) hoe − − 1000 mmhos Noise Figure (IC = 1.0 mAdc, VCE = 5.0 Vdc, RS = 100 kW, f = 1.0 kHz) NF − 3.0 10 dB 1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. http://onsemi.com 2 2N6426, 2N6427 RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25°C) 2.0 BANDWIDTH = 1.0 Hz RS ≈ 0 200 BANDWIDTH = 1.0 Hz i n, NOISE CURRENT (pA) en, NOISE VOLTAGE (nV) 500 100 10 mA 50 100 mA 20 IC = 1.0 mA 10 1.0 0.7 0.5 IC = 1.0 mA 0.3 0.2 100 mA 0.1 0.07 0.05 10 mA 0.03 0.02 10 20 5.0 10 20 50 100 200 500 1k 2k 5k 10k 20k f, FREQUENCY (Hz) 50k 100k 50 100 200 50k 100k Figure 3. Noise Current 14 200 BANDWIDTH = 10 Hz TO 15.7 kHz 12 BANDWIDTH = 10 Hz TO 15.7 kHz 100 NF, NOISE FIGURE (dB) VT, TOTAL WIDEBAND NOISE VOLTAGE (nV) Figure 2. Noise Voltage 500 1k 2k 5k 10k 20k f, FREQUENCY (Hz) IC = 10 mA 70 50 100 mA 30 20 1.0 mA 10 1.0 2.0 10 10 mA 8.0 100 mA 6.0 4.0 IC = 1.0 mA 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (kW) 500 1000 0 1.0 Figure 4. Total Wideband Noise Voltage 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (kW) Figure 5. Wideband Noise Figure http://onsemi.com 3 500 1000 2N6426, 2N6427 SMALL−SIGNALCHARACTERISTICS 4.0 |h fe |, SMALL−SIGNAL CURRENT GAIN C, CAPACITANCE (pF) 20 TJ = 25°C 10 7.0 Cibo Cobo 5.0 3.0 2.0 0.04 0.1 0.2 0.4 1.0 2.0 4.0 VR, REVERSE VOLTAGE (VOLTS) 10 20 2.0 1.0 0.8 0.6 0.4 0.2 0.5 40 200k hFE, DC CURRENT GAIN TJ = 125°C 25°C 30k 20k 10k 7.0k 5.0k −55 °C VCE = 5.0 V 3.0k 2.0k 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 RθV, TEMPERATURE COEFFICIENTS (mV/°C) TJ = 25°C V, VOLTAGE (VOLTS) 1.4 VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0 VCE(sat) @ IC/IB = 1000 5.0 7.0 10 0.5 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500 TJ = 25°C 2.5 IC = 10 mA 50 mA 250 mA 500 mA 2.0 1.5 1.0 0.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 IB, BASE CURRENT (mA) 100 200 500 1000 Figure 9. Collector Saturation Region 1.6 0.6 2.0 3.0 Figure 8. DC Current Gain 0.8 1.0 Figure 7. High Frequency Current Gain VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 6. Capacitance 100k 70k 50k VCE = 5.0 V f = 100 MHz TJ = 25°C 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 −1.0 −2.0 *APPLIES FOR IC/IB ≤ hFE/3.0 25°C TO 125°C *RqVC FOR VCE(sat) −55 °C TO 25°C −3.0 25°C TO 125°C −4.0 qVB FOR VBE −5.0 −55 °C TO 25°C −6.0 5.0 7.0 10 Figure 10. “On” Voltages 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) Figure 11. Temperature Coefficients http://onsemi.com 4 500 RESISTANCE (NORMALIZED) 2N6426, 2N6427 1.0 0.7 0.5 D = 0.5 0.2 0.3 0.2 0.1 SINGLE PULSE 0.05 0.1 0.07 0.05 SINGLE PULSE ZqJC(t) = r(t) • RqJCTJ(pk) − TC = P(pk) ZqJC(t) ZqJA(t) = r(t) • RqJATJ(pk) − TA = P(pk) ZqJA(t) 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 1.0k 2.0k 5.0k 10k Figure 12. Thermal Response IC, COLLECTOR CURRENT (mA) 1.0k 700 500 300 200 FIGURE A 1.0 ms tP TC = 25°C TA = 25°C 100 ms PP 1.0 s 100 70 50 PP t1 30 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 20 10 0.4 0.6 1/f 40 1.0 2.0 4.0 6.0 10 20 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 13. Active Region Safe Operating Area t DUTYCYCLE + t1f + 1 tP PEAK PULSE POWER = PP Design Note: Use of Transient Thermal Resistance Data ORDERING INFORMATION Package Shipping† 2N6426G TO−92 (Pb−Free) 5,000 Units / Bulk 2N6426RLRAG TO−92 (Pb−Free) 2,000 / Tape & Ammo 2N6427G TO−92 (Pb−Free) 5,000 Units / Bulk 2N6427RLRAG TO−92 (Pb−Free) 2,000 / Tape & Ammo Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 2N6426, 2N6427 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AM A B STRAIGHT LEAD BULK PACK R P L SEATING PLANE K D X X G J H V C SECTION X−X 1 N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− N A R BENT LEAD TAPE & REEL AMMO PACK B P NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. T SEATING PLANE K D X X G J V 1 C SECTION X−X DIM A B C D G J K N P R V MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 −−− 2.04 2.66 1.50 4.00 2.93 −−− 3.43 −−− N STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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