Darlington Transistors NPN

2N6426, 2N6427
2N6426 is a Preferred Device
Darlington Transistors
NPN Silicon
Features
• These are Pb−Free Devices*
http://onsemi.com
COLLECTOR 3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector − Emitter Voltage
VCEO
40
Vdc
Collector − Base Voltage
VCBO
40
Vdc
Emitter − Base Voltage
VEBO
12
Vdc
Collector Current − Continuous
IC
500
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
W
mW/°C
TJ, Tstg
−55 to +150
°C
Operating and Storage Junction
Temperature Range
BASE
2
EMITTER 1
TO−92
CASE 29
STYLE 1
1
12
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
200
°C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
3
STRAIGHT LEAD
BULK PACK
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
2N
642x
AYWW G
G
x
= 6 or 7
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 3
1
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
2N6426/D
2N6426, 2N6427
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector −Emitter Breakdown Voltage, (Note 1)
(IC = 10 mAdc, VBE = 0)
V(BR)CEO
40
−
−
Vdc
Collector −Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
40
−
−
Vdc
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
12
−
−
Vdc
Collector Cutoff Current
(VCE = 25 Vdc, IB = 0)
ICES
−
−
1.0
mAdc
Collector Cutoff Current
(VCB= 30 Vdc, IE = 0)
ICBO
−
−
50
nAdc
Emitter Cutoff Current
(VEB= 10 Vdc, IC = 0)
IEBO
−
−
50
nAdc
2N6426
2N6427
20,000
10,000
−
−
200,000
100,000
(IC = 100 mAdc, VCE = 5.0 Vdc)
2N6426
2N6427
30,000
20,000
−
−
300,000
200,000
(IC = 500 mAdc, VCE = 5.0 Vdc)
2N6426
2N6427
20,000
14,000
−
−
200,000
140,000
−
−
0.71
0.9
1.2
1.5
OFF CHARACTERISTICS
ON CHARACTERISTICS
DC Current Gain, (Note 1)
(IC = 10 mAdc, VCE = 5.0 Vdc)
hFE
−
Collector −Emitter Saturation Voltage
(IC = 50 mAdc, IB = 0.5 mAdc)
(IC = 500 mAdc, IB = 0.5 mAdc
VCE(sat)
Vdc
Base −Emitter Saturation Voltage
(IC = 500 mAdc, IB = 0.5 mAdc)
VBE(sat)
−
1.52
2.0
Vdc
Base −Emitter On Voltage
(IC = 50 mAdc, VCE = 5.0 Vdc)
VBE(on)
−
1.24
1.75
Vdc
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
−
5.4
7.0
pF
Input Capacitance
(VEB = 1.0 Vdc, IC = 0, f = 1.0 MHz)
Cibo
−
10
15
pF
100
50
−
−
2000
1000
20,000
10,000
−
−
−
−
1.5
1.3
2.4
2.4
−
−
SMALL−SIGNAL CHARACTERISTICS
Input Impedance
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
hie
2N6426
2N6427
Small−Signal Current Gain
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
kW
hfe
2N6426
2N6427
Current −Gain − High Frequency
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
−
|hfe|
2N6426
2N6427
−
Output Admittance
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
hoe
−
−
1000
mmhos
Noise Figure
(IC = 1.0 mAdc, VCE = 5.0 Vdc, RS = 100 kW, f = 1.0 kHz)
NF
−
3.0
10
dB
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
http://onsemi.com
2
2N6426, 2N6427
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
2.0
BANDWIDTH = 1.0 Hz
RS ≈ 0
200
BANDWIDTH = 1.0 Hz
i n, NOISE CURRENT (pA)
en, NOISE VOLTAGE (nV)
500
100
10 mA
50
100 mA
20
IC = 1.0 mA
10
1.0
0.7
0.5
IC = 1.0 mA
0.3
0.2
100 mA
0.1
0.07
0.05
10 mA
0.03
0.02
10 20
5.0
10 20
50 100 200
500 1k 2k 5k 10k 20k
f, FREQUENCY (Hz)
50k 100k
50 100 200
50k 100k
Figure 3. Noise Current
14
200
BANDWIDTH = 10 Hz TO 15.7 kHz
12
BANDWIDTH = 10 Hz TO 15.7 kHz
100
NF, NOISE FIGURE (dB)
VT, TOTAL WIDEBAND NOISE VOLTAGE (nV)
Figure 2. Noise Voltage
500 1k 2k 5k 10k 20k
f, FREQUENCY (Hz)
IC = 10 mA
70
50
100 mA
30
20
1.0 mA
10
1.0
2.0
10
10 mA
8.0
100 mA
6.0
4.0
IC = 1.0 mA
2.0
5.0
10
20
50 100 200
RS, SOURCE RESISTANCE (kW)
500
1000
0
1.0
Figure 4. Total Wideband Noise Voltage
2.0
5.0
10
20
50 100 200
RS, SOURCE RESISTANCE (kW)
Figure 5. Wideband Noise Figure
http://onsemi.com
3
500
1000
2N6426, 2N6427
SMALL−SIGNALCHARACTERISTICS
4.0
|h fe |, SMALL−SIGNAL CURRENT GAIN
C, CAPACITANCE (pF)
20
TJ = 25°C
10
7.0
Cibo
Cobo
5.0
3.0
2.0
0.04
0.1
0.2
0.4
1.0 2.0 4.0
VR, REVERSE VOLTAGE (VOLTS)
10
20
2.0
1.0
0.8
0.6
0.4
0.2
0.5
40
200k
hFE, DC CURRENT GAIN
TJ = 125°C
25°C
30k
20k
10k
7.0k
5.0k
−55 °C
VCE = 5.0 V
3.0k
2.0k
5.0 7.0
10
20 30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
500
RθV, TEMPERATURE COEFFICIENTS (mV/°C)
TJ = 25°C
V, VOLTAGE (VOLTS)
1.4
VBE(sat) @ IC/IB = 1000
1.2
VBE(on) @ VCE = 5.0 V
1.0
VCE(sat) @ IC/IB = 1000
5.0 7.0
10
0.5 10 20
50
100 200
IC, COLLECTOR CURRENT (mA)
500
TJ = 25°C
2.5
IC = 10 mA
50 mA
250 mA
500 mA
2.0
1.5
1.0
0.5
0.1 0.2
0.5 1.0 2.0 5.0 10 20 50
IB, BASE CURRENT (mA)
100 200
500 1000
Figure 9. Collector Saturation Region
1.6
0.6
2.0
3.0
Figure 8. DC Current Gain
0.8
1.0
Figure 7. High Frequency Current Gain
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 6. Capacitance
100k
70k
50k
VCE = 5.0 V
f = 100 MHz
TJ = 25°C
20 30
50 70 100 200 300
IC, COLLECTOR CURRENT (mA)
500
−1.0
−2.0
*APPLIES FOR IC/IB ≤ hFE/3.0
25°C TO 125°C
*RqVC FOR VCE(sat)
−55 °C TO 25°C
−3.0
25°C TO 125°C
−4.0
qVB FOR VBE
−5.0
−55 °C TO 25°C
−6.0
5.0 7.0 10
Figure 10. “On” Voltages
20 30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
Figure 11. Temperature Coefficients
http://onsemi.com
4
500
RESISTANCE (NORMALIZED)
2N6426, 2N6427
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
SINGLE PULSE
0.05
0.1
0.07
0.05
SINGLE PULSE
ZqJC(t) = r(t) • RqJCTJ(pk) − TC = P(pk) ZqJC(t)
ZqJA(t) = r(t) • RqJATJ(pk) − TA = P(pk) ZqJA(t)
0.03
0.02
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
t, TIME (ms)
100
200
500
1.0k
2.0k
5.0k
10k
Figure 12. Thermal Response
IC, COLLECTOR CURRENT (mA)
1.0k
700
500
300
200
FIGURE A
1.0 ms
tP
TC = 25°C
TA = 25°C
100 ms
PP
1.0 s
100
70
50
PP
t1
30
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
20
10
0.4 0.6
1/f
40
1.0
2.0
4.0 6.0
10
20
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 13. Active Region Safe Operating Area
t
DUTYCYCLE + t1f + 1
tP
PEAK PULSE POWER = PP
Design Note: Use of Transient
Thermal Resistance Data
ORDERING INFORMATION
Package
Shipping†
2N6426G
TO−92
(Pb−Free)
5,000 Units / Bulk
2N6426RLRAG
TO−92
(Pb−Free)
2,000 / Tape & Ammo
2N6427G
TO−92
(Pb−Free)
5,000 Units / Bulk
2N6427RLRAG
TO−92
(Pb−Free)
2,000 / Tape & Ammo
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
5
2N6426, 2N6427
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
A
B
STRAIGHT LEAD
BULK PACK
R
P
L
SEATING
PLANE
K
D
X X
G
J
H
V
C
SECTION X−X
1
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
−−−
0.250
−−−
0.080
0.105
−−−
0.100
0.115
−−−
0.135
−−−
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
2.93
−−−
3.43
−−−
N
A
R
BENT LEAD
TAPE & REEL
AMMO PACK
B
P
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
T
SEATING
PLANE
K
D
X X
G
J
V
1
C
SECTION X−X
DIM
A
B
C
D
G
J
K
N
P
R
V
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.40
0.54
2.40
2.80
0.39
0.50
12.70
−−−
2.04
2.66
1.50
4.00
2.93
−−−
3.43
−−−
N
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
http://onsemi.com
6
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
2N6426/D
Similar pages