Darlington Transistors NPN

MPSA13, MPSA14
MPSA14 is a Preferred Device
Darlington Transistors
NPN Silicon
Features
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• Pb−Free Packages are Available*
COLLECTOR 3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCES
30
Vdc
Collector −Base Voltage
VCBO
30
Vdc
Emitter −Base Voltage
VEBO
10
Vdc
Collector Current − Continuous
IC
500
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
W
mW/°C
TJ, Tstg
−55 to +150
°C
Operating and Storage Junction
Temperature Range
EMITTER 1
TO−92
CASE 29
STYLE 1
1
12
THERMAL CHARACTERISTICS
Characteristic
BASE
2
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
200
°C/mW
Thermal Resistance, Junction−to−Case
RqJC
83.3
°C/mW
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
3
STRAIGHT LEAD
BULK PACK
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
MPS
A1x
AYWW G
G
x
= 3 or 4
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
April, 2007 − Rev. 4
1
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MPSA13/D
MPSA13, MPSA14
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
V(BR)CES
30
−
Vdc
Collector Cutoff Current
(VCB= 30 Vdc, IE = 0)
ICBO
−
100
nAdc
Emitter Cutoff Current
(VEB= 10 Vdc, IC = 0)
IEBO
−
100
nAdc
5,000
10,000
10,000
20,000
−
−
−
−
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 100 mAdc, IB = 0)
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 10 mAdc, VCE = 5.0 Vdc)
hFE
MPSA13
MPSA14
MPSA13
MPSA14
(IC = 100 mAdc, VCE = 5.0 Vdc)
−
Collector −Emitter Saturation Voltage
(IC = 100 mAdc, IB = 0.1 mAdc)
VCE(sat)
−
1.5
Vdc
Base −Emitter On Voltage
(IC = 100 mAdc, VCE = 5.0 Vdc)
VBE(on)
−
2.0
Vdc
125
−
SMALL−SIGNAL CHARACTERISTICS
fT
Current−Gain − Bandwidth Product (Note 2)
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
MHz
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
2. fT = |hfe| S ftest.
ORDERING INFORMATION
Package
Shipping†
TO−92
5000 Units / Bulk
TO−92
(Pb−Free)
5000 Units / Bulk
TO−92
2000 / Tape & Reel
MPSA13RLRAG
TO−92
(Pb−Free)
2000 / Tape & Reel
MPSA13RLRMG
TO−92
(Pb−Free)
2000 / Ammo Pack
MPSA13RLRPG
TO−92
(Pb−Free)
2000 / Ammo Pack
MPSA13ZL1G
TO−92
(Pb−Free)
2000 / Ammo Pack
MPSA14G
TO−92
(Pb−Free)
5000 Units / Bulk
MPSA14RLRAG
TO−92
(Pb−Free)
2000 / Tape & Reel
MPSA14RLRPG
TO−92
(Pb−Free)
2000 / Ammo Pack
Device
MPSA13
MPSA13G
MPSA13RLRA
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
MPSA13, MPSA14
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
2.0
BANDWIDTH = 1.0 Hz
RS ≈ 0
200
BANDWIDTH = 1.0 Hz
i n, NOISE CURRENT (pA)
en, NOISE VOLTAGE (nV)
500
100
10 mA
50
100 mA
20
IC = 1.0 mA
10
1.0
0.7
0.5
IC = 1.0 mA
0.3
0.2
100 mA
0.1
0.07
0.05
10 mA
0.03
5.0
10 20
50 100 200
500 1k 2k 5k 10k 20k
f, FREQUENCY (Hz)
50k 100k
0.02
10 20
50 100 200
50k 100k
Figure 3. Noise Current
14
200
BANDWIDTH = 10 Hz TO 15.7 kHz
12
BANDWIDTH = 10 Hz TO 15.7 kHz
100
NF, NOISE FIGURE (dB)
VT, TOTAL WIDEBAND NOISE VOLTAGE (nV)
Figure 2. Noise Voltage
500 1k 2k 5k 10k 20k
f, FREQUENCY (Hz)
IC = 10 mA
70
50
100 mA
30
20
1.0 mA
10
1.0
2.0
10
10 mA
8.0
100 mA
6.0
4.0
IC = 1.0 mA
2.0
5.0
10
20
50 100 200
RS, SOURCE RESISTANCE (kW)
500
1000
0
1.0
Figure 4. Total Wideband Noise Voltage
2.0
5.0
10
20
50 100 200
RS, SOURCE RESISTANCE (kW)
Figure 5. Wideband Noise Figure
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3
500
1000
MPSA13, MPSA14
SMALL−SIGNAL CHARACTERISTICS
4.0
|h fe |, SMALL−SIGNAL CURRENT GAIN
C, CAPACITANCE (pF)
20
TJ = 25°C
10
7.0
Cibo
Cobo
5.0
3.0
2.0
0.04
0.1
0.2
0.4
1.0 2.0 4.0
VR, REVERSE VOLTAGE (VOLTS)
10
20
VCE = 5.0 V
f = 100 MHz
TJ = 25°C
2.0
1.0
0.8
0.6
0.4
0.2
0.5
40
1.0
200k
hFE, DC CURRENT GAIN
TJ = 125°C
100k
70k
50k
25°C
30k
20k
10k
7.0k
5.0k
−55 °C
VCE = 5.0 V
3.0k
2.0k
5.0 7.0
10
20 30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
500
TJ = 25°C
2.5
IC = 10 mA
RθV, TEMPERATURE COEFFICIENTS (mV/°C)
TJ = 25°C
V, VOLTAGE (VOLTS)
1.4
VBE(sat) @ IC/IB = 1000
1.2
VBE(on) @ VCE = 5.0 V
1.0
VCE(sat) @ IC/IB = 1000
5.0 7.0
10
50 mA
250 mA
500 mA
2.0
1.5
1.0
0.5
0.1 0.2
0.5 1.0 2.0 5.0 10 20 50
IB, BASE CURRENT (mA)
100 200
500 1000
Figure 9. Collector Saturation Region
1.6
0.6
500
3.0
Figure 8. DC Current Gain
0.8
0.5 10 20
50
100 200
IC, COLLECTOR CURRENT (mA)
Figure 7. High Frequency Current Gain
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 6. Capacitance
2.0
20 30
50 70 100 200 300
IC, COLLECTOR CURRENT (mA)
500
−1.0
−2.0
*APPLIES FOR IC/IB ≤ hFE/3.0
25°C TO 125°C
*RqVC FOR VCE(sat)
−55 °C TO 25°C
−3.0
25°C TO 125°C
−4.0
qVB FOR VBE
−5.0
−55 °C TO 25°C
−6.0
5.0 7.0 10
Figure 10. “On” Voltages
20 30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
Figure 11. Temperature Coefficients
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4
500
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
0.05
SINGLE PULSE
0.1
0.07
0.05
SINGLE PULSE
ZqJC(t) = r(t) • RqJCTJ(pk) − TC = P(pk) ZqJC(t)
ZqJA(t) = r(t) • RqJATJ(pk) − TA = P(pk) ZqJA(t)
0.03
0.02
0.01
0.1
0.2
0.5
1.0
2.0
10
5.0
20
50
t, TIME (ms)
100
200
500
Figure 12. Thermal Response
1.0k
700
500
IC, COLLECTOR CURRENT (mA)
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
MPSA13, MPSA14
300
200
1.0 ms
TC = 25°C
TA = 25°C
100 ms
1.0 s
100
70
50
30
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
20
10
0.4 0.6
1.0
2.0
4.0 6.0
10
20
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
40
Figure 13. Active Region Safe Operating Area
FIGURE A
tP
PP
PP
t1
1/f
t
DUTYCYCLE + t1f + 1
tP
PEAK PULSE POWER = PP
Design Note: Use of Transient Thermal Resistance Data
http://onsemi.com
5
1.0k
2.0k
5.0k 10k
MPSA13, MPSA14
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
A
B
STRAIGHT LEAD
BULK PACK
R
P
L
SEATING
PLANE
K
D
X X
G
J
H
V
C
SECTION X−X
1
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
−−−
0.250
−−−
0.080
0.105
−−−
0.100
0.115
−−−
0.135
−−−
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
2.93
−−−
3.43
−−−
N
A
R
BENT LEAD
TAPE & REEL
AMMO PACK
B
P
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
T
SEATING
PLANE
K
D
X X
G
J
V
1
C
SECTION X−X
DIM
A
B
C
D
G
J
K
N
P
R
V
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.40
0.54
2.40
2.80
0.39
0.50
12.70
−−−
2.04
2.66
1.50
4.00
2.93
−−−
3.43
−−−
N
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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MPSA13/D
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