MPSW45, MPSW45A One Watt Darlington Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 BASE 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage MPSW45 MPSW45A VCES 40 50 Vdc Collector −Base Voltage MPSW45 MPSW45A VCBO 50 60 Vdc VEBO 12 Vdc Collector Current − Continuous IC 1.0 Adc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 1.0 8.0 W mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 2.5 20 W mW/°C TJ, Tstg −55 to +150 °C Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 125 °C/W Thermal Resistance, Junction−to−Case RqJC 50 °C/W Emitter −Base Voltage Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. EMITTER 1 12 1 3 STRAIGHT LEAD BULK PACK 2 3 BENT LEAD TAPE & REEL AMMO PACK TO−92 1 WATT (TO−226) CASE 29−10 STYLE 1 MARKING DIAGRAM MPS W45x AYWW G G MPSW45x = Device Code x = 45A Devices A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2010 August, 2010 − Rev. 4 1 Publication Order Number: MPSW45/D MPSW45, MPSW45A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max 40 50 − − 50 60 − − 12 − − − 100 100 − 100 25,000 15,000 4,000 150,000 − − Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) MPSW45 MPSW45A Collector −Base Breakdown Voltage (IC = 100 mAdc, IE = 0) MPSW45 MPSW45A Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)CES V(BR)CBO V(BR)EBO Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 40 Vdc, IE = 0) MPSW45 MPSW45A Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) ICBO IEBO Vdc Vdc Vdc nAdc nAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 200 mAdc, VCE = 5.0 Vdc) (IC = 500 mAdc, VCE = 5.0 Vdc) (IC = 1.0 Adc, VCE = 5.0 Vdc) hFE − Collector −Emitter Saturation Voltage (IC = 1.0 Adc, IB = 2.0 mAdc) VCE(sat) − 1.5 Vdc Base−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 2.0 mAdc) VBE(sat) − 2.0 Vdc Base −Emitter On Voltage (IC = 1.0 Adc, VCE = 5.0 Vdc) VBE(on) − 2.0 Vdc fT 100 − MHz Ccb − 6.0 pF SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 200 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Collector−Base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model http://onsemi.com 2 MPSW45, MPSW45A NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25°C) 500 2.0 BANDWIDTH = 1.0 Hz RS ≈ 0 i n, NOISE CURRENT (pA) en, NOISE VOLTAGE (nV) 200 BANDWIDTH = 1.0 Hz 100 10 mA 50 100 mA 20 IC = 1.0 mA 10 1.0 0.7 0.5 IC = 1.0 mA 0.3 0.2 100 mA 0.1 0.07 0.05 10 mA 0.03 0.02 10 20 5.0 10 20 50 100 200 500 1k 2k 5k 10k 20k f, FREQUENCY (Hz) 50k 100k 50 100 200 Figure 3. Noise Current 14 200 BANDWIDTH = 10 Hz TO 15.7 kHz 12 BANDWIDTH = 10 Hz TO 15.7 kHz 100 NF, NOISE FIGURE (dB) VT, TOTAL WIDEBAND NOISE VOLTAGE (nV) Figure 2. Noise Voltage 500 1k 2k 5k 10k 20k 50k 100k f, FREQUENCY (Hz) IC = 10 mA 70 50 100 mA 30 20 1.0 mA 10 1.0 2.0 10 10 mA 8.0 100 mA 6.0 4.0 IC = 1.0 mA 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (kΩ) 500 1000 0 1.0 Figure 4. Total Wideband Noise Voltage 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (kΩ) Figure 5. Wideband Noise Figure http://onsemi.com 3 500 1000 MPSW45, MPSW45A SMALL−SIGNAL CHARACTERISTICS 20 |h fe |, SMALL-SIGNAL CURRENT GAIN 4.0 TJ = 25°C C, CAPACITANCE (pF) 10 7.0 Cibo Cobo 5.0 3.0 2.0 0.04 0.1 0.2 0.4 1.0 2.0 4.0 VR, REVERSE VOLTAGE (VOLTS) 10 20 VCE = 5.0 V f = 100 MHz TJ = 25°C 2.0 1.0 0.8 0.6 0.4 0.2 0.5 40 1.0 200k hFE, DC CURRENT GAIN TJ = 125°C 100k 70k 50k 25°C 30k 20k 10k 7.0k 5.0k -55°C VCE = 5.0 V 3.0k 2.0k 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 TJ = 25°C 2.5 IC = 10 mA RθV, TEMPERATURE COEFFICIENTS (mV/°C) TJ = 25°C 1.4 V, VOLTAGE (VOLTS) 50 mA 250 mA 500 mA 2.0 1.5 1.0 0.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 IB, BASE CURRENT (mA) 100 200 500 1000 Figure 9. Collector Saturation Region 1.6 VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0 0.8 VCE(sat) @ IC/IB = 1000 0.6 10 500 3.0 Figure 8. DC Current Gain 5.0 7.0 0.5 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) Figure 7. High Frequency Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 6. Capacitance 2.0 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 -1.0 -2.0 *APPLIES FOR IC/IB ≤ hFE/3.0 25°C TO 125°C *RqVC FOR VCE(sat) -55°C TO 25°C -3.0 25°C TO 125°C -4.0 qVB FOR VBE -5.0 -55°C TO 25°C -6.0 5.0 7.0 10 Figure 10. “On” Voltages 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) Figure 11. Temperature Coefficients http://onsemi.com 4 500 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) MPSW45, MPSW45A 1.0 0.7 0.5 D = 0.5 0.2 0.3 0.2 0.05 0.1 SINGLE PULSE 0.1 0.07 0.05 SINGLE PULSE ZθJC(t) = r(t) • RθJCTJ(pk) - TC = P(pk) ZθJC(t) ZθJA(t) = r(t) • RθJATJ(pk) - TA = P(pk) ZθJA(t) 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 10 5.0 20 50 t, TIME (ms) 100 200 500 1.0k 2.0k 5.0k 10k Figure 12. Thermal Response IC, COLLECTOR CURRENT (mA) 1.0k 700 500 FIGURE A 1.0 ms tP 300 TC = 25°C TA = 25°C 200 100 ms PP 1.0 s 100 70 50 PP t1 30 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 20 10 0.4 0.6 1/f t DUTYCYCLE + t1f + 1 tP PEAK PULSE POWER = PP 40 1.0 2.0 4.0 6.0 10 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 13. Active Region Safe Operating Area Design Note: Use of Transient Thermal Resistance Data ORDERING INFORMATION Package Shipping† MPSW45G TO−92 (Pb−Free) 5,000 Units / Box MPSW45RLREG TO−92 (Pb−Free) 2,000 / Tape & Reel TO−92 5,000 Units / Box TO−92 (Pb−Free) 5,000 Units / Box TO−92 2,000 / Tape & Reel TO−92 (Pb−Free) 2,000 / Tape & Reel TO−92 2,000 / Ammo Pack TO−92 (Pb−Free) 2,000 / Ammo Pack Device MPSW45A MPSW45AG MPSW45ARLRA MPSW45ARLRAG MPSW45AZL1 MPSW45AZL1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 MPSW45, MPSW45A PACKAGE DIMENSIONS TO−92 (TO−226) 1 WATT CASE 29−10 ISSUE O A B R STRAIGHT LEAD BULK PACK P L F K D X X G J H V C SECTION X−X N 1 N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN DIMENSIONS P AND L. DIMENSIONS D AND J APPLY BETWEEN DI MENSIONS L AND K MINIMUM. THE LEAD DIMENSIONS ARE UNCONTROLLED IN DIMENSION P AND BEYOND DIMENSION K MINIMUM. DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 --0.250 --0.080 0.105 --0.100 0.135 --0.135 --- MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.46 0.53 0.41 0.48 1.15 1.39 2.42 2.66 0.46 0.61 12.70 --6.35 --2.04 2.66 --2.54 3.43 --3.43 --- STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR A BENT LEAD TAPE & REEL AMMO PACK R B P T SEATING PLANE G K D X X J V 1 C N SECTION X−X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN DIMENSIONS P AND L. DIMENSIONS D AND J APPLY BETWEEN DIMENSIONS L AND K MINIMUM. THE LEAD DIMENSIONS ARE UNCONTROLLED IN DIMENSION P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G J K N P R V INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.094 0.102 0.018 0.024 0.500 --0.080 0.105 --0.100 0.135 --0.135 --- MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.46 0.53 2.40 2.80 0.46 0.61 12.70 --2.04 2.66 --2.54 3.43 --3.43 --- ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 http://onsemi.com 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MPSW45/D