Complementary Bias Resistor Transistors R1 = 47 k , R2 = 22 k

NSBC144WPDP6
Complementary Bias
Resistor Transistors
R1 = 47 kW, R2 = 22 kW
NPN and PNP Transistors with Monolithic
Bias Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base-emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
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PIN CONNECTIONS
(3)
(2)
R1
Q2
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable
This Device is Pb-Free, Halogen Free/BFR Free and is RoHS
Compliant
R2
(4)
(5)
Rating
(6)
MARKING DIAGRAMS
SOT−963
CASE 527AD
MAXIMUM RATINGS
(TA = 25C both polarities Q1 (PNP) & Q2 (NPN), unless otherwise noted)
R1
T
M
G
T

R2
Q1
Features




(1)
1
MG
G
= Specific Device Code
= Date Code*
= Pb-Free Package
Symbol
Max
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
(Note: Microdot may be in either location)
IC
100
mAdc
*Date Code orientation may vary depending
upon manufacturing location.
Input Forward Voltage
VIN(fwd)
40
Vdc
Input Reverse Voltage
VIN(rev)
10
Vdc
Collector Current − Continuous
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device
NSBC144WPDP6T5G
Package
Shipping†
SOT−963
8,000/Tape & Reel
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
 Semiconductor Components Industries, LLC, 2012
September, 2012 − Rev. 0
1
Publication Order Number:
DTC144WP/D
NSBC144WPDP6
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
231
269
1.9
2.2
MW
NSBC144WPDP6 (SOT−963) ONE JUNCTION HEATED
Total Device Dissipation
TA = 25C
(Note 1)
(Note 2)
(Note 1)
(Note 2)
Derate above 25C
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
PD
RqJA
540
464
mW/C
C/W
NSBC144WPDP6 (SOT−963) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
TA = 25C
(Note 1)
(Note 2)
(Note 1)
(Note 2)
Derate above 25C
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
Junction and Storage Temperature Range
PD
RqJA
TJ, Tstg
1. FR−4 @ 100 mm2, 1 oz. copper traces, still air.
2. FR−4 @ 500 mm2, 1 oz. copper traces, still air.
3. Both junction heated values assume total power is sum of two equally powered channels.
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2
339
408
2.7
3.3
369
306
−55 to +150
MW
mW/C
C/W
C
NSBC144WPDP6
ELECTRICAL CHARACTERISTICS (TA = 25C both polarities Q1 (PNP) & Q2 (NPN), unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
−
−
100
−
−
500
−
−
0.13
50
−
−
50
−
−
80
140
−
−
−
0.25
−
−
1.7
1.7
−
−
−
−
2.6
2.7
−
−
−
−
0.2
4.9
−
−
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
Collector-Emitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
Collector-Base Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO
Collector-Emitter Breakdown Voltage (Note 4)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
nAdc
nAdc
mAdc
Vdc
Vdc
ON CHARACTERISTICS
hFE
DC Current Gain (Note 4)
(IC = 5.0 mA, VCE = 10 V)
Collector-Emitter Saturation Voltage (Note 4)
(IC = 10 mA, IB = 0.3 mA)
VCE(sat)
Input Voltage (Off)
(VCE = 5.0 V, IC = 100 mA) (NPN)
(VCE = 5.0 V, IC = 100 mA) (PNP)
Vi(off)
Input Voltage (On)
(VCE = 0.2 V, IC = 3.0 mA) (NPN)
(VCE = 0.2 V, IC = 3.0 mA) (PNP)
Vi(on)
Output Voltage (On)
(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW)
VOL
Output Voltage (Off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
VOH
Input Resistor
R1
32.9
47
61.1
Resistor Ratio
R1/R2
1.7
2.1
2.6
4. Pulsed Condition: Pulse Width = 300 ms, Duty Cycle  2%.
PD, POWER DISSIPATION (mW)
250
200
150
(1)
(1) SOT−963; 100 mm2, 1 oz. Copper Trace
100
50
0
−50
−25
0
25
50
75
100
125
150
AMBIENT TEMPERATURE (C)
Figure 1. Derating Curve
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3
V
Vdc
Vdc
Vdc
Vdc
kW
NSBC144WPDP6
1
1000
IC/IB = 10
0.1
VCE = 10 V
25C
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR−EMITTER VOLTAGE (V)
TYPICAL CHARACTERISTICS − NPN TRANSISTOR
NSBC144WPDP6
150C
−55C
0.01
0
10
20
30
40
100
−55C
10
1
0.1
50
1
10
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) vs. IC
100
2
IC, COLLECTOR CURRENT (mA)
f = 10 kHz
IE = 0 A
TA = 25C
1.6
1.2
0.8
0.4
0
10
20
30
40
50
10
−55C
25C
1
150C
0.1
0.01
VO = 5 V
0
4
8
12
16
20
24
VR, REVERSE VOLTAGE (V)
Vin, INPUT VOLTAGE (V)
Figure 4. Output Capacitance
Figure 5. Output Current vs. Input Voltage
100
Vin, INPUT VOLTAGE (V)
Cob, OUTPUT CAPACITANCE (pF)
100
Figure 3. DC Current Gain
2.4
0
150C
25C
25C
−55C
10
150C
1
VO = 0.2 V
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage vs. Output Current
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4
50
28
NSBC144WPDP6
10
1000
IC/IB = 10
VCE = 10 V
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR−EMITTER VOLTAGE (V)
TYPICAL CHARACTERISTICS − PNP TRANSISTOR
NSBC144WPDP6
1
150C
0.1
25C
0.01
−55C
0
10
20
30
40
100
−55C
10
1
0.1
50
1
10
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) vs. IC
100
6
5
IC, COLLECTOR CURRENT (mA)
f = 10 kHz
IE = 0 A
TA = 25C
4
3
2
1
0
10
20
30
40
50
−55C
10
1
25C
0.1
150C
0.01
0.001
VO = 5 V
0
VR, REVERSE VOLTAGE (V)
4
8
12
−55C
10
150C
1
VO = 0.2 V
0.1
0
20
24
Figure 10. Output Current vs. Input Voltage
100
25C
16
Vin, INPUT VOLTAGE (V)
Figure 9. Output Capacitance
Vin, INPUT VOLTAGE (V)
Cob, OUTPUT CAPACITANCE (pF)
100
Figure 8. DC Current Gain
7
0
150C
25C
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage vs. Output Current
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5
50
28
NSBC144WPDP6
PACKAGE DIMENSIONS
SOT−963
CASE 527AD
ISSUE E
D
X
Y
6
5
4
1
2
3
HE
E
e
6X
6X
BOTTOM VIEW
DIM
A
b
C
D
E
e
HE
L
L2
C
SIDE VIEW
TOP VIEW
6X L2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
A
L
MILLIMETERS
MIN
NOM
MAX
0.34
0.37
0.40
0.10
0.15
0.20
0.07
0.12
0.17
0.95
1.00
1.05
0.75
0.80
0.85
0.35 BSC
0.95
1.00
1.05
0.19 REF
0.05
0.10
0.15
b
0.08 X Y
RECOMMENDED
MOUNTING FOOTPRINT*
6X
6X
0.35
0.20
PACKAGE
OUTLINE
1.20
0.35
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
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DTC144WP/D
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